FR2851074B1 - Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoire - Google Patents
Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoireInfo
- Publication number
- FR2851074B1 FR2851074B1 FR0301558A FR0301558A FR2851074B1 FR 2851074 B1 FR2851074 B1 FR 2851074B1 FR 0301558 A FR0301558 A FR 0301558A FR 0301558 A FR0301558 A FR 0301558A FR 2851074 B1 FR2851074 B1 FR 2851074B1
- Authority
- FR
- France
- Prior art keywords
- sectorized
- controlling
- refreshing
- flash memory
- memory cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0301558A FR2851074B1 (fr) | 2003-02-10 | 2003-02-10 | Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoire |
US10/775,032 US6965526B2 (en) | 2003-02-10 | 2004-02-09 | Sectored flash memory comprising means for controlling and for refreshing memory cells |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0301558A FR2851074B1 (fr) | 2003-02-10 | 2003-02-10 | Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoire |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2851074A1 FR2851074A1 (fr) | 2004-08-13 |
FR2851074B1 true FR2851074B1 (fr) | 2005-04-22 |
Family
ID=32731915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0301558A Expired - Fee Related FR2851074B1 (fr) | 2003-02-10 | 2003-02-10 | Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoire |
Country Status (2)
Country | Link |
---|---|
US (1) | US6965526B2 (fr) |
FR (1) | FR2851074B1 (fr) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4335659B2 (ja) * | 2003-12-19 | 2009-09-30 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
US7254692B1 (en) * | 2004-03-02 | 2007-08-07 | Advanced Micro Devices, Inc. | Testing for operating life of a memory device with address cycling using a gray code sequence |
JP2007012173A (ja) * | 2005-06-30 | 2007-01-18 | Toshiba Corp | 半導体記憶装置 |
JP2007157296A (ja) * | 2005-12-08 | 2007-06-21 | Toshiba Corp | 半導体記憶装置 |
US7447096B2 (en) | 2006-05-05 | 2008-11-04 | Honeywell International Inc. | Method for refreshing a non-volatile memory |
US7636259B1 (en) | 2006-07-17 | 2009-12-22 | Lallice Semiconductor Corporation | Flash memory array with independently erasable sectors |
US7512015B1 (en) | 2006-07-17 | 2009-03-31 | Lattice Semiconductor Corporation | Negative voltage blocking for embedded memories |
EP1884955A1 (fr) * | 2006-07-28 | 2008-02-06 | STMicroelectronics S.r.l. | Compteur d'adresses pour dispositif de mémoire non-volatile |
CN101425337B (zh) * | 2007-10-29 | 2011-11-30 | 芯邦科技(深圳)有限公司 | 一种闪存数据存储方法和装置 |
US9141475B2 (en) * | 2008-11-23 | 2015-09-22 | Sandisk Technologies | Methods for tag-grouping of blocks in storage devices |
US7859932B2 (en) * | 2008-12-18 | 2010-12-28 | Sandisk Corporation | Data refresh for non-volatile storage |
TWI405208B (zh) * | 2009-08-06 | 2013-08-11 | Novatek Microelectronics Corp | 快閃記憶體及其存取方法 |
US8255642B2 (en) * | 2009-12-03 | 2012-08-28 | International Business Machines Corporation | Automatic detection of stress condition |
US11152050B2 (en) | 2018-06-19 | 2021-10-19 | Micron Technology, Inc. | Apparatuses and methods for multiple row hammer refresh address sequences |
EP3627308A1 (fr) | 2018-09-20 | 2020-03-25 | STMicroelectronics Srl | Procédé de gestion de mémoires, circuit, dispositif et produit-programme d'ordinateur correspondants |
US11043254B2 (en) | 2019-03-19 | 2021-06-22 | Micron Technology, Inc. | Semiconductor device having cam that stores address signals |
US11264096B2 (en) | 2019-05-14 | 2022-03-01 | Micron Technology, Inc. | Apparatuses, systems, and methods for a content addressable memory cell with latch and comparator circuits |
US11158364B2 (en) | 2019-05-31 | 2021-10-26 | Micron Technology, Inc. | Apparatuses and methods for tracking victim rows |
US11158373B2 (en) | 2019-06-11 | 2021-10-26 | Micron Technology, Inc. | Apparatuses, systems, and methods for determining extremum numerical values |
US11139015B2 (en) | 2019-07-01 | 2021-10-05 | Micron Technology, Inc. | Apparatuses and methods for monitoring word line accesses |
US10832792B1 (en) | 2019-07-01 | 2020-11-10 | Micron Technology, Inc. | Apparatuses and methods for adjusting victim data |
US10964378B2 (en) | 2019-08-22 | 2021-03-30 | Micron Technology, Inc. | Apparatus and method including analog accumulator for determining row access rate and target row address used for refresh operation |
US11462291B2 (en) * | 2020-11-23 | 2022-10-04 | Micron Technology, Inc. | Apparatuses and methods for tracking word line accesses |
US11482275B2 (en) | 2021-01-20 | 2022-10-25 | Micron Technology, Inc. | Apparatuses and methods for dynamically allocated aggressor detection |
US11600314B2 (en) | 2021-03-15 | 2023-03-07 | Micron Technology, Inc. | Apparatuses and methods for sketch circuits for refresh binning |
US11579797B2 (en) * | 2021-04-29 | 2023-02-14 | Micron Technology, Inc. | Memory sub-system refresh |
US11664063B2 (en) | 2021-08-12 | 2023-05-30 | Micron Technology, Inc. | Apparatuses and methods for countering memory attacks |
US11688451B2 (en) | 2021-11-29 | 2023-06-27 | Micron Technology, Inc. | Apparatuses, systems, and methods for main sketch and slim sketch circuit for row address tracking |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5386533A (en) * | 1990-11-21 | 1995-01-31 | Texas Instruments Incorporated | Method and apparatus for maintaining variable data in a non-volatile electronic memory device |
US6005810A (en) * | 1998-08-10 | 1999-12-21 | Integrated Silicon Solution, Inc. | Byte-programmable flash memory having counters and secondary storage for disturb control during program and erase operations |
FR2810152A1 (fr) * | 2000-06-13 | 2001-12-14 | St Microelectronics Sa | Memoire eeprom securisee comprenant un circuit de correction d'erreur |
US6345001B1 (en) * | 2000-09-14 | 2002-02-05 | Sandisk Corporation | Compressed event counting technique and application to a flash memory system |
FR2816751A1 (fr) * | 2000-11-15 | 2002-05-17 | St Microelectronics Sa | Memoire flash effacable par page |
EP1233421B1 (fr) * | 2001-02-19 | 2007-07-11 | STMicroelectronics S.r.l. | Procédé de rafraîchissement de données emmagasinées dans une mémoire non volatile effaçable et programmable électriquement |
-
2003
- 2003-02-10 FR FR0301558A patent/FR2851074B1/fr not_active Expired - Fee Related
-
2004
- 2004-02-09 US US10/775,032 patent/US6965526B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2851074A1 (fr) | 2004-08-13 |
US20040213035A1 (en) | 2004-10-28 |
US6965526B2 (en) | 2005-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20101029 |