JP2002237539A5 - - Google Patents

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Publication number
JP2002237539A5
JP2002237539A5 JP2001296178A JP2001296178A JP2002237539A5 JP 2002237539 A5 JP2002237539 A5 JP 2002237539A5 JP 2001296178 A JP2001296178 A JP 2001296178A JP 2001296178 A JP2001296178 A JP 2001296178A JP 2002237539 A5 JP2002237539 A5 JP 2002237539A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001296178A
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Japanese (ja)
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JP2002237539A (ja
JP4744751B2 (ja
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Publication date
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Priority to JP2001296178A priority Critical patent/JP4744751B2/ja
Priority claimed from JP2001296178A external-priority patent/JP4744751B2/ja
Publication of JP2002237539A publication Critical patent/JP2002237539A/ja
Publication of JP2002237539A5 publication Critical patent/JP2002237539A5/ja
Application granted granted Critical
Publication of JP4744751B2 publication Critical patent/JP4744751B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001296178A 2000-12-06 2001-09-27 半導体装置 Expired - Lifetime JP4744751B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001296178A JP4744751B2 (ja) 2000-12-06 2001-09-27 半導体装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000371153 2000-12-06
JP2000-371153 2000-12-06
JP2000371153 2000-12-06
JP2001296178A JP4744751B2 (ja) 2000-12-06 2001-09-27 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011023539A Division JP5280469B2 (ja) 2000-12-06 2011-02-07 半導体記憶装置及び半導体装置

Publications (3)

Publication Number Publication Date
JP2002237539A JP2002237539A (ja) 2002-08-23
JP2002237539A5 true JP2002237539A5 (enExample) 2008-07-31
JP4744751B2 JP4744751B2 (ja) 2011-08-10

Family

ID=18840923

Family Applications (10)

Application Number Title Priority Date Filing Date
JP2001296178A Expired - Lifetime JP4744751B2 (ja) 2000-12-06 2001-09-27 半導体装置
JP2011023539A Expired - Lifetime JP5280469B2 (ja) 2000-12-06 2011-02-07 半導体記憶装置及び半導体装置
JP2013093581A Expired - Lifetime JP5654081B2 (ja) 2000-12-06 2013-04-26 半導体装置
JP2014112540A Expired - Lifetime JP5722491B2 (ja) 2000-12-06 2014-05-30 半導体装置
JP2015023272A Expired - Lifetime JP5993043B2 (ja) 2000-12-06 2015-02-09 半導体装置
JP2016145998A Expired - Lifetime JP6121604B2 (ja) 2000-12-06 2016-07-26 半導体装置
JP2017042935A Expired - Lifetime JP6188983B2 (ja) 2000-12-06 2017-03-07 半導体装置
JP2017137189A Expired - Lifetime JP6275905B2 (ja) 2000-12-06 2017-07-13 半導体記憶装置
JP2017224452A Expired - Lifetime JP6620388B2 (ja) 2000-12-06 2017-11-22 半導体記憶装置
JP2019007819A Expired - Lifetime JP6707157B2 (ja) 2000-12-06 2019-01-21 半導体記憶装置

Family Applications After (9)

Application Number Title Priority Date Filing Date
JP2011023539A Expired - Lifetime JP5280469B2 (ja) 2000-12-06 2011-02-07 半導体記憶装置及び半導体装置
JP2013093581A Expired - Lifetime JP5654081B2 (ja) 2000-12-06 2013-04-26 半導体装置
JP2014112540A Expired - Lifetime JP5722491B2 (ja) 2000-12-06 2014-05-30 半導体装置
JP2015023272A Expired - Lifetime JP5993043B2 (ja) 2000-12-06 2015-02-09 半導体装置
JP2016145998A Expired - Lifetime JP6121604B2 (ja) 2000-12-06 2016-07-26 半導体装置
JP2017042935A Expired - Lifetime JP6188983B2 (ja) 2000-12-06 2017-03-07 半導体装置
JP2017137189A Expired - Lifetime JP6275905B2 (ja) 2000-12-06 2017-07-13 半導体記憶装置
JP2017224452A Expired - Lifetime JP6620388B2 (ja) 2000-12-06 2017-11-22 半導体記憶装置
JP2019007819A Expired - Lifetime JP6707157B2 (ja) 2000-12-06 2019-01-21 半導体記憶装置

Country Status (6)

Country Link
US (7) US6529401B2 (enExample)
JP (10) JP4744751B2 (enExample)
KR (1) KR100478375B1 (enExample)
CN (1) CN1172374C (enExample)
DE (1) DE10159762A1 (enExample)
TW (1) TW522546B (enExample)

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* Cited by examiner, † Cited by third party
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TW522546B (en) 2000-12-06 2003-03-01 Mitsubishi Electric Corp Semiconductor memory
JP2002353413A (ja) * 2001-05-28 2002-12-06 Mitsubishi Electric Corp 半導体記憶装置
JP4877894B2 (ja) * 2001-07-04 2012-02-15 ルネサスエレクトロニクス株式会社 半導体装置
JP4278338B2 (ja) * 2002-04-01 2009-06-10 株式会社ルネサステクノロジ 半導体記憶装置
JP4416428B2 (ja) 2003-04-30 2010-02-17 株式会社ルネサステクノロジ 半導体記憶装置
US7023056B2 (en) * 2003-11-26 2006-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell structure
JP4058417B2 (ja) * 2004-01-09 2008-03-12 株式会社東芝 半導体装置およびその製造方法
US7365432B2 (en) * 2004-08-23 2008-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell structure
FR2875328B1 (fr) * 2004-09-15 2007-03-16 St Microelectronics Sa Cellule memoire sram protegee contre des pics de courant ou de tension
JP4578329B2 (ja) 2005-06-03 2010-11-10 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2009238332A (ja) * 2008-03-27 2009-10-15 Renesas Technology Corp 半導体記憶装置
JP2009266942A (ja) * 2008-04-23 2009-11-12 Toshiba Corp 半導体記憶装置
US8737107B2 (en) 2009-01-15 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuits and routing of conductive layers thereof
US8004042B2 (en) * 2009-03-20 2011-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Static random access memory (SRAM) cell and method for forming same
JP5596335B2 (ja) * 2009-12-24 2014-09-24 ルネサスエレクトロニクス株式会社 半導体装置
CN101819977A (zh) * 2010-04-29 2010-09-01 上海宏力半导体制造有限公司 一种静态随机存储器
US8947912B2 (en) 2010-07-20 2015-02-03 University Of Virginia Licensing & Ventures Group Memory cell including unidirectional gate conductors and contacts
JP5705053B2 (ja) 2011-07-26 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
KR20160040577A (ko) * 2013-08-06 2016-04-14 르네사스 일렉트로닉스 가부시키가이샤 반도체 집적 회로 장치
JP6316727B2 (ja) * 2014-10-22 2018-04-25 ルネサスエレクトロニクス株式会社 半導体装置
JP2016146504A (ja) * 2016-04-06 2016-08-12 ルネサスエレクトロニクス株式会社 半導体装置および半導体チップ
TWI711159B (zh) * 2017-03-28 2020-11-21 聯華電子股份有限公司 半導體記憶元件

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JPH0828430B2 (ja) * 1988-11-30 1996-03-21 日本電気株式会社 Ｃｍｏｓ型スタティックメモリ
US5126279A (en) * 1988-12-19 1992-06-30 Micron Technology, Inc. Single polysilicon cross-coupled resistor, six-transistor SRAM cell design technique
JP2927463B2 (ja) * 1989-09-28 1999-07-28 株式会社日立製作所 半導体記憶装置
JPH0821237B2 (ja) * 1990-06-27 1996-03-04 株式会社東芝 半導体記憶装置
JPH0799630B2 (ja) * 1990-09-11 1995-10-25 株式会社東芝 スタティック型半導体記憶装置
JP2589949Y2 (ja) 1990-11-02 1999-02-03 花王株式会社 使い捨ておむつ
JP3359354B2 (ja) * 1991-06-24 2002-12-24 テキサス インスツルメンツ インコーポレイテツド 向上されたダイナミック負フィードバッグを備えた電子ラッチ
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US5338963A (en) 1993-04-05 1994-08-16 International Business Machines Corporation Soft error immune CMOS static RAM cell
JPH07130877A (ja) 1993-11-05 1995-05-19 Sony Corp 完全ｃｍｏｓ型スタティック記憶セル
US5422296A (en) * 1994-04-25 1995-06-06 Motorola, Inc. Process for forming a static-random-access memory cell
JPH08125137A (ja) * 1994-10-28 1996-05-17 Nec Corp 半導体記憶装置
JPH08204029A (ja) * 1995-01-23 1996-08-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3565290B2 (ja) 1995-03-28 2004-09-15 川崎マイクロエレクトロニクス株式会社 マルチポートメモリ
JPH097373A (ja) * 1995-06-20 1997-01-10 Oki Electric Ind Co Ltd 半導体記憶装置
JPH09129753A (ja) * 1995-11-01 1997-05-16 Sony Corp 半導体装置
KR100197524B1 (ko) * 1995-12-30 1999-06-15 김영환 에스램 셀 제조방법
JP3824343B2 (ja) 1996-03-29 2006-09-20 富士通株式会社 半導体装置
US5742557A (en) * 1996-06-20 1998-04-21 Northern Telecom Limited Multi-port random access memory
JP3523762B2 (ja) 1996-12-19 2004-04-26 株式会社東芝 半導体記憶装置
KR19980050498A (ko) * 1996-12-20 1998-09-15 김광호 저전압용 sram 셀
US5923582A (en) * 1997-06-03 1999-07-13 Cypress Semiconductor Corp. SRAM with ROM functionality
US6140684A (en) * 1997-06-24 2000-10-31 Stmicroelectronic, Inc. SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers
US6271568B1 (en) * 1997-12-29 2001-08-07 Utmc Microelectronic Systems Inc. Voltage controlled resistance modulation for single event upset immunity
US6005797A (en) * 1998-03-20 1999-12-21 Micron Technology, Inc. Latch-up prevention for memory cells
WO1999063542A1 (en) * 1998-06-05 1999-12-09 Lockheed Martin Corporation Radiation hardened six transistor random access memory and memory device
JP2000150651A (ja) * 1998-11-04 2000-05-30 Nec Corp 半導体装置及びプラグ構造の製造方法
US5966317A (en) * 1999-02-10 1999-10-12 Lucent Technologies Inc. Shielded bitlines for static RAMs
JP2000232168A (ja) * 1999-02-10 2000-08-22 Sony Corp 半導体記憶装置
JP4674386B2 (ja) * 1999-02-17 2011-04-20 ソニー株式会社 半導体記憶装置
JP4565700B2 (ja) * 1999-05-12 2010-10-20 ルネサスエレクトロニクス株式会社 半導体装置
JP4885365B2 (ja) * 2000-05-16 2012-02-29 ルネサスエレクトロニクス株式会社 半導体装置
TW522546B (en) * 2000-12-06 2003-03-01 Mitsubishi Electric Corp Semiconductor memory
JP3526553B2 (ja) * 2001-01-26 2004-05-17 松下電器産業株式会社 Ｓｒａｍ装置

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