AU2001282326A1 - An apparatus for the backside gas cooling of a wafer in a batch ion implantationsystem - Google Patents

An apparatus for the backside gas cooling of a wafer in a batch ion implantationsystem

Info

Publication number
AU2001282326A1
AU2001282326A1 AU2001282326A AU8232601A AU2001282326A1 AU 2001282326 A1 AU2001282326 A1 AU 2001282326A1 AU 2001282326 A AU2001282326 A AU 2001282326A AU 8232601 A AU8232601 A AU 8232601A AU 2001282326 A1 AU2001282326 A1 AU 2001282326A1
Authority
AU
Australia
Prior art keywords
implantationsystem
wafer
gas cooling
backside gas
batch ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001282326A
Inventor
Bryan Christopher Lagos
Robert John Mitchell
Gary Jay Rosen
Dale Keith Stone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of AU2001282326A1 publication Critical patent/AU2001282326A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
AU2001282326A 2000-09-26 2001-08-23 An apparatus for the backside gas cooling of a wafer in a batch ion implantationsystem Abandoned AU2001282326A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09670241 2000-09-26
US09/670,241 US6583428B1 (en) 2000-09-26 2000-09-26 Apparatus for the backside gas cooling of a wafer in a batch ion implantation system
PCT/GB2001/003795 WO2002027754A2 (en) 2000-09-26 2001-08-23 An apparatus for the backside gas cooling of a wafer in a batch ion implantation system

Publications (1)

Publication Number Publication Date
AU2001282326A1 true AU2001282326A1 (en) 2002-04-08

Family

ID=24689580

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001282326A Abandoned AU2001282326A1 (en) 2000-09-26 2001-08-23 An apparatus for the backside gas cooling of a wafer in a batch ion implantationsystem

Country Status (8)

Country Link
US (1) US6583428B1 (en)
EP (1) EP1320866A2 (en)
JP (1) JP2004510306A (en)
KR (1) KR20040005822A (en)
CN (1) CN1466770A (en)
AU (1) AU2001282326A1 (en)
TW (1) TW504740B (en)
WO (1) WO2002027754A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1251809C (en) 2000-10-17 2006-04-19 尼奥弗托尼克斯公司 Coating formation by reactive deposition
US7064491B2 (en) * 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
US6734439B2 (en) * 2001-10-25 2004-05-11 Allan Weed Wafer pedestal tilt mechanism and cooling system
US6695270B1 (en) * 2002-08-15 2004-02-24 Ole Falk Smed Flat panel display system
JP2006179613A (en) * 2004-12-21 2006-07-06 Rigaku Corp Magnetic fluid sealing unit for semiconductor wafer vertical heat processor
US7867403B2 (en) * 2006-06-05 2011-01-11 Jason Plumhoff Temperature control method for photolithographic substrate
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
US20080121821A1 (en) * 2006-11-27 2008-05-29 Varian Semiconductor Equipment Associates Inc. Techniques for low-temperature ion implantation
US7528392B2 (en) 2006-11-27 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for low-temperature ion implantation
US7528391B2 (en) * 2006-12-22 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for reducing contamination during ion implantation
US7559557B2 (en) * 2007-08-22 2009-07-14 Varian Semiconductor Equipment Associates, Inc. Sealing between vacuum chambers
US8149256B2 (en) * 2008-06-04 2012-04-03 Varian Semiconductor Equipment Associates, Inc. Techniques for changing temperature of a platen
US20100084117A1 (en) * 2008-10-02 2010-04-08 Fish Roger B Platen cooling mechanism for cryogenic ion implanting
US20100155026A1 (en) * 2008-12-19 2010-06-24 Walther Steven R Condensible gas cooling system
US7977652B2 (en) * 2009-09-29 2011-07-12 Varian Semiconductor Equipment Associates, Inc. Optical heater for cryogenic ion implanter surface regeneration
CN103594553B (en) * 2013-10-23 2015-10-28 中国电子科技集团公司第四十八研究所 A kind of array silicon slice loading target disc
CN107154346B (en) * 2017-05-19 2021-03-16 京东方科技集团股份有限公司 Film doping method, thin film transistor and manufacturing method thereof
CN109243954B (en) * 2018-10-12 2023-11-03 江苏晋誉达半导体股份有限公司 Ion implanter
WO2020124158A1 (en) * 2018-12-21 2020-06-25 Ozone 1 Pty Ltd Improvements in plasma reactors
US10971327B1 (en) * 2019-12-06 2021-04-06 Applied Materials, Inc. Cryogenic heat transfer system

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514636A (en) * 1979-09-14 1985-04-30 Eaton Corporation Ion treatment apparatus
US4419584A (en) 1981-07-14 1983-12-06 Eaton Semi-Conductor Implantation Corporation Treating workpiece with beams
JPS5950275A (en) 1982-09-16 1984-03-23 Rigaku Keisoku Kk Shaft sealing apparatus utilizing magnetic fluid
US5389793A (en) 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4567938A (en) * 1984-05-02 1986-02-04 Varian Associates, Inc. Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system
US4733091A (en) * 1984-09-19 1988-03-22 Applied Materials, Inc. Systems and methods for ion implantation of semiconductor wafers
JPS61264649A (en) * 1985-05-20 1986-11-22 Ulvac Corp Substrate cooling device
US4965862A (en) 1988-05-18 1990-10-23 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US4899059A (en) 1988-05-18 1990-02-06 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5641969A (en) * 1996-03-28 1997-06-24 Applied Materials, Inc. Ion implantation apparatus
US5954342A (en) 1997-04-25 1999-09-21 Mfs Technology Ltd Magnetic fluid seal apparatus for a rotary shaft
US6222196B1 (en) * 1998-11-19 2001-04-24 Axcelis Technologies, Inc. Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter
US6412289B1 (en) 2001-05-15 2002-07-02 General Electric Company Synchronous machine having cryogenic gas transfer coupling to rotor with super-conducting coils

Also Published As

Publication number Publication date
CN1466770A (en) 2004-01-07
US6583428B1 (en) 2003-06-24
KR20040005822A (en) 2004-01-16
EP1320866A2 (en) 2003-06-25
WO2002027754A2 (en) 2002-04-04
WO2002027754A3 (en) 2002-06-13
JP2004510306A (en) 2004-04-02
TW504740B (en) 2002-10-01

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