JP2002151795A5 - - Google Patents
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- JP2002151795A5 JP2002151795A5 JP2000343443A JP2000343443A JP2002151795A5 JP 2002151795 A5 JP2002151795 A5 JP 2002151795A5 JP 2000343443 A JP2000343443 A JP 2000343443A JP 2000343443 A JP2000343443 A JP 2000343443A JP 2002151795 A5 JP2002151795 A5 JP 2002151795A5
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- JP
- Japan
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000343443A JP2002151795A (ja) | 2000-11-10 | 2000-11-10 | 窒化物半導体発光素子、光ピックアップ装置、白色光源装置および表示装置 |
| US10/415,699 US6909120B2 (en) | 2000-11-10 | 2001-11-05 | Nitride semiconductor luminous element and optical device including it |
| PCT/JP2001/009668 WO2002039555A1 (en) | 2000-11-10 | 2001-11-05 | Nitride semiconductor luminous element and optical device including it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000343443A JP2002151795A (ja) | 2000-11-10 | 2000-11-10 | 窒化物半導体発光素子、光ピックアップ装置、白色光源装置および表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002151795A JP2002151795A (ja) | 2002-05-24 |
| JP2002151795A5 true JP2002151795A5 (enExample) | 2007-03-08 |
Family
ID=18817809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000343443A Pending JP2002151795A (ja) | 2000-11-10 | 2000-11-10 | 窒化物半導体発光素子、光ピックアップ装置、白色光源装置および表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002151795A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007194561A (ja) * | 2006-01-23 | 2007-08-02 | Nec Corp | 面発光レーザ |
| JP2011054834A (ja) * | 2009-09-03 | 2011-03-17 | Sharp Corp | 窒化物半導体レーザ素子 |
| JP6092961B2 (ja) | 2015-07-30 | 2017-03-08 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2712767B2 (ja) * | 1990-06-19 | 1998-02-16 | 日本電気株式会社 | 歪量子井戸半導体レーザ |
| JPH04260386A (ja) * | 1991-02-15 | 1992-09-16 | Fujitsu Ltd | 光半導体装置の製造方法 |
| JP2587150B2 (ja) * | 1991-06-19 | 1997-03-05 | 日本電信電話株式会社 | 化合物半導体単結晶エピタキシャル基板およびその成長方法 |
| JPH08316581A (ja) * | 1995-05-18 | 1996-11-29 | Sanyo Electric Co Ltd | 半導体装置および半導体発光素子 |
| JPH10270804A (ja) * | 1997-03-26 | 1998-10-09 | Hitachi Ltd | 光情報処理装置およびこれに適した固体光源および半導体発光装置 |
| JPH11204880A (ja) * | 1998-01-16 | 1999-07-30 | Fuji Photo Film Co Ltd | 半導体レーザー |
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2000
- 2000-11-10 JP JP2000343443A patent/JP2002151795A/ja active Pending