JP2002151496A5 - - Google Patents
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- Publication number
- JP2002151496A5 JP2002151496A5 JP2001136357A JP2001136357A JP2002151496A5 JP 2002151496 A5 JP2002151496 A5 JP 2002151496A5 JP 2001136357 A JP2001136357 A JP 2001136357A JP 2001136357 A JP2001136357 A JP 2001136357A JP 2002151496 A5 JP2002151496 A5 JP 2002151496A5
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- conductive
- plasma chamber
- strap
- conductive straps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/563963 | 2000-05-03 | ||
| US09/563,963 US6857387B1 (en) | 2000-05-03 | 2000-05-03 | Multiple frequency plasma chamber with grounding capacitor at cathode |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011157868A Division JP5600644B2 (ja) | 2000-05-03 | 2011-07-19 | ワークピース製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002151496A JP2002151496A (ja) | 2002-05-24 |
| JP2002151496A5 true JP2002151496A5 (https=) | 2008-07-24 |
| JP4817528B2 JP4817528B2 (ja) | 2011-11-16 |
Family
ID=24252614
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001136357A Expired - Lifetime JP4817528B2 (ja) | 2000-05-03 | 2001-05-07 | 電子ワークピース製造装置 |
| JP2011157868A Expired - Lifetime JP5600644B2 (ja) | 2000-05-03 | 2011-07-19 | ワークピース製造装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011157868A Expired - Lifetime JP5600644B2 (ja) | 2000-05-03 | 2011-07-19 | ワークピース製造装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6857387B1 (https=) |
| JP (2) | JP4817528B2 (https=) |
| KR (5) | KR20010102930A (https=) |
| SG (1) | SG91920A1 (https=) |
| TW (1) | TWI241649B (https=) |
Families Citing this family (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6772827B2 (en) * | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
| US6477980B1 (en) * | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
| JP4557400B2 (ja) * | 2000-09-14 | 2010-10-06 | キヤノン株式会社 | 堆積膜形成方法 |
| US7316761B2 (en) * | 2003-02-03 | 2008-01-08 | Applied Materials, Inc. | Apparatus for uniformly etching a dielectric layer |
| KR100490049B1 (ko) * | 2003-04-14 | 2005-05-17 | 삼성전자주식회사 | 일체형 디퓨저 프레임을 가지는 cvd 장치 |
| KR100965758B1 (ko) * | 2003-05-22 | 2010-06-24 | 주성엔지니어링(주) | 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리 |
| US7083702B2 (en) * | 2003-06-12 | 2006-08-01 | Applied Materials, Inc. | RF current return path for a large area substrate plasma reactor |
| US7107125B2 (en) * | 2003-10-29 | 2006-09-12 | Applied Materials, Inc. | Method and apparatus for monitoring the position of a semiconductor processing robot |
| JP4698251B2 (ja) * | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
| CH706979B1 (en) * | 2004-04-30 | 2014-03-31 | Tel Solar Ag | Method for producing a disc-shaped workpiece based on a dielectric substrate and vacuum treatment plant therefor. |
| KR100710923B1 (ko) * | 2004-06-02 | 2007-04-23 | 동경 엘렉트론 주식회사 | 플라즈마 처리장치 및 임피던스 조정방법 |
| KR100646104B1 (ko) * | 2004-07-02 | 2006-11-15 | 주식회사 에이디피엔지니어링 | 접지장치 |
| KR100596329B1 (ko) * | 2004-07-02 | 2006-07-06 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치의 접지수단 |
| JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US20060090773A1 (en) * | 2004-11-04 | 2006-05-04 | Applied Materials, Inc. | Sulfur hexafluoride remote plasma source clean |
| US7641762B2 (en) * | 2005-09-02 | 2010-01-05 | Applied Materials, Inc. | Gas sealing skirt for suspended showerhead in process chamber |
| KR100714882B1 (ko) | 2006-02-01 | 2007-05-04 | 주식회사 에스에프에이 | 평면디스플레이용 화학 기상 증착장치 |
| KR101197020B1 (ko) * | 2006-06-09 | 2012-11-06 | 주성엔지니어링(주) | 균일한 플라즈마 방전을 위한 기판처리장치 및 이를이용하여 플라즈마 방전세기를 조절하는 방법 |
| KR101346081B1 (ko) * | 2006-06-20 | 2013-12-31 | 참엔지니어링(주) | 플라스마 에칭 챔버 |
| US7416677B2 (en) * | 2006-08-11 | 2008-08-26 | Tokyo Electron Limited | Exhaust assembly for plasma processing system and method |
| US7776178B2 (en) * | 2006-10-25 | 2010-08-17 | Applied Materials, Inc. | Suspension for showerhead in process chamber |
| US7758763B2 (en) * | 2006-10-31 | 2010-07-20 | Applied Materials, Inc. | Plasma for resist removal and facet control of underlying features |
| US8004293B2 (en) * | 2006-11-20 | 2011-08-23 | Applied Materials, Inc. | Plasma processing chamber with ground member integrity indicator and method for using the same |
| TW200823571A (en) * | 2006-11-30 | 2008-06-01 | Univ Nat Chiao Tung | Plasma device for liquid crystal alignment |
| US20080142481A1 (en) * | 2006-12-18 | 2008-06-19 | White John M | In-situ particle collector |
| KR100889703B1 (ko) * | 2007-04-10 | 2009-03-24 | 주식회사 에스에프에이 | 평면디스플레이용 화학 기상 증착장치 |
| JP4887202B2 (ja) * | 2007-04-17 | 2012-02-29 | 東京エレクトロン株式会社 | プラズマ処理装置及び高周波電流の短絡回路 |
| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
| KR20080105617A (ko) * | 2007-05-31 | 2008-12-04 | 삼성모바일디스플레이주식회사 | 화학기상증착장치 및 플라즈마강화 화학기상증착장치 |
| JP5660753B2 (ja) * | 2007-07-13 | 2015-01-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマエッチング用高温カソード |
| US8269510B2 (en) * | 2007-10-05 | 2012-09-18 | Lam Research Corporation | Apparatus for measuring dielectric properties of parts |
| US20090107955A1 (en) * | 2007-10-26 | 2009-04-30 | Tiner Robin L | Offset liner for chamber evacuation |
| JP5524076B2 (ja) * | 2007-12-25 | 2014-06-18 | アプライド マテリアルズ インコーポレイテッド | プラズマチャンバへrf電力を結合する装置 |
| JP5069581B2 (ja) * | 2008-02-01 | 2012-11-07 | 富士フイルム株式会社 | ガスバリア膜の成膜方法、ガスバリアフィルムおよび有機el素子 |
| KR101577474B1 (ko) * | 2008-02-08 | 2015-12-14 | 램 리써치 코포레이션 | 플라즈마 프로세싱 장치용 rf 리턴 스트랩 |
| KR101490428B1 (ko) * | 2008-02-15 | 2015-02-11 | 엘아이지에이디피 주식회사 | 플라즈마 처리장비용 접지장치 |
| CN102017056B (zh) * | 2008-05-02 | 2013-11-20 | 东电电子太阳能股份公司 | 用于衬底的等离子体处理的等离子体处理设备和方法 |
| JP2011525719A (ja) * | 2008-06-24 | 2011-09-22 | アプライド マテリアルズ インコーポレイテッド | 低温pecvd用途用のペデスタルヒータ |
| JP5157741B2 (ja) * | 2008-08-12 | 2013-03-06 | コニカミノルタホールディングス株式会社 | プラズマ放電処理装置 |
| JP5156552B2 (ja) * | 2008-09-08 | 2013-03-06 | 富士フイルム株式会社 | ガスバリアフィルムの製造方法 |
| JP5683469B2 (ja) * | 2008-10-09 | 2015-03-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 大型プラズマ処理チャンバのrf復路 |
| US20100136261A1 (en) * | 2008-12-03 | 2010-06-03 | Applied Materials, Inc. | Modulation of rf returning straps for uniformity control |
| CN102308675B (zh) * | 2009-02-04 | 2016-01-13 | 应用材料公司 | 用于等离子体工艺的接地回流路径 |
| WO2010094002A2 (en) * | 2009-02-13 | 2010-08-19 | Applied Materials, Inc. | Rf bus and rf return bus for plasma chamber electrode |
| US9039864B2 (en) * | 2009-09-29 | 2015-05-26 | Applied Materials, Inc. | Off-center ground return for RF-powered showerhead |
| TWI432100B (zh) * | 2009-11-25 | 2014-03-21 | Ind Tech Res Inst | 電漿產生裝置 |
| JP5375763B2 (ja) * | 2010-07-27 | 2013-12-25 | 三菱電機株式会社 | プラズマ装置およびこれを用いた半導体薄膜の製造方法 |
| JP5922352B2 (ja) * | 2011-08-11 | 2016-05-24 | Sppテクノロジーズ株式会社 | 窒化膜の製造装置及びその製造方法、並びにその製造プログラム |
| KR101886740B1 (ko) * | 2011-11-01 | 2018-09-11 | 삼성디스플레이 주식회사 | 기상 증착 장치 및 유기 발광 표시 장치 제조 방법 |
| US8911588B2 (en) * | 2012-03-19 | 2014-12-16 | Lam Research Corporation | Methods and apparatus for selectively modifying RF current paths in a plasma processing system |
| US9230779B2 (en) * | 2012-03-19 | 2016-01-05 | Lam Research Corporation | Methods and apparatus for correcting for non-uniformity in a plasma processing system |
| KR101493254B1 (ko) * | 2012-07-09 | 2015-02-16 | 엘아이지에이디피 주식회사 | 원자층 박막 증착장비 |
| KR101493250B1 (ko) * | 2012-07-09 | 2015-02-16 | 엘아이지에이디피 주식회사 | 원자층 박막 증착장비 |
| KR20150022163A (ko) * | 2013-08-22 | 2015-03-04 | 삼성디스플레이 주식회사 | 플라즈마 처리 장치용 스트랩 및 이를 포함하는 플라즈마 처리 장치 |
| CN104746047A (zh) * | 2013-12-31 | 2015-07-01 | 丽佳达普株式会社 | 原子层沉积装置 |
| CN104746048A (zh) * | 2013-12-31 | 2015-07-01 | 丽佳达普株式会社 | 原子层沉积装置 |
| KR200482926Y1 (ko) | 2015-10-02 | 2017-03-16 | (주)씨에스텍 | 뒤틀림 현상을 감소시킨 유기금속 화학증착프로세싱 챔버용 오메가형 히터 |
| US9741584B1 (en) * | 2016-05-05 | 2017-08-22 | Lam Research Corporation | Densification of dielectric film using inductively coupled high density plasma |
| CN109196619B (zh) * | 2016-06-03 | 2021-10-26 | 瑞士艾发科技 | 等离子体蚀刻室和等离子体蚀刻的方法 |
| KR20190091926A (ko) | 2018-01-30 | 2019-08-07 | 에이피시스템 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| CN114008755B (zh) * | 2019-04-29 | 2024-12-20 | 应用材料公司 | 接地带组件 |
| US11450546B2 (en) * | 2020-04-09 | 2022-09-20 | Applied Materials, Inc. | Semiconductor substrate support with internal channels |
| US11443921B2 (en) * | 2020-06-11 | 2022-09-13 | Applied Materials, Inc. | Radio frequency ground system and method |
| US11499223B2 (en) * | 2020-12-10 | 2022-11-15 | Applied Materials, Inc. | Continuous liner for use in a processing chamber |
| JP7705812B2 (ja) * | 2021-07-07 | 2025-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| KR102804139B1 (ko) * | 2021-07-07 | 2025-05-09 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298024A (ja) * | 1989-05-12 | 1990-12-10 | Tadahiro Omi | リアクティブイオンエッチング装置 |
| US5210466A (en) * | 1989-10-03 | 1993-05-11 | Applied Materials, Inc. | VHF/UHF reactor system |
| US5170098A (en) * | 1989-10-18 | 1992-12-08 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus for use in carrying out the same |
| JP2774367B2 (ja) * | 1990-08-07 | 1998-07-09 | 忠弘 大見 | プラズマプロセス用装置および方法 |
| US5288971A (en) * | 1991-08-09 | 1994-02-22 | Advanced Energy Industries, Inc. | System for igniting a plasma for thin film processing |
| US5688330A (en) * | 1992-05-13 | 1997-11-18 | Ohmi; Tadahiro | Process apparatus |
| JP3157638B2 (ja) | 1993-03-02 | 2001-04-16 | アネルバ株式会社 | プラズマ処理装置 |
| US5487785A (en) * | 1993-03-26 | 1996-01-30 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
| JP3090562B2 (ja) * | 1993-05-24 | 2000-09-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JPH078638A (ja) * | 1993-06-21 | 1995-01-13 | Toyomasa Okuyama | 鉄道模型の制御装置 |
| JP3173691B2 (ja) | 1993-10-04 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5815047A (en) * | 1993-10-29 | 1998-09-29 | Applied Materials, Inc. | Fast transition RF impedance matching network for plasma reactor ignition |
| JP3062393B2 (ja) * | 1994-04-28 | 2000-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
| JP2956494B2 (ja) | 1994-10-26 | 1999-10-04 | 住友金属工業株式会社 | プラズマ処理装置 |
| US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
| JPH09106899A (ja) * | 1995-10-11 | 1997-04-22 | Anelva Corp | プラズマcvd装置及び方法並びにドライエッチング装置及び方法 |
| JP3950494B2 (ja) * | 1996-05-31 | 2007-08-01 | キヤノンアネルバ株式会社 | 窒化チタン薄膜の作製方法 |
| JPH1079350A (ja) * | 1996-09-04 | 1998-03-24 | Kokusai Electric Co Ltd | プラズマ処理装置 |
| GB9620151D0 (en) * | 1996-09-27 | 1996-11-13 | Surface Tech Sys Ltd | Plasma processing apparatus |
| TW403959B (en) | 1996-11-27 | 2000-09-01 | Hitachi Ltd | Plasma treatment device |
| JPH10172792A (ja) * | 1996-12-05 | 1998-06-26 | Tokyo Electron Ltd | プラズマ処理装置 |
| US6024044A (en) * | 1997-10-09 | 2000-02-15 | Applied Komatsu Technology, Inc. | Dual frequency excitation of plasma for film deposition |
| JP3710081B2 (ja) * | 1997-11-30 | 2005-10-26 | アルプス電気株式会社 | プラズマ処理装置 |
| US6041734A (en) | 1997-12-01 | 2000-03-28 | Applied Materials, Inc. | Use of an asymmetric waveform to control ion bombardment during substrate processing |
| US6098568A (en) * | 1997-12-01 | 2000-08-08 | Applied Materials, Inc. | Mixed frequency CVD apparatus |
| JP3565311B2 (ja) * | 1997-12-17 | 2004-09-15 | アルプス電気株式会社 | プラズマ処理装置 |
| US6112697A (en) | 1998-02-19 | 2000-09-05 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods |
| KR100292411B1 (ko) * | 1998-09-25 | 2001-06-01 | 윤종용 | 반도체소자의 제조에 사용되는 플라즈마 장비 |
-
2000
- 2000-05-03 US US09/563,963 patent/US6857387B1/en not_active Expired - Fee Related
-
2001
- 2001-05-02 TW TW090110556A patent/TWI241649B/zh not_active IP Right Cessation
- 2001-05-03 SG SG200102628A patent/SG91920A1/en unknown
- 2001-05-03 KR KR1020010024071A patent/KR20010102930A/ko not_active Ceased
- 2001-05-07 JP JP2001136357A patent/JP4817528B2/ja not_active Expired - Lifetime
-
2006
- 2006-11-17 KR KR1020060113939A patent/KR20060123696A/ko not_active Withdrawn
-
2007
- 2007-11-30 KR KR1020070123727A patent/KR20070118998A/ko not_active Ceased
-
2009
- 2009-07-03 KR KR1020090060654A patent/KR100971840B1/ko not_active Expired - Lifetime
-
2010
- 2010-03-02 KR KR1020100018516A patent/KR101012407B1/ko not_active Expired - Lifetime
-
2011
- 2011-07-19 JP JP2011157868A patent/JP5600644B2/ja not_active Expired - Lifetime
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