FR2851074B1 - Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoire - Google Patents

Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoire

Info

Publication number
FR2851074B1
FR2851074B1 FR0301558A FR0301558A FR2851074B1 FR 2851074 B1 FR2851074 B1 FR 2851074B1 FR 0301558 A FR0301558 A FR 0301558A FR 0301558 A FR0301558 A FR 0301558A FR 2851074 B1 FR2851074 B1 FR 2851074B1
Authority
FR
France
Prior art keywords
sectorized
controlling
refreshing
flash memory
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0301558A
Other languages
English (en)
Other versions
FR2851074A1 (fr
Inventor
Paola Cavaleri
Sebastien Zink
Bruno Leconte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0301558A priority Critical patent/FR2851074B1/fr
Priority to US10/775,032 priority patent/US6965526B2/en
Publication of FR2851074A1 publication Critical patent/FR2851074A1/fr
Application granted granted Critical
Publication of FR2851074B1 publication Critical patent/FR2851074B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
FR0301558A 2003-02-10 2003-02-10 Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoire Expired - Fee Related FR2851074B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0301558A FR2851074B1 (fr) 2003-02-10 2003-02-10 Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoire
US10/775,032 US6965526B2 (en) 2003-02-10 2004-02-09 Sectored flash memory comprising means for controlling and for refreshing memory cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0301558A FR2851074B1 (fr) 2003-02-10 2003-02-10 Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoire

Publications (2)

Publication Number Publication Date
FR2851074A1 FR2851074A1 (fr) 2004-08-13
FR2851074B1 true FR2851074B1 (fr) 2005-04-22

Family

ID=32731915

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0301558A Expired - Fee Related FR2851074B1 (fr) 2003-02-10 2003-02-10 Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoire

Country Status (2)

Country Link
US (1) US6965526B2 (fr)
FR (1) FR2851074B1 (fr)

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JP4335659B2 (ja) * 2003-12-19 2009-09-30 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US7254692B1 (en) * 2004-03-02 2007-08-07 Advanced Micro Devices, Inc. Testing for operating life of a memory device with address cycling using a gray code sequence
JP2007012173A (ja) * 2005-06-30 2007-01-18 Toshiba Corp 半導体記憶装置
JP2007157296A (ja) * 2005-12-08 2007-06-21 Toshiba Corp 半導体記憶装置
US7447096B2 (en) 2006-05-05 2008-11-04 Honeywell International Inc. Method for refreshing a non-volatile memory
US7636259B1 (en) 2006-07-17 2009-12-22 Lallice Semiconductor Corporation Flash memory array with independently erasable sectors
US7512015B1 (en) 2006-07-17 2009-03-31 Lattice Semiconductor Corporation Negative voltage blocking for embedded memories
EP1884955A1 (fr) * 2006-07-28 2008-02-06 STMicroelectronics S.r.l. Compteur d'adresses pour dispositif de mémoire non-volatile
CN101425337B (zh) * 2007-10-29 2011-11-30 芯邦科技（深圳）有限公司 一种闪存数据存储方法和装置
US9141475B2 (en) * 2008-11-23 2015-09-22 Sandisk Technologies Methods for tag-grouping of blocks in storage devices
US7859932B2 (en) * 2008-12-18 2010-12-28 Sandisk Corporation Data refresh for non-volatile storage
TWI405208B (zh) * 2009-08-06 2013-08-11 Novatek Microelectronics Corp 快閃記憶體及其存取方法
US8255642B2 (en) * 2009-12-03 2012-08-28 International Business Machines Corporation Automatic detection of stress condition
US11152050B2 (en) 2018-06-19 2021-10-19 Micron Technology, Inc. Apparatuses and methods for multiple row hammer refresh address sequences
EP3627308A1 (fr) 2018-09-20 2020-03-25 STMicroelectronics Srl Procédé de gestion de mémoires, circuit, dispositif et produit-programme d'ordinateur correspondants
US11043254B2 (en) 2019-03-19 2021-06-22 Micron Technology, Inc. Semiconductor device having cam that stores address signals
US11264096B2 (en) 2019-05-14 2022-03-01 Micron Technology, Inc. Apparatuses, systems, and methods for a content addressable memory cell with latch and comparator circuits
US11158364B2 (en) 2019-05-31 2021-10-26 Micron Technology, Inc. Apparatuses and methods for tracking victim rows
US11158373B2 (en) 2019-06-11 2021-10-26 Micron Technology, Inc. Apparatuses, systems, and methods for determining extremum numerical values
US11139015B2 (en) 2019-07-01 2021-10-05 Micron Technology, Inc. Apparatuses and methods for monitoring word line accesses
US10832792B1 (en) 2019-07-01 2020-11-10 Micron Technology, Inc. Apparatuses and methods for adjusting victim data
US10964378B2 (en) 2019-08-22 2021-03-30 Micron Technology, Inc. Apparatus and method including analog accumulator for determining row access rate and target row address used for refresh operation
US11462291B2 (en) * 2020-11-23 2022-10-04 Micron Technology, Inc. Apparatuses and methods for tracking word line accesses
US11482275B2 (en) 2021-01-20 2022-10-25 Micron Technology, Inc. Apparatuses and methods for dynamically allocated aggressor detection
US11600314B2 (en) 2021-03-15 2023-03-07 Micron Technology, Inc. Apparatuses and methods for sketch circuits for refresh binning
US11579797B2 (en) * 2021-04-29 2023-02-14 Micron Technology, Inc. Memory sub-system refresh
US11664063B2 (en) 2021-08-12 2023-05-30 Micron Technology, Inc. Apparatuses and methods for countering memory attacks
US11688451B2 (en) 2021-11-29 2023-06-27 Micron Technology, Inc. Apparatuses, systems, and methods for main sketch and slim sketch circuit for row address tracking

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5386533A (en) * 1990-11-21 1995-01-31 Texas Instruments Incorporated Method and apparatus for maintaining variable data in a non-volatile electronic memory device
US6005810A (en) * 1998-08-10 1999-12-21 Integrated Silicon Solution, Inc. Byte-programmable flash memory having counters and secondary storage for disturb control during program and erase operations
FR2810152A1 (fr) * 2000-06-13 2001-12-14 St Microelectronics Sa Memoire eeprom securisee comprenant un circuit de correction d'erreur
US6345001B1 (en) * 2000-09-14 2002-02-05 Sandisk Corporation Compressed event counting technique and application to a flash memory system
FR2816751A1 (fr) * 2000-11-15 2002-05-17 St Microelectronics Sa Memoire flash effacable par page
EP1233421B1 (fr) * 2001-02-19 2007-07-11 STMicroelectronics S.r.l. Procédé de rafraîchissement de données emmagasinées dans une mémoire non volatile effaçable et programmable électriquement

Also Published As

Publication number Publication date
FR2851074A1 (fr) 2004-08-13
US20040213035A1 (en) 2004-10-28
US6965526B2 (en) 2005-11-15

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Date Code Title Description
ST Notification of lapse

Effective date: 20101029