KR100403527B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR100403527B1
KR100403527B1 KR10-2001-0058832A KR20010058832A KR100403527B1 KR 100403527 B1 KR100403527 B1 KR 100403527B1 KR 20010058832 A KR20010058832 A KR 20010058832A KR 100403527 B1 KR100403527 B1 KR 100403527B1
Authority
KR
South Korea
Prior art keywords
film
fluorine
silicon oxide
oxide film
metal wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0058832A
Other languages
English (en)
Korean (ko)
Other versions
KR20020070074A (ko
Inventor
후지끼노리아끼
마쯔오까다께루
다께와까히로끼
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20020070074A publication Critical patent/KR20020070074A/ko
Application granted granted Critical
Publication of KR100403527B1 publication Critical patent/KR100403527B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10W20/01—
    • H10W20/47—
    • H10W20/48—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR10-2001-0058832A 2001-02-26 2001-09-22 반도체 장치 Expired - Fee Related KR100403527B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00051172 2001-02-26
JP2001051172A JP2002252280A (ja) 2001-02-26 2001-02-26 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR20020070074A KR20020070074A (ko) 2002-09-05
KR100403527B1 true KR100403527B1 (ko) 2003-10-30

Family

ID=18912012

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0058832A Expired - Fee Related KR100403527B1 (ko) 2001-02-26 2001-09-22 반도체 장치

Country Status (4)

Country Link
US (1) US6586838B2 (enExample)
JP (1) JP2002252280A (enExample)
KR (1) KR100403527B1 (enExample)
TW (1) TW516178B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060038293A1 (en) * 2004-08-23 2006-02-23 Rueger Neal R Inter-metal dielectric fill
JP5119606B2 (ja) * 2006-03-31 2013-01-16 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP2010206094A (ja) * 2009-03-05 2010-09-16 Elpida Memory Inc 半導体装置及びその製造方法
KR20150007000A (ko) 2013-07-10 2015-01-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419809A (en) * 1981-12-30 1983-12-13 International Business Machines Corporation Fabrication process of sub-micrometer channel length MOSFETs
JP2859288B2 (ja) * 1989-03-20 1999-02-17 株式会社日立製作所 半導体集積回路装置及びその製造方法
JPH0744218B2 (ja) * 1989-10-03 1995-05-15 三菱電機株式会社 半導体装置およびその製造方法
JP3231096B2 (ja) * 1991-10-15 2001-11-19 キヤノン株式会社 液体噴射記録ヘッド用基体、その製造方法および液体噴射記録ヘッドならびに液体噴射記録装置
JP2773530B2 (ja) * 1992-04-15 1998-07-09 日本電気株式会社 半導体装置の製造方法
US5753564A (en) * 1992-11-24 1998-05-19 Sumitomo Metal Industries, Ltd. Method for forming a thin film of a silicon oxide on a silicon substrate, by BCR plasma
JP3279737B2 (ja) 1993-07-09 2002-04-30 沖電気工業株式会社 半導体素子の製造方法
JP3199942B2 (ja) * 1993-12-28 2001-08-20 株式会社東芝 半導体装置の製造方法
JP3297787B2 (ja) * 1994-10-12 2002-07-02 ソニー株式会社 平坦化絶縁膜の形成方法
JP2917897B2 (ja) * 1996-03-29 1999-07-12 日本電気株式会社 半導体装置の製造方法
JP3323055B2 (ja) * 1996-04-03 2002-09-09 株式会社東芝 半導体装置およびその製造方法
JPH1098102A (ja) 1996-09-25 1998-04-14 Sony Corp 半導体装置及び半導体装置の製造方法
JPH10270554A (ja) 1997-03-24 1998-10-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH10335461A (ja) 1997-04-02 1998-12-18 Nec Corp 半導体装置及び半導体装置の製造方法
JP3660799B2 (ja) * 1997-09-08 2005-06-15 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3215382B2 (ja) 1998-02-17 2001-10-02 松下電器産業株式会社 半導体装置及びその製造方法
JP3459355B2 (ja) * 1998-03-27 2003-10-20 株式会社東芝 半導体装置およびその製造方法
JP3877109B2 (ja) * 1998-12-02 2007-02-07 富士通株式会社 半導体装置およびその製造方法
US6313003B1 (en) * 2000-08-17 2001-11-06 Taiwan Semiconductor Manufacturing Company Fabrication process for metal-insulator-metal capacitor with low gate resistance

Also Published As

Publication number Publication date
US20020117755A1 (en) 2002-08-29
KR20020070074A (ko) 2002-09-05
TW516178B (en) 2003-01-01
JP2002252280A (ja) 2002-09-06
US6586838B2 (en) 2003-07-01

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