CN103794453A - Dual-filament plasma shower device - Google Patents

Dual-filament plasma shower device Download PDF

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Publication number
CN103794453A
CN103794453A CN201310304592.1A CN201310304592A CN103794453A CN 103794453 A CN103794453 A CN 103794453A CN 201310304592 A CN201310304592 A CN 201310304592A CN 103794453 A CN103794453 A CN 103794453A
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CN
China
Prior art keywords
filament
mainly
water
ion
joint
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Pending
Application number
CN201310304592.1A
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Chinese (zh)
Inventor
张进学
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Zhongkexin Electronic Equipment Co Ltd
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Beijing Zhongkexin Electronic Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Beijing Zhongkexin Electronic Equipment Co Ltd filed Critical Beijing Zhongkexin Electronic Equipment Co Ltd
Priority to CN201310304592.1A priority Critical patent/CN103794453A/en
Publication of CN103794453A publication Critical patent/CN103794453A/en
Pending legal-status Critical Current

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Abstract

The invention relates to a dual-filament plasma shower device that is mainly used for electron neutralization of an ion beam at a low-energy large-beam ion injection tail end. The device mainly comprises ion source and extraction systems (1) including filaments, arch chamber cavities, magnets, extraction electrodes, and connecting bars, an air supply system (2) including a valve, a joint, and a pipe, water-cooled electrodes (3) including a male lead heads, female lead terminals, insulated compression rings, sealing rings, and lead protection covers and the like, a cooling system (4) mainly using a quick-plug joint, an NPT joint, a water-cooled tube and a pipeline and the like to form a circulation loop to cool a system heating component; and a mounting support system (5) including a flange, an insulated flange, and a water-cooled support. The device is characterized in that a dual-filament structure is used; and compared with the single-filament structure, the dual-filament structure enables the showering effect to be good and the efficiency to be high. The structure of the device is compact and the modularized design mode is used; and in the terms of the installation and maintenance, the service life of the device is prolonged because of the cooling system based on the reasonable design. The provided device is applied to the large-beam ion injection device and the actual using effect is good.

Description

A kind of two filament plasma flood device
Technical field
The present invention relates to a kind of two filament plasma flood device device, ion shower rifle produces high density, oligosaprobic plasma, ion beam is carried out to efficient charging neutrality, eliminate efficiently the accumulation of static electricity of wafer surface in injection technology process, guarantee to inject the rate of finished products of product, improved the uniformity of Implantation, this device is that low energy large beam ion injects one of key device of equipping.
Background technology
In existing semiconductor integrated circuit manufacturing technology, along with the development of semiconductor integrated circuit technology, integrated level is more and more higher, and circuit scale is increasing, and in circuit, unit component size is more and more less, and each semiconductor manufacturing equipment is had higher requirement.Along with chip production technological development is in great demand to the ion implantation device of the large line of low energy, 45nm low energy large beam ion implanter is applied very extensive in IC technique, has become Implantation key processing equipment.
Broadband ion source produces high-density plasma, is drawn the broadband ion beam with certain width size by extraction system, and ion beam, through overshoot, focusing, angle correction, finally enters target chamber.The ion beam that enters target chamber conventionally can be with a certain amount of electronics, the negative electrical charge charging that electronic injection may cause due to high energy electron to wafer in wafer, and this is unallowed in chip production time.In order to eliminate the impact of electronics, allly at light path end, plasma flood device is installed, eliminate electronics charging, therefore, ion concentration focusing arrangement is the requisite key device of low energy large beam ion implanter.
Summary of the invention
The invention discloses one one kinds of two filament plasma flood device devices, these devices and can neutralize the high energy electron that injects wafer.The present invention realizes by following scheme:
This device mainly comprises 2 ion sources and extraction system (1), comprises filament, arc chamber cavity, magnet, extraction electrode, intercell connector; Plenum system (2), comprises valve, joint, pipe; 4 water cooled electrodes (3), comprise hectometre the end of a thread, female lead terminal, insulation pressure ring, sealing ring, pilot protection cover etc.; Cooling system (4), mainly forms circulation line by quick connector, NPT joint, water cooling tube and pipeline etc. and carrys out cooling system heat generating components; Support system (5) is installed, comprises flange, insulating flange, water cooled holder.
This application of installation its major advantage in large beam ion injection device is to adopt two filamentray structures, and shower effects is better compared with single filament, efficiency is higher; This apparatus structure compactness, adopts modular design simultaneously, installation and maintenance aspect, and the cooling system of appropriate design can extend the useful life of this device.
Accompanying drawing explanation
Fig. 1 is general structure schematic diagram of the present invention.
Fig. 2 is ion source of the present invention and extraction system (1) structural representation.
Fig. 3 is water cooled electrode of the present invention (3) structural representation.
Fig. 4 is cooling system of the present invention (4) schematic diagram.
Embodiment
Below in conjunction with the specific embodiment of accompanying drawing, the invention will be described further, should be appreciated that, these descriptions are all illustrative, the invention is not restricted to this.Scope of the present invention is only limited by the scope of claims.
Figure of abstract is the general structure schematic diagram of this device, and flange and insulating flange are installed this device by screw, has seal groove that sealing ring sealing is installed in flange; There are two arc chambers one end of water cooled holder, inner water-cooling channel in addition, and flange and insulating flange and water cooled holder have made the agent structure of this device into, refer to figure (1); In ion source and extraction system (1), filament (7) is clamped by filament connecting rod (11), be fixed in water cooled holder by lamp filament (10), extraction electrode (6) circular hole faces filament (7), magnet (8) is arranged in water cooled holder fluting, and two magnet are shown in Fig. 2 about filament Central Symmetry; Plenum system (2), mainly by the steel pipe of supplying gas, welding point, air valves etc. are welded, wherein main snorkel caliber is 1/4 ", air inlet caliber 1/8 "; 4 water cooled electrodes (3) are arranged in flange perforate, fix by nut, and 20 RunddichtringO sealings are installed, one end of female lead riser (13) is connected with the copper bar in ion source and extraction system (1) by copper bar, to filament (7) energising, see Fig. 3 by water cooled electrode (3); Cooling system (4) is by being mainly made up of quick connector, NPT joint, water pipe and pipeline etc., Fig. 4 is shown in by schematic diagram, between 4 water cooled electrodes, pass through NPT joint with 1/4 " water pipe series connection, pipeline last and above water cooled holder is connected, and guarantees that pipeline is water-tight under 82PSI hydraulic pressure.
The specific embodiment of patent of the present invention elaborates the content of patent of the present invention.For persons skilled in the art, any apparent change of under the prerequisite that does not deviate from patent spirit of the present invention, it being done, all forms the infringement to patent of the present invention, will bear corresponding legal liabilities.

Claims (5)

1. a device for two filament plasma floods, this device is mainly used in the electronics neutralization of the ion beam of low energy large beam ion injection end.This device mainly comprises following part, and 2 ion sources and extraction system (1), comprise filament, arc chamber cavity, magnet, extraction electrode, intercell connector; Plenum system (2), comprises valve, joint, pipe; 4 water cooled electrodes (3), comprise hectometre the end of a thread, female lead terminal, insulation pressure ring, sealing ring, pilot protection cover etc.; Cooling system (4), mainly forms circulation line by quick connector, NPT joint, water cooling tube and pipeline etc. and carrys out cooling system heat generating components; Support system (5) is installed, comprises flange, insulating flange, water cooled holder.It is characterized in that adopting two filamentray structures, shower effects is better compared with single filament, efficiency is higher; This apparatus structure compactness, adopts modular design simultaneously, installation and maintenance aspect, and the cooling system of appropriate design can extend the useful life of this device.This device is used in large beam ion injection device, and practical effect is better.
2. the device of the ion beam horizontal focusing of claim 1, wherein have two described ion sources and extraction system (1), mainly by extraction electrode (6), filament (7), magnet (8), arc chamber (9), lamp filament (10) filament connecting rod (11) etc.; Arc chamber (9) one sides have a hole ventilation to enter arc chamber, and there are two blocks of magnet (8) arc chamber (9) both sides, and its effect is to produce magnetic field to make the electron emission motion of spinning, increase collision gas molecule probability; Lamp filament (10) filament connecting rod (11) is used for clamping installation filament.
3. the device of the ion beam horizontal focusing of claim 1, wherein plenum system (2), mainly by the steel pipe of supplying gas, welding point, air valves etc. are welded, wherein main snorkel caliber is 1/4 ", air inlet caliber 1/8 ".
4. the device of the ion beam horizontal focusing of claim 1; wherein water cooled electrode (3); mainly by lead riser protective sleeve (12); female lead riser (13); hectometre line terminals (14); insulating case (15); insulation pressure ring (16); O RunddichtringO (17) composition; female lead riser (13) is connected with hectometre line terminals (14) elasticity; by pluggable mode installing/dismounting, in hectometre line terminals (14), be processed with through hole be used for water flowing cooling self.
5. the device of the ion beam horizontal focusing of claim 1, wherein cooling system (4), mainly, by mainly being formed by quick connector, NPT joint, water pipe and pipeline etc., between 4 water cooled electrodes, pass through NPT joint with 1/4 " water pipe series connection, pipeline last and above water cooled holder is connected.
CN201310304592.1A 2013-07-18 2013-07-18 Dual-filament plasma shower device Pending CN103794453A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310304592.1A CN103794453A (en) 2013-07-18 2013-07-18 Dual-filament plasma shower device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310304592.1A CN103794453A (en) 2013-07-18 2013-07-18 Dual-filament plasma shower device

Publications (1)

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CN103794453A true CN103794453A (en) 2014-05-14

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105206492A (en) * 2014-06-18 2015-12-30 上海华力微电子有限公司 Device for improving ribbon ion beam uniformity
CN106653529A (en) * 2016-10-31 2017-05-10 中国电子科技集团公司第四十八研究所 Wide-beam bar ion source
CN109881174A (en) * 2019-01-09 2019-06-14 伟业智芯(北京)科技有限公司 The double filament averagers of ion beam apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1397151A (en) * 2000-02-01 2003-02-12 英特维克公司 Plasma processing system and method
CN101038869A (en) * 2006-03-17 2007-09-19 北京中科信电子装备有限公司 Water-cooling plasma shower
CN101043785A (en) * 2006-03-22 2007-09-26 北京中科信电子装备有限公司 Heater lead mechanism for plasma shower
EP2426692A2 (en) * 2000-11-30 2012-03-07 Semequip, Inc. Ion source

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1397151A (en) * 2000-02-01 2003-02-12 英特维克公司 Plasma processing system and method
EP2426692A2 (en) * 2000-11-30 2012-03-07 Semequip, Inc. Ion source
CN101038869A (en) * 2006-03-17 2007-09-19 北京中科信电子装备有限公司 Water-cooling plasma shower
CN101043785A (en) * 2006-03-22 2007-09-26 北京中科信电子装备有限公司 Heater lead mechanism for plasma shower

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105206492A (en) * 2014-06-18 2015-12-30 上海华力微电子有限公司 Device for improving ribbon ion beam uniformity
CN106653529A (en) * 2016-10-31 2017-05-10 中国电子科技集团公司第四十八研究所 Wide-beam bar ion source
CN106653529B (en) * 2016-10-31 2018-07-24 中国电子科技集团公司第四十八研究所 A kind of bar shaped ion source of wide beam stream
CN109881174A (en) * 2019-01-09 2019-06-14 伟业智芯(北京)科技有限公司 The double filament averagers of ion beam apparatus

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Application publication date: 20140514