CN105448635B - Atomic layer etching device and use its atomic layer lithographic method - Google Patents

Atomic layer etching device and use its atomic layer lithographic method Download PDF

Info

Publication number
CN105448635B
CN105448635B CN201410433208.2A CN201410433208A CN105448635B CN 105448635 B CN105448635 B CN 105448635B CN 201410433208 A CN201410433208 A CN 201410433208A CN 105448635 B CN105448635 B CN 105448635B
Authority
CN
China
Prior art keywords
atomic layer
plasma
gas
generating device
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410433208.2A
Other languages
Chinese (zh)
Other versions
CN105448635A (en
Inventor
罗巍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing North Microelectronics Co Ltd
Original Assignee
Beijing North Microelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing North Microelectronics Co Ltd filed Critical Beijing North Microelectronics Co Ltd
Priority to CN201410433208.2A priority Critical patent/CN105448635B/en
Priority to TW104126985A priority patent/TWI620260B/en
Priority to KR1020177008420A priority patent/KR101917304B1/en
Priority to PCT/CN2015/087512 priority patent/WO2016029817A1/en
Priority to SG11201701159QA priority patent/SG11201701159QA/en
Priority to JP2017511633A priority patent/JP6454409B2/en
Publication of CN105448635A publication Critical patent/CN105448635A/en
Application granted granted Critical
Publication of CN105448635B publication Critical patent/CN105448635B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)

Abstract

The invention discloses a kind of atomic layer etching device and use its atomic layer lithographic method.Atomic layer etching device includes：Reaction cavity, baffle assembly, the first plasma generating device and the second plasma generating device.Reaction chamber is separated into upper chamber and lower chambers by baffle assembly, and baffle assembly includes the dividing plate that can be grounded or be connected with DC bias power, to prevent the charged particle in upper chamber from entering lower chambers and allow active neutral particle to enter lower chambers.The gas that first plasma generating device is used to will go into upper chamber is excited as plasma.The gas that second plasma generating device is used to will go into bottom chamber is excited as plasma.The atomic layer etching device of the present invention, traditional reacting gas is substituted using the absorption of activated adoption chemistry of particles and adsorbed, etch rate can be significantly improved, shorten the etching period time, the usage amount of etching reaction gas is saved, reduce process costs.

Description

Atomic layer etching device and use its atomic layer lithographic method
Technical field
The present invention relates to etching field, more particularly, to a kind of atomic layer etching device and uses its atomic layer etching side Method.
Background technology
At present, technique for atomic layer deposition (Atomic Layer Deposition, ALD) has been widely used in semiconductor It is a kind of technique for preparing the high K gate dielectric layers of field-effect transistor of main flow in industry.Corresponding subtractive processes, it is former Sublayer lithographic technique (Atomic Layer Etching, ALE) is developed also with the demand of application, earliest using Cl2 Absorption and the scheme of the process of electron beam lithography two alternately realize that GaAs atomic layers etch.Atomic layer etching in correlation technique The shortcomings of etching period is long, etching efficiency is low, equipment is complicated be present in technology.
The content of the invention
It is contemplated that at least solves one of technical problem in correlation technique to a certain extent.Therefore, the present invention One purpose is to propose a kind of atomic layer etching device, significantly improves etch rate, shorten the etching period time.Also, should Atomic layer etching device is simple in construction.
It is another object of the present invention to propose a kind of atomic layer lithographic method using atomic layer etching device, significantly Etch rate is improved, shortens the etching period time.
Atomic layer etching device according to embodiments of the present invention, including：Reaction cavity, the reaction cavity is interior to have reaction Chamber；Baffle assembly, the baffle assembly are located in the reaction chamber and the reaction chamber are separated into upper chamber with Chamber, the baffle assembly include at least one dividing plate, and the dividing plate is logical provided with what is penetrated on the thickness direction of the dividing plate Hole, the dividing plate can be grounded or be connected with DC bias power, to prevent described in the charged particle entrance in the upper chamber Lower chambers and permission active neutral particle enter the lower chambers, and the upper chamber, which has, to be used to supply into the reaction chamber The air inlet of gas；The lower chambers have the support meanss for being used for placing slide glass, and for being evacuated out of described reaction chamber Exhaust outlet；First plasma generating device, first plasma generating device are used to will go into the upper chamber Interior gas is excited as plasma；Second plasma generating device, second plasma generating device are used to enter The gas entered to the bottom chamber is excited as plasma.
Atomic layer etching device according to embodiments of the present invention, active neutral grain can be realized by being provided with baffle assembly Son is separated with charge atom, and the absorption of traditional reacting gas is substituted using the absorption of activated adoption chemistry of particles, on the one hand can be with Etch rate is significantly improved, shortens the etching period time, and etching reaction gas can be significantly saved in the chemisorbed stage The usage amount of body, reduces process costs.On the other hand, using plasma ion desorption substitutional ion beam/neutral particle Beam desorption, ion beam/complexity caused by neutral ion beam generation device can be avoided so that atomic layer etching device knot Structure is simple and reliable, is advantageous to large-scale production and application.
In addition, atomic layer etching device according to the above embodiment of the present invention can also have technology additional as follows special Sign：
In some embodiments of the invention, the dividing plate is multiple, and the multiple dividing plate is in the vertical direction each other It is arranged at intervals, is provided with the dividing plate ground connection in the top.
Alternatively, the spacing between adjacent separator is 0.1mm~10mm.
Alternatively, the thickness of the dividing plate is 0.5mm~20mm.
In some specific examples of the present invention, the radial dimension of the through hole is 10 μm~10mm.
Alternatively, the dividing plate is the metalwork of metalwork, graphite piece or coating.
In some embodiments of the invention, the top of the reaction chamber is provided with medium window, first plasma Generation device includes coil and the first radio-frequency power supply, and the coil is located on the medium window, and the coil is penetrated with described first Frequency power is connected.
In a particular embodiment of the present invention, second plasma generating device includes the second radio-frequency power supply, described Second radio-frequency power supply is connected with the support meanss.
According to some embodiments of the present invention, the first air inlet is provided with the top of the upper chamber, for the reaction chamber Interior is passed through reacting gas；Upper chamber's sidepiece is provided with the second air inlet, for being passed through purge gass into the reaction chamber Body.
Atomic layer lithographic method using atomic layer etching device according to embodiments of the present invention, the atomic layer etching dress Atomic layer etching device according to the above embodiment of the present invention is set to, is comprised the following steps：S1：The slide glass of question response is positioned over In support meanss；S2：Reacting gas is passed into reaction chamber, the first plasma generating device of startup will go into described Reacting gas in upper chamber is excited as plasma, and the active neutral particle in its plasma is by baffle assembly from upper Chamber enters bottom chamber and absorption is on the surface of slide glass, and the charged particle in plasma is prevented from institute by baffle assembly State upper chamber and enter the lower chambers；S3：Stopping is passed through reacting gas, and closes the first plasma generating device；S4：It will blow Scavenging body is passed into reaction chamber, and extracts residue out through exhaust outlet out of reaction chamber；S5：Stopping is passed through purge gas； S6：Reacting gas is passed into reaction chamber, starts the second plasma generating device and will go into the bottom chamber Reacting gas is excited as plasma, to be irradiated to the slide surface for being adsorbed with active neutral particle；S7：Stopping is passed through anti- Gas is answered, and closes the second plasma generating device；S8：Purge gas is passed into reaction chamber and out of reaction chamber Residue is extracted out through exhaust outlet；S9：Stopping is passed through purge gas；Repeat the above steps S2~S8, until etching depth reaches pre- If value.
Atomic layer lithographic method according to embodiments of the present invention, adsorbed by using activated adoption chemistry of particles and substitute tradition Reacting gas adsorbs, and on the one hand can significantly improve etch rate, shortens the etching period time, and in chemisorbed stage energy Enough usage amounts for significantly saving etching reaction gas, reduce process costs.On the other hand, using reacting gas plasma Ion desorption substitutional ion beam/eutral particle beam desorption, can avoid ion beam/eutral particle beam generation device from being brought Complexity so that using above-mentioned atomic layer lithographic method atomic layer etching device it is simple and reliable for structure, be advantageous to advise greatly Mould production application.
In a particular embodiment of the present invention, the top of the reaction chamber is provided with medium window, first plasma Generation device includes coil and the first radio-frequency power supply, and the coil is located on the medium window, and the coil is penetrated with described first Frequency power is connected, and the step S2 starts the first plasma generating device as the power output of first radio-frequency power supply is set 100W~1000W is set to, it is by the output of first radio-frequency power supply that the step S3, which closes the first plasma generating device, Power setting is 0.
According to some embodiments of the present invention, second plasma generating device includes the second radio-frequency power supply, described Second radio-frequency power supply is connected with the support meanss, and it is by described second that the step S5, which starts the second plasma generating device, The power output of radio-frequency power supply is arranged to 30W~100W, and it is by described in that the step S7, which closes the second plasma generating device, The power output of second radio-frequency power supply is arranged to 0.
Specifically, the reacting gas of the step S2 is CF4, CHF3, CH2F2, CH3F, Cl2, HF, HCl, HBr, SF6, At least one of NF3, Br2, BCl3, SiCl4, O2.
Preferably, the reacting gas of the step S2 is Cl2, and flow is 5~200sccm.
In some specific embodiments of the present invention, the reacting gas of the step S6 is inert gas.
Specifically, the inert gas of the step S6 is He, Ne, Ar, at least one of Kr, Xe.
Preferably, step S6 reacting gas is He, and flow is 10~200sccm.
In some embodiments of the invention, the baffle assembly includes three dividing plates, and three dividing plates are upper and lower It is intervally installed on direction, is provided with being grounded in the dividing plate of the top and bottom, middle dividing plate and Dc bias electricity Source connects.
Specifically, the output voltage of the DC bias power is 5~100V.
Preferably, the output voltage of the DC bias power is 10~50V.
Brief description of the drawings
Fig. 1 is the schematic diagram according to the atomic layer etching device of the embodiment of the present invention；
Fig. 2 is the schematic diagram according to the baffle assembly of the embodiment of the present invention；
Fig. 3 is the flow chart according to the lithographic method of the embodiment of the present invention；
Fig. 4 is the process schematic according to the lithographic method of the embodiment of the present invention.
Reference：
Atomic layer etching device 100,
Reaction cavity 1, reaction chamber 10, upper chamber 213, lower chambers 214, nozzle of air supply 204, the first air inlet 216, Two air inlets 215, exhaust outlet 217,
Baffle assembly 203, dividing plate 203, through hole 302, first layer dividing plate 303a, second layer dividing plate 303b, third layer dividing plate 303c、
Coil 205, medium window 206, the first radio-frequency power supply 209, the first adaptation 208,
Sweep module 207, draw-out device 212, support meanss 202, the second radio-frequency power supply 211, the second adaptation 210, load Piece 201, plasma 402, active neutral particle 403.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and is not considered as limiting the invention.
In the description of the invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer ", " axial direction ", The orientation or position relationship of the instructions such as " radial direction ", " circumference " are based on orientation shown in the drawings or position relationship, merely to just In the description present invention and simplify description, rather than instruction or imply signified device or element must have specific orientation, with Specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can be expressed or Implicitly include one or more this feature.In the description of the invention, " multiple " are meant that two or more, Unless otherwise specifically defined.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " fixation " etc. Term should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integrally；Can be that machinery connects Connect or electrically connect；Can be joined directly together, can also be indirectly connected by intermediary, can be in two elements The connection in portion or the interaction relationship of two elements.For the ordinary skill in the art, can be according to specific feelings Condition understands the concrete meaning of above-mentioned term in the present invention.
Atomic layer etching device 100 according to embodiments of the present invention, atomic layer etching are described in detail below with reference to Fig. 1-Fig. 4 Device 100 performs etching to slide glass 201.Wherein slide glass 201 can be the single element slide glass material pieces such as Si, Ge, C or The compound slide glass material pieces such as GaAs, GaN.
As shown in figure 1, atomic layer etching device 100 according to embodiments of the present invention, including：Reaction cavity 1, baffle assembly 203rd, the first plasma generating device, the plasma generating device of support meanss 202 and second.
There is reaction chamber 10 in reaction cavity 1.Baffle assembly 203 is located in reaction chamber 10 and divides reaction chamber 10 Upper chamber 213 and lower chambers 214 are divided into, baffle assembly 203 includes at least one dividing plate 303, and dividing plate 303 is provided with the dividing plate The through hole 302 run through on 303 thickness direction, dividing plate 303 can be grounded or be connected with DC bias power, to prevent upper chamber Charged particle in 213 enters lower chambers 214 and allows active neutral particle to enter lower chambers 214, in short, baffle assembly 203 are configured to prevent the charged particle in upper chamber 213 to enter lower chambers 214 and allow active neutral particle to enter lower chambers 214, in other words, baffle assembly 203 allows active neutral particle to pass through.It should be noted that the quantity and dividing plate of dividing plate 303 303 shape is not specifically limited, if ensure baffle assembly 203 can play prevent charged particle by and allow activity in The effect that property particle passes through.
Upper chamber 213 has the air inlet for being used for the supply gas into reaction chamber 10, it is necessary to illustrate, gas Including reacting gas and purge gas, that is to say, that not only will into reaction chamber 10 supply response gas, will also be to reaction chamber Supply purge gas in room 10.
Lower chambers 214 have the support meanss 202 for being used for placing slide glass 201, and lower chambers 214, which also have, to be used for from reaction chamber The exhaust outlet 217 of pumping in room 10.In the specific example of the present invention, it can be connected using draw-out device 212 with exhaust outlet 217 To be evacuated out of reaction chamber 10.Preferably, draw-out device 212 is vacuum pump group.
The gas that first plasma generating device is used to will go into upper chamber 213 is excited as plasma 402, tool Body, plasma 402 includes charged particle and active neutral particle 403.It should be noted that the first plasma produces dress Put and be formed as arbitrary structures, as long as ensureing to enter in the presence of the first plasma generating device in reaction chamber 10 Gas can be excited as plasma 402.
Second plasma generating device is used for the gas that will go into lower chambers 214 and excited as plasma, similarly, Second plasma generating device can also be arbitrary structures.
Specifically, using the lithographic method of atomic layer etching device 100 according to embodiments of the present invention, including following step Suddenly：
Step S11：The slide glass 201 of the question response of clean surface is placed in support meanss 202 first.
Step S12：In the chemisorbed stage, reacting gas is passed into reaction chamber 10, starts the production of the first plasma The reacting gas that generating apparatus will go into upper chamber 213 excites is highly dense for plasma 402, the wherein plasma 402 Plasma is spent, therefore upper chamber 213 is referred to as high-density plasma and produces chamber.Because baffle assembly 203 prevents Charged particle in upper chamber 213 enters lower chambers 214 and allows active neutral particle 403 to enter lower chambers 214, therefore dividing plate Charged particle is limited in upper chamber 213 by component 203, caused active neutral particle 403 under the drive of air-flow by every Board component 203 enters in lower chambers 214 and quick adsorption is on the surface of slide glass 201.
Step S13：Purging residual reacting gas stage, stopping are passed through reacting gas, and close the first plasma and produce Device, purge gas is entered in reaction chamber 10, reaction of the purge gas to residual in upper chamber 213 and lower chambers 214 Gas is purged, while passes through the reacting gas and purge gas of the residual in the abstraction reaction chamber 10 of exhaust outlet 217.
Step S14：Desorption etch stages, reacting gas is passed into reaction chamber 10, starts the second plasma The reacting gas that generation device will go into lower chambers 214 is excited as plasma, with to being adsorbed with active neutral particle The surface of slide glass 201 is irradiated.It should wherein be ensured by controlling the second plasma generating device by plasma The energy hole of ion 405 is only reacting with being adsorbed with the surface atom of active neutral particle 403, interrupts the table of slide glass 201 Face atomic bonding, but e insufficient to that significant physical sputtering, i.e. reacting gas in lower chambers 214 occurs with sub-surface atom Plasma is low-energy plasma.
Step S15：Purge gas is passed into reaction chamber 10, finally taken out out of reaction chamber 10 through exhaust outlet 217 Go out residue.
By step S11~step S15, slide glass 201 is etched layer of surface atomic layer, in order to realize the quarter of different depth Erosion, by repeat step S12~S15, until etching depth reaches preset value, you can realize the etching technics of atomic layer accuracy.
Atomic layer etching device 100 according to embodiments of the present invention, activity can be realized by being provided with baffle assembly 203 Neutral particle is separated with charge atom, and substituting traditional reacting gas using the absorption of activated adoption chemistry of particles adsorbs, a side Face can significantly improve etch rate, shorten the etching period time, and can significantly save etching in the chemisorbed stage The usage amount of reacting gas, reduces process costs.On the other hand, using purge gas plasma ion desorption substitute from Beamlet/eutral particle beam desorption, ion beam/complexity caused by neutral ion beam generation device can be avoided so that former Sublayer etching device 100 is simple and reliable for structure, is advantageous to large-scale production and application.
The atomic layer etching device 100 according to the specific embodiment of the invention is described in detail below with reference to Fig. 1, Fig. 2 and Fig. 4.
As shown in figure 1, atomic layer etching device 100 according to embodiments of the present invention includes：Reaction cavity 1, baffle assembly 203rd, the first plasma generating device, sweep module 207, draw-out device 212, the production of the plasma of support meanss 202 and second Generating apparatus.
There is reaction chamber 10, baffle assembly 203 is located in reaction chamber 10 so that reaction chamber 10 to be divided in reaction cavity 1 Be divided into upper chamber 213 and lower chambers 214, the sidepiece of upper chamber 213 be provided with it is being connected with sweep module 207, for reaction chamber The second air inlet 215 of supply purge gas is passed through in room 10, the roof of upper chamber 213 is provided with the first air inlet 216, is used for Reacting gas is passed through into reaction chamber 10, nozzle of air supply 204 is provided with the first air inlet 216.Certainly it is worth understanding, the Two air inlets 215 can also be provided in the side wall of lower chambers 214.Divided by the first air inlet 216 and the second air inlet 215 Open, the emptying effect to the residual reacting gas of 10 each corner of reaction chamber can be improved, avoided to next cycle Purge gas desorption has bad influence.
As shown in Fig. 2 baffle assembly 203 includes three dividing plates 303 being intervally installed in the vertical direction, dividing plate 303 thickness are 0.5mm~20mm.Spacing between adjacent separator 303 is 0.1mm~10mm.With the plasma in upper chamber 213 The dividing plate 303 that body 402 directly contacts is grounded, and other two dividing plate 303 is grounded or is connected with DC bias power, each dividing plate 303 are provided with the through hole 302 penetrated on the thickness direction of the dividing plate 303, and it is identical to be uniformly distributed size on each dividing plate 303 Through hole 302, the shape of through hole 302 can be with rounded, cuboid or other shapes, the radial dimension of each through hole 302 10 μm~10mm.Each dividing plate 303 is the metalwork of metalwork (such as aluminium, stainless steel), graphite piece or coating, such as every Plate 303 can be anodised aluminium, include Y2O3, TIN, aluminum component of Si coatings etc..Preferably, the material of dividing plate 303 uses graphite.
Preferably, baffle assembly 203 includes first layer dividing plate 303a, second layer dividing plate 303b and third layer dividing plate 303c, In addition to contacting except first layer dividing plate 303a because directly with the plasma 402 in upper chamber 213 and must be grounded, second layer dividing plate 303b and third layer dividing plate 303c may be selected ground connection or is connected with DC bias power.As shown in Fig. 2 second layer dividing plate 303b with Grid bias power supply connects, third layer dividing plate 303c ground connection.The effect of baffle assembly 203 mainly repels and trapped charged particle, Hinder charged particle to leak into lower chambers 214, but active neutral particle 403 can be allowed to reach slide glass through through hole 302 201 surfaces.
Need to illustrate, the quantity not limited to this of dividing plate 303, the quantity of dividing plate 303 can also be one, two Or more than three, that is to say, that dividing plate 303 is multiple, and multiple dividing plates 303 are intervally installed in the vertical direction, wherein The dividing plate 303 for being arranged on the top is grounded.
Support meanss 202 are located in lower chambers 214, it is preferable that the bottom of support meanss 202 and baffle assembly 203 every The distance between plate is 5cm~50cm, and draw-out device 212 and the exhaust outlet 217 of lower chambers 214 are joined directly together.
Preferably, the top of reaction chamber 10 is provided with medium window, and the first plasma generating device includes coil 205 and first Radio-frequency power supply 209, the first adaptation 208 can also be included, coil 205 is located on medium window 206, the radio frequency of coil 205 and first Power supply 209 is connected, and is connected with the first adaptation 208 between the radio-frequency power supply 209 of coil 205 and first, that is to say, that the first radio frequency Power supply 209 is connected by the first adaptation 208 with coil 205, wherein, the material of medium window 206 is the media such as ceramics, quartz, Medium window 206 plays energy coupling effect.When coil 205 is inductance coil, the first radio-frequency power supply 209 works to coil 205 Radio-frequency power is provided, coil 205 and medium window 206 coordinate by by a manner of inductive coupled by the RF energy coupling on coil 205 Conjunction is loaded on reacting gas, is allowed to produce plasma 402, i.e., when coil 205 is inductance coil, caused plasma For inductive coupled plasma.Certainly it is worth understanding, the structure not limited to this of the first plasma generating device, first etc. Gas ions generation device can be the plasma source of other structures, can produce such as capacitively coupled plasma, microwave Gas ions, continuumpiston, pulsed plasma etc..
In the specific example of the present invention, the second plasma generating device includes the second radio-frequency power supply 211, the second radio frequency Power supply 211 is connected with support meanss 202 to provide radio-frequency power to support meanss 202.Wherein need to illustrate, in order to Ensure that the radio-frequency power that the second radio-frequency power supply 211 provides can meet different use demands, the second plasma generating device The second adaptation 210 can also be included, the second radio-frequency power supply 211 is connected by the second adaptation 210 with support meanss 202.
The atomic layer using atomic layer etching device according to embodiments of the present invention is described in detail below with reference to Fig. 3 and Fig. 4 Lithographic method, comprise the following steps：
S1：The slide glass of question response is positioned in support meanss.
S2：Reacting gas is passed into reaction chamber, starts the first plasma generating device and will go into upper chamber Interior reacting gas is excited as plasma, and the active neutral particle in its plasma is entered by baffle assembly from upper chamber Enter to bottom chamber and absorption is on the surface of slide glass, the charged particle in plasma is prevented to enter from upper chamber by baffle assembly Enter lower chambers, in other words, reaction chamber is separated into upper chamber and lower chambers by baffle assembly, and baffle assembly, which has, prevents upper chamber Interior charged particle enters lower chambers and allows effect of the active neutral particle into lower chambers.In the specific example of the present invention In, reacting gas is injected in upper chamber by the nozzle of air supply being arranged in the first air inlet at the top of upper chamber.Specifically, Reacting gas in step S2 is CF4, CHF3, CH2F2, CH3F, Cl2, HF, HCl, HBr, SF6, NF3, Br2, BCl3, At least one of SiCl4, O2.Preferably, step S2 reacting gas is Cl2, and flow is 5~200sccm.
S3：Stopping is passed through reacting gas, and closes the first plasma generating device.
S4：Purge gas is passed into reaction chamber, and residue is extracted out through exhaust outlet out of reaction chamber.In this hair In bright specific example, purge gas is passed through by the second air inlet being arranged on the sidepiece of upper chamber by sweep module Into reaction chamber, and draw-out device is taken to extract residue out.
S5：Stopping is passed through purge gas.
S6：Reacting gas is passed into reaction chamber, starts the second plasma generating device and will go into lower chambers Interior reacting gas is excited as plasma, to be irradiated to the slide surface for being adsorbed with active neutral particle.
S7：Stopping is passed through reacting gas, and closes the second plasma generating device；
S8：Purge gas is passed into reaction chamber and extracts residue out through exhaust outlet out of reaction chamber；
S9：Stopping is passed through purge gas；Repeat the above steps S2~S8, until etching depth reaches preset value.In this hair In bright specific example, step S6 reacting gas is inert gas.More specifically, step S6 inert gas is He, Ne, At least one of Ar, Kr, Xe.Preferably, step S6 reacting gas is He, and flow is 10~200sccm.
Atomic layer lithographic method according to embodiments of the present invention, adsorbed by using activated adoption chemistry of particles and substitute tradition Reacting gas adsorbs, and on the one hand can significantly improve etch rate, shortens the etching period time, and in chemisorbed stage energy Enough usage amounts for significantly saving etching reaction gas, reduce process costs.On the other hand, using reacting gas plasma Ion desorption substitutional ion beam/eutral particle beam desorption, can avoid ion beam/eutral particle beam generation device from being brought Complexity so that using above-mentioned atomic layer lithographic method atomic layer etching device it is simple and reliable for structure, be advantageous to advise greatly Mould production application.
In a particular embodiment of the present invention, the top of reaction chamber is provided with medium window, the first plasma generating device Including coil and the first radio-frequency power supply, coil is located on medium window, and coil is connected with the first radio-frequency power supply, and step S2 starts first Plasma generating device is that the power output of the first radio-frequency power supply is arranged into 100W~1000W, and step S3 closes first etc. Gas ions generation device is that the power output of the first radio-frequency power supply is arranged into 0.So as to by controlling the first radio-frequency power supply to export Radio-frequency power reacting gas is excited as high-density plasma.
In the specific example of the present invention, the second plasma generating device includes the second radio-frequency power supply, the second radio frequency electrical Source is connected with support meanss, starts the second plasma generating device in step S5 as the power output of the second radio-frequency power supply is set 30W~100W is set to, step S7 closes the second plasma generating device as the power output of second radio-frequency power supply is set It is set to 0.So as to by controlling the radio-frequency power that the second radio-frequency power supply exports to ensure that reacting gas plasma is low-power plasma Body.
According to some specific embodiments of the present invention, baffle assembly includes three dividing plates, and three dividing plates are in above-below direction On be intervally installed, be provided with being grounded in the dividing plate of the top and bottom, middle dividing plate and DC bias power connect Connect.Specifically, the output voltage of DC bias power is 5~100V.Preferably, the output voltage of DC bias power be 10~ 50V。
It is right using the atomic layer etching device 100 according to the specific embodiment of the invention to be described in detail below with reference to Fig. 1-Fig. 4 The atomic layer lithographic method that slide glass 201 performs etching, specifically comprises the following steps：
Step S11：The slide glass 201 of clean surface is provided, and placed it in support meanss 202.
Step S12：In the chemisorbed stage, reacting gas is passed through reaction chamber 10 by nozzle of air supply 204, in this implementation The etching reaction gas selected is Cl2 in example, and flow is 5sccm~200sccm, the pressure control of reaction chamber 10 0.5mT~ 100mT.Because the first radio-frequency power supply power is 100~1000W, the second radio-frequency power supply power loaded in support meanss 202 is 0W, so reacting gas can produce chamber 213 (i.e. upper chamber 213) in high-density plasma, produce high-density plasma Body 402, Cl2 can be ionized and decomposed under the exciting of RF energy, wherein producing particle mainly has a Cl ions, Cl atoms, Cl2 molecules and electronics etc., at this moment first layer dividing plate 303a and third layer dividing plate 303c are grounded, major part can be captured Charged particle, second layer dividing plate 303b are connected with Dc bias, and voltage is arranged on 5~100V, preferably 10~50V, can be to energy The higher Cl ions of amount have repulsive interaction, are limited in high-density plasma and produced in chamber i.e. upper chamber 213 so that production Raw low energy active neutral particle 403 (excitation state Cl2, excitation state Cl atom) quick adsorption under the drive of air-flow carries in cleaning The surface of piece 201, the rate of adsorption are much larger than traditional gas absorption.
Step S13：Purging residual reacting gas, inert gas is via sweep module 207 to 10 inner residual of reaction chamber Reacting gas is purged, and discharges atomic layer etching device 100 eventually through draw-out device 212.
Step S14：Desorption etch stages, reacting gas is passed into reaction chamber 10 by nozzle of air supply 204, at this The reacting gas selected in embodiment is inert gas He, and flow is 10~200sccm, and the pressure control of reaction chamber 10 exists 200mT~4Torr.Because the first radio-frequency power supply power power is 0W, the second radio-frequency power supply power loaded in support meanss is 30W~100W, thus reacting gas can low-energy plasma produce chamber and be in lower chambers 214 produce low energy (< 100eV) plasma 404, irradiated with the surface of slide glass 201 to adsorption gas molecule, by controlling the second radio-frequency power supply Power, the energy hole of ion 405 in plasma 404 can only sent out with being adsorbed with the surface atom of active neutral particle Raw reaction, interrupts slide surface atomic bonding, but e insufficient to that significant physical sputtering occurs with sub-surface atom.
Step S15：Enter reaction chamber 10 via sweep module 207 using purge gas, eventually through draw-out device 212 Empty the etch by-products 406 in reaction chamber 10.
By step S11~S15, slide glass 201 is etched layer of surface atomic layer, in order to realize the etching of different depth, Pass through repeat step S12~S15, you can realize the etching technics of atomic layer accuracy.
In the present invention, unless otherwise clearly defined and limited, fisrt feature can be with "above" or "below" second feature It is that the first and second features directly contact, or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists Second feature " on ", " top " and " above " but fisrt feature are directly over second feature or oblique upper, or be merely representative of Fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " lower section " and " below " can be One feature is immediately below second feature or obliquely downward, or is merely representative of fisrt feature level height and is less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description Point is contained at least one embodiment or example of the present invention.In this manual, to the schematic representation of above-mentioned term not Identical embodiment or example must be directed to.Moreover, specific features, structure, material or the feature of description can be with office Combined in an appropriate manner in one or more embodiments or example.In addition, in the case of not conflicting, the skill of this area Art personnel can be tied the different embodiments or example and the feature of different embodiments or example described in this specification Close and combine.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art within the scope of the invention can be to above-mentioned Embodiment is changed, changed, replacing and modification.

Claims (20)

  1. A kind of 1. atomic layer etching device, it is characterised in that including：
    Reaction cavity, the reaction cavity is interior to have reaction chamber；
    Baffle assembly, the baffle assembly are located in the reaction chamber and the reaction chamber are separated into upper chamber and cavity of resorption Room, the baffle assembly include at least one dividing plate, and the dividing plate is provided with the through hole penetrated on the thickness direction of the dividing plate, The dividing plate ground connection be connected with DC bias power, with prevent the charged particle in the upper chamber enter the lower chambers with Active neutral particle is allowed to enter the lower chambers；
    The upper chamber has the air inlet for being used for the supply gas into the reaction chamber, and first is provided with the top of the upper chamber Air inlet, for being passed through reacting gas into the reaction chamber；
    The lower chambers have the support meanss for being used for placing slide glass, and the exhaust outlet for being evacuated out of described reaction chamber；
    First plasma generating device, first plasma generating device are used for the gas that will go into the upper chamber Body is excited as plasma；
    Second plasma generating device, second plasma generating device are used for the gas that will go into the bottom chamber Body is excited as plasma.
  2. 2. atomic layer etching device according to claim 1, it is characterised in that the dividing plate is multiple and the multiple Dividing plate is intervally installed in the vertical direction, is provided with the dividing plate ground connection in the top.
  3. 3. atomic layer etching device according to claim 2, it is characterised in that the spacing between adjacent separator is 0.1mm ~10mm.
  4. 4. atomic layer etching device according to claim 1, it is characterised in that the thickness of the dividing plate be 0.5mm~ 20mm。
  5. 5. atomic layer etching device according to claim 1, it is characterised in that the radial dimension of the through hole be 10 μm~ 10mm。
  6. 6. atomic layer etching device according to claim 1, it is characterised in that the dividing plate is metalwork or graphite piece.
  7. 7. atomic layer etching device according to claim 1, it is characterised in that the top of the reaction chamber is provided with medium Window, first plasma generating device include coil and the first radio-frequency power supply, and the coil is located on the medium window, institute Coil is stated with first radio-frequency power supply to be connected.
  8. 8. atomic layer etching device according to claim 1, it is characterised in that the second plasma generating device bag The second radio-frequency power supply is included, second radio-frequency power supply is connected with the support meanss.
  9. 9. atomic layer etching device according to claim 1, it is characterised in that upper chamber's sidepiece is provided with the second air inlet Mouthful, for being passed through purge gas into the reaction chamber.
  10. A kind of 10. atomic layer lithographic method using atomic layer etching device as claimed in claim 1, it is characterised in that bag Include following steps：
    S1：The slide glass of question response is positioned in support meanss；
    S2：Reacting gas is passed into reaction chamber, starts the first plasma generating device and will go into the upper chamber Interior reacting gas is excited as plasma, and the active neutral particle in its plasma is entered by baffle assembly from upper chamber Enter to bottom chamber and absorption is on the surface of slide glass, the charged particle in plasma is prevented from the epicoele by baffle assembly Room enters the lower chambers；
    S3：Stopping is passed through reacting gas, and closes the first plasma generating device；
    S4：Purge gas is passed into reaction chamber and extracts residue out through exhaust outlet out of reaction chamber；
    S5：Stopping is passed through purge gas；
    S6：Reacting gas is passed into reaction chamber, starts the second plasma generating device and will go into the lower chambers Interior reacting gas is excited as plasma, to be irradiated to the slide surface for being adsorbed with active neutral particle；
    S7：Stopping is passed through reacting gas, and closes the second plasma generating device；
    S8：Purge gas is passed into reaction chamber and extracts residue out through exhaust outlet out of reaction chamber；
    S9：Stopping is passed through purge gas；
    Repeat the above steps S2~S8, until etching depth reaches preset value.
  11. 11. atomic layer lithographic method according to claim 10, it is characterised in that the top of the reaction chamber, which is provided with, to be situated between Matter window, first plasma generating device include coil and the first radio-frequency power supply, and the coil is located on the medium window, The coil is connected with first radio-frequency power supply, and it is by described first that the step S2, which starts the first plasma generating device, The power output of radio-frequency power supply is arranged to 100W~1000W, and the step S3 closes the first plasma generating device as by institute The power output for stating the first radio-frequency power supply is arranged to 0.
  12. 12. atomic layer lithographic method according to claim 10, it is characterised in that second plasma generating device Including the second radio-frequency power supply, second radio-frequency power supply is connected with the support meanss, and the step S5 starts the second plasma Body generation device is that the power output of second radio-frequency power supply is arranged into 30W~100W, and the step S7 closes second etc. Gas ions generation device is that the power output of second radio-frequency power supply is arranged into 0.
  13. 13. atomic layer lithographic method according to claim 10, it is characterised in that the reacting gas of the step S2 is CF4, CHF3, CH2F2, CH3F, Cl2, HF, HCl, HBr, SF6, NF3, Br2, BCl3, SiCl4, O2At least one of.
  14. 14. atomic layer lithographic method according to claim 13, it is characterised in that the reacting gas of the step S2 is Cl2, and flow is 5~200sccm.
  15. 15. atomic layer lithographic method according to claim 10, it is characterised in that the reacting gas of the step S6 is lazy Property gas.
  16. 16. atomic layer lithographic method according to claim 15, it is characterised in that the inert gas of the step S6 is At least one of He, Ne, Ar, Kr, Xe.
  17. 17. atomic layer lithographic method according to claim 16, it is characterised in that the reacting gas of the step S6 is He, and flow is 10~200sccm.
  18. 18. atomic layer lithographic method according to claim 10, it is characterised in that the baffle assembly include three every Plate, and three dividing plates are intervally installed in the vertical direction, are provided with being grounded in the dividing plate of the top and bottom, Middle dividing plate is connected with DC bias power.
  19. 19. atomic layer lithographic method according to claim 18, it is characterised in that the output electricity of the DC bias power Press as 5~100V.
  20. 20. atomic layer lithographic method according to claim 19, it is characterised in that the output electricity of the DC bias power Press as 10~50V.
CN201410433208.2A 2014-08-28 2014-08-28 Atomic layer etching device and use its atomic layer lithographic method Active CN105448635B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201410433208.2A CN105448635B (en) 2014-08-28 2014-08-28 Atomic layer etching device and use its atomic layer lithographic method
TW104126985A TWI620260B (en) 2014-08-28 2015-08-19 Atomic layer etching device and atomic layer etching method using same
KR1020177008420A KR101917304B1 (en) 2014-08-28 2015-08-19 Atomic layer etching device and atomic layer etching method using same
PCT/CN2015/087512 WO2016029817A1 (en) 2014-08-28 2015-08-19 Atomic layer etching device and atomic layer etching method using same
SG11201701159QA SG11201701159QA (en) 2014-08-28 2015-08-19 Atomic layer etching device and atomic layer etching method using same
JP2017511633A JP6454409B2 (en) 2014-08-28 2015-08-19 Atomic layer etching apparatus and atomic layer etching method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410433208.2A CN105448635B (en) 2014-08-28 2014-08-28 Atomic layer etching device and use its atomic layer lithographic method

Publications (2)

Publication Number Publication Date
CN105448635A CN105448635A (en) 2016-03-30
CN105448635B true CN105448635B (en) 2018-01-09

Family

ID=55398749

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410433208.2A Active CN105448635B (en) 2014-08-28 2014-08-28 Atomic layer etching device and use its atomic layer lithographic method

Country Status (6)

Country Link
JP (1) JP6454409B2 (en)
KR (1) KR101917304B1 (en)
CN (1) CN105448635B (en)
SG (1) SG11201701159QA (en)
TW (1) TWI620260B (en)
WO (1) WO2016029817A1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10269566B2 (en) * 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
JP6715129B2 (en) * 2016-08-31 2020-07-01 東京エレクトロン株式会社 Plasma processing device
KR101848908B1 (en) * 2016-09-19 2018-05-15 인베니아 주식회사 Inductively coupled plasma processing apparatus
KR102410571B1 (en) * 2016-12-09 2022-06-22 에이에스엠 아이피 홀딩 비.브이. Thermal Atomic Layer Etching Processes
JP6948788B2 (en) 2016-12-15 2021-10-13 東京エレクトロン株式会社 Plasma processing equipment
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US20190131130A1 (en) * 2017-10-31 2019-05-02 Lam Research Corporation Etching metal oxide substrates using ale and selective deposition
US10529543B2 (en) * 2017-11-15 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Etch process with rotatable shower head
JP6811202B2 (en) * 2018-04-17 2021-01-13 東京エレクトロン株式会社 Etching method and plasma processing equipment
CN110391120B (en) * 2018-04-17 2022-02-22 北京北方华创微电子装备有限公司 Shower nozzle and plasma processing cavity
JP7133975B2 (en) 2018-05-11 2022-09-09 東京エレクトロン株式会社 Etching method and etching apparatus
JP2021019201A (en) 2019-07-18 2021-02-15 エーエスエム アイピー ホールディング ビー．ブイ． Showerhead device for semiconductor processing system
KR20220066097A (en) 2019-09-17 2022-05-23 램 리써치 코포레이션 Atomic Layer Etching and Ion Beam Etching Patterning
CN110718440B (en) * 2019-10-16 2022-06-14 北京北方华创微电子装备有限公司 Atomic layer etching equipment and etching method
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
CN111883467B (en) * 2020-08-06 2024-03-12 京东方科技集团股份有限公司 Etching groove
CN112103168B (en) * 2020-10-14 2024-06-07 浙江赛威科光电科技有限公司 Weak plasma etching equipment for in-situ evaporation
CN112522683B (en) * 2020-12-01 2023-03-24 江苏集萃有机光电技术研究所有限公司 Atomic layer deposition device and OLED packaging method
CN114400174B (en) * 2022-01-18 2023-10-20 长鑫存储技术有限公司 Plasma processing device and method for processing wafer
WO2023183129A1 (en) * 2022-03-22 2023-09-28 Lam Research Corporation Fast atomic layer etch
CN115172134B (en) * 2022-09-06 2022-12-16 江苏鹏举半导体设备技术有限公司 Atomic layer etching device and etching method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7335602B2 (en) * 2006-01-18 2008-02-26 Freescale Semiconductor, Inc. Charge-free layer by layer etching of dielectrics
CN102934208A (en) * 2009-12-15 2013-02-13 休斯敦大学体系 Atomic layer etching with pulsed plasmas
CN103620729A (en) * 2011-04-11 2014-03-05 朗姆研究公司 E-beam enhanced decoupled source for semiconductor processing
CN103748658A (en) * 2011-07-20 2014-04-23 朗姆研究公司 Atomic layer etching using metastables formed from an inert gas

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101080604B1 (en) * 2010-02-09 2011-11-04 성균관대학교산학협력단 atomic layer etching apparatus and etching method using the same
KR20110098693A (en) * 2010-02-26 2011-09-01 성균관대학교산학협력단 Next generation nano-device etching apparature for lower-damage process
US9184028B2 (en) * 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US9373517B2 (en) * 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7335602B2 (en) * 2006-01-18 2008-02-26 Freescale Semiconductor, Inc. Charge-free layer by layer etching of dielectrics
CN102934208A (en) * 2009-12-15 2013-02-13 休斯敦大学体系 Atomic layer etching with pulsed plasmas
CN103620729A (en) * 2011-04-11 2014-03-05 朗姆研究公司 E-beam enhanced decoupled source for semiconductor processing
CN103748658A (en) * 2011-07-20 2014-04-23 朗姆研究公司 Atomic layer etching using metastables formed from an inert gas

Also Published As

Publication number Publication date
TWI620260B (en) 2018-04-01
WO2016029817A1 (en) 2016-03-03
KR101917304B1 (en) 2018-11-12
TW201608662A (en) 2016-03-01
KR20170048468A (en) 2017-05-08
JP2017535057A (en) 2017-11-24
JP6454409B2 (en) 2019-01-16
CN105448635A (en) 2016-03-30
SG11201701159QA (en) 2017-03-30

Similar Documents

Publication Publication Date Title
CN105448635B (en) Atomic layer etching device and use its atomic layer lithographic method
CN104867827B (en) Engraving method
CN104641455B (en) The oxide etching of free based component
JP4515712B2 (en) Gas plasma generation method and apparatus, and semiconductor device manufacturing method
TWI775819B (en) Etching method
EP1973140A2 (en) Plasma species and uniformity control through pulsed VHF operation
EP2615889A1 (en) Plasma processing apparatus
KR20120116888A (en) Cleaning method of plasma processing apparatus and plasma processing method
CN104347521A (en) Semiconductor device manufacturing method
CN1432190A (en) Enhanced resist strip in dielectric ethcher using downstream plasma
CN105390387A (en) Etching method
CN106548918A (en) A kind of magnetization capacitively coupled plasma source of radio frequency and direct current combination drive
WO2010084909A1 (en) Method for cleaning magnetic film processing chamber, method for manufacturing magnetic element, and substrate processing apparatus
TW200402104A (en) Inductor-coupled plasma processing device
CN112714944A (en) Spacer opening process using dual plasma
TW201532134A (en) Plasma processing method
CN108668422A (en) A kind of plasma generates chamber and plasma processing apparatus
KR100798355B1 (en) Plasma processing apparatus having external winding coil for large area processing
CN112771649B (en) Method for treating a workpiece with fluorine radicals
JP2014072269A5 (en)
CN202406373U (en) Plasma processing device
WO2015144487A1 (en) Method for cleaning a process chamber
JP2014216331A (en) Plasma etching method
JP4318581B2 (en) Semiconductor device manufacturing method and manufacturing apparatus
JP2015088696A (en) Plasma processing method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: 100176 No. 8, Wenchang Avenue, Daxing District economic and Technological Development Zone, Beijing

Applicant after: Beijing North China microelectronics equipment Co Ltd

Address before: 100176 No. 8, Wenchang Avenue, Daxing District economic and Technological Development Zone, Beijing

Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing

GR01 Patent grant
GR01 Patent grant