AU2002222639A1 - Processing method and processing apparatus - Google Patents

Processing method and processing apparatus

Info

Publication number
AU2002222639A1
AU2002222639A1 AU2002222639A AU2263902A AU2002222639A1 AU 2002222639 A1 AU2002222639 A1 AU 2002222639A1 AU 2002222639 A AU2002222639 A AU 2002222639A AU 2263902 A AU2263902 A AU 2263902A AU 2002222639 A1 AU2002222639 A1 AU 2002222639A1
Authority
AU
Australia
Prior art keywords
processing
processing apparatus
processing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002222639A
Inventor
Susumu Arima
Yumiko Kawano
Yasuhiko Kojima
Hideaki Yamasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2002222639A1 publication Critical patent/AU2002222639A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
AU2002222639A 2000-12-15 2001-12-14 Processing method and processing apparatus Abandoned AU2002222639A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-382201 2000-12-15
JP2000382201A JP4583591B2 (en) 2000-12-15 2000-12-15 Processing method and processing apparatus
PCT/JP2001/010959 WO2002049098A1 (en) 2000-12-15 2001-12-14 Processing method and processing apparatus

Publications (1)

Publication Number Publication Date
AU2002222639A1 true AU2002222639A1 (en) 2002-06-24

Family

ID=18850071

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002222639A Abandoned AU2002222639A1 (en) 2000-12-15 2001-12-14 Processing method and processing apparatus

Country Status (6)

Country Link
US (1) US20040060513A1 (en)
JP (1) JP4583591B2 (en)
KR (2) KR100811906B1 (en)
CN (1) CN100369230C (en)
AU (1) AU2002222639A1 (en)
WO (1) WO2002049098A1 (en)

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DE10320597A1 (en) * 2003-04-30 2004-12-02 Aixtron Ag Method and device for depositing semiconductor layers with two process gases, one of which is preconditioned
US7572340B2 (en) * 2004-11-29 2009-08-11 Applied Materials, Inc. High resolution substrate holder leveling device and method
US7789963B2 (en) * 2005-02-25 2010-09-07 Tokyo Electron Limited Chuck pedestal shield
JP4336320B2 (en) * 2005-02-25 2009-09-30 キヤノンアネルバ株式会社 Wafer holder
JP5080043B2 (en) * 2006-08-31 2012-11-21 新電元工業株式会社 Semiconductor device manufacturing method, semiconductor device manufacturing jig, and semiconductor device manufacturing apparatus
JP4945391B2 (en) * 2007-09-19 2012-06-06 東京エレクトロン株式会社 Heat treatment equipment
CN101492810B (en) * 2008-01-25 2011-04-06 中芯国际集成电路制造(上海)有限公司 Wafer support assembly
KR100856019B1 (en) * 2008-02-22 2008-09-02 (주)타이닉스 Wafer chucking apparatus for plasma process
KR101020075B1 (en) 2008-05-06 2011-03-09 주식회사 뉴파워 프라즈마 Inductively coupled plasma reactor
CN101591771B (en) * 2008-05-30 2011-03-16 财团法人工业技术研究院 Device for positioning and supporting base of vacuum equipment
JP2010225740A (en) * 2009-03-23 2010-10-07 Tokyo Electron Ltd Substrate processing method, and substrate processing apparatus
KR101245769B1 (en) * 2009-07-28 2013-03-20 엘아이지에이디피 주식회사 Chemical vapor deposition device, guide member for the chemical vapor deposition device and method for manufacturing thin film using the chemical vapor deposition device
CN101812676B (en) * 2010-05-05 2012-07-25 江苏综艺光伏有限公司 Processing chamber used for semiconductor solar film plating
KR20120043636A (en) * 2010-10-26 2012-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Plasma treatment apparatus and plasma cvd apparatus
WO2012077071A1 (en) * 2010-12-08 2012-06-14 Oc Oerlikon Balzers Ag Apparatus and method for depositing a layer onto a substrate
CN103668101B (en) * 2012-09-21 2015-12-16 无锡华润华晶微电子有限公司 Be deposited as the wafer mounting apparatus used in film device
CN103008168B (en) * 2012-12-12 2015-06-03 深圳先进技术研究院 Device and method for depositing film
CN105609459B (en) * 2014-11-14 2020-01-03 北京北方华创微电子装备有限公司 Substrate fixing method and device and semiconductor processing equipment
WO2017059645A1 (en) * 2015-10-09 2017-04-13 北京北方微电子基地设备工艺研究中心有限责任公司 Heating device and heating chamber
CN105470176B (en) * 2015-12-31 2018-08-10 北京北方华创微电子装备有限公司 Semiconductor film-forming apparatus, substrate automatic positioning clamping structure and method for chucking
CN105448785B (en) * 2015-12-31 2018-12-18 北京北方华创微电子装备有限公司 Semiconductor film-forming apparatus, wafer automatic positioning clamping structure and method for chucking
US9972514B2 (en) * 2016-03-07 2018-05-15 Lam Research Ag Apparatus for liquid treatment of wafer shaped articles
CN107699890B (en) * 2017-09-27 2020-01-03 武汉华星光电技术有限公司 Coating machine fixture and coating machine
JP7109211B2 (en) * 2018-03-06 2022-07-29 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment
CN108754458B (en) * 2018-05-23 2020-10-16 上海华力微电子有限公司 Chemical vapor deposition machine and alarm method for processing machine
US11232971B2 (en) * 2019-12-18 2022-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Workpiece holding mechanism, process system and manufacturing method of semiconductor structure

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JPH0345634U (en) * 1989-09-11 1991-04-26
JP2532401Y2 (en) * 1991-04-16 1997-04-16 ソニー株式会社 Bias ECR plasma CVD equipment
JPH0574919A (en) * 1991-09-12 1993-03-26 Nec Corp Plasma processor
JP3024940B2 (en) * 1992-06-24 2000-03-27 アネルバ株式会社 Substrate processing method and CVD processing method
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
US5292554A (en) * 1992-11-12 1994-03-08 Applied Materials, Inc. Deposition apparatus using a perforated pumping plate
JPH0766125A (en) * 1993-08-30 1995-03-10 Sony Corp Reduced pressure processing system
US5476548A (en) * 1994-06-20 1995-12-19 Applied Materials, Inc. Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring
KR970007611B1 (en) * 1994-06-22 1997-05-13 삼성전자 주식회사 Radio system
JP3477953B2 (en) * 1995-10-18 2003-12-10 東京エレクトロン株式会社 Heat treatment equipment
JPH09260469A (en) * 1996-03-19 1997-10-03 Fujitsu Ltd Vacuum treatment device
JPH11330214A (en) * 1998-05-19 1999-11-30 Shinko Electric Ind Co Ltd Heating device and guide ring used the device
JP4317608B2 (en) * 1999-01-18 2009-08-19 東京エレクトロン株式会社 Deposition equipment
US6228563B1 (en) * 1999-09-17 2001-05-08 Gasonics International Corporation Method and apparatus for removing post-etch residues and other adherent matrices

Also Published As

Publication number Publication date
KR20070092764A (en) 2007-09-13
KR20030061851A (en) 2003-07-22
CN1481582A (en) 2004-03-10
JP2002184846A (en) 2002-06-28
WO2002049098A1 (en) 2002-06-20
KR100788056B1 (en) 2007-12-21
JP4583591B2 (en) 2010-11-17
US20040060513A1 (en) 2004-04-01
CN100369230C (en) 2008-02-13
KR100811906B1 (en) 2008-03-10

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