TWI299542B - - Google Patents

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Publication number
TWI299542B
TWI299542B TW094141805A TW94141805A TWI299542B TW I299542 B TWI299542 B TW I299542B TW 094141805 A TW094141805 A TW 094141805A TW 94141805 A TW94141805 A TW 94141805A TW I299542 B TWI299542 B TW I299542B
Authority
TW
Taiwan
Prior art keywords
wiring
connection hole
semiconductor device
alloy layer
insulating film
Prior art date
Application number
TW094141805A
Other languages
English (en)
Chinese (zh)
Other versions
TW200631132A (en
Inventor
Shinichi Arakawa
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200631132A publication Critical patent/TW200631132A/zh
Application granted granted Critical
Publication of TWI299542B publication Critical patent/TWI299542B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/034—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics bottomless barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/036—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being within a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/041—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being discontinuous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/083—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being via holes penetrating underlying conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW094141805A 2004-12-10 2005-11-29 Semiconductor device and method for manufacturing the same TW200631132A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004358140A JP2006165454A (ja) 2004-12-10 2004-12-10 半導体装置の製造方法および半導体装置

Publications (2)

Publication Number Publication Date
TW200631132A TW200631132A (en) 2006-09-01
TWI299542B true TWI299542B (enExample) 2008-08-01

Family

ID=36582864

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141805A TW200631132A (en) 2004-12-10 2005-11-29 Semiconductor device and method for manufacturing the same

Country Status (4)

Country Link
US (2) US7416974B2 (enExample)
JP (1) JP2006165454A (enExample)
KR (1) KR20060065512A (enExample)
TW (1) TW200631132A (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US8298933B2 (en) 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US7432195B2 (en) * 2006-03-29 2008-10-07 Tokyo Electron Limited Method for integrating a conformal ruthenium layer into copper metallization of high aspect ratio features
US7855147B1 (en) * 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US7473634B2 (en) * 2006-09-28 2009-01-06 Tokyo Electron Limited Method for integrated substrate processing in copper metallization
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US7569475B2 (en) * 2006-11-15 2009-08-04 International Business Machines Corporation Interconnect structure having enhanced electromigration reliability and a method of fabricating same
KR100795363B1 (ko) * 2006-11-24 2008-01-17 삼성전자주식회사 반도체 소자의 도전성 배선 및 이의 형성방법과 이를구비하는 플래시 메모리 장치 및 이의 제조 방법
US20100059889A1 (en) * 2006-12-20 2010-03-11 Nxp, B.V. Adhesion of diffusion barrier on copper-containing interconnect element
KR100790452B1 (ko) * 2006-12-28 2008-01-03 주식회사 하이닉스반도체 다마신 공정을 이용한 반도체 소자의 다층 금속배선형성방법
JP5103914B2 (ja) * 2007-01-31 2012-12-19 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置
US7682966B1 (en) 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
DE102007035834A1 (de) * 2007-07-31 2009-02-05 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit lokal erhöhtem Elektromigrationswiderstand in einer Verbindungsstruktur
US7846834B2 (en) * 2008-02-04 2010-12-07 International Business Machines Corporation Interconnect structure and method for Cu/ultra low k integration
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
KR100997315B1 (ko) * 2008-07-15 2010-11-29 주식회사 동부하이텍 이미지 센서의 제조 방법
TWI394239B (zh) * 2008-12-17 2013-04-21 Univ Ishou The integrated circuit with the isolation layer of metal ion migration and its encapsulation structure
US8288276B2 (en) * 2008-12-30 2012-10-16 International Business Machines Corporation Method of forming an interconnect structure including a metallic interfacial layer located at a bottom via portion
US8299567B2 (en) * 2010-11-23 2012-10-30 International Business Machines Corporation Structure of metal e-fuse
US10153351B2 (en) * 2016-01-29 2018-12-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and a method for fabricating the same
DE102016125299B4 (de) 2016-01-29 2024-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und Verfahren zu ihrer Herstellung
KR102493464B1 (ko) 2018-07-19 2023-01-30 삼성전자 주식회사 집적회로 장치 및 이의 제조 방법
US10580696B1 (en) * 2018-08-21 2020-03-03 Globalfoundries Inc. Interconnects formed by a metal displacement reaction
US11502000B2 (en) * 2020-08-24 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom lateral expansion of contact plugs through implantation
TWI844803B (zh) 2021-10-28 2024-06-11 鴻海精密工業股份有限公司 光子晶體面射型雷射裝置及光學系統
CN117199155B (zh) * 2023-11-06 2024-02-13 杭州特洛伊光电技术有限公司 一种波导型可见光及近红外光探测器结构与制备方法

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Publication number Priority date Publication date Assignee Title
JPH0250432A (ja) 1988-08-12 1990-02-20 Toshiba Corp 半導体装置
JPH07297194A (ja) 1994-04-25 1995-11-10 Sony Corp マルチチャンバー装置及び半導体装置の製造方法
US6555465B2 (en) * 1997-12-05 2003-04-29 Yamaha Corp. Multi-layer wiring structure of integrated circuit and manufacture of multi-layer wiring
US6075291A (en) * 1998-02-27 2000-06-13 Micron Technology, Inc. Structure for contact formation using a silicon-germanium alloy
JP2001341977A (ja) 2000-06-01 2001-12-11 Ishikawajima Harima Heavy Ind Co Ltd ホイストクレーン
US7309658B2 (en) * 2004-11-22 2007-12-18 Intermolecular, Inc. Molecular self-assembly in substrate processing

Also Published As

Publication number Publication date
US20080265418A1 (en) 2008-10-30
KR20060065512A (ko) 2006-06-14
US20060125100A1 (en) 2006-06-15
US7416974B2 (en) 2008-08-26
JP2006165454A (ja) 2006-06-22
TW200631132A (en) 2006-09-01
US7851924B2 (en) 2010-12-14

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees