FR2875328B1 - Cellule memoire sram protegee contre des pics de courant ou de tension - Google Patents

Cellule memoire sram protegee contre des pics de courant ou de tension

Info

Publication number
FR2875328B1
FR2875328B1 FR0409781A FR0409781A FR2875328B1 FR 2875328 B1 FR2875328 B1 FR 2875328B1 FR 0409781 A FR0409781 A FR 0409781A FR 0409781 A FR0409781 A FR 0409781A FR 2875328 B1 FR2875328 B1 FR 2875328B1
Authority
FR
France
Prior art keywords
pics
voltage
memory cell
protected against
against current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0409781A
Other languages
English (en)
Other versions
FR2875328A1 (fr
Inventor
Philippe Roche
Francois Jacquet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0409781A priority Critical patent/FR2875328B1/fr
Priority to US11/225,876 priority patent/US7535743B2/en
Publication of FR2875328A1 publication Critical patent/FR2875328A1/fr
Application granted granted Critical
Publication of FR2875328B1 publication Critical patent/FR2875328B1/fr
Priority to US12/421,821 priority patent/US7872894B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G11C11/4125—Cells incorporating circuit means for protecting against loss of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
FR0409781A 2004-09-15 2004-09-15 Cellule memoire sram protegee contre des pics de courant ou de tension Expired - Fee Related FR2875328B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0409781A FR2875328B1 (fr) 2004-09-15 2004-09-15 Cellule memoire sram protegee contre des pics de courant ou de tension
US11/225,876 US7535743B2 (en) 2004-09-15 2005-09-12 SRAM memory cell protected against current or voltage spikes
US12/421,821 US7872894B2 (en) 2004-09-15 2009-04-10 SRAM memory cell protected against current or voltage spikes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0409781A FR2875328B1 (fr) 2004-09-15 2004-09-15 Cellule memoire sram protegee contre des pics de courant ou de tension

Publications (2)

Publication Number Publication Date
FR2875328A1 FR2875328A1 (fr) 2006-03-17
FR2875328B1 true FR2875328B1 (fr) 2007-03-16

Family

ID=34949643

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0409781A Expired - Fee Related FR2875328B1 (fr) 2004-09-15 2004-09-15 Cellule memoire sram protegee contre des pics de courant ou de tension

Country Status (2)

Country Link
US (2) US7535743B2 (fr)
FR (1) FR2875328B1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2875328B1 (fr) * 2004-09-15 2007-03-16 St Microelectronics Sa Cellule memoire sram protegee contre des pics de courant ou de tension
US8767444B2 (en) * 2006-03-27 2014-07-01 Honeywell International Inc. Radiation-hardened memory element with multiple delay elements
US7638822B1 (en) * 2007-01-03 2009-12-29 Xilinx, Inc. Memory cell with single-event-upset tolerance
US7515452B1 (en) 2007-01-03 2009-04-07 Xilinx, Inc. Interleaved memory cell with single-event-upset tolerance
US8773929B1 (en) 2008-03-11 2014-07-08 Xilinx, Inc. Single-event-upset resistant memory cell with triple well
US8014184B1 (en) 2009-09-14 2011-09-06 Xilinx, Inc. Radiation hardened memory cell
US8519483B1 (en) * 2011-05-19 2013-08-27 Xilinx, Inc. Semiconductor device having a high resistance to ionizing radiation
US9379109B1 (en) 2012-04-04 2016-06-28 Xilinx, Inc. Integrated circuit having improved radiation immunity
US9236353B2 (en) * 2012-11-27 2016-01-12 Xilinx, Inc. Integrated circuit having improved radiation immunity
CN109658962B (zh) * 2018-12-19 2021-06-29 哈尔滨工业大学 一种抗单粒子多节点翻转的近阈值sram存储单元

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5157625A (en) * 1990-05-22 1992-10-20 United Technologies Corporation Radiation resistant sram memory cell
US5111429A (en) * 1990-11-06 1992-05-05 Idaho Research Foundation, Inc. Single event upset hardening CMOS memory circuit
US5338963A (en) * 1993-04-05 1994-08-16 International Business Machines Corporation Soft error immune CMOS static RAM cell
FR2725824B1 (fr) * 1994-10-18 1997-01-03 Thomson Csf Semiconducteurs Memoire insensible aux perturbations
US6208554B1 (en) * 1999-05-28 2001-03-27 Lockheed Martin Corporation Single event upset (SEU) hardened static random access memory cell
TW522546B (en) * 2000-12-06 2003-03-01 Mitsubishi Electric Corp Semiconductor memory
JP2002353413A (ja) * 2001-05-28 2002-12-06 Mitsubishi Electric Corp 半導体記憶装置
US20040227094A1 (en) * 2003-02-09 2004-11-18 Tompa Gary S. Microelectronic radiation detector
FR2875328B1 (fr) * 2004-09-15 2007-03-16 St Microelectronics Sa Cellule memoire sram protegee contre des pics de courant ou de tension

Also Published As

Publication number Publication date
US7872894B2 (en) 2011-01-18
US7535743B2 (en) 2009-05-19
FR2875328A1 (fr) 2006-03-17
US20060056220A1 (en) 2006-03-16
US20090196085A1 (en) 2009-08-06

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20130531