AU2001270163A1 - Vacuum plasma processor apparatus and method - Google Patents

Vacuum plasma processor apparatus and method

Info

Publication number
AU2001270163A1
AU2001270163A1 AU2001270163A AU7016301A AU2001270163A1 AU 2001270163 A1 AU2001270163 A1 AU 2001270163A1 AU 2001270163 A AU2001270163 A AU 2001270163A AU 7016301 A AU7016301 A AU 7016301A AU 2001270163 A1 AU2001270163 A1 AU 2001270163A1
Authority
AU
Australia
Prior art keywords
vacuum plasma
processor apparatus
plasma processor
vacuum
processor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001270163A
Inventor
Tom Choi
Frank Y. Lin
Tuqiang Ni
Kenji Takeshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2001270163A1 publication Critical patent/AU2001270163A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
AU2001270163A 2000-06-30 2001-06-26 Vacuum plasma processor apparatus and method Abandoned AU2001270163A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/607,326 US6531029B1 (en) 2000-06-30 2000-06-30 Vacuum plasma processor apparatus and method
US09/607,326 2000-06-30
PCT/US2001/020263 WO2002003763A2 (en) 2000-06-30 2001-06-26 Vacuum plasma processor apparatus and method

Publications (1)

Publication Number Publication Date
AU2001270163A1 true AU2001270163A1 (en) 2002-01-14

Family

ID=24431792

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001270163A Abandoned AU2001270163A1 (en) 2000-06-30 2001-06-26 Vacuum plasma processor apparatus and method

Country Status (8)

Country Link
US (2) US6531029B1 (en)
EP (1) EP1300057B1 (en)
JP (2) JP5116203B2 (en)
KR (2) KR100881882B1 (en)
AU (1) AU2001270163A1 (en)
DE (1) DE60128229T2 (en)
TW (1) TW515005B (en)
WO (1) WO2002003763A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
US6876155B2 (en) * 2002-12-31 2005-04-05 Lam Research Corporation Plasma processor apparatus and method, and antenna
KR100964398B1 (en) * 2003-01-03 2010-06-17 삼성전자주식회사 Inductively coupled antenna and plasma processing apparatus using the same
US20040261718A1 (en) * 2003-06-26 2004-12-30 Kim Nam Hun Plasma source coil for generating plasma and plasma chamber using the same
US7713432B2 (en) * 2004-10-04 2010-05-11 David Johnson Method and apparatus to improve plasma etch uniformity
US20080003377A1 (en) * 2006-06-30 2008-01-03 The Board Of Regents Of The Nevada System Of Higher Ed. On Behalf Of The Unlv Transparent vacuum system
DE102008024014A1 (en) * 2008-05-16 2010-04-15 Ofa Bamberg Gmbh Device for detecting washing process of clothing item or bandage, comprises data processing unit, which detects whether clothing item or bandage is washed based on signal of optical sensor or transponder, display, and water-tight housing
US20120103524A1 (en) * 2010-10-28 2012-05-03 Applied Materials, Inc. Plasma processing apparatus with reduced effects of process chamber asymmetry
US20120152900A1 (en) * 2010-12-20 2012-06-21 Applied Materials, Inc. Methods and apparatus for gas delivery into plasma processing chambers
US10777387B2 (en) * 2012-09-28 2020-09-15 Semes Co., Ltd. Apparatus for treating substrate
CN109036817B (en) * 2017-06-08 2021-09-17 北京北方华创微电子装备有限公司 Inductive coupling coil and process chamber
JP6909824B2 (en) * 2019-05-17 2021-07-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing equipment, semiconductor equipment manufacturing methods and programs
KR20220107521A (en) * 2021-01-25 2022-08-02 (주) 엔피홀딩스 Reactor, process processing apparatus including the same and method for manufacturing reactor

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5401350A (en) 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5919382A (en) * 1994-10-31 1999-07-06 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US5838111A (en) 1996-02-27 1998-11-17 Matsushita Electric Industrial Co., Ltd. Plasma generator with antennas attached to top electrodes
US5759280A (en) 1996-06-10 1998-06-02 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US6268700B1 (en) * 1996-06-10 2001-07-31 Lam Research Corporation Vacuum plasma processor having coil with intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil
US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
CA2207154A1 (en) 1996-06-10 1997-12-10 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
JP3658922B2 (en) 1997-05-22 2005-06-15 松下電器産業株式会社 Plasma processing method and apparatus
US6077385A (en) * 1997-04-08 2000-06-20 Ebara Corporation Polishing apparatus
US6028285A (en) 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
JP2972707B1 (en) * 1998-02-26 1999-11-08 松下電子工業株式会社 Plasma etching apparatus and plasma etching method
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
KR100291898B1 (en) * 1999-04-09 2001-06-01 윤종용 Method of making shield and plasma etching apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US6319355B1 (en) * 1999-06-30 2001-11-20 Lam Research Corporation Plasma processor with coil responsive to variable amplitude rf envelope
US6143144A (en) * 1999-07-30 2000-11-07 Tokyo Electronlimited Method for etch rate enhancement by background oxygen control in a soft etch system

Also Published As

Publication number Publication date
WO2002003763A3 (en) 2002-12-27
US20030106645A1 (en) 2003-06-12
WO2002003763A8 (en) 2002-04-04
KR100807143B1 (en) 2008-02-27
WO2002003763B1 (en) 2003-03-13
JP2012033958A (en) 2012-02-16
KR100881882B1 (en) 2009-02-06
JP5538340B2 (en) 2014-07-02
JP5116203B2 (en) 2013-01-09
US6897156B2 (en) 2005-05-24
EP1300057A2 (en) 2003-04-09
KR20070074672A (en) 2007-07-12
JP2004520704A (en) 2004-07-08
WO2002003763A2 (en) 2002-01-10
EP1300057B1 (en) 2007-05-02
KR20030034108A (en) 2003-05-01
US6531029B1 (en) 2003-03-11
TW515005B (en) 2002-12-21
DE60128229T2 (en) 2007-08-30
DE60128229D1 (en) 2007-06-14

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