JP2002198372A - 半導体デバイスの製造方法および半導体デバイス - Google Patents

半導体デバイスの製造方法および半導体デバイス

Info

Publication number
JP2002198372A
JP2002198372A JP2000396902A JP2000396902A JP2002198372A JP 2002198372 A JP2002198372 A JP 2002198372A JP 2000396902 A JP2000396902 A JP 2000396902A JP 2000396902 A JP2000396902 A JP 2000396902A JP 2002198372 A JP2002198372 A JP 2002198372A
Authority
JP
Japan
Prior art keywords
semiconductor device
insulating film
pattern
hole
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000396902A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002198372A5 (enrdf_load_stackoverflow
Inventor
Mikio Hongo
幹雄 本郷
Akira Shimase
朗 嶋瀬
Katsuro Mizukoshi
克郎 水越
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000396902A priority Critical patent/JP2002198372A/ja
Publication of JP2002198372A publication Critical patent/JP2002198372A/ja
Publication of JP2002198372A5 publication Critical patent/JP2002198372A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000396902A 2000-12-25 2000-12-25 半導体デバイスの製造方法および半導体デバイス Pending JP2002198372A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000396902A JP2002198372A (ja) 2000-12-25 2000-12-25 半導体デバイスの製造方法および半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000396902A JP2002198372A (ja) 2000-12-25 2000-12-25 半導体デバイスの製造方法および半導体デバイス

Publications (2)

Publication Number Publication Date
JP2002198372A true JP2002198372A (ja) 2002-07-12
JP2002198372A5 JP2002198372A5 (enrdf_load_stackoverflow) 2006-03-16

Family

ID=18862117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000396902A Pending JP2002198372A (ja) 2000-12-25 2000-12-25 半導体デバイスの製造方法および半導体デバイス

Country Status (1)

Country Link
JP (1) JP2002198372A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005032759A (ja) * 2003-07-07 2005-02-03 Seiko Epson Corp 多層配線の形成方法、配線基板の製造方法、デバイスの製造方法
JP2005032758A (ja) * 2003-07-07 2005-02-03 Seiko Epson Corp 多層配線の形成方法、配線基板の製造方法、デバイスの製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147283A (ja) * 1993-07-26 1995-06-06 At & T Global Inf Solutions Internatl Inc 集積回路のスピンオン電導体の生成プロセス
JPH08293498A (ja) * 1995-04-21 1996-11-05 Sony Corp 半導体装置の製造方法
JPH09134891A (ja) * 1995-09-06 1997-05-20 Vacuum Metallurgical Co Ltd 半導体基板への薄膜形成方法
JPH09275104A (ja) * 1996-04-04 1997-10-21 Hitachi Ltd 配線接続方法およびその装置
JPH10125780A (ja) * 1996-10-18 1998-05-15 Nec Corp 薄膜の形成方法および形成装置
JPH111778A (ja) * 1997-04-08 1999-01-06 Tori Chem Kenkyusho:Kk 膜形成方法、及び膜形成方法に用いられる液
JP2000260865A (ja) * 1999-03-08 2000-09-22 Tori Chemical Kenkyusho:Kk 配線膜形成方法及び配線膜構造
JP2000309872A (ja) * 1999-02-26 2000-11-07 Dainippon Screen Mfg Co Ltd 金属薄膜形成方法および基板処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147283A (ja) * 1993-07-26 1995-06-06 At & T Global Inf Solutions Internatl Inc 集積回路のスピンオン電導体の生成プロセス
JPH08293498A (ja) * 1995-04-21 1996-11-05 Sony Corp 半導体装置の製造方法
JPH09134891A (ja) * 1995-09-06 1997-05-20 Vacuum Metallurgical Co Ltd 半導体基板への薄膜形成方法
JPH09275104A (ja) * 1996-04-04 1997-10-21 Hitachi Ltd 配線接続方法およびその装置
JPH10125780A (ja) * 1996-10-18 1998-05-15 Nec Corp 薄膜の形成方法および形成装置
JPH111778A (ja) * 1997-04-08 1999-01-06 Tori Chem Kenkyusho:Kk 膜形成方法、及び膜形成方法に用いられる液
JP2000309872A (ja) * 1999-02-26 2000-11-07 Dainippon Screen Mfg Co Ltd 金属薄膜形成方法および基板処理装置
JP2000260865A (ja) * 1999-03-08 2000-09-22 Tori Chemical Kenkyusho:Kk 配線膜形成方法及び配線膜構造

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005032759A (ja) * 2003-07-07 2005-02-03 Seiko Epson Corp 多層配線の形成方法、配線基板の製造方法、デバイスの製造方法
JP2005032758A (ja) * 2003-07-07 2005-02-03 Seiko Epson Corp 多層配線の形成方法、配線基板の製造方法、デバイスの製造方法

Similar Documents

Publication Publication Date Title
US6992005B2 (en) Semiconductor device and method of manufacturing the same
KR100475931B1 (ko) 반도체 소자의 다층 배선 형성방법
TW541659B (en) Method of fabricating contact plug
TWI552226B (zh) 用於後段製程金屬化之混合型錳和氮化錳阻障物及其製造方法
KR100652334B1 (ko) 캡층을 갖는 반도체 상호연결 구조물 상에 금속층을피착하는 방법
US6383911B2 (en) Semiconductor device and method for making the same
JP2006518927A (ja) 半導体相互接続構造上に金属層を堆積するための方法
JP2002075994A (ja) 半導体装置及びその製造方法
US11069530B2 (en) Etching platinum-containing thin film using protective cap layer
JP2004000006U (ja) 半導体装置
JP2004000006U6 (ja) 半導体装置
JP2004356610A (ja) 低い抵抗を有する半導体装置およびその製造方法
JPS6353949A (ja) 金属配線の形成方法
US6548398B1 (en) Production method of semiconductor device and production device therefor
JP2002198372A (ja) 半導体デバイスの製造方法および半導体デバイス
US8076235B2 (en) Semiconductor device and fabrication method thereof
JPH08139190A (ja) 半導体装置の製造方法
JP3998937B2 (ja) 銅金属化プロセスにおけるＴａＣＮバリア層の製造方法
WO2003069662A1 (fr) Procede de fabrication d'un dispositif semi-conducteur, et dispositif semi-conducteur
JP3087692B2 (ja) 半導体装置の製造方法
US20110086510A1 (en) Semiconductor device and method of manufacture thereof
GB2307341A (en) Method of forming a tungsten plug of a semiconductor device.
JPH11121622A (ja) 半導体素子のコンタクト形成方法
JP2000216239A (ja) 銅内部結線の形成方法
KR100458589B1 (ko) 반도체 소자 제조 방법

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20040309

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060130

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060803

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070116

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070315

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070807

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20071204