SG10201602785TA - E-beam enhanced decoupled source for semiconductor processing - Google Patents

E-beam enhanced decoupled source for semiconductor processing

Info

Publication number
SG10201602785TA
SG10201602785TA SG10201602785TA SG10201602785TA SG10201602785TA SG 10201602785T A SG10201602785T A SG 10201602785TA SG 10201602785T A SG10201602785T A SG 10201602785TA SG 10201602785T A SG10201602785T A SG 10201602785TA SG 10201602785T A SG10201602785T A SG 10201602785TA
Authority
SG
Singapore
Prior art keywords
semiconductor processing
beam enhanced
decoupled source
decoupled
source
Prior art date
Application number
SG10201602785TA
Inventor
John Patrick Holland
Peter L G Ventzek
Harmeet Singh
Jun Shinagawa
Akira Koshiishi
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/084,325 external-priority patent/US20120258555A1/en
Priority claimed from US13/104,923 external-priority patent/US8900402B2/en
Priority claimed from US13/357,044 external-priority patent/US20120258607A1/en
Priority claimed from US13/356,962 external-priority patent/US9111728B2/en
Priority claimed from US13/357,003 external-priority patent/US9177756B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201602785TA publication Critical patent/SG10201602785TA/en

Links

SG10201602785TA 2011-04-11 2012-04-10 E-beam enhanced decoupled source for semiconductor processing SG10201602785TA (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US13/084,325 US20120258555A1 (en) 2011-04-11 2011-04-11 Multi-Frequency Hollow Cathode and Systems Implementing the Same
US13/104,923 US8900402B2 (en) 2011-05-10 2011-05-10 Semiconductor processing system having multiple decoupled plasma sources
US201161555639P 2011-11-04 2011-11-04
US13/357,044 US20120258607A1 (en) 2011-04-11 2012-01-24 E-Beam Enhanced Decoupled Source for Semiconductor Processing
US13/356,962 US9111728B2 (en) 2011-04-11 2012-01-24 E-beam enhanced decoupled source for semiconductor processing
US13/357,003 US9177756B2 (en) 2011-04-11 2012-01-24 E-beam enhanced decoupled source for semiconductor processing

Publications (1)

Publication Number Publication Date
SG10201602785TA true SG10201602785TA (en) 2016-05-30

Family

ID=49919072

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201602780VA SG10201602780VA (en) 2011-04-11 2012-04-10 E-beam enhanced decoupled source for semiconductor processing
SG10201602785TA SG10201602785TA (en) 2011-04-11 2012-04-10 E-beam enhanced decoupled source for semiconductor processing
SG2013071790A SG193943A1 (en) 2011-04-11 2012-04-10 E-beam enhanced decoupled source for semiconductor processing

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201602780VA SG10201602780VA (en) 2011-04-11 2012-04-10 E-beam enhanced decoupled source for semiconductor processing

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2013071790A SG193943A1 (en) 2011-04-11 2012-04-10 E-beam enhanced decoupled source for semiconductor processing

Country Status (4)

Country Link
JP (2) JP6001641B2 (en)
KR (1) KR101900527B1 (en)
CN (1) CN103620729B (en)
SG (3) SG10201602780VA (en)

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CN103915304B (en) * 2014-03-18 2016-08-17 京东方科技集团股份有限公司 A kind of plasma etching apparatus and dry etching equipment
CN105448635B (en) * 2014-08-28 2018-01-09 北京北方华创微电子装备有限公司 Atomic layer etching device and use its atomic layer lithographic method
US10475626B2 (en) * 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
US10032604B2 (en) * 2015-09-25 2018-07-24 Applied Materials, Inc. Remote plasma and electron beam generation system for a plasma reactor
US20170092470A1 (en) * 2015-09-28 2017-03-30 Applied Materials, Inc. Plasma reactor for processing a workpiece with an array of plasma point sources
US9799491B2 (en) * 2015-10-29 2017-10-24 Applied Materials, Inc. Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching
KR102455239B1 (en) 2017-10-23 2022-10-18 삼성전자주식회사 apparatus for processing plasma, manufacturing system of semiconductor device and manufacturing method of the same
CN112534542B (en) * 2018-07-27 2024-08-23 应用材料公司 Remote capacitively coupled plasma source with improved ion blocker
KR102661733B1 (en) 2018-07-31 2024-04-29 주성엔지니어링(주) Apparatus for processing substrate using multiple plasma

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JP2991192B1 (en) * 1998-07-23 1999-12-20 日本電気株式会社 Plasma processing method and plasma processing apparatus
JP3433703B2 (en) * 1999-09-03 2003-08-04 日新電機株式会社 Ion source device and vacuum processing device
JP2003031175A (en) * 2001-07-12 2003-01-31 Hitachi Ltd Ion beam processing device
FR2842387B1 (en) * 2002-07-11 2005-07-08 Cit Alcatel HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION
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Also Published As

Publication number Publication date
JP6001641B2 (en) 2016-10-05
KR20140024375A (en) 2014-02-28
SG193943A1 (en) 2013-11-29
KR101900527B1 (en) 2018-09-19
JP6271659B2 (en) 2018-01-31
SG10201602780VA (en) 2016-05-30
JP2014513427A (en) 2014-05-29
JP2017022392A (en) 2017-01-26
CN103620729A (en) 2014-03-05
CN103620729B (en) 2016-10-12

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