AU2001247889A1 - Apparatus and methods for actively controlling rf peak-to-peak voltage in an inductively coupled plasma etching system - Google Patents
Apparatus and methods for actively controlling rf peak-to-peak voltage in an inductively coupled plasma etching systemInfo
- Publication number
- AU2001247889A1 AU2001247889A1 AU2001247889A AU4788901A AU2001247889A1 AU 2001247889 A1 AU2001247889 A1 AU 2001247889A1 AU 2001247889 A AU2001247889 A AU 2001247889A AU 4788901 A AU4788901 A AU 4788901A AU 2001247889 A1 AU2001247889 A1 AU 2001247889A1
- Authority
- AU
- Australia
- Prior art keywords
- peak
- methods
- plasma etching
- inductively coupled
- coupled plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005530 etching Methods 0.000 title 1
- 238000009616 inductively coupled plasma Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000099728 | 2000-03-31 | ||
JP2000-99728 | 2000-03-31 | ||
US09608883 | 2000-06-30 | ||
US09/608,883 US6531030B1 (en) | 2000-03-31 | 2000-06-30 | Inductively coupled plasma etching apparatus |
US09/676,462 US6422173B1 (en) | 2000-06-30 | 2000-09-29 | Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system |
US09676462 | 2000-09-29 | ||
PCT/US2001/010183 WO2001075930A2 (en) | 2000-03-31 | 2001-03-28 | Apparatus and methods for actively controlling rf peak-to-peak voltage in an inductively coupled plasma etching system |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001247889A1 true AU2001247889A1 (en) | 2001-10-15 |
Family
ID=27342948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001247889A Abandoned AU2001247889A1 (en) | 2000-03-31 | 2001-03-28 | Apparatus and methods for actively controlling rf peak-to-peak voltage in an inductively coupled plasma etching system |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1269512B1 (en) |
KR (1) | KR100801044B1 (en) |
CN (1) | CN1230042C (en) |
AU (1) | AU2001247889A1 (en) |
DE (1) | DE60130744T2 (en) |
TW (1) | TW534928B (en) |
WO (1) | WO2001075930A2 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100452920B1 (en) * | 2002-07-19 | 2004-10-14 | 한국디엔에스 주식회사 | Inductive coupled plasma etching apparatus |
KR20060073737A (en) * | 2004-12-24 | 2006-06-29 | 삼성전자주식회사 | Plasma apparatus |
US7353771B2 (en) * | 2005-11-07 | 2008-04-08 | Mks Instruments, Inc. | Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator |
EP2053631A1 (en) * | 2007-10-22 | 2009-04-29 | Industrial Plasma Services & Technologies - IPST GmbH | Method and device for plasma treatment of moving substrates |
CN102820286A (en) * | 2012-07-16 | 2012-12-12 | 昆山华太电子技术有限公司 | Structure for improving performance of passive device of power integrated circuit |
CN104183451A (en) * | 2013-05-22 | 2014-12-03 | 中微半导体设备(上海)有限公司 | Faraday shield device capable of realizing rapid heat radiation and plasma processing device |
CN104576278B (en) * | 2013-10-10 | 2017-05-10 | 中微半导体设备(上海)有限公司 | Faraday shield plate and plasma treatment system using Faraday shield plate |
US20170278680A1 (en) * | 2016-03-28 | 2017-09-28 | Lam Research Corporation | Substrate processing system including coil with rf powered faraday shield |
JP6715129B2 (en) * | 2016-08-31 | 2020-07-01 | 東京エレクトロン株式会社 | Plasma processing device |
KR101848908B1 (en) * | 2016-09-19 | 2018-05-15 | 인베니아 주식회사 | Inductively coupled plasma processing apparatus |
US10734195B2 (en) * | 2017-06-08 | 2020-08-04 | Lam Research Corporation | Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching |
CN110875168B (en) * | 2018-08-31 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma processing equipment |
CN110491759A (en) * | 2019-08-21 | 2019-11-22 | 江苏鲁汶仪器有限公司 | A kind of plasma etching system |
CN110491760B (en) * | 2019-08-23 | 2020-09-15 | 江苏鲁汶仪器有限公司 | Faraday cleaning device and plasma processing system |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5540800A (en) * | 1994-06-23 | 1996-07-30 | Applied Materials, Inc. | Inductively coupled high density plasma reactor for plasma assisted materials processing |
US5650032A (en) * | 1995-06-06 | 1997-07-22 | International Business Machines Corporation | Apparatus for producing an inductive plasma for plasma processes |
JP4119547B2 (en) * | 1997-10-20 | 2008-07-16 | 東京エレクトロンAt株式会社 | Plasma processing equipment |
US6280563B1 (en) * | 1997-12-31 | 2001-08-28 | Lam Research Corporation | Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma |
US6097157A (en) * | 1998-04-09 | 2000-08-01 | Board Of Regents, The University Of Texas System | System for ion energy control during plasma processing |
-
2001
- 2001-03-28 CN CNB018076726A patent/CN1230042C/en not_active Expired - Lifetime
- 2001-03-28 AU AU2001247889A patent/AU2001247889A1/en not_active Abandoned
- 2001-03-28 EP EP01920881A patent/EP1269512B1/en not_active Expired - Lifetime
- 2001-03-28 TW TW090107442A patent/TW534928B/en not_active IP Right Cessation
- 2001-03-28 KR KR1020027012893A patent/KR100801044B1/en active IP Right Grant
- 2001-03-28 DE DE60130744T patent/DE60130744T2/en not_active Expired - Lifetime
- 2001-03-28 WO PCT/US2001/010183 patent/WO2001075930A2/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO2001075930A2 (en) | 2001-10-11 |
CN1230042C (en) | 2005-11-30 |
EP1269512B1 (en) | 2007-10-03 |
DE60130744D1 (en) | 2007-11-15 |
KR20030012856A (en) | 2003-02-12 |
KR100801044B1 (en) | 2008-02-04 |
EP1269512A2 (en) | 2003-01-02 |
TW534928B (en) | 2003-06-01 |
WO2001075930A3 (en) | 2002-05-23 |
DE60130744T2 (en) | 2008-07-17 |
CN1422434A (en) | 2003-06-04 |
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