AU2001231132A1 - Plasma processing system and method - Google Patents

Plasma processing system and method

Info

Publication number
AU2001231132A1
AU2001231132A1 AU2001231132A AU3113201A AU2001231132A1 AU 2001231132 A1 AU2001231132 A1 AU 2001231132A1 AU 2001231132 A AU2001231132 A AU 2001231132A AU 3113201 A AU3113201 A AU 3113201A AU 2001231132 A1 AU2001231132 A1 AU 2001231132A1
Authority
AU
Australia
Prior art keywords
processing system
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001231132A
Inventor
Terry Bluck
James H. Rogers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intevac Inc
Original Assignee
Intevac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intevac Inc filed Critical Intevac Inc
Publication of AU2001231132A1 publication Critical patent/AU2001231132A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0822—Multiple sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
AU2001231132A 2000-02-01 2001-01-23 Plasma processing system and method Abandoned AU2001231132A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09495548 2000-02-01
US09/495,548 US6368678B1 (en) 1998-05-13 2000-02-01 Plasma processing system and method
PCT/US2001/002392 WO2001058223A1 (en) 2000-02-01 2001-01-23 Plasma processing system and method

Publications (1)

Publication Number Publication Date
AU2001231132A1 true AU2001231132A1 (en) 2001-08-14

Family

ID=23969039

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001231132A Abandoned AU2001231132A1 (en) 2000-02-01 2001-01-23 Plasma processing system and method

Country Status (7)

Country Link
US (1) US6368678B1 (en)
JP (1) JP2003522297A (en)
KR (1) KR100485034B1 (en)
CN (1) CN1397151A (en)
AU (1) AU2001231132A1 (en)
DE (1) DE10195251B4 (en)
WO (1) WO2001058223A1 (en)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6870164B1 (en) * 1999-10-15 2005-03-22 Kaufman & Robinson, Inc. Pulsed operation of hall-current ion sources
US6919001B2 (en) * 2000-05-01 2005-07-19 Intevac, Inc. Disk coating system
US9255329B2 (en) * 2000-12-06 2016-02-09 Novellus Systems, Inc. Modulated ion-induced atomic layer deposition (MII-ALD)
US6627268B1 (en) * 2001-05-03 2003-09-30 Novellus Systems, Inc. Sequential ion, UV, and electron induced chemical vapor deposition
FR2836772B1 (en) * 2002-03-04 2004-07-09 Absys GAS GENERATOR FOR A STERILIZATION SYSTEM
US20030209518A1 (en) * 2002-05-08 2003-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of detecting abnormal chamber conditions in etcher
WO2003095130A1 (en) * 2002-05-08 2003-11-20 Dana Corporation Plasma-assisted sintering
US7262555B2 (en) * 2005-03-17 2007-08-28 Micron Technology, Inc. Method and system for discretely controllable plasma processing
US7578301B2 (en) * 2005-03-28 2009-08-25 Lam Research Corporation Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system
US20070119375A1 (en) * 2005-11-30 2007-05-31 Darrin Leonhardt Dual large area plasma processing system
US7871678B1 (en) 2006-09-12 2011-01-18 Novellus Systems, Inc. Method of increasing the reactivity of a precursor in a cyclic deposition process
US8053372B1 (en) 2006-09-12 2011-11-08 Novellus Systems, Inc. Method of reducing plasma stabilization time in a cyclic deposition process
EP1936656A1 (en) 2006-12-21 2008-06-25 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Plasma generator and method for cleaning an object
US8581523B2 (en) * 2007-11-30 2013-11-12 Mevion Medical Systems, Inc. Interrupted particle source
US20090201722A1 (en) * 2008-02-12 2009-08-13 Kamesh Giridhar Method including magnetic domain patterning using plasma ion implantation for mram fabrication
US8551578B2 (en) * 2008-02-12 2013-10-08 Applied Materials, Inc. Patterning of magnetic thin film using energized ions and thermal excitation
US8535766B2 (en) 2008-10-22 2013-09-17 Applied Materials, Inc. Patterning of magnetic thin film using energized ions
US20090199768A1 (en) * 2008-02-12 2009-08-13 Steven Verhaverbeke Magnetic domain patterning using plasma ion implantation
US9685186B2 (en) * 2009-02-27 2017-06-20 Applied Materials, Inc. HDD pattern implant system
EP2410555A1 (en) * 2010-07-19 2012-01-25 Applied Materials, Inc. Apparatus and method for detecting a state of a deposition apparatus
KR101199210B1 (en) * 2010-10-28 2012-11-07 한국에너지기술연구원 Apparatus, method and system for depositing layer of solar cell
JP5679423B2 (en) * 2010-11-02 2015-03-04 富士電機株式会社 DLC thin film manufacturing method and apparatus
WO2012060940A1 (en) 2010-11-04 2012-05-10 Novellus Systems, Inc. Ion-induced atomic layer deposition of tantalum
US8980046B2 (en) 2011-04-11 2015-03-17 Lam Research Corporation Semiconductor processing system with source for decoupled ion and radical control
US9111728B2 (en) 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US9177756B2 (en) 2011-04-11 2015-11-03 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US20120255678A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation Multi-Frequency Hollow Cathode System for Substrate Plasma Processing
SG10201602785TA (en) * 2011-04-11 2016-05-30 Lam Res Corp E-beam enhanced decoupled source for semiconductor processing
US8758638B2 (en) * 2011-05-10 2014-06-24 Applied Materials, Inc. Copper oxide removal techniques
US8692467B2 (en) * 2011-07-06 2014-04-08 Lam Research Corporation Synchronized and shortened master-slave RF pulsing in a plasma processing chamber
US20130098872A1 (en) * 2011-10-20 2013-04-25 Applied Materials, Inc. Switched electron beam plasma source array for uniform plasma production
CN103959380B (en) 2011-11-23 2017-08-29 应用材料公司 Method for silica chemistry vapour deposition photoresist planarization
EP2795657B1 (en) * 2011-12-19 2018-12-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Device for producing a hollow cathode arc discharge plasma
US9443700B2 (en) * 2013-03-12 2016-09-13 Applied Materials, Inc. Electron beam plasma source with segmented suppression electrode for uniform plasma generation
CN103794453A (en) * 2013-07-18 2014-05-14 北京中科信电子装备有限公司 Dual-filament plasma shower device
US20160097118A1 (en) * 2014-10-01 2016-04-07 Seagate Technology Llc Inductively Coupled Plasma Enhanced Chemical Vapor Deposition
CN104979152A (en) * 2015-07-28 2015-10-14 中国科学技术大学 Ion implantation equipment
JP6520762B2 (en) * 2016-03-07 2019-05-29 東レ株式会社 Sheet charging and adhering apparatus, sheet vacuum deposition apparatus, and method for producing thin film-attached sheet
KR101677005B1 (en) * 2016-04-05 2016-11-17 (주)화인솔루션 Plasma Processing Appratus of Controlling Electric Charge
CN105764225B (en) * 2016-05-19 2018-11-27 中国工程物理研究院材料研究所 A kind of compact type large power hollow cathode discharge device
CN105848396B (en) * 2016-05-19 2019-01-15 中国工程物理研究院材料研究所 A kind of device adjusting ion energy using hollow cathode
CN105764227B (en) * 2016-05-19 2019-01-15 中国工程物理研究院材料研究所 A kind of high line direct current hollow-cathode plasma source
KR102651759B1 (en) * 2016-10-11 2024-03-29 삼성디스플레이 주식회사 Deposition apparatus
CN109957752B (en) * 2017-12-26 2022-10-28 佳能特机株式会社 Substrate processing apparatus, method of controlling the same, film forming apparatus, and method of manufacturing electronic component
JP7018418B2 (en) * 2019-10-07 2022-02-10 日本電子株式会社 Electron gun, electron microscope, three-dimensional laminated modeling device, and current adjustment method for electron gun
US20230009866A1 (en) * 2019-12-04 2023-01-12 Jiangsu Favored Nanotechnology Co., Ltd. Electrode support, supporting structure, support, film coating apparatus, and application
CN112899639B (en) * 2019-12-04 2022-08-19 江苏菲沃泰纳米科技股份有限公司 Diamond-like carbon film preparation device and preparation method
KR102599027B1 (en) 2021-09-17 2023-11-06 한국원자력연구원 System for controlling plasma uniformity using multi-pulsing and method thereof
US11877378B2 (en) * 2021-10-08 2024-01-16 National Yang Ming Chiao Tung University Plasma fine bubble liquid generating apparatus
CN116364541B (en) * 2023-05-30 2023-08-08 艾瑞森表面技术（苏州）股份有限公司 Plasma etching method and plasma etching system

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183797A (en) 1978-12-22 1980-01-15 International Business Machines Corporation Two-sided bias sputter deposition method and apparatus
US4500507A (en) 1981-10-30 1985-02-19 Wong Dennis W Diagnostic composition for radiologic imaging of neoplasms in the body and method of preparation
US4862032A (en) 1986-10-20 1989-08-29 Kaufman Harold R End-Hall ion source
JPS63274762A (en) * 1987-05-01 1988-11-11 Ulvac Corp Device for forming reaction vapor-deposited film
JP2834797B2 (en) 1989-10-25 1998-12-14 株式会社リコー Thin film forming equipment
US5160544A (en) 1990-03-20 1992-11-03 Diamonex Incorporated Hot filament chemical vapor deposition reactor
US5186973A (en) 1990-09-13 1993-02-16 Diamonex, Incorporated HFCVD method for producing thick, adherent and coherent polycrystalline diamonds films
US5124179A (en) 1990-09-13 1992-06-23 Diamonex, Incorporated Interrupted method for producing multilayered polycrystalline diamond films
US5637353A (en) 1990-09-27 1997-06-10 Monsanto Company Abrasion wear resistant coated substrate product
US5268217A (en) 1990-09-27 1993-12-07 Diamonex, Incorporated Abrasion wear resistant coated substrate product
US5527596A (en) 1990-09-27 1996-06-18 Diamonex, Incorporated Abrasion wear resistant coated substrate product
CA2052080C (en) * 1990-10-10 1997-01-14 Jesse N. Matossian Plasma source arrangement for ion implantation
DE4216330A1 (en) * 1991-05-18 1992-11-19 Groza Igor Ion plasma processing of products - using plasma stream in vacuum chamber with arc discharges and with an electric field directed inwards from the edge of the plasma reservoir
US5147687A (en) 1991-05-22 1992-09-15 Diamonex, Inc. Hot filament CVD of thick, adherent and coherent polycrystalline diamond films
CH687111A5 (en) * 1992-05-26 1996-09-13 Balzers Hochvakuum A method for generating a low voltage discharge, vacuum treatment system here, as well as for application of the method.
DE4223505C1 (en) * 1992-07-17 1993-11-04 Fraunhofer Ges Forschung Reactive magnetron sputtering device for application of insulating or low conductivity layer - uses anode potential for relative isolation of all parts in contact with plasma on outside of cathode target
US5292370A (en) 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
US5487785A (en) 1993-03-26 1996-01-30 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5616179A (en) 1993-12-21 1997-04-01 Commonwealth Scientific Corporation Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films
US5618619A (en) 1994-03-03 1997-04-08 Monsanto Company Highly abrasion-resistant, flexible coatings for soft substrates
US5508368A (en) 1994-03-03 1996-04-16 Diamonex, Incorporated Ion beam process for deposition of highly abrasion-resistant coatings
DE4413655A1 (en) 1994-04-20 1995-10-26 Leybold Ag Coating system
US5462784A (en) 1994-11-02 1995-10-31 International Business Machines Corporation Fluorinated diamond-like carbon protective coating for magnetic recording media devices
DE19506799A1 (en) * 1995-02-27 1996-08-29 Siemens Ag Sputtering appts. for thin film prodn.
WO1998010115A1 (en) 1996-09-03 1998-03-12 Monsanto Company Silicon-doped diamond-like carbon coatings for magnetic transducers and for magnetic recording media
US6086796A (en) 1997-07-02 2000-07-11 Diamonex, Incorporated Diamond-like carbon over-coats for optical recording media devices and method thereof
DE19902146C2 (en) * 1999-01-20 2003-07-31 Fraunhofer Ges Forschung Method and device for pulsed plasma activation

Also Published As

Publication number Publication date
KR20020086487A (en) 2002-11-18
KR100485034B1 (en) 2005-04-25
JP2003522297A (en) 2003-07-22
DE10195251T1 (en) 2003-05-08
US6368678B1 (en) 2002-04-09
WO2001058223A1 (en) 2001-08-09
DE10195251B4 (en) 2005-09-15
CN1397151A (en) 2003-02-12

Similar Documents

Publication Publication Date Title
AU2001231132A1 (en) Plasma processing system and method
AU2001279189A1 (en) Plasma processing method and apparatus
AU2001265093A1 (en) Methods and apparatus for plasma processing
AU2001249739A1 (en) Method and system for processing food
AU2002331887A1 (en) System and method for processing packets
AU2001265910A1 (en) Data processing system and method
AU2001295072A1 (en) Object detection system and method
AU2001288372A1 (en) System and method for tele-ophthalmology
AU2002214667A1 (en) System and method for rapid telepositioning
AU2001243365A1 (en) System and method for process protection
AU2001271030A1 (en) Plasma processing apparatus
AU2001241401A1 (en) Financial processing system and method
AU2002222639A1 (en) Processing method and processing apparatus
AU2003294492A1 (en) Plasma processing system and method
SG105523A1 (en) Substrate processing system and substrate processing method
AU2002302003A1 (en) Method and system for processing electrocardial signals
AU2001241620A1 (en) System and method for image processing
AU2002213227A1 (en) Generalizer system and method
AU2002367835A1 (en) Method and system for processing bio-contaminated articles
AU5506201A (en) Information processing method and system
AU2001270163A1 (en) Vacuum plasma processor apparatus and method
AU2003278885A1 (en) Plasma processing system and method
EP1091396A3 (en) Plasma processing method
AU2658901A (en) A method and system for processing complex numbers
AU2001261266A1 (en) Plasma processing method and apparatus