FR2816750B1 - Memoire flash comprenant des moyens de controle de la tension de seuil de cellules memoire - Google Patents

Memoire flash comprenant des moyens de controle de la tension de seuil de cellules memoire

Info

Publication number
FR2816750B1
FR2816750B1 FR0014742A FR0014742A FR2816750B1 FR 2816750 B1 FR2816750 B1 FR 2816750B1 FR 0014742 A FR0014742 A FR 0014742A FR 0014742 A FR0014742 A FR 0014742A FR 2816750 B1 FR2816750 B1 FR 2816750B1
Authority
FR
France
Prior art keywords
memory
controlling
threshold voltage
cells
flash memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0014742A
Other languages
English (en)
Other versions
FR2816750A1 (fr
Inventor
Paola Cavaleri
Bruno Leconte
Sebastien Zink
Jean Devin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0014742A priority Critical patent/FR2816750B1/fr
Priority to US09/997,214 priority patent/US6568510B2/en
Publication of FR2816750A1 publication Critical patent/FR2816750A1/fr
Application granted granted Critical
Publication of FR2816750B1 publication Critical patent/FR2816750B1/fr
Priority to US10/352,581 priority patent/US6714453B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
FR0014742A 2000-11-15 2000-11-15 Memoire flash comprenant des moyens de controle de la tension de seuil de cellules memoire Expired - Fee Related FR2816750B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0014742A FR2816750B1 (fr) 2000-11-15 2000-11-15 Memoire flash comprenant des moyens de controle de la tension de seuil de cellules memoire
US09/997,214 US6568510B2 (en) 2000-11-15 2001-11-15 Flash memory including means of checking memory cell threshold voltages
US10/352,581 US6714453B2 (en) 2000-11-15 2003-01-28 Flash memory including means of checking memory cell threshold voltages

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0014742A FR2816750B1 (fr) 2000-11-15 2000-11-15 Memoire flash comprenant des moyens de controle de la tension de seuil de cellules memoire

Publications (2)

Publication Number Publication Date
FR2816750A1 FR2816750A1 (fr) 2002-05-17
FR2816750B1 true FR2816750B1 (fr) 2003-01-24

Family

ID=8856507

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0014742A Expired - Fee Related FR2816750B1 (fr) 2000-11-15 2000-11-15 Memoire flash comprenant des moyens de controle de la tension de seuil de cellules memoire

Country Status (2)

Country Link
US (2) US6568510B2 (fr)
FR (1) FR2816750B1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3906177B2 (ja) * 2002-05-10 2007-04-18 株式会社東芝 不揮発性半導体記憶装置
FR2856185A1 (fr) * 2003-06-12 2004-12-17 St Microelectronics Sa Memoire flash programmable par mot
US7298646B1 (en) 2004-08-11 2007-11-20 Altera Corporation Apparatus for configuring programmable logic devices and associated methods
EP1807841B1 (fr) 2004-10-21 2009-05-20 Nxp B.V. Memoire et procede de creation d'un mecanisme de rafraichissement base sur un seuil de moyennes
US7447944B2 (en) 2005-04-29 2008-11-04 Freescale Semiconductor, Inc. Predictive methods and apparatus for non-volatile memory
US7483305B2 (en) * 2006-08-28 2009-01-27 Micron Technology, Inc. Method, apparatus and system relating to automatic cell threshold voltage measurement
WO2008024688A2 (fr) * 2006-08-25 2008-02-28 Micron Technology, Inc. Procédé, appareil et système concernant la mesure de tension seuil de cellule automatique
US8031521B1 (en) * 2008-05-20 2011-10-04 Marvell International Ltd. Reprogramming non-volatile memory devices for read disturbance mitigation
US9159452B2 (en) 2008-11-14 2015-10-13 Micron Technology, Inc. Automatic word line leakage measurement circuitry
KR100929371B1 (ko) * 2009-03-18 2009-12-02 한국과학기술원 페이지-디퍼런셜을 이용하여 ｄｂｍｓ에 독립적인 방법으로 플래시 메모리에 데이터를 저장하는 방법
US8588007B2 (en) 2011-02-28 2013-11-19 Micron Technology, Inc. Leakage measurement systems
US8634264B2 (en) 2011-10-26 2014-01-21 Micron Technology, Inc. Apparatuses, integrated circuits, and methods for measuring leakage current
US9053810B2 (en) 2013-03-08 2015-06-09 Sandisk Technologies Inc. Defect or program disturb detection with full data recovery capability
KR20200019045A (ko) * 2018-08-13 2020-02-21 에스케이하이닉스 주식회사 메모리 장치 및 그것의 동작 방법
CN113421601B (zh) * 2021-06-29 2022-11-04 长江存储科技有限责任公司 闪存存储器的操作方法以及闪存存储器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947410A (en) * 1989-02-23 1990-08-07 General Motors Corporation Method and apparatus for counting with a nonvolatile memory
US5239505A (en) * 1990-12-28 1993-08-24 Intel Corporation Floating gate non-volatile memory with blocks and memory refresh
JPH07320488A (ja) * 1994-05-19 1995-12-08 Hitachi Ltd 一括消去型不揮発性記憶装置とその消去方法
JP3404712B2 (ja) * 1996-05-15 2003-05-12 株式会社東芝 不揮発性半導体記憶装置及びその書き込み方法
US6381670B1 (en) * 1997-01-07 2002-04-30 Aplus Flash Technology, Inc. Flash memory array having maximum and minimum threshold voltage detection for eliminating over-erasure problem and enhancing write operation
US6021083A (en) * 1997-12-05 2000-02-01 Macronix International Co., Ltd. Block decoded wordline driver with positive and negative voltage modes
US6088268A (en) * 1998-09-17 2000-07-11 Atmel Corporation Flash memory array with internal refresh

Also Published As

Publication number Publication date
US20030133344A1 (en) 2003-07-17
FR2816750A1 (fr) 2002-05-17
US20020119625A1 (en) 2002-08-29
US6714453B2 (en) 2004-03-30
US6568510B2 (en) 2003-05-27

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Legal Events

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Effective date: 20100730