CN104183451A - Faraday shield device capable of realizing rapid heat radiation and plasma processing device - Google Patents
Faraday shield device capable of realizing rapid heat radiation and plasma processing device Download PDFInfo
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- CN104183451A CN104183451A CN201310193642.3A CN201310193642A CN104183451A CN 104183451 A CN104183451 A CN 104183451A CN 201310193642 A CN201310193642 A CN 201310193642A CN 104183451 A CN104183451 A CN 104183451A
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- shielding apparatus
- screen shielding
- faraday screen
- dielectric window
- faraday
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Abstract
The invention discloses a Faraday shield device capable of realizing rapid heat radiation and a plasma processing device. By coating the metal Faraday shield device to the surface, close to radio-frequency coils, of a dielectric window above a plasma reaction cavity, the technical problems that a conventional Faraday shield device and the dielectric window are not tightly fit since the conventional Faraday shield device deforms due to heating, and heat of the dielectric window cannot be dissipated out of the reaction cavity quickly are solved. Through adopting the method of spraying and evaporating and the like, the Faraday shield device and the dielectric window are allowed to be attached tightly; and meanwhile, the surface or the inner side of the Faraday shield device is provided with heat-conductive components, so that the temperature of the plasma reaction cavity can be reduced quickly, and stability and uniformity of the plasma processing process are realized.
Description
Technical field
The present invention relates to plasma-treating technology equipment, more particularly, relate to a kind of faraday screen shielding apparatus.
Background technology
Utilize radio frequency inductive formula coupled plasma to carry out etching or deposition is to prepare a kind of critical process of semiconductor film membrane module, comprise that the preparation of various microelectronic components, film photovoltaic cell, light-emitting diode etc. all be unable to do without etching or depositing operation.The basic process of plasma etching or deposition is: reacting gas is introduced to reaction chamber from source of the gas, ionize and be decomposed to form ion and free radical in plasma.These particles dependence gas transport with height reactivity arrive body surface to be processed and carry out surface reaction.
The surface etch of carrying out in plasma or the uniformity of deposition reaction, directly related with the uniformity of plasma.And the uniformity of plasma depends on the uniformity of the Energy Coupling being undertaken by radio-frequency coil and the size of reaction chamber and shape.The Energy Coupling being undertaken by radio-frequency coil generally comprises AC and DC two parts, and AC portion is for generation of plasma, and direct current component is for increasing the bombarding energy on ion pair reaction chamber surface.Because the bombardment on ion pair reaction chamber surface can cause surperficial corrosion, must be reduced.The main application of faraday screen shielding apparatus of the prior art is the Energy Coupling that reduces or eliminates direct current component.
In prior art, described faraday screen shielding apparatus is generally a metallic plate with radio-frequency channel, and it is placed on above dielectric window, with dielectric window laminating, is convenient to take away the heat at dielectric window place.Carry out in process at etching technics, because plasm reaction cavity temperature is higher, in Faraday shield device busy, temperature raises, and deforms, can not be well and dielectric window fit, cause heat can not pass in time outside; The rising of Faraday shield unit temp can have influence on its shield effectiveness producing, and reaction process is caused to interference.The present invention is desirable to provide a kind of faraday screen shielding apparatus with quick conductive function and solves this problem.
Summary of the invention
The object of the present invention is to provide a kind of faraday screen shielding apparatus of realizing quick heat radiating, described faraday screen shielding apparatus is for an inductively coupled plasma treatment system, described plasma process system comprises at least one reaction chamber, described reaction chamber comprises a dielectric window, described dielectric window top is provided with radio-frequency coil, described dielectric window and described faraday screen shielding apparatus are wholely set, and described faraday screen shielding apparatus is coated in the surface of described dielectric window near described radio-frequency coil.
Preferably, described faraday screen shielding apparatus is wholely set by spraying or evaporation and described dielectric window.
Preferably, on described faraday screen shielding apparatus, be provided with at least one radio-frequency channel, reaction chamber inside can be coupled to by described radio-frequency channel in the magnetic field being produced by radio-frequency coil.
Preferably, the shape of described radio-frequency channel comprises at least one radial slot, and described radial slot is uniformly distributed on described faraday screen shielding apparatus with identical radial angle interval.
Preferably, described radial slot comprises the first length and the second length, and described the first length radial slot and the second length radial slot interval arrange.
Preferably, described radio-frequency coil top arranges a fan.
Preferably, described Faraday shield apparatus surface arranges a conducting-heat elements, in described conducting-heat elements, cooling fluid is housed, and described conducting-heat elements at least comprises an input interface and an output interface, for input and output cooling fluid.
Preferably, described conducting-heat elements is a heat pipe, and described heat pipe is flaabellum shape at described Faraday shield apparatus surface and is uniformly distributed.
Preferably, described Faraday shield device materials is metal material, and described dielectric window is ceramic material.
Further, the invention also discloses a kind of plasma process system, described plasma process system comprises that at least one pair of processed substrate carries out etched reaction chamber, described reaction chamber comprises a dielectric window, and described dielectric window top arranges an above-described faraday screen shielding apparatus.
The invention has the advantages that: by the surface metallization faraday screen shielding apparatus near radio-frequency coil by the dielectric window of plasm reaction cavity top, that has avoided traditional tabular faraday screen shielding apparatus to be heated deforming causing is not tight with dielectric window laminating, can not rapidly the heat of dielectric window be sent to the technical problem of reaction chamber outside, spray or the method such as evaporation by employing, together with faraday screen shielding apparatus is fitted tightly with dielectric window, at Faraday shield apparatus surface, conducting-heat elements is set simultaneously, the temperature of fast reducing plasm reaction cavity, realize the stable and even of plasma processes.
Brief description of the drawings
Fig. 1 is plasma-treating technology of the present invention reaction chamber structural representation used;
Fig. 2 is faraday screen shielding apparatus cross-sectional view of the present invention;
Fig. 3 is faraday screen shielding apparatus cross-sectional view described in another embodiment of the present invention;
Fig. 4 is faraday screen shielding apparatus cross-sectional view described in another embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
As shown in Figure 1, plasma-treating technology carries out in reaction chamber 101, and reacting gas particulate ionizes and be decomposed to form plasma and free radical, finally acts on the substrate 103 of placing reaction chamber bottom.Reaction chamber 101 tops are provided with radio-frequency coil 120, reaction chamber 101 tops have a dielectric window 102, between dielectric window 102 and radio-frequency coil 120, be provided with faraday screen shielding apparatus 110, radio-frequency coil 120, faraday screen shielding apparatus 110 and dielectric window 102 are in a parallel set substantially; Radio-frequency coil 120 is electrically connected via a tap 122 with faraday screen shielding apparatus 110.Reacting gas is flowed through reaction chamber 101 to gas discharge outlet (accompanying drawing is not shown) from gas introduction port (accompanying drawing is not shown), and then radio-frequency power is applied to radio-frequency coil 120 by power supply, and generate an electromagnetic field around radio-frequency coil 120; On faraday screen shielding apparatus 110, be provided with at least one radio-frequency channel, reaction chamber inside can be coupled to by described radio-frequency channel in the magnetic field being produced by radio-frequency coil 120.Electromagnetic field, at the interior generation induced current of reaction chamber 101, acts on reacting gas and produces plasma.
Faraday screen shielding apparatus 110 described in the present invention is wholely set with dielectric window 102, it is coated in the surface of dielectric window 102 near radio-frequency coil 120 by methods such as thermal spraying, silk-screen and evaporations, make faraday screen shielding apparatus 110 can be completely and dielectric window 102 be fitted in one, solved not tight with dielectric window laminating that in prior art, the temperature distortion of Faraday shield plate causes, the heat of dielectric window can not pass to outside technical problem in time.In order to make faraday screen shielding apparatus 110 have good thermal conductivity, the material of selecting is the metal materials such as aluminium, aluminium alloy, copper, copper alloy.Radio-frequency coil 120 tops arrange an electric fan 150, for reducing the temperature of dielectric window.
Fig. 2 illustrates faraday screen shielding apparatus cross-sectional view of the present invention, in the present embodiment, described radio-frequency channel is on faraday screen shielding apparatus, to connect many radial slots 112 that arrange, radial slot 112 is around metallic plate 111, some radial slots 112 are distributed on faraday screen shielding apparatus evenly and at intervals with identical radial angle, because faraday screen shielding apparatus of the present invention is by thermal spraying, the method such as silk-screen and evaporation is coated in dielectric window 102 upper surfaces, for uniform radial slot 112 is set, in the time that dielectric window upper surface applies faraday's screening arrangement, the position that need to make radial slot can be arranged to mask layer.
In order to improve the distribution density of described radial slot on faraday screen shielding apparatus, Fig. 3 illustrates the Faraday shield apparatus structure schematic diagram described in another embodiment of the present invention, in the present embodiment, faraday screen shielding apparatus comprises the first length radial slot 212 and the second length radial slot 213, the first length radial slot 212 and the second length radial slot 213 intervals arrange, and the first length radial slot 212 length are greater than the second length radial slot 213 length.Because faraday screen shielding apparatus of the present invention is roughly circle, meanwhile, because described radial slot has identical radial angle, cause close circular faraday screen shielding apparatus center position radio-frequency channel density larger, edge's radio-frequency channel density is less.The present embodiment, by two groups of radial slots that length is different are set, is evenly distributed radio-frequency channel on faraday screen shielding apparatus.
Fig. 4 illustrates Faraday shield apparatus structure schematic diagram described in another embodiment of the present invention, on faraday screen shielding apparatus of the present invention, connect many radial slots 312 are set, radial slot 312 is around metallic plate 311, in metallic plate 311 surfaces, conducting-heat elements 313 is set, conducting-heat elements 313 is affixed with metallic plate 311, in conducting-heat elements 313, cooling fluid is housed, conducting-heat elements 313 at least comprises an input interface 314 and an output interface 315, for input and output cooling fluid.Described cooling fluid shifts heat by the heat transmission of described conducting-heat elements 313 from faraday screen shielding apparatus.Concrete, described conducting-heat elements 313 is a heat pipe, described heat pipe 313 is flaabellum shape and arranges on metallic plate 311 surfaces, and described heat pipe 313 is distributed on the surface of metallic plate 311 equably, it can make temperature Transmit evenly on described faraday screen shielding apparatus to described heat pipe 313, avoids causing the temperature equalization of described faraday screen shielding apparatus and the high situation of local temperature.Further, in different variation examples, the layout shape of described heat pipe 313 can be also different.By the technical scheme described in employing the present embodiment, can reduce fast the temperature of faraday screen shielding apparatus and below dielectric window thereof, ensure the uniform and stable of etching technics.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1. realize the faraday screen shielding apparatus of quick heat radiating for one kind, described faraday screen shielding apparatus is for an inductively coupled plasma treatment system, described plasma process system comprises at least one reaction chamber, described reaction chamber comprises a dielectric window, described dielectric window top is provided with radio-frequency coil, it is characterized in that, described dielectric window and described faraday screen shielding apparatus are wholely set, and described faraday screen shielding apparatus is coated in the surface of described dielectric window near described radio-frequency coil.
2. faraday screen shielding apparatus according to claim 1, is characterized in that: described faraday screen shielding apparatus is wholely set by spraying or evaporation and described dielectric window.
3. faraday screen shielding apparatus according to claim 1, is characterized in that: on described faraday screen shielding apparatus, be provided with at least one radio-frequency channel, reaction chamber inside can be coupled to by described radio-frequency channel in the magnetic field being produced by radio-frequency coil.
4. faraday screen shielding apparatus according to claim 1, is characterized in that: the shape of described radio-frequency channel comprises at least one radial slot, described radial slot is uniformly distributed on described faraday screen shielding apparatus with identical radial angle interval.
5. faraday screen shielding apparatus according to claim 4, is characterized in that: described radial slot comprises the first length and the second length, and described the first length radial slot and the second length radial slot interval arrange.
6. faraday screen shielding apparatus according to claim 1, is characterized in that: described radio-frequency coil top arranges a fan.
7. faraday screen shielding apparatus according to claim 1, it is characterized in that: described Faraday shield apparatus surface arranges a conducting-heat elements, in described conducting-heat elements, cooling fluid is housed, described conducting-heat elements at least comprises an input interface and an output interface, for input and output cooling fluid.
8. faraday screen shielding apparatus as claimed in claim 7, is characterized in that, described conducting-heat elements is a heat pipe, and described heat pipe is flaabellum shape at described Faraday shield apparatus surface and is uniformly distributed.
9. according to faraday screen shielding apparatus described in the arbitrary claim of claim 1-8, it is characterized in that: described Faraday shield device materials is metal material, described dielectric window is ceramic material.
10. a plasma processing apparatus, it is characterized in that, described plasma processing apparatus comprises processed substrate is carried out to etched reative cell, described reative cell top arranges a dielectric window, and described dielectric window top arranges one according to the faraday screen shielding apparatus described in any one in claim 1 to 8.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310193642.3A CN104183451A (en) | 2013-05-22 | 2013-05-22 | Faraday shield device capable of realizing rapid heat radiation and plasma processing device |
| TW103111036A TW201445612A (en) | 2013-05-22 | 2014-03-25 | Faraday shield device capable of rapidly dissipating heat and plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310193642.3A CN104183451A (en) | 2013-05-22 | 2013-05-22 | Faraday shield device capable of realizing rapid heat radiation and plasma processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104183451A true CN104183451A (en) | 2014-12-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310193642.3A Pending CN104183451A (en) | 2013-05-22 | 2013-05-22 | Faraday shield device capable of realizing rapid heat radiation and plasma processing device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104183451A (en) |
| TW (1) | TW201445612A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106686875A (en) * | 2015-11-06 | 2017-05-17 | 中微半导体设备(上海)有限公司 | Inductive coupling plasma processing apparatus |
| CN106772160A (en) * | 2017-03-13 | 2017-05-31 | 上海纽迈电子科技有限公司 | high temperature radio frequency coil with cooling structure |
| CN108091586A (en) * | 2016-11-21 | 2018-05-29 | 中微半导体设备(上海)有限公司 | Plasma processor platform and its radio frequency window temperature control system and temprature control method |
| TWI646866B (en) * | 2016-11-01 | 2019-01-01 | 大陸商中微半導體設備（上海）有限公司 | Plasma processing device |
| CN113113280A (en) * | 2020-01-09 | 2021-07-13 | 江苏鲁汶仪器有限公司 | Plasma processing system with an open-close faraday assembly and open-close faraday assembly thereof |
| WO2022267371A1 (en) * | 2021-06-23 | 2022-12-29 | 北京鲁汶半导体科技有限公司 | Excitation radio-frequency system of plasma etching machine |
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| CN1422434A (en) * | 2000-03-31 | 2003-06-04 | 拉姆研究公司 | Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system |
| CN2907173Y (en) * | 2006-02-24 | 2007-05-30 | 苏州大学 | Large-area parallel connected high density inductively coupled plasma source |
| CN101390187A (en) * | 2006-01-24 | 2009-03-18 | 瓦里安半导体设备公司 | Plasma immersion ion source with low effective antenna voltage |
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| JP2003033647A (en) * | 2001-07-23 | 2003-02-04 | Tokyo Ohka Kogyo Co Ltd | Plasma treatment device |
| JP2006049817A (en) * | 2004-07-07 | 2006-02-16 | Showa Denko Kk | Plasma treatment method and plasma etching method |
| CN102915902B (en) * | 2011-08-02 | 2015-11-25 | 中微半导体设备(上海)有限公司 | A kind of plasma processing apparatus of capacitance coupling type and substrate processing method thereof |
| CN202871737U (en) * | 2012-05-28 | 2013-04-10 | 中微半导体设备(上海)有限公司 | Plasma treatment apparatus and Faraday shielding device included by same |
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2013
- 2013-05-22 CN CN201310193642.3A patent/CN104183451A/en active Pending
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5364488A (en) * | 1991-09-30 | 1994-11-15 | Tokyo Ohka Kogyo Co., Ltd. | Coaxial plasma processing apparatus |
| CN1422434A (en) * | 2000-03-31 | 2003-06-04 | 拉姆研究公司 | Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system |
| CN101390187A (en) * | 2006-01-24 | 2009-03-18 | 瓦里安半导体设备公司 | Plasma immersion ion source with low effective antenna voltage |
| CN2907173Y (en) * | 2006-02-24 | 2007-05-30 | 苏州大学 | Large-area parallel connected high density inductively coupled plasma source |
| CN102332384A (en) * | 2011-09-26 | 2012-01-25 | 中国科学院微电子研究所 | Device and method for generating neutral particle beams |
| CN202616187U (en) * | 2012-05-15 | 2012-12-19 | 中微半导体设备(上海)有限公司 | Faraday shielding device with cooling function and plasma processing equipment |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106686875A (en) * | 2015-11-06 | 2017-05-17 | 中微半导体设备(上海)有限公司 | Inductive coupling plasma processing apparatus |
| CN106686875B (en) * | 2015-11-06 | 2019-05-17 | 中微半导体设备(上海)股份有限公司 | A kind of device for inductively coupled plasma processing |
| TWI646866B (en) * | 2016-11-01 | 2019-01-01 | 大陸商中微半導體設備（上海）有限公司 | Plasma processing device |
| CN108091586A (en) * | 2016-11-21 | 2018-05-29 | 中微半导体设备(上海)有限公司 | Plasma processor platform and its radio frequency window temperature control system and temprature control method |
| CN106772160A (en) * | 2017-03-13 | 2017-05-31 | 上海纽迈电子科技有限公司 | high temperature radio frequency coil with cooling structure |
| CN106772160B (en) * | 2017-03-13 | 2023-04-18 | 上海纽迈电子科技有限公司 | High-temperature radio frequency coil with cooling structure |
| CN113113280A (en) * | 2020-01-09 | 2021-07-13 | 江苏鲁汶仪器有限公司 | Plasma processing system with an open-close faraday assembly and open-close faraday assembly thereof |
| CN113113280B (en) * | 2020-01-09 | 2022-06-10 | 江苏鲁汶仪器有限公司 | Plasma processing system and opening and closing Faraday component thereof |
| WO2022267371A1 (en) * | 2021-06-23 | 2022-12-29 | 北京鲁汶半导体科技有限公司 | Excitation radio-frequency system of plasma etching machine |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201445612A (en) | 2014-12-01 |
| TWI496186B (en) | 2015-08-11 |
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Application publication date: 20141203 |
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