KR20060065512A - 반도체 장치의 제조 방법 및 반도체 장치 - Google Patents

반도체 장치의 제조 방법 및 반도체 장치 Download PDF

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Publication number
KR20060065512A
KR20060065512A KR1020050119236A KR20050119236A KR20060065512A KR 20060065512 A KR20060065512 A KR 20060065512A KR 1020050119236 A KR1020050119236 A KR 1020050119236A KR 20050119236 A KR20050119236 A KR 20050119236A KR 20060065512 A KR20060065512 A KR 20060065512A
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South Korea
Prior art keywords
wiring
connection hole
alloy layer
metal material
film
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Ceased
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KR1020050119236A
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English (en)
Korean (ko)
Inventor
신이찌 아라까와
Original Assignee
소니 가부시끼 가이샤
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Application filed by 소니 가부시끼 가이샤 filed Critical 소니 가부시끼 가이샤
Publication of KR20060065512A publication Critical patent/KR20060065512A/ko
Ceased legal-status Critical Current

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    • H10W20/064—
    • H10W20/01—
    • H10D64/011—
    • H10W20/034—
    • H10W20/036—
    • H10W20/037—
    • H10W20/041—
    • H10W20/0526—
    • H10W20/054—
    • H10W20/077—
    • H10W20/081—
    • H10W20/083—
    • H10W20/084—
    • H10W20/42—
    • H10W20/425—

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020050119236A 2004-12-10 2005-12-08 반도체 장치의 제조 방법 및 반도체 장치 Ceased KR20060065512A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004358140A JP2006165454A (ja) 2004-12-10 2004-12-10 半導体装置の製造方法および半導体装置
JPJP-P-2004-00358140 2004-12-10

Publications (1)

Publication Number Publication Date
KR20060065512A true KR20060065512A (ko) 2006-06-14

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ID=36582864

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050119236A Ceased KR20060065512A (ko) 2004-12-10 2005-12-08 반도체 장치의 제조 방법 및 반도체 장치

Country Status (4)

Country Link
US (2) US7416974B2 (enExample)
JP (1) JP2006165454A (enExample)
KR (1) KR20060065512A (enExample)
TW (1) TW200631132A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220025633A (ko) * 2020-08-24 2022-03-03 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 주입을 통한 콘택트 플러그의 저부 횡방향 확장
CN117199155A (zh) * 2023-11-06 2023-12-08 杭州特洛伊光电技术有限公司 一种波导型可见光及近红外光探测器结构与制备方法

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US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US8298933B2 (en) 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US7432195B2 (en) * 2006-03-29 2008-10-07 Tokyo Electron Limited Method for integrating a conformal ruthenium layer into copper metallization of high aspect ratio features
US7855147B1 (en) * 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US7473634B2 (en) * 2006-09-28 2009-01-06 Tokyo Electron Limited Method for integrated substrate processing in copper metallization
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US7569475B2 (en) * 2006-11-15 2009-08-04 International Business Machines Corporation Interconnect structure having enhanced electromigration reliability and a method of fabricating same
KR100795363B1 (ko) * 2006-11-24 2008-01-17 삼성전자주식회사 반도체 소자의 도전성 배선 및 이의 형성방법과 이를구비하는 플래시 메모리 장치 및 이의 제조 방법
WO2008074672A1 (en) * 2006-12-20 2008-06-26 Nxp B.V. Improving adhesion of diffusion barrier on cu containing interconnect element
KR100790452B1 (ko) * 2006-12-28 2008-01-03 주식회사 하이닉스반도체 다마신 공정을 이용한 반도체 소자의 다층 금속배선형성방법
JP5103914B2 (ja) * 2007-01-31 2012-12-19 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置
US7682966B1 (en) 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
DE102007035834A1 (de) * 2007-07-31 2009-02-05 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit lokal erhöhtem Elektromigrationswiderstand in einer Verbindungsstruktur
US7846834B2 (en) * 2008-02-04 2010-12-07 International Business Machines Corporation Interconnect structure and method for Cu/ultra low k integration
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
KR100997315B1 (ko) * 2008-07-15 2010-11-29 주식회사 동부하이텍 이미지 센서의 제조 방법
TWI394239B (zh) * 2008-12-17 2013-04-21 Univ Ishou The integrated circuit with the isolation layer of metal ion migration and its encapsulation structure
US8288276B2 (en) * 2008-12-30 2012-10-16 International Business Machines Corporation Method of forming an interconnect structure including a metallic interfacial layer located at a bottom via portion
US8299567B2 (en) * 2010-11-23 2012-10-30 International Business Machines Corporation Structure of metal e-fuse
DE102016125299B4 (de) 2016-01-29 2024-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und Verfahren zu ihrer Herstellung
US10153351B2 (en) * 2016-01-29 2018-12-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and a method for fabricating the same
KR102493464B1 (ko) 2018-07-19 2023-01-30 삼성전자 주식회사 집적회로 장치 및 이의 제조 방법
US10580696B1 (en) * 2018-08-21 2020-03-03 Globalfoundries Inc. Interconnects formed by a metal displacement reaction
TWI844803B (zh) 2021-10-28 2024-06-11 鴻海精密工業股份有限公司 光子晶體面射型雷射裝置及光學系統

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0250432A (ja) 1988-08-12 1990-02-20 Toshiba Corp 半導体装置
JPH07297194A (ja) 1994-04-25 1995-11-10 Sony Corp マルチチャンバー装置及び半導体装置の製造方法
US6555465B2 (en) * 1997-12-05 2003-04-29 Yamaha Corp. Multi-layer wiring structure of integrated circuit and manufacture of multi-layer wiring
US6075291A (en) * 1998-02-27 2000-06-13 Micron Technology, Inc. Structure for contact formation using a silicon-germanium alloy
JP2001341977A (ja) 2000-06-01 2001-12-11 Ishikawajima Harima Heavy Ind Co Ltd ホイストクレーン
WO2006058034A2 (en) * 2004-11-22 2006-06-01 Intermolecular, Inc. Molecular self-assembly in substrate processing

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220025633A (ko) * 2020-08-24 2022-03-03 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 주입을 통한 콘택트 플러그의 저부 횡방향 확장
US11502000B2 (en) 2020-08-24 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom lateral expansion of contact plugs through implantation
US12183632B2 (en) 2020-08-24 2024-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom lateral expansion of contact plugs through implantation
CN117199155A (zh) * 2023-11-06 2023-12-08 杭州特洛伊光电技术有限公司 一种波导型可见光及近红外光探测器结构与制备方法
CN117199155B (zh) * 2023-11-06 2024-02-13 杭州特洛伊光电技术有限公司 一种波导型可见光及近红外光探测器结构与制备方法

Also Published As

Publication number Publication date
US7416974B2 (en) 2008-08-26
US7851924B2 (en) 2010-12-14
TWI299542B (enExample) 2008-08-01
US20060125100A1 (en) 2006-06-15
JP2006165454A (ja) 2006-06-22
TW200631132A (en) 2006-09-01
US20080265418A1 (en) 2008-10-30

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