AU2002213451A1 - System, apparatus, and method for processing wafer using single frequency rf power in plasma processing chamber - Google Patents

System, apparatus, and method for processing wafer using single frequency rf power in plasma processing chamber

Info

Publication number
AU2002213451A1
AU2002213451A1 AU2002213451A AU1345102A AU2002213451A1 AU 2002213451 A1 AU2002213451 A1 AU 2002213451A1 AU 2002213451 A AU2002213451 A AU 2002213451A AU 1345102 A AU1345102 A AU 1345102A AU 2002213451 A1 AU2002213451 A1 AU 2002213451A1
Authority
AU
Australia
Prior art keywords
power
single frequency
processing chamber
plasma processing
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002213451A
Inventor
Andreas Fischer
Andras Kuthi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2002213451A1 publication Critical patent/AU2002213451A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
AU2002213451A 2000-10-06 2001-10-05 System, apparatus, and method for processing wafer using single frequency rf power in plasma processing chamber Abandoned AU2002213451A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09685051 2000-10-06
US09/685,051 US6562190B1 (en) 2000-10-06 2000-10-06 System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber
PCT/US2001/042536 WO2002029849A2 (en) 2000-10-06 2001-10-05 System, apparatus, and method for processing wafer using single frequency rf power in plasma processing chamber

Publications (1)

Publication Number Publication Date
AU2002213451A1 true AU2002213451A1 (en) 2002-04-15

Family

ID=24750587

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002213451A Abandoned AU2002213451A1 (en) 2000-10-06 2001-10-05 System, apparatus, and method for processing wafer using single frequency rf power in plasma processing chamber

Country Status (7)

Country Link
US (2) US6562190B1 (en)
EP (1) EP1323180B1 (en)
JP (1) JP5148043B2 (en)
KR (1) KR100807131B1 (en)
CN (1) CN100481342C (en)
AU (1) AU2002213451A1 (en)
WO (1) WO2002029849A2 (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6700090B2 (en) * 2002-04-26 2004-03-02 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
US6852639B2 (en) * 2002-07-31 2005-02-08 Infineon Technologies Ag Etching processing method for a material layer
US20040229990A1 (en) * 2003-05-16 2004-11-18 Lord Corporation Acrylic structural adhesive having improved T-peel strength
US7179754B2 (en) * 2003-05-28 2007-02-20 Applied Materials, Inc. Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy
US7431857B2 (en) * 2003-08-15 2008-10-07 Applied Materials, Inc. Plasma generation and control using a dual frequency RF source
US7144521B2 (en) * 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7264676B2 (en) * 2003-09-11 2007-09-04 United Microelectronics Corp. Plasma apparatus and method capable of adaptive impedance matching
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
JP2005243823A (en) * 2004-02-25 2005-09-08 Nec Electronics Corp Plasma processor, semiconductor manufacturing equipment, and electrostatic chuck member for use therein
US7193173B2 (en) * 2004-06-30 2007-03-20 Lam Research Corporation Reducing plasma ignition pressure
KR101170597B1 (en) * 2006-05-10 2012-08-02 주성엔지니어링(주) Gap-fill method using amplitude modulated RF power and gap-fill apparatus for the same
US8083961B2 (en) * 2006-07-31 2011-12-27 Tokyo Electron Limited Method and system for controlling the uniformity of a ballistic electron beam by RF modulation
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
CN101568997B (en) * 2007-07-04 2011-03-30 佳能安内华股份有限公司 Surface treatment apparatus
JP5514413B2 (en) * 2007-08-17 2014-06-04 東京エレクトロン株式会社 Plasma etching method
CN101478857A (en) * 2008-01-04 2009-07-08 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma treatment apparatus
JP5390846B2 (en) * 2008-12-09 2014-01-15 東京エレクトロン株式会社 Plasma etching apparatus and plasma cleaning method
DE102009016701A1 (en) * 2009-04-06 2010-10-14 Forschungsverbund Berlin E.V. Process chamber with modulated plasma supply
JP5955062B2 (en) * 2011-04-25 2016-07-20 東京エレクトロン株式会社 Plasma processing equipment
JP6009171B2 (en) * 2012-02-14 2016-10-19 東京エレクトロン株式会社 Substrate processing equipment
US9401263B2 (en) * 2013-09-19 2016-07-26 Globalfoundries Inc. Feature etching using varying supply of power pulses
US9589799B2 (en) * 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
KR102167603B1 (en) 2014-01-06 2020-10-19 삼성전자주식회사 Methods of forming wiring structures and methods of manufacturing semiconductor devices
US9667303B2 (en) * 2015-01-28 2017-05-30 Lam Research Corporation Dual push between a host computer system and an RF generator
JP6770868B2 (en) * 2016-10-26 2020-10-21 東京エレクトロン株式会社 Method for impedance matching of plasma processing equipment
US10720305B2 (en) 2018-12-21 2020-07-21 Advanced Energy Industries, Inc. Plasma delivery system for modulated plasma systems
US11804362B2 (en) 2018-12-21 2023-10-31 Advanced Energy Industries, Inc. Frequency tuning for modulated plasma systems
US11515123B2 (en) 2018-12-21 2022-11-29 Advanced Energy Industries, Inc. Apparatus and system for modulated plasma systems
US11837441B2 (en) 2019-05-29 2023-12-05 Lam Research Corporation Depositing a carbon hardmask by high power pulsed low frequency RF
US11170981B2 (en) 2019-09-17 2021-11-09 Tokyo Electron Limited Broadband plasma processing systems and methods
US11295937B2 (en) 2019-09-17 2022-04-05 Tokyo Electron Limited Broadband plasma processing systems and methods

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812347B2 (en) * 1981-02-09 1983-03-08 日本電信電話株式会社 plasma etching equipment
KR890004881B1 (en) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 Plasma treating method and device thereof
EP0149089B1 (en) * 1984-01-06 1989-11-23 Tegal Corporation Single electrode, multiple frequency plasma apparatus
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
JP2588388B2 (en) * 1986-08-08 1997-03-05 株式会社 半導体エネルギー研究所 Coating method
DE3733135C1 (en) * 1987-10-01 1988-09-22 Leybold Ag Device for coating or etching using a plasma
KR900013595A (en) * 1989-02-15 1990-09-06 미다 가쓰시게 Plasma Etching Method and Apparatus
JPH06338476A (en) * 1993-03-31 1994-12-06 Tokyo Electron Ltd Plasma processing method
KR100324792B1 (en) * 1993-03-31 2002-06-20 히가시 데쓰로 Plasma processing apparatus
EP0653501B1 (en) 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
JP3227949B2 (en) * 1993-11-18 2001-11-12 日新電機株式会社 Plasma processing method and apparatus
JPH09129398A (en) * 1995-10-31 1997-05-16 Kokusai Electric Co Ltd Plasma processing method and device
TW335517B (en) * 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
JP3220383B2 (en) * 1996-07-23 2001-10-22 東京エレクトロン株式会社 Plasma processing apparatus and method
JP4013271B2 (en) * 1997-01-16 2007-11-28 日新電機株式会社 Article surface treatment method and apparatus
US6126778A (en) * 1998-07-22 2000-10-03 Micron Technology, Inc. Beat frequency modulation for plasma generation
EP1131847B1 (en) * 1998-11-04 2010-02-17 Surface Technology Systems Plc A method for etching a substrate
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma

Also Published As

Publication number Publication date
CN100481342C (en) 2009-04-22
WO2002029849A3 (en) 2002-06-13
WO2002029849A2 (en) 2002-04-11
US6562190B1 (en) 2003-05-13
JP2004511097A (en) 2004-04-08
EP1323180A2 (en) 2003-07-02
EP1323180B1 (en) 2013-12-11
JP5148043B2 (en) 2013-02-20
KR100807131B1 (en) 2008-02-27
US20030207583A1 (en) 2003-11-06
KR20030051692A (en) 2003-06-25
CN1468440A (en) 2004-01-14

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