JPH09260469A - Vacuum treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the separation of deposit from a member where a temperature difference at the time of treatment and at the time of standby possibly occurs by giving the metal of low melting point, which is arranged between a heating member and a member to be heated, has a melting point higher than a target temperature and thermally connects both materials. SOLUTION: A substrate holding stage 4 is descended to a standby position, a clamp 9 descends with the substrate holding stage 4 and a clamp holding member 12 holds it. At that time, desired current is made to flow in a heater wire 14, the metal of low melting point 16 is heated to the prescribed temperature which is more than the melting point and melt is formed. Since a part of the lower face of the clamp 9 is brought into contact with the metal with low melting point 16, the sudden drop of the temperature in the clamp 9 is prevented. Thus, high heat conduction efficiency can be maintained and the warmth of the clamp 9 is efficiently retained. Since the drop of the temperature in the clamp 9 is suppressed, the separation of the target material owing to the difference of the coefficient of a thermal expansion between the target material adhered to the surface and the clamp itself can be suppressed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus, and more particularly, it has a substrate pressing means for contacting a processing target substrate during vacuum processing to press the processing target substrate against a substrate holding table and separating it from the processing target substrate during standby. The present invention relates to a vacuum processing device.

[0002]

2. Description of the Related Art The structure of a conventional vacuum processing apparatus will be described with reference to FIG.

FIG. 5 shows a sectional view of a conventional sputtering apparatus. Basically, the lower container 100A and the upper lid 100B constitute a processing container 100 that can be evacuated. The target holding plate 101 is sandwiched and fixed at the joint between the lower container 100A and the upper lid 100B. A target member 103 is held at the center of the lower surface of the target holding plate 101. The lower container 100A is grounded, and a high frequency voltage is applied to the target holding plate 101.

A substrate holding table 104 is supported inside a processing container 100 by a pillar 105 so as to be vertically movable. A bellows 108 is attached between the lower surface of the substrate holding table 104 and the bottom surface of the processing container 100 to maintain the airtightness inside the processing container.

The substrate 1 to be processed is placed on the upper surface of the substrate holder 104.
13 is placed. Since the heater wire 106 is embedded inside the substrate holding base 104, the substrate holding base 104 and the processing target substrate 113 placed on the upper surface thereof can be heated. A gas flow path 107 is formed in the column 105 and the substrate holding table 104, and a gas can be introduced between the upper surface of the substrate holding table 104 and the processing target substrate 113 via the gas flow path 107.

An annular clamp ring 109 is arranged above the substrate holder 104. Clamp ring 10
9 is a pin 110 and a pin 11 attached to the lower surface thereof.
0 is inserted into the processing container 10 by the guide mechanism 111.
It is movably supported in the vertical direction. A clamp ring holding plate 112 is provided below the clamp ring 109.
Is arranged.

Next, the operation of the sputtering apparatus shown in FIG. 5 will be described. During sputtering, the substrate holder 10
4 is raised. The inner peripheral edge portion of the lower surface of the clamp ring 109 contacts the edge portion of the upper surface of the processing target substrate 113, and the weight of the clamp ring 109 causes the processing target substrate 113 to move.
Is pressed downwards. The substrate holder 104 is heated, and gas is supplied from the gas flow path 107 between the substrate holder 104 and the processing target substrate 113. This gas serves as a heat transfer medium and can heat the substrate 113 to be processed efficiently. The clamp ring 109 constrains the position within the holding surface so that the processing target substrate 113 does not move on the holding surface of the substrate holding table 104 during sputtering.

A sputtering gas is introduced into the processing container 100, and a voltage is applied to the target holding plate 101 to generate plasma. During standby, the supply of gas from the gas flow path 107 is stopped and the substrate holding table 104 is lowered. At the beginning of descending, the clamp ring 109 also descends as the substrate holding table 104 descends. When the substrate holding table 104 moves below the clamp ring holding plate 112, the clamp ring 109 is held by the clamp ring holding plate 112 and is separated from the processing target substrate 113.

[0009]

The clamp ring 109 of the sputtering apparatus shown in FIG. 5 is exposed to plasma during sputtering and becomes high in temperature. The film to be formed on the surface of the substrate also adheres to the surface of the clamp ring 109.
When the plasma is extinguished and the substrate holding table 104 is lowered, the temperature of the clamp ring 109 is lowered.

FIG. 6 shows the clamp ring 109 shown in FIG.
2 shows the temperature change during sputtering of. The horizontal axis represents the elapsed time from the start of sputtering in the unit of "minute", and the vertical axis represents the temperature of the clamp ring 109 in the unit of ° C.

When sputtering is started, the temperature of the clamp ring 109 rises with the passage of time. About 31
After a lapse of minutes, the sputtering was stopped and the substrate was replaced. At this time, the temperature of the clamp ring 109 is about 340
It drops sharply from ℃ to 180 ℃. When the substrate is replaced and the sputtering is started again, the temperature of the clamp ring 109 rises to about 330 ° C. When sputtering is stopped after about 62 minutes, clamp ring 1
The temperature at 09 drops sharply again.

When the temperature of the clamp ring 109 is rapidly lowered, the adhered film may be peeled off due to the difference in the coefficient of thermal expansion between the film attached to the surface and the clamp ring 109. The peeled film becomes a factor of particles adhering to the substrate surface.

An object of the present invention is to place in a vacuum vessel,
An object of the present invention is to provide a vacuum processing apparatus capable of preventing the adhered matter from peeling off from a member that may cause a temperature difference between the time of processing and the time of standby and suppressing the generation of particles.

Another object of the present invention is to provide a vacuum processing apparatus capable of efficiently heating a member to be heated arranged in a vacuum container.

[0015]

According to one aspect of the present invention, a processing container capable of being evacuated, a heating member arranged in the processing container, a heating member attached to the heating member, and the heating member being set to a target temperature. A heating means for heating up to, a heated member arranged in the processing container, a heating member arranged between the heating member and the heated member, having a melting point higher than the target temperature, and thermally A vacuum processing apparatus having a low melting point metal to be connected is provided.

The heating member and the member to be heated are thermally connected to each other through the melt of the low melting point metal. Therefore, it is possible to suppress a decrease in heat transfer efficiency between the heating member and the heated member when the processing container is evacuated to a high vacuum.

According to another aspect of the present invention, a processing container which can be evacuated, is disposed in the processing container, holds a substrate to be processed, and moves between a processing position and a standby position in the processing container. A possible substrate holder and a substrate pressing means arranged in the processing container, wherein when the substrate holder is at the processing position, a part of the surface of the substrate to be processed held by the substrate holder is When the substrate to be processed is pressed against the substrate holding table in contact with the area and the substrate holding table is in the standby position, the substrate holding means that is separated from the processing target substrate and the substrate holding table is in the standby position Further, there is provided a vacuum processing apparatus having a substrate pressing and holding means for holding the substrate pressing means at a position apart from the substrate holding base, and a heating means for heating the substrate pressing and holding means.

The substrate holding means can be heated when the substrate holding table is at the standby position and the substrate holding means is held by the substrate holding means. According to another aspect of the present invention, the substrate pressing and holding means is formed on the upper surface and the upper surface for holding the substrate pressing means facing the substrate pressing means when the substrate holding means is in the standby position. Provided is a vacuum processing apparatus having a recess for accommodating a low melting point metal.

By accommodating the low melting point metal in the recess and keeping it in a molten state, the substrate holding means and the substrate holding means can be thermally connected via the melt. Therefore, the heat conduction efficiency between the substrate pressing means and the substrate pressing / holding means can be improved.

According to another aspect of the present invention, a processing container which can be evacuated and is disposed in the processing container, holds a substrate to be processed, and moves between a processing position and a standby position in the processing container. A possible substrate holder and a substrate pressing means arranged in the processing container, wherein when the substrate holder is at the processing position, a part of the surface of the substrate to be processed held by the substrate holder is The substrate pressing unit that contacts the area and presses the substrate to be processed onto the substrate holding table, and the substrate holding unit that is separated from the substrate to be processed when the substrate holding table is at a standby position, and a heater wire attached to the substrate holding unit. And a current supply means for supplying a current to the heater wire via a conductive liquid when the substrate holder is in the standby position.

An electric current can be passed through the heater wire to heat the substrate pressing means. Since the current is passed through the conductive liquid, it is not necessary to directly contact the solid electrode on the heater wire side with the solid electrode on the current supply means side. Since it is possible to eliminate the contact between the solid current contacts, it is possible to prevent the generation of dust from the contact points.

According to another aspect of the present invention, a processing container which can be evacuated and is disposed in the processing container, holds a substrate to be processed, and moves between a processing position and a standby position in the processing container. A possible substrate holder and a substrate pressing means arranged in the processing container, wherein when the substrate holder is at the processing position, a part of the surface of the substrate to be processed held by the substrate holder is The substrate pressing unit that contacts the area and presses the substrate to be processed onto the substrate holding table, and the substrate holding unit that is separated from the substrate to be processed when the substrate holding table is at a standby position, and a heater wire attached to the substrate holding unit. And two conductive pins attached to the substrate pressing means and electrically connected to both ends of the heater wire, and two guide mechanisms arranged in the processing container and having a cylindrical internal cavity. Then, the two conductive pins are respectively inserted from one end of the internal cavity and the other end is closed, and the guide mechanism is attached to each of the two guide mechanisms. A vacuum processing apparatus having an electrode for supplying an electric current to the conductive pin inserted into the internal cavity of the guide mechanism is provided.

Since the heater wire and the electrode are not directly connected, the substrate pressing means can be easily replaced. When a conductive liquid is contained in the inner cavity of the guide mechanism, the heater wire and the electrode can be electrically connected via this liquid. Since it is possible to eliminate the contact between the solid current contacts, it is possible to prevent the generation of dust from the contact points.

According to another aspect of the present invention, a processing container capable of being evacuated to vacuum, a substrate holding base arranged in the processing container for holding a substrate to be processed, and a substrate holding base for heating the substrate holding base. A heating means for a table and a substrate holding means which is arranged in the processing container and presses a substrate to be processed against the substrate holding table during a processing period and separates from the substrate to be processed during a waiting period, and the substrate pressing during the waiting period. There is provided a vacuum processing apparatus having a substrate pressing and holding means for holding the means and a heating means for the substrate pressing and holding means for heating the substrate pressing and holding means.

The substrate pressing means can be heated during the waiting period. When the substrate pressing means is heated during the processing period, it is possible to prevent the temperature from decreasing during the standby period.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A vacuum processing apparatus according to a first embodiment of the present invention will be described with reference to FIG. 1, taking a sputtering apparatus as an example.

FIG. 1A shows a sectional view of a sputtering apparatus according to the first embodiment of the present invention. Basically, the lower container 1A and the upper lid 1B constitute a processing container 1 that can be evacuated. The target holding plate 2 is sandwiched and fixed at the joint between the lower container 1A and the upper lid 1B. Lower container 1A
The interface between the target holding plate 2 and the target holding plate 2 and the interface between the upper lid 1B and the target holding plate 2 are kept airtight by the O-ring. An insulating plate 28 is sandwiched between the lower container 1A and the target holding plate 2.

A target member 3 is held on the center of the lower surface of the target holding plate 2. The lower container 1A is grounded, and a high frequency voltage is applied to the target holding plate 2. A gas inlet pipe 30 and a gas exhaust pipe 31 are attached to the lower container 1A. The sputtering gas is introduced into the processing container 1 through the gas introduction pipe 30, and the inside of the processing container 1 is evacuated through the gas exhaust pipe 31.

A substrate holder 4 is arranged inside the processing container 1, and the substrate holder 4 is supported by columns 5 so as to be vertically movable. A bellows 8 is attached between the lower surface of the substrate holder 4 and the bottom surface of the processing container 1 to maintain the airtightness inside the processing container.

The target substrate 13 is placed on the upper surface of the substrate holder 4. The heater wire 6 is embedded in the substrate holding table 4 and can heat the substrate holding table 4 and the processing target substrate 13 placed on the upper surface thereof. A gas flow path 7 is formed in the column 5 and the substrate holding table 4, and a gas can be introduced between the upper surface of the substrate holding table 4 and the processing target substrate 13 via the gas flow path 7.

An annular clamp ring 9 is arranged above the substrate holder 4. The inner diameter of the clamp ring 9 is
It is slightly smaller than the diameter of the processing target substrate 13. On the lower surface of the clamp ring 9, at a position substantially symmetrical with respect to its center,
Further, in the vicinity of the outer peripheral end, two columnar pins 10 extending in a direction perpendicular to the lower surface are attached.

An annular guide mechanism fixing plate 20 is attached to the bottom surface of the processing container 1, and the guide mechanism fixing plate 20 is attached to the guide mechanism fixing plate 20.
Two guide mechanisms 11 are attached. The guide mechanism 11 defines a cylindrical cavity into which the pin 10 is inserted. The two pins 10 are respectively inserted into the two guide mechanisms 11, and the clamp ring 9 is supported so as to be movable only in the vertical direction.

Below the clamp ring 9, an annular clamp ring holding member 12 is arranged. The inner diameter of the clamp ring holding member 12 is larger than the diameter of the substrate support base 4, and the substrate support base 4 can pass vertically through the hollow portion of the clamp ring holding member 12.

A heater wire 14 is embedded inside the clamp ring holding member 12. The heater wire 14 is connected to a power source 19 arranged outside the processing container 1.
The clamp ring holding member 12 can be heated by passing an electric current through the heater wire 14.

A recess 15 is formed on the upper surface of the clamp ring holding member 12. A low melting point metal 16 such as indium (In), gallium (Ga) or an alloy of In and Ga is contained in the recess 15. The temperature of the low melting point metal 16 is detected by the thermocouple 17, and the output voltage thereof is input to the temperature control device 18. The temperature control device 18 controls the output of the power supply 19 so that the temperature of the low melting point metal 16 reaches a preset target temperature.

The melting point of Ga is 302.8K and the melting point of In is 429.4K, which is equal to or lower than the substrate temperature at the time of sputtering in a normal semiconductor process. Since the temperature of the clamp ring 9 is considered to be about the same as the substrate temperature, the low melting point metal is in a molten state during sputtering. Thus, a low melting point metal having a melting point lower than the target temperature is used.

The vapor pressure of Ga at 954 K and the vapor pressure of In at 850 K are both 1 × 10 ^-6 To.
rr. Since the vapor pressure is sufficiently lower than the pressure of ordinary sputtering, the vapor of the low melting point metal has little influence on the sputtering.

As described above, it is preferable to use a low melting point metal having a vapor pressure sufficiently smaller than the pressure in the processing container during vacuum processing. For example, the vapor pressure at the target temperature is preferably 1% or less of the pressure inside the processing container during vacuum processing.

Next, the operation of the sputtering apparatus shown in FIG. 1 (A) will be described. The target substrate 13 is provided on the upper surface of the substrate holder 4.
And the inside of the processing container 1 is evacuated. Substrate holder 4
To rise. The edge region of the upper surface of the processing target substrate 13 contacts the inner peripheral edge region of the lower surface of the clamp ring 9. When the substrate support base 4 is further raised, the clamp ring 9 is also raised as the substrate 13 to be processed is raised, and the clamp ring 9 is separated from the clamp ring holding member 12. At this time, the substrate 13 to be processed is pressed against the substrate holder 4 by the weight of the clamp ring 9. When the processing position for forming a film by sputtering is reached, the raising of the substrate holder 4 is stopped.

Ar gas is introduced between the substrate 13 to be processed and the substrate holder 4 through the gas flow path 7. A thin layer of Ar gas is formed between the processing target substrate 13 and the substrate holding base 4, but the processing target substrate 13 is pressed against the substrate holding base 4 by the clamp ring 9 and is placed in the mounting surface. Since the position is constrained, the substrate 13 to be processed can be stably held at a predetermined position.

Sputter gas is introduced from the gas introduction pipe 30, and the amount of introduction and the amount of exhaust are adjusted to bring the inside of the processing container 30 to a predetermined pressure. For example, it is set to about 1 × 10 ⁻³ Torr.
At this time, the flow rate of Ar gas is adjusted so that the pressure in the gap between the substrate 13 to be processed and the substrate holder 4 is about several Torr.

When the substrate 13 to be processed is in direct contact with the substrate holder 4, the substantial thermal contact area becomes small due to the microscopic unevenness on the back surface of the substrate. Therefore, the substrate 13 to be processed cannot be efficiently heated. By forming an Ar layer at the interface between the substrate 13 to be processed and the substrate holder 4, the Ar gas serves as a heat conductive medium, and the substrate 13 to be processed can be efficiently heated.

A voltage is applied to the target holding plate 2 to generate plasma in the processing container 1. At this time, a desired thin film is formed on the surface of the processing target substrate 13, and at the same time, the target material is also attached on the surface of the clamp ring 9. Further, the clamp ring 9 is exposed to plasma and heated, and the temperature rises.

After forming the desired thin film, the application of voltage to the target holding plate 2 and the introduction of the sputtering gas are stopped to extinguish the plasma. The introduction of Ar gas from the gas flow path 7 is stopped.

The substrate holder 4 is lowered to the standby position.
The clamp ring 9 also descends together with the substrate holder 4, and is held by the clamp ring holding member 12. At this time,
A desired current is passed through the heater wire 14 to heat the low melting point metal 16 to a predetermined temperature equal to or higher than the melting point thereof to form a melt. Since a part of the lower surface of the clamp ring 9 contacts the low melting point metal 16, it is possible to prevent the temperature of the clamp ring 9 from rapidly decreasing.

Even if the lower surface of the clamp ring 9 has microscopic unevenness, the melt of the low melting point metal 16 comes into close contact with the lower surface of the clamp ring 9. Therefore, high heat conduction efficiency can be maintained, and the clamp ring 9 can be efficiently kept warm.

Since the decrease in the temperature of the clamp ring 9 is suppressed, it is possible to suppress the peeling of the target material due to the difference in the coefficient of thermal expansion between the target material attached to the surface and the clamp ring itself. Since the adhered matter on the surface of the clamp ring 9 is less likely to be peeled off, the adherence of particles to the surface of the processing target substrate 13 can be suppressed.

The substrate 13 to be processed is exchanged and the sputtering process is performed in the same procedure as described above. The clamp ring 9 is kept warm until the start of sputtering.
Since the target material accumulates and accumulates on the surface of the clamp ring 9, it is necessary to clean the surface of the clamp ring 9 at regular intervals. As shown in FIG. 1 (A), the clamp ring 9 only has the pin 10 attached to the lower surface thereof inserted into the guide mechanism 11, and is not directly connected to the processing container 1. Therefore, the clamp ring 9 can be easily removed, and the clamp ring 9 can be easily washed or replaced.

FIG. 1B shows a partial sectional view of a clamp ring and a clamp ring holding member according to a modification of the first embodiment. Although the case where the lower surface of the clamp ring 9 is flat has been described with reference to FIG. 1A, the clamp ring 9 shown in FIG. 1B has a convex portion 9a formed on the lower surface thereof.
Other configurations are similar to those of the sputtering apparatus shown in FIG. When the clamp ring 9 is held by the clamp ring holding member 12, the convex portion 9a is inserted into the concave portion 15, and its tip is immersed in the melt 16 of the low melting point metal.

In this way, the convex portion 9a is provided on the lower surface of the clamp ring 9, and the tip of the convex portion 9a has the melt 16 of the low melting point metal.
The clamp ring 9 can be more surely brought into contact with the melt 16 of the low melting point metal by immersing the clamp ring 9 in the melt.
Thereby, the heat conduction efficiency from the clamp ring holding member 12 to the clamp ring 9 can be improved.

FIG. 2 shows a sectional view of a sputtering apparatus according to the second embodiment. In the structure of the clamp ring holding member 12, the sputtering apparatus shown in FIG.
It is different from the sputtering apparatus shown in (A). Other configurations are the same as those of the sputtering apparatus shown in FIG.

A gas passage 21 in the circumferential direction is formed inside the annular clamp ring holding member 12. A gas flow path 21 from the outside of the processing container 1 via a gas introduction path 23.
Gas is supplied inside. The gas supplied into the gas flow passage 21 is ejected into the processing container 1 through the gas ejection holes 22 provided in the upper surface of the clamp ring holding member 12.

Inside the clamp ring holding member 12,
The heater wire 14 is the same as in the sputtering apparatus of FIG.
Is arranged. In addition, the clamp ring holding member 12
Is detected by the thermocouple 17.

When performing sputtering, the introduction of gas from the gas introduction passage 23 into the gas passage 21 is stopped, and the substrate holder 4 is raised to the processing position. When the film formation by sputtering is completed, the substrate holder 4 is lowered to the standby position. An inert gas such as Ar is introduced from the gas introduction passage 23 into the gas passage 21.

The clamp ring 9 is held on the upper surface of the clamp ring holding member 12. Ar from the gas ejection hole 22
Since gas is ejected, a thin layer of Ar gas is formed between the lower surface of the clamp ring 9 and the upper surface of the clamp ring holding member 12.

Next, the effect of the thin layer of Ar gas formed between the heating member and the non-heating member will be described with reference to FIG. FIG. 3 shows the temperature of the substrate holder 4 shown in FIG.
Then, the time change of the temperature of the substrate 13 when the substrate 13 placed on the substrate is heated is shown. The horizontal axis of the graph represents the elapsed time in the unit of "second", and the vertical axis represents the temperature of the substrate 13 in the unit of ° C. Each curve in the graph corresponds to the temperature of one measurement point on the substrate 13. FIG. 3 shows temperature changes at five representative measurement points. The pressure inside the processing container 1 is 1
The pressure is controlled to 10 × 10 ⁻³ Torr or less, and the pressure of the Ar gas thin layer portion is controlled to several Torr.

Until 100 seconds have elapsed from the reference time, Ar gas is not supplied between the substrate holder 4 and the substrate 13, and the substrate 13 is in direct contact with the substrate holder 4. The supply of Ar gas was started when about 100 seconds passed from the reference time.

When Ar gas is not supplied, the substrate 13
The temperature of No. 1 increased only to about 185 to 200 ° C. When Ar gas was supplied, the temperature rose to 260 to 280 ° C. It is considered that by forming a thin layer of Ar between the substrate holder 4 and the substrate 13, the heat transfer efficiency between the two was increased.

FIG. 3 shows the case where the substrate 13 is heated by the substrate holder 4, but when the clamp ring 9 is heated by the clamp ring holding member 12, Ar is also used.
It is believed that a similar effect can be obtained by forming a thin layer of gas.

In the second embodiment shown in FIG. 2,
When the substrate holder 4 is at the standby position, the clamp ring 9 is held on the upper surface of the clamp ring holding member 12,
Meanwhile, a thin layer of Ar gas is formed. By heating the clamp ring holding member 12 to a predetermined temperature,
The clamp ring 9 can be efficiently kept warm. The heated Ar gas may be introduced into the gas passage 21. It will be possible to keep the temperature of the clamp ring 9 more effectively by heating the Ar gas.

FIG. 4 shows a sectional view of a sputtering apparatus according to the third embodiment of the present invention. In the sputtering apparatus shown in FIGS. 1A and 2, the clamp ring holding member 12 is heated, and the clamp ring 9 is indirectly heated by heat conduction from the clamp ring holding member 12 to the clamp ring 9. On the other hand, in the sputtering apparatus shown in FIG. 4, the clamp ring 9 is directly heated by the heater wire arranged inside the clamp ring 9.

The structure of the sputtering apparatus shown in FIG.
Description will be made focusing on the difference from the configuration of the sputtering apparatus illustrated in FIG. A heater wire 25 is embedded inside the annular clamp ring 9. Clamp ring 9
Is formed, for example, by arranging a sheath wire in which the surface of the heater wire is doubly covered with a MgO film and a stainless steel film in a cavity of a hollow stainless member and filling the cavity with aluminum. Alternatively, a sandwich structure in which a heater wire is sandwiched between two plates may be used.

The two pins 10 attached to the lower surface of the clamp ring 9 are made of a conductive material such as copper (Cu). Both ends of the heater wire 25 are electrically connected to the two pins 10, respectively.

In the sputtering apparatus shown in FIG. 1A, the cylindrical cavity in the guide mechanism 11 communicates with the lower side of the guide mechanism fixing plate 20, and both ends thereof are open. On the other hand, in the sputtering apparatus shown in FIG. 4, the lower end of the cylindrical cavity in the guide mechanism 11 is the guide mechanism fixing plate 20.
Is closed by A low-melting-point metal melt 24 is contained in the bottom of the cylindrical cavity.

The electrode 26 is attached to the bottom surface of the cylindrical cavity defined by the guide mechanism 11 and the guide mechanism fixing plate 20. The electrode 26 is connected to a power source 19 arranged outside the processing container 1 via a lead wire 27.

The clamp ring holding member 12 is an annular plate, and no heating mechanism is provided. When the substrate holder 4 is lowered to the standby position, the pin 10 is deeply inserted into the cylindrical cavity defined by the guide mechanism 11 and the guide mechanism fixing plate 20, and the lower end thereof contacts the melt 24 of the low melting point metal. Power supply 19 to lead wire 27, electrode 26, melt 2
An electric current is supplied to the heater wire 25 via 4 and the pin 10. The heater wire 25 heats the clamp ring 9 and can prevent the temperature of the clamp ring 9 from decreasing.

The low melting point metal melt 24 is not contained,
The lower end of the pin 10 and the electrode 26 may be brought into direct contact with each other.
However, in order to stably obtain good electrical connection, it is preferable to contain the melt 24. Further, by containing the melt 24, it is possible to prevent the generation of dust from the contact portion between the pin 10 and the electrode 26.

In the sputtering apparatus shown in FIG. 4, since the lead wire is not directly connected to the heater wire 25 in the clamp ring 9, the clamp ring 9 can be easily removed, and the clamp ring 9 can be easily washed or replaced. be able to.

In the first to third embodiments, the case where the substrate to be processed is brought into contact with or separated from the clamp ring by moving the substrate holder up and down has been described, but the substrate holder is fixed. Alternatively, the clamp ring may be driven to move up and down.

In the above first to third embodiments, the sputtering apparatus has been described as an example, but the reduction of the heat conduction efficiency between the heating member and the heated member also occurs in other vacuum processing apparatuses. obtain. By thermally connecting the heating member and the heated member through a fluid such as a low-melting metal or gas as in the above-mentioned embodiment, the reduction of the thermal conductivity is prevented as in the case of the sputtering device. Yes, and efficient heating will be possible.

The present invention has been described in connection with the preferred embodiments.
The present invention is not limited to these. For example, it will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.

[0072]

As described above, according to the present invention,
Efficient heating can be performed by thermally connecting the heating member and the heated member via the fluid heat transfer medium in the vacuum container. Further, the clamp ring for pressing the substrate to be processed against the substrate holder during the process can be efficiently kept warm during the non-process period. Since it is possible to prevent the temperature of the clamp ring from decreasing during the non-treatment period, it is possible to prevent the adhered matter on the surface of the clamp ring from peeling off due to the difference in the coefficient of thermal expansion.

[Brief description of drawings]

FIG. 1 is a sectional view of a sputtering apparatus according to a first embodiment of the present invention, and a partial sectional view of a clamp ring and a clamp ring holding member according to a modification.

FIG. 2 is a sectional view of a sputtering apparatus according to a second embodiment of the present invention.

FIG. 3 is a graph showing a temperature change of a substrate in a processing container.

FIG. 4 is a sectional view of a sputtering apparatus according to a third embodiment of the present invention.

FIG. 5 is a cross-sectional view of a conventional sputtering device.

FIG. 6 is a graph showing a temperature change of a clamp ring of a sputtering device according to a conventional example.

[Explanation of symbols]

 1 Processing Container 2 Target Holding Plate 3 Target Member 4 Substrate Holding Base 5 Support 6 Heater Wire 7 Gas Flow Path 8 Bellows 9 Clamp Ring 10 Pin 11 Guide Mechanism 12, 12a Clamp Ring Holding Member 13 Processing Target Substrate 14, 25 Heater Wire 15 Recesses 16 and 24 Low melting point metal 17 Thermocouple 18 Temperature control device 19 Power supply 20 Guide mechanism fixing plate 21 Gas flow passage 22 Gas ejection hole 23 Gas introduction passage 26 Electrode 27 Lead wire 28 Insulation plate 30 Gas introduction pipe 31 Gas exhaust pipe 100 Processing container 101 Target holding plate 103 Target 104 Substrate holding table 105 Strut 106 Heater wire 107 Gas flow path 108 Bellows 109 Clamp ring 110 Pin 111 Guide mechanism 112 Clamp ring holding plate 113 Processing target substrate

Claims (10)

[Claims] 1. A processing container capable of being evacuated to vacuum, a heating member arranged in the processing container, a heating unit attached to the heating member for heating the heating member to a target temperature, and inside the processing container. A vacuum processing apparatus comprising: a member to be heated that is arranged; and a low-melting point metal that is arranged between the heating member and the member to be heated, has a melting point higher than the target temperature, and thermally connects the two. 2. The vacuum processing apparatus according to claim 1, wherein the low melting point metal is one metal selected from the group consisting of gallium, indium, and a gallium indium alloy. 3. A processing container that can be evacuated, a substrate holding table that is disposed in the processing container, holds a substrate to be processed, and is movable in the processing container between a processing position and a standby position, A substrate pressing means arranged in the processing container,
When the substrate holder is in the processing position, the substrate holder is pressed against the substrate holder by contacting a partial area of the surface of the substrate held by the substrate holder, The substrate pressing means that separates from the substrate to be processed when in the standby position, and the substrate pressing and holding means that holds the substrate pressing means in a position apart from the substrate holding table when the substrate holding base is in the standby position. And a heating means for heating the substrate pressing and holding means. 4. A low melting point metal formed on the upper surface, the upper surface of the substrate pressing and holding means facing the substrate pressing means and holding the substrate pressing means when the substrate holding means is in a standby position. The vacuum processing apparatus according to claim 3, further comprising a recess for accommodating the. 5. The substrate holding means is formed on a lower surface facing the upper surface of the substrate holding means and the lower surface when the substrate holding means is in the standby position, and the lower surface is the upper surface of the holding means. 5. The vacuum processing apparatus according to claim 4, further comprising a convex portion that is inserted into the concave portion that is formed on the upper surface of the holding unit when facing the. 6. The substrate pressing / holding means holds the substrate pressing means with a gap between the substrate pressing / holding means and the substrate pressing means, and the substrate pressing / holding means further holds the substrate pressing means. 4. The vacuum processing apparatus according to claim 3, further comprising gas inflow means for injecting gas into a gap between the substrate pressing and holding means and the substrate pressing means while holding the means. 7. A processing container that can be evacuated, a substrate holding table that is arranged in the processing container, holds a substrate to be processed, and is movable between a processing position and a standby position in the processing container, A substrate pressing means arranged in the processing container,
When the substrate holder is in the processing position, the substrate holder is pressed against the substrate holder by contacting a partial area of the surface of the substrate held by the substrate holder, When the substrate holding unit is at the standby position, the substrate holding unit is separated from the substrate to be processed, the heater wire attached to the substrate holding unit, and the conductive liquid is applied to the heater line when the substrate holding table is at the standby position. A vacuum processing apparatus having a current supply means for supplying a current via the. 8. A processing container that can be evacuated, a substrate holding table that is arranged in the processing container, holds a substrate to be processed, and is movable between a processing position and a standby position in the processing container, A substrate pressing means arranged in the processing container,
When the substrate holder is at the processing position, the substrate holder is pressed against the substrate holder by contacting a partial area of the surface of the substrate held by the substrate holder, When in the standby position, the substrate pressing means that separates from the substrate to be processed, the heater wire attached to the substrate pressing means, the substrate pressing means, and the heater wires are electrically connected to both ends of the heater wire. 2 conductive pins, and a cylindrical internal cavity disposed inside the processing container.
Two guide mechanisms in which the two conductive pins are respectively inserted from one end of the internal cavity and the other end is closed; An electrode for supplying an electric current to the conductive pin that is attached and is inserted into the internal cavity of the guide mechanism. 9. A conductive liquid contained in each internal cavity of the guide mechanism, wherein the electrode and the corresponding conductive pin are electrically connected via the conductive liquid. The vacuum processing apparatus according to claim 8, which is connected. 10. A processing container capable of being evacuated to vacuum, a substrate holding base arranged in the processing container for holding a substrate to be processed, a substrate holding base heating means for heating the substrate holding base, A substrate holding unit that is arranged in the processing container and holds the substrate to be processed against the substrate holding table during the processing period and separates from the substrate to be processed during the standby period, and a substrate pressing and holding unit that holds the substrate holding unit during the standby period. A vacuum processing apparatus comprising: means and a heating means for the substrate pressing and holding means for heating the substrate pressing and holding means.