JP2002151795A - 窒化物半導体発光素子、光ピックアップ装置、白色光源装置および表示装置 - Google Patents

窒化物半導体発光素子、光ピックアップ装置、白色光源装置および表示装置

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Publication number
JP2002151795A
JP2002151795A JP2000343443A JP2000343443A JP2002151795A JP 2002151795 A JP2002151795 A JP 2002151795A JP 2000343443 A JP2000343443 A JP 2000343443A JP 2000343443 A JP2000343443 A JP 2000343443A JP 2002151795 A JP2002151795 A JP 2002151795A
Authority
JP
Japan
Prior art keywords
layer
light emitting
nitride semiconductor
substrate
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000343443A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002151795A5 (enExample
Inventor
Yuzo Tsuda
有三 津田
Shigetoshi Ito
茂稔 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2000343443A priority Critical patent/JP2002151795A/ja
Priority to US10/415,699 priority patent/US6909120B2/en
Priority to PCT/JP2001/009668 priority patent/WO2002039555A1/ja
Publication of JP2002151795A publication Critical patent/JP2002151795A/ja
Publication of JP2002151795A5 publication Critical patent/JP2002151795A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2000343443A 2000-11-10 2000-11-10 窒化物半導体発光素子、光ピックアップ装置、白色光源装置および表示装置 Pending JP2002151795A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000343443A JP2002151795A (ja) 2000-11-10 2000-11-10 窒化物半導体発光素子、光ピックアップ装置、白色光源装置および表示装置
US10/415,699 US6909120B2 (en) 2000-11-10 2001-11-05 Nitride semiconductor luminous element and optical device including it
PCT/JP2001/009668 WO2002039555A1 (en) 2000-11-10 2001-11-05 Nitride semiconductor luminous element and optical device including it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000343443A JP2002151795A (ja) 2000-11-10 2000-11-10 窒化物半導体発光素子、光ピックアップ装置、白色光源装置および表示装置

Publications (2)

Publication Number Publication Date
JP2002151795A true JP2002151795A (ja) 2002-05-24
JP2002151795A5 JP2002151795A5 (enExample) 2007-03-08

Family

ID=18817809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000343443A Pending JP2002151795A (ja) 2000-11-10 2000-11-10 窒化物半導体発光素子、光ピックアップ装置、白色光源装置および表示装置

Country Status (1)

Country Link
JP (1) JP2002151795A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194561A (ja) * 2006-01-23 2007-08-02 Nec Corp 面発光レーザ
JP2011054834A (ja) * 2009-09-03 2011-03-17 Sharp Corp 窒化物半導体レーザ素子
WO2017017891A1 (ja) * 2015-07-30 2017-02-02 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0449689A (ja) * 1990-06-19 1992-02-19 Nec Corp 歪量子井戸半導体レーザ
JPH04260386A (ja) * 1991-02-15 1992-09-16 Fujitsu Ltd 光半導体装置の製造方法
JPH04369830A (ja) * 1991-06-19 1992-12-22 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体単結晶エピタキシャル基板およびその成長方法
JPH08316581A (ja) * 1995-05-18 1996-11-29 Sanyo Electric Co Ltd 半導体装置および半導体発光素子
JPH10270804A (ja) * 1997-03-26 1998-10-09 Hitachi Ltd 光情報処理装置およびこれに適した固体光源および半導体発光装置
JPH11204880A (ja) * 1998-01-16 1999-07-30 Fuji Photo Film Co Ltd 半導体レーザー

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0449689A (ja) * 1990-06-19 1992-02-19 Nec Corp 歪量子井戸半導体レーザ
JPH04260386A (ja) * 1991-02-15 1992-09-16 Fujitsu Ltd 光半導体装置の製造方法
JPH04369830A (ja) * 1991-06-19 1992-12-22 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体単結晶エピタキシャル基板およびその成長方法
JPH08316581A (ja) * 1995-05-18 1996-11-29 Sanyo Electric Co Ltd 半導体装置および半導体発光素子
JPH10270804A (ja) * 1997-03-26 1998-10-09 Hitachi Ltd 光情報処理装置およびこれに適した固体光源および半導体発光装置
JPH11204880A (ja) * 1998-01-16 1999-07-30 Fuji Photo Film Co Ltd 半導体レーザー

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194561A (ja) * 2006-01-23 2007-08-02 Nec Corp 面発光レーザ
JP2011054834A (ja) * 2009-09-03 2011-03-17 Sharp Corp 窒化物半導体レーザ素子
WO2017017891A1 (ja) * 2015-07-30 2017-02-02 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP2017034036A (ja) * 2015-07-30 2017-02-09 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US10573783B2 (en) 2015-07-30 2020-02-25 Dowa Electronics Materials Co., Ltd. Group III nitride semiconductor light-emitting element and method of manufacturing same
US11024769B2 (en) 2015-07-30 2021-06-01 Dowa Electronics Materials Co., Ltd. Group III nitride semiconductor light-emitting element and method of manufacturing same

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