WO2016029817A1 - Atomic layer etching device and atomic layer etching method using same - Google Patents

Atomic layer etching device and atomic layer etching method using same Download PDF

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Publication number
WO2016029817A1
WO2016029817A1 PCT/CN2015/087512 CN2015087512W WO2016029817A1 WO 2016029817 A1 WO2016029817 A1 WO 2016029817A1 CN 2015087512 W CN2015087512 W CN 2015087512W WO 2016029817 A1 WO2016029817 A1 WO 2016029817A1
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Prior art keywords
atomic layer
chamber
layer etching
reaction
plasma
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PCT/CN2015/087512
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French (fr)
Chinese (zh)
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罗巍
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北京北方微电子基地设备工艺研究中心有限责任公司
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Priority to KR1020177008420A priority Critical patent/KR101917304B1/en
Priority to JP2017511633A priority patent/JP6454409B2/en
Priority to SG11201701159QA priority patent/SG11201701159QA/en
Publication of WO2016029817A1 publication Critical patent/WO2016029817A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to the field of etching, and in particular to an atomic layer etching apparatus and an atomic layer etching method using the same.
  • Atomic Layer Deposition is a mainstream process for preparing high-k gate dielectric layers of field effect transistors, and has been widely used in the semiconductor industry.
  • the corresponding subtractive process, Atomic Layer Etching (ALE) was also developed with the application requirements.
  • the GaAs atomic layer engraving was first implemented by alternating the two processes of Cl2 adsorption and electron beam etching. eclipse.
  • the atomic layer etching technique in the related art has disadvantages such as long etching period, low etching efficiency, and complicated equipment.
  • the present invention aims to solve at least one of the technical problems in the related art to some extent. Accordingly, it is an object of the present invention to provide an atomic layer etching apparatus which can significantly increase the etching rate and shorten the etching cycle time, and the atomic layer etching apparatus has a simple structure.
  • Another object of the present invention is to provide an atomic layer etching method using the atomic layer etching apparatus provided by the present invention, which can also significantly improve the etching rate, shorten the etching cycle time, and reduce the complexity of the device used.
  • An atomic layer etching apparatus comprising: a reaction chamber having a reaction chamber therein; a separator assembly, the separator assembly being disposed in the reaction chamber and reacting the reaction
  • the chamber is partitioned into an upper chamber and a lower chamber, the partition assembly comprising at least one partition, the partition being provided with a through hole extending through the partition in a thickness direction thereof, the partition being grounded or DC a bias power supply connection to prevent charged particles in the upper chamber from entering the lower chamber And allowing active neutral particles to enter the lower chamber;
  • the upper chamber having an inlet for supplying gas into the reaction chamber;
  • the lower chamber having support means for placing a slide, And an exhaust port for exhausting from the reaction chamber; a first plasma generating device for exciting a gas entering the upper chamber into a plasma; and a second plasma generating device for The gas entering the lower chamber is excited into a plasma.
  • the plurality of partition plates are disposed, and the plurality of partition plates are disposed at a distance from each other in the up and down direction, and the partition plate located at the uppermost portion is grounded.
  • the spacing between adjacent partitions is 0.1 mm to 10 mm.
  • the separator has a thickness of 0.5 mm to 20 mm.
  • the through hole has a radial dimension of 10 um to 10 mm.
  • the partition is a metal piece, a graphite piece or a coated metal piece.
  • the first plasma generating device comprises a coil and a first RF power source, the coil is disposed on a dielectric window located at a top of the reaction chamber; and the second plasma generating device comprises a second RF power source The second RF power source is coupled to the support device.
  • top of the upper chamber is provided with a first air inlet for introducing a reaction gas into the reaction chamber; the side of the upper chamber is provided with a second air inlet for the reaction A purge gas is introduced into the chamber.
  • the atomic layer etching device provided by the invention can realize the separation of active neutral particles and charged particles in the plasma by providing a separator assembly in the reaction chamber and grounding or connecting a DC bias power source, so that the active neutrality is achieved.
  • the particles pass through the separator assembly and are adsorbed on the surface of the slide located in the lower chamber, thereby realizing the use of active particle chemisorption instead of the conventional reaction gas adsorption. Since the adsorbed particles in the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and the amount of etching reaction gas can be greatly saved in the chemisorption stage due to the strong adsorption capacity of the active particles. , reduce process costs.
  • the purge gas plasma ion desorption is used in the present invention, the ion is used.
  • the complexity of the device can be reduced, and an atomic layer etching device with a simple and reliable structure can be obtained, thereby facilitating mass production applications.
  • the present invention further provides a method for performing atomic layer etching using the atomic layer etching apparatus provided by the present invention, which comprises the following steps: S1: placing a slide to be reacted on a supporting device; S2 Passing a reaction gas into the reaction chamber, initiating the first plasma generating device to excite the reaction gas entering the upper chamber into a plasma, wherein the active neutral particles in the plasma pass through the separator assembly from the upper chamber The chamber enters the lower chamber and is adsorbed on the surface of the slide, and the charged particles in the plasma are prevented from entering the lower chamber from the upper chamber by the partition assembly; S3: stopping the introduction of the reaction gas, and closing the first a plasma generating device; S4: introducing a purge gas into the reaction chamber, and discharging the reaction residue through the exhaust port to the reaction chamber; S5: stopping the flow of the purge gas; S6: passing the reaction gas Into the reaction chamber, the second plasma generating device is activated to excite the reaction gas entering the lower chamber into a plasma,
  • the first plasma generating device comprises a coil and a first RF power source, the coil is disposed on a dielectric window located at a top of the reaction chamber, and the coil is connected to the first RF power source, the step The first plasma generating device is activated in S2 to set the output power of the first RF power source to 100 W to 1000 W, and the step S3 turns off the first plasma generating device to set the output power of the first RF power source to 0.
  • the second plasma generating device includes a second RF power source, the second RF power source is connected to the supporting device, and the step S5 starts the second plasma generating device to output the second RF power source.
  • the power is set to 30W to 100W, and the step S7 turns off the second plasma generating device to set the output power of the second RF power source to zero.
  • reaction gases of the step S2 are CF4, CHF3, CH2F2, CH3F, At least one of Cl2, HF, HCl, HBr, SF6, NF3, Br2, BCl3, SiCl4, O2, SiO2.
  • the reaction gas in the step S2 is Cl2, and the flow rate is 5 to 200 sccm.
  • reaction gas of the step S6 is an inert gas.
  • the inert gas in the step S6 is at least one of He, Ni, Ar, Kr, and Xe.
  • the reaction gas in the step S6 is He, and the flow rate is 10 to 200 sccm.
  • the top of the upper chamber is provided with a first air inlet through which the reaction gas enters the reaction chamber; the side of the upper chamber is provided with a second air inlet, the purge gas Via it into the reaction chamber.
  • the baffle assembly includes three baffles, and the three baffles are disposed at a distance from each other in the up and down direction, and the partitions disposed at the uppermost and lowermost portions are grounded, and the intermediate partition and the DC bias are Press the power supply connection.
  • the output voltage of the DC bias power supply is 5 to 100V. Preferably, the output voltage of the DC bias power supply is 10 to 50V.
  • the atomic layer etching method provided by the invention can realize the separation of the active neutral particles from the charged particles in the plasma, so that the active neutral particles can be adsorbed to the surface of the carrier sheet, thereby realizing the replacement of the traditional particles by active particle chemisorption.
  • the reaction gas is adsorbed. Since the adsorbed particles in the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and the amount of etching reaction gas can be greatly saved in the chemisorption stage due to the strong adsorption capacity of the active particles. , reduce process costs.
  • the purge gas plasma ion desorption is used in the present invention, the complexity of the atomic layer etching apparatus used can be reduced, and it is advantageous for the method of desorbing the ion beam/neutral particle beam. Scale production.
  • FIG. 1 is a schematic view of an atomic layer etching apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic view of a spacer assembly in accordance with an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a process of etching by using an atomic layer etching apparatus provided by an embodiment of the present invention
  • FIG. 4 is a flow chart of an etching method in accordance with an embodiment of the present invention.
  • Atomic layer etching apparatus 100
  • Reaction chamber 1 reaction chamber 10, upper chamber 213, lower chamber 214, intake nozzle 204, first intake port 216, second intake port 215, exhaust port 217,
  • Purge assembly 207 extraction device 212, support device 202, second RF power source 211, second matcher 210, slide 201, plasma 402, active neutral particles 403, plasma 404, ions 405, etch byproducts 406.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • the meaning of "a plurality” is two or more unless specifically and specifically defined otherwise.
  • the essence of the present invention is to provide an atomic layer etching apparatus and a method of etching using the atomic layer etching apparatus.
  • a separator assembly is disposed in the reaction chamber of the atomic layer etching apparatus to partition the reaction chamber into an upper chamber and a lower chamber, the separator assembly including at least one partition, each of which is provided along the partition The thickness direction penetrates through the through hole of the spacer, and each of the spacers is electrically grounded (hereinafter referred to as "grounding") or connected to a DC bias power source, which can prevent charged particles in the upper chamber from entering the lower chamber and allowing active neutrality.
  • grounding electrically grounded
  • active particle chemical adsorption is used instead of the conventional reaction gas adsorption.
  • the adsorbed particles in the present invention are active particles, which not only can significantly increase the etching rate and shorten the etching cycle time; but also can greatly reduce the use amount of the etching reaction gas and reduce the process cost in the chemisorption stage.
  • the purge gas plasma ion desorption is used, which can not only reduce the complexity of the atomic layer etching apparatus used but also facilitate the large scale relative to the ion beam/neutrophil beam desorption method. produce.
  • the structure of the atomic layer etching apparatus 100 according to an embodiment of the present invention will be described in detail below with reference to FIGS. 1 and 2.
  • the atomic layer etching apparatus 100 provided in this embodiment is used for etching the carrier 201.
  • the carrier 201 may be a unit material of Si, Ge, C, or the like, or may be a compound such as GaAs or GaN. Carrier material piece.
  • the atomic layer etching apparatus 100 includes a reaction chamber 1, a separator assembly 203, a first plasma generating device, a purging assembly 207, an extracting device 212, a supporting device 202, and a second plasma generating device.
  • reaction chamber 1 defines a reaction chamber 10
  • a separator assembly 203 is disposed in the reaction chamber 10 to partition the reaction chamber 10 into an upper chamber 213 and a lower chamber 214.
  • An exhaust port 217 is provided on the bottom wall of the lower chamber 214, and the extracting device 212 is directly connected to the exhaust port 217, and the extracting device 212 may be a vacuum pump set.
  • first air inlet 216 having an inlet nozzle 204 for introducing a reaction gas into the reaction chamber 10
  • the side of the upper chamber 213 i.e., the side wall of the upper chamber 213) is provided with a second air inlet 215 connected to the purge assembly 207 for supplying a purge gas into the reaction chamber 10.
  • the second air inlet 215 can also be disposed on the side wall of the lower chamber 214.
  • the spacer assembly 203 includes three spacers 303 which are disposed at a distance from each other in the up and down direction, that is, the first spacer 303a, the second spacer 303b, and the third spacer 303c.
  • the spacing between adjacent partitions 303 is 0.1 mm to 10 mm, and among the three partitions 303, the partition 303 is in direct contact with the plasma 402 in the upper chamber 213 (ie, at the top in FIG. 2)
  • the first partition 303a) is grounded, the second partition 303b located in the middle is connected to the DC bias power source, and the third partition 303c located at the bottom is grounded.
  • Each of the partition plates 303 has a thickness of 0.5 mm to 20 mm, and is provided with a through hole 302 penetrating the partition plate 303 in the thickness direction of the partition plate 303.
  • the through holes 302 of each of the partitions 303 are evenly distributed and of the same size.
  • the through holes 302 may have a circular shape, a rectangular parallelepiped shape or the like, and each of the through holes 302 has a radial dimension of 10 um to 10 mm.
  • Each of the partitions 303 is a metal member (such as aluminum, stainless steel, etc.), a graphite member or a coated metal member.
  • the separator 303 may be anodized aluminum, an aluminum member containing a Y2O3, TIN, Si coating, or the like.
  • the material of the separator 303 is graphite.
  • the separator assembly 203 functions primarily to repel and trap charged particles to prevent charged particles in the upper chamber 213 from entering the lower chamber 214 and to allow the active neutral particles 403 to pass through the through holes 302 to reach the lower chamber.
  • the baffle assembly 203 is configured to prevent charged particles within the upper chamber 213 from entering the lower chamber 214 but allowing active neutral particles to enter the lower chamber 214. It can be understood that, in practical applications, the number of the partitions 303 is not limited to three in the embodiment, but may be one, two or more.
  • each of the spacers 303 can be placed grounded or connected to a DC bias power source for grounding to capture charged particles, and the DC bias power source is for repelling charged particles.
  • the plurality of partition plates 303 are disposed at a distance from each other in the up and down direction, and the distance between the lowermost partition plate 303 and the supporting device 202 is preferably It is 5cm to 50cm.
  • the number of the separators 303 and the shape of the separator 303 may not be specifically limited as long as the separator assembly 203 can function to prevent passage of charged particles but allow passage of active neutral particles.
  • the first plasma generating device includes a coil 205, a first matching unit 208, and a first RF power source 209 for exciting a reaction gas entering the upper chamber 213 into a plasma 402, the plasma 402. It is a high density plasma, and thus the upper chamber 213 can also be referred to as a high density plasma generating chamber.
  • coil 205 is disposed over dielectric window 206 at the top of reaction chamber 10 and is coupled to first RF power source 209 via first matcher 208.
  • the dielectric window 206 functions as an energy coupling, and the material thereof may be a medium such as ceramic or quartz.
  • the first RF power source 209 supplies RF power to the coil 205, and the RF energy on the coil 205 is coupled into the reaction chamber 10 in an inductively coupled manner by the cooperation of the coil 205 and the dielectric window 206.
  • the reaction gas is caused to generate a plasma 402 comprising charged particles and active neutral particles 403; that is, when the coil 205 is an inductive coil, the plasma generated in the reaction chamber 10 is an inductively coupled plasma.
  • the structure of the first plasma generating device is not limited to Therefore, as long as the action of the first plasma generating device is ensured, the reaction gas entering the upper chamber 213 can be excited into the plasma 402; and the plasma generated by the first plasma generating device is also It is not necessarily limited to inductively coupled plasma, but may be other types of plasma, such as capacitively coupled plasma, microwave plasma, continuous plasma, pulsed plasma, and the like.
  • the second plasma generating apparatus includes a second RF power source 211, a second matching unit 210, and a supporting device 202 for exciting the reaction gas entering the lower chamber 214 into a plasma.
  • the second RF power source 211 is connected to the supporting device 202 via the second matching device 210 to provide the RF power to the supporting device 202.
  • the second matching device 210 ensures that the RF power provided by the second RF power source 211 can meet different requirements. Demand for use.
  • the second plasma generating device can be controlled to ensure that the energy of the ions 405 in the plasma is controlled to react only with the surface atoms to which the active neutral particles 403 are adsorbed, that is, the energy can only be interrupted by the carrier 201.
  • the surface atoms are bonded, but not enough to cause significant physical sputtering with atoms below the surface atomic layer. That is, the plasma in which the reaction gas in the lower chamber 214 is excited is a low-energy plasma. Similar to the first plasma generating device, the second plasma generating device can also be of any configuration.
  • step S11 the surface-removed slide 201 to be reacted is placed on the support device 202.
  • Step S12 the chemical adsorption phase: the reaction gas is introduced into the reaction chamber 10 through the inlet nozzle 204.
  • the etching reaction gas selected in the embodiment is Cl2, the flow rate is 5 sccm to 200 sccm, and the gas pressure in the reaction chamber 10 is controlled. From 0.5mT to 100mT. Since the first RF power is 100-1000 W and the second RF power loaded on the support device 202 is 0 W, the reactive gas can generate a high-density plasma in the upper chamber (ie, the high-density plasma generating chamber) 213.
  • the body 402 that is, Cl2 will be ionized and decomposed under the excitation of radio frequency energy, and the particles generated mainly include Cl ions, Cl atoms, and Cl2 molecules. And electrons, etc., at this time, the first separator 303a and the third separator 303c are grounded to capture most of the charged particles, and the second separator 303b is connected to the DC bias power source and the voltage is set at 5 to 100 V (preferably 10 to 50 V), which repels the charged particles such as Cl ions having higher energy, thereby confining them to the upper chamber 213, so that the generated low-energy active neutral particles 403 (excited Cl 2 molecules, excited Cl atoms) Under the action of the airflow, the separator assembly 203 enters the lower chamber 214 and is rapidly adsorbed on the surface of the carrier 201. Since it is an active particle, its adsorption rate is much larger than that of the conventional etching process. rate.
  • Step S13 purging the residual reaction gas phase: stopping the introduction of the reaction gas, and closing the first plasma generating device; allowing the purge gas to enter the reaction chamber 10 via the purge assembly 207 to be in the reaction chamber 10
  • the residual reaction gas is purged; and finally, the residual reaction gas and the purge gas in the reaction chamber 10 are discharged through the exhaust port 217 by means of the extraction device 212.
  • the purge gas may be an inert gas.
  • Step S14 desorption etching step: the reaction gas is introduced into the reaction chamber 10 via the inlet nozzle 204, and the second plasma generating device is activated to excite the reaction gas entering the lower chamber 214 into a plasma.
  • the surface of the slide 201 on which the active neutral particles are adsorbed is irradiated.
  • the reaction gas selected in the present embodiment is an inert gas He
  • the flow rate is 10 to 200 sccm
  • the gas pressure of the reaction chamber 10 is controlled at 200 mT to 4 Torr.
  • the reactive gas can generate low energy ( ⁇ 100 eV) in the lower chamber (ie, the low energy plasma generating chamber) 214.
  • the plasma 404 is irradiated to the surface of the slide 201.
  • the energy of the ions 405 in the plasma 404 can be controlled to react only with the surface atoms adsorbing the active neutral particles, and the atoms of the surface of the carrier 201 are broken, but insufficient. Significant physical sputtering occurs with atoms below the surface atomic layer.
  • Step S15 the purge gas is introduced into the reaction chamber 10 via the purge assembly 207, and finally the residual reaction gas and purge gas in the reaction chamber 10 are passed through the extraction device 212.
  • the exhaust port 217 is exhausted to evacuate the etch byproduct 406 in the reaction chamber 10.
  • step S11 to step S15 the carrier 201 is etched with a layer of surface atoms.
  • steps S12 to S15 are repeated to realize that the surface of the carrier 201 is etched by one layer of atoms and one layer of atoms until the etching depth reaches a preset value. That is to say, the etching method provided by the embodiment of the present invention can achieve the etching precision of the atomic level.
  • the so-called atomic level refers to the layer of atoms and one layer of atoms when etching the surface of the carrier 201. Layer etching.
  • the spacer assembly 203 by disposing the spacer assembly 203 and grounding or connecting a DC bias power source, separation of active neutral particles from charged particles in the plasma can be achieved, and the active neutrality is achieved.
  • the particles pass through the separator assembly 203 and are adsorbed on the surface of the slide 201 located in the lower chamber 214, thereby realizing the use of active particle chemisorption instead of the conventional reaction gas adsorption. Since the adsorbed particles in the embodiment of the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and because the active particles have strong adsorption capacity, the etching reaction gas can be greatly saved in the chemisorption stage.
  • the amount of use reduces the cost of the process.
  • the purge gas plasma ion desorption is used in the embodiment of the invention, the complexity of the device can be reduced compared to the device using the ion beam/neutrophil beam desorption, and the atomic layer with simple and reliable structure can be obtained.
  • the device 100 is etched to facilitate large scale production applications.
  • the present invention also provides an atomic layer etching method.
  • An atomic layer etching method according to an embodiment of the present invention is described in detail with reference to FIG. 4, which is implemented by the atomic layer etching apparatus provided by the foregoing embodiment of the present invention, and specifically includes the following steps:
  • reaction chamber setting the output power of the first RF power source to 100 W to 1000 W, that is, starting the first plasma generating device to excite the reaction gas entering the upper chamber into a high-density plasma And pass active neutral particles in the plasma
  • the baffle assembly enters the lower chamber from the upper chamber and is adsorbed on the surface of the slide, and the charged particles in the plasma are blocked by the baffle assembly and prevented from entering the lower chamber from the upper chamber. That is, the reaction chamber in this embodiment is partitioned into an upper chamber and a lower chamber by a separator assembly having a function of preventing charged particles in the upper chamber from entering the lower chamber but allowing the upper chamber to be activated. The role of neutral particles entering the lower chamber.
  • the spacer assembly may include three spacers, and the three spacers are spaced apart from each other in the up and down direction, the spacers disposed at the uppermost and lowermost portions are grounded, and the intermediate spacers and the DC bias are Press the power supply connection.
  • the output voltage of the DC bias power supply is 5 to 100 V, preferably 10 to 50 V.
  • the reaction gas enters the upper chamber through an intake nozzle disposed in the first intake port at the top of the upper chamber, and the reaction gas may be CF4, CHF3, CH2F2, CH3F, Cl2, HF, HCl. At least one of HBr, SF6, NF3, Br2, BCl3, SiCl4, O2, SiO2.
  • the reaction gas in the step S2 is Cl2, and the flow rate is 5 to 200 sccm.
  • the purge gas is introduced into the reaction chamber, and the reaction gas remaining in the reaction chamber is discharged through the exhaust port.
  • the purge gas can be introduced into the reaction chamber through the purging assembly, for example, the reaction gas is introduced into the reaction chamber through the second air inlet disposed at the side of the upper chamber, and finally the extraction device is utilized. The reaction residue was withdrawn.
  • reaction gas is introduced into the reaction chamber, and the output power of the second RF power source is set to 30 W to 100 W, that is, the second plasma generating device is activated, and the reaction gas entering the lower chamber is excited into a low-energy plasma.
  • the surface of the slide to which the active neutral particles are adsorbed is irradiated.
  • the reaction gas in this step S6 is an inert gas, and may be, for example, He, Ni, Ar, At least one of Kr, Xe.
  • the reaction gas may be He having a flow rate of 10 to 200 sccm.
  • the atomic layer etching method provided by the embodiment of the invention can realize the separation of the active neutral particles in the plasma and the charged particles, so that the active neutral particles can be adsorbed to the surface of the carrier sheet, thereby realizing the chemical adsorption of the active particles.
  • the adsorbed particles in the embodiment of the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and because the active particles have strong adsorption capacity, the etching reaction gas can be greatly saved in the chemisorption stage. The amount of use reduces the cost of the process.
  • the complexity of the atomic layer etching apparatus used can be reduced not only in the manner of desorption of the ion beam/neutrophil beam, but also Conducive to mass production.

Abstract

An atomic layer etching device and an atomic layer etching method using same. The atomic layer etching device comprises a reaction cavity (1), a baffle assembly (203), a first plasma generation device (205) and a second plasma generation device (211), wherein the baffle assembly (203) divides a reaction chamber into an upper chamber (213) and a lower chamber (214), and the baffle assembly (203) comprises a baffle capable of being grounded or connected to a direct-current bias power supply, so as to prevent charged particles in the upper chamber from entering the lower chamber (214) and permit active neutral particles to enter the lower chamber (214). The first plasma generation device (205) is used for exciting gas entering the upper chamber (213) into plasma. The second plasma generation device (211) is used for exciting gas entering the lower chamber (214) into plasma. By replacing the traditional reaction gas adsorption with the chemical adsorption of active adsorption particles, the etching rate can be significantly increased, the etching cycle time can be shortened, the amount of etching reaction gas used can be reduced, and process costs can be reduced.

Description

原子层刻蚀装置及采用其的原子层刻蚀方法Atomic layer etching device and atomic layer etching method using same 技术领域Technical field
本发明涉及刻蚀领域，尤其是涉及一种原子层刻蚀装置及采用其的原子层刻蚀方法。The present invention relates to the field of etching, and in particular to an atomic layer etching apparatus and an atomic layer etching method using the same.
背景技术Background technique
目前，原子层沉积技术(Atomic Layer Deposition,ALD)是一种主流的制备场效应晶体管高K栅介电层的工艺，已经广泛应用在半导体工业中。与之相对应的减法工艺，原子层刻蚀技术(Atomic Layer Etching,ALE)也随着应用的需求被开发出来，最早采用Cl2吸附和电子束刻蚀两过程交替进行的方案实现GaAs原子层刻蚀。相关技术中的原子层刻蚀技术存在刻蚀周期长、刻蚀效率低、设备复杂等缺点。At present, Atomic Layer Deposition (ALD) is a mainstream process for preparing high-k gate dielectric layers of field effect transistors, and has been widely used in the semiconductor industry. The corresponding subtractive process, Atomic Layer Etching (ALE), was also developed with the application requirements. The GaAs atomic layer engraving was first implemented by alternating the two processes of Cl2 adsorption and electron beam etching. eclipse. The atomic layer etching technique in the related art has disadvantages such as long etching period, low etching efficiency, and complicated equipment.
发明内容Summary of the invention
本发明旨在至少在一定程度上解决相关技术中的技术问题之一。为此，本发明的一个目的在于提出一种原子层刻蚀装置，其能显著提高刻蚀速率，缩短刻蚀周期时间，并且该原子层刻蚀装置结构简单。The present invention aims to solve at least one of the technical problems in the related art to some extent. Accordingly, it is an object of the present invention to provide an atomic layer etching apparatus which can significantly increase the etching rate and shorten the etching cycle time, and the atomic layer etching apparatus has a simple structure.
本发明的另一个目的在于提出一种采用本发明提供的原子层刻蚀装置的原子层刻蚀方法，其同样能显著提高刻蚀速率，缩短刻蚀周期时间，降低所用装置的复杂度。Another object of the present invention is to provide an atomic layer etching method using the atomic layer etching apparatus provided by the present invention, which can also significantly improve the etching rate, shorten the etching cycle time, and reduce the complexity of the device used.
根据本发明实施例的原子层刻蚀装置，其包括：反应腔体，所述反应腔体内具有反应腔室；隔板组件，所述隔板组件设在所述反应腔室内且将所述反应腔室分隔成上腔室和下腔室，所述隔板组件包括至少一个隔板，所述隔板上设有沿其厚度方向贯穿该隔板的通孔，所述隔板接地或与直流偏压电源连接，以阻止所述上腔室内的带电粒子进入所述下腔 室和允许活性中性粒子进入所述下腔室；所述上腔室具有用于向所述反应腔室内供给气体的进气口；所述下腔室具有用于放置载片的支撑装置，和用于从所述反应腔室内排气的排气口；第一等离子体产生装置，用于将进入到所述上腔室内的气体激发为等离子体；第二等离子体产生装置，用于将进入到所述下腔室内的气体激发为等离子体。An atomic layer etching apparatus according to an embodiment of the present invention, comprising: a reaction chamber having a reaction chamber therein; a separator assembly, the separator assembly being disposed in the reaction chamber and reacting the reaction The chamber is partitioned into an upper chamber and a lower chamber, the partition assembly comprising at least one partition, the partition being provided with a through hole extending through the partition in a thickness direction thereof, the partition being grounded or DC a bias power supply connection to prevent charged particles in the upper chamber from entering the lower chamber And allowing active neutral particles to enter the lower chamber; the upper chamber having an inlet for supplying gas into the reaction chamber; the lower chamber having support means for placing a slide, And an exhaust port for exhausting from the reaction chamber; a first plasma generating device for exciting a gas entering the upper chamber into a plasma; and a second plasma generating device for The gas entering the lower chamber is excited into a plasma.
其中，所述隔板为多个，且所述多个隔板在上下方向上彼此间隔一定距离而设置，并且位于在最上方的隔板接地。Wherein, the plurality of partition plates are disposed, and the plurality of partition plates are disposed at a distance from each other in the up and down direction, and the partition plate located at the uppermost portion is grounded.
其中，最下方的隔板与所述支撑装置之间的距离为5cm～50cmWherein the distance between the lowermost partition and the supporting device is 5cm to 50cm
其中，相邻隔板之间的间距为0.1mm～10mm。Wherein, the spacing between adjacent partitions is 0.1 mm to 10 mm.
其中，所述隔板的厚度为0.5mm～20mm。Wherein, the separator has a thickness of 0.5 mm to 20 mm.
其中，所述通孔的径向尺寸为10um～10mm。Wherein, the through hole has a radial dimension of 10 um to 10 mm.
其中，所述隔板为金属件、石墨件或带有涂层的金属件。Wherein, the partition is a metal piece, a graphite piece or a coated metal piece.
其中，所述第一等离子体产生装置包括线圈和第一射频电源，所述线圈设在位于所述反应腔室顶部的介质窗上；所述第二等离子体产生装置包括第二射频电源，所述第二射频电源与所述支撑装置相连。Wherein the first plasma generating device comprises a coil and a first RF power source, the coil is disposed on a dielectric window located at a top of the reaction chamber; and the second plasma generating device comprises a second RF power source The second RF power source is coupled to the support device.
其中，所述上腔室顶部设有第一进气口，用于向所述反应腔室内通入反应气体；所述上腔室侧部设有第二进气口，用于向所述反应腔室内通入吹扫气体。Wherein the top of the upper chamber is provided with a first air inlet for introducing a reaction gas into the reaction chamber; the side of the upper chamber is provided with a second air inlet for the reaction A purge gas is introduced into the chamber.
本发明提供的原子层刻蚀装置，通过在反应腔室内设置隔板组件并使其接地或者接直流偏压电源，可以实现等离子体中的活性中性粒子与带电粒子进行分离，使活性中性粒子穿过隔板组件并吸附在位于下腔室内的载片的表面，从而实现了采用活性粒子化学吸附替代传统反应气体吸附。由于本发明中的吸附粒子为活性粒子，因而不仅可以显著提高刻蚀速率，缩短刻蚀周期时间；而且因活性粒子吸附能力强而可以在该化学吸附阶段大幅度节约刻蚀反应气体的使用量，降低工艺成本。另外，由于本发明中采用吹扫气体等离子体离子解吸附，因而相对于采用离子 束/中性粒子束解吸附的装置而言，可以降低装置的复杂性，获得结构简单可靠的原子层刻蚀装置，从而利于大规模生产应用。The atomic layer etching device provided by the invention can realize the separation of active neutral particles and charged particles in the plasma by providing a separator assembly in the reaction chamber and grounding or connecting a DC bias power source, so that the active neutrality is achieved. The particles pass through the separator assembly and are adsorbed on the surface of the slide located in the lower chamber, thereby realizing the use of active particle chemisorption instead of the conventional reaction gas adsorption. Since the adsorbed particles in the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and the amount of etching reaction gas can be greatly saved in the chemisorption stage due to the strong adsorption capacity of the active particles. , reduce process costs. In addition, since the purge gas plasma ion desorption is used in the present invention, the ion is used. In the case of a beam/neutral particle beam desorption device, the complexity of the device can be reduced, and an atomic layer etching device with a simple and reliable structure can be obtained, thereby facilitating mass production applications.
作为另一个方面，本发明还提供一种利用了本发明提供的原子层刻蚀装置进行原子层刻蚀的方法，其包括如下步骤：S1：将待反应的载片放置于支撑装置上；S2：将反应气体通入到反应腔室内，启动第一等离子体产生装置将进入到上腔室内的反应气体激发为等离子体，其中等离子体中的活性中性粒子通过隔板组件从所述上腔室进入到下腔室内且吸附在载片的表面上，等离子体中的带电粒子由隔板组件阻止从所述上腔室进入所述下腔室；S3：停止通入反应气体，并关闭第一等离子体产生装置；S4：将吹扫气体通入到反应腔室内，并使反应残留物经排气口而排出反应腔室；S5：停止通入吹扫气体；S6：将反应气体通入到反应腔室内，启动第二等离子体产生装置将进入到所述下腔室内的反应气体激发为等离子体，以对吸附有活性中性粒子的载片表面进行辐照；S7：停止通入反应气体，并关闭第二等离子体产生装置；S8：将吹扫气体通入到反应腔室内，并使反应残留物经排气口而排出反应腔室；S9：停止通入吹扫气体；重复上述步骤S2～S8，直至刻蚀深度达到预设值。In another aspect, the present invention further provides a method for performing atomic layer etching using the atomic layer etching apparatus provided by the present invention, which comprises the following steps: S1: placing a slide to be reacted on a supporting device; S2 Passing a reaction gas into the reaction chamber, initiating the first plasma generating device to excite the reaction gas entering the upper chamber into a plasma, wherein the active neutral particles in the plasma pass through the separator assembly from the upper chamber The chamber enters the lower chamber and is adsorbed on the surface of the slide, and the charged particles in the plasma are prevented from entering the lower chamber from the upper chamber by the partition assembly; S3: stopping the introduction of the reaction gas, and closing the first a plasma generating device; S4: introducing a purge gas into the reaction chamber, and discharging the reaction residue through the exhaust port to the reaction chamber; S5: stopping the flow of the purge gas; S6: passing the reaction gas Into the reaction chamber, the second plasma generating device is activated to excite the reaction gas entering the lower chamber into a plasma to irradiate the surface of the slide on which the active neutral particles are adsorbed. S7: stopping the introduction of the reaction gas and turning off the second plasma generating device; S8: passing the purge gas into the reaction chamber, and discharging the reaction residue through the exhaust port; S9: stopping the access Purge the gas; repeat the above steps S2 to S8 until the etching depth reaches a preset value.
其中，所述第一等离子体产生装置包括线圈和第一射频电源，所述线圈设在位于所述反应腔室顶部的介质窗上，所述线圈与所述第一射频电源相连，所述步骤S2中启动第一等离子体产生装置为将所述第一射频电源的输出功率设置为100W～1000W，所述步骤S3关闭第一等离子体产生装置为将所述第一射频电源的输出功率设置为0。Wherein the first plasma generating device comprises a coil and a first RF power source, the coil is disposed on a dielectric window located at a top of the reaction chamber, and the coil is connected to the first RF power source, the step The first plasma generating device is activated in S2 to set the output power of the first RF power source to 100 W to 1000 W, and the step S3 turns off the first plasma generating device to set the output power of the first RF power source to 0.
其中，所述第二等离子体产生装置包括第二射频电源，所述第二射频电源与所述支撑装置相连，所述步骤S5启动第二等离子体产生装置为将所述第二射频电源的输出功率设置为30W～100W，所述步骤S7关闭第二等离子体产生装置为将所述第二射频电源的输出功率设置为0。The second plasma generating device includes a second RF power source, the second RF power source is connected to the supporting device, and the step S5 starts the second plasma generating device to output the second RF power source. The power is set to 30W to 100W, and the step S7 turns off the second plasma generating device to set the output power of the second RF power source to zero.
其中，所述步骤S2的反应气体为CF4，CHF3，CH2F2，CH3F， Cl2,HF，HCl，HBr，SF6，NF3，Br2，BCl3，SiCl4，O2、SiO2中的至少一种。Wherein, the reaction gases of the step S2 are CF4, CHF3, CH2F2, CH3F, At least one of Cl2, HF, HCl, HBr, SF6, NF3, Br2, BCl3, SiCl4, O2, SiO2.
其中，所述步骤S2的反应气体为Cl2，且流量为5～200sccm。The reaction gas in the step S2 is Cl2, and the flow rate is 5 to 200 sccm.
其中，所述步骤S6的反应气体为惰性气体。Wherein, the reaction gas of the step S6 is an inert gas.
其中，所述步骤S6的惰性气体为He，Ni，Ar，Kr，Xe中的至少一种。The inert gas in the step S6 is at least one of He, Ni, Ar, Kr, and Xe.
其中，所述步骤S6的反应气体为He，且流量为10～200sccm。The reaction gas in the step S6 is He, and the flow rate is 10 to 200 sccm.
其中，所述上腔室顶部设有第一进气口，所述反应气体经由其进入到所述反应腔室内；所述上腔室侧部设有第二进气口，所述吹扫气体经由其进入到所述反应腔室内。Wherein the top of the upper chamber is provided with a first air inlet through which the reaction gas enters the reaction chamber; the side of the upper chamber is provided with a second air inlet, the purge gas Via it into the reaction chamber.
其中，所述隔板组件包括三个隔板，且所述三个隔板在上下方向上彼此间隔一定距离设置，并且设置在最上方和最下方的隔板接地，中间的隔板与直流偏压电源连接。Wherein, the baffle assembly includes three baffles, and the three baffles are disposed at a distance from each other in the up and down direction, and the partitions disposed at the uppermost and lowermost portions are grounded, and the intermediate partition and the DC bias are Press the power supply connection.
其中，所述直流偏压电源的输出电压为5～100V。优选地，所述直流偏压电源的输出电压为10～50V。The output voltage of the DC bias power supply is 5 to 100V. Preferably, the output voltage of the DC bias power supply is 10 to 50V.
本发明提供的原子层刻蚀方法，由于能够实现等离子体中的活性中性粒子与带电粒子进行分离，使活性中性粒子能够吸附到载片的表面，从而实现了采用活性粒子化学吸附替代传统反应气体吸附。由于本发明中的吸附粒子为活性粒子，因而不仅可以显著提高刻蚀速率，缩短刻蚀周期时间；而且因活性粒子吸附能力强而可以在该化学吸附阶段大幅度节约刻蚀反应气体的使用量，降低工艺成本。另外，由于本发明中采用吹扫气体等离子体离子解吸附，因而相对于采用离子束/中性粒子束解吸附的方式而言，不仅可以降低所用原子层刻蚀装置的复杂性，而且利于大规模生产。 The atomic layer etching method provided by the invention can realize the separation of the active neutral particles from the charged particles in the plasma, so that the active neutral particles can be adsorbed to the surface of the carrier sheet, thereby realizing the replacement of the traditional particles by active particle chemisorption. The reaction gas is adsorbed. Since the adsorbed particles in the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and the amount of etching reaction gas can be greatly saved in the chemisorption stage due to the strong adsorption capacity of the active particles. , reduce process costs. In addition, since the purge gas plasma ion desorption is used in the present invention, the complexity of the atomic layer etching apparatus used can be reduced, and it is advantageous for the method of desorbing the ion beam/neutral particle beam. Scale production.
附图说明DRAWINGS
图1为根据本发明实施例的原子层刻蚀装置的示意图；1 is a schematic view of an atomic layer etching apparatus according to an embodiment of the present invention;
图2为根据本发明实施例的隔板组件的示意图；2 is a schematic view of a spacer assembly in accordance with an embodiment of the present invention;
图3为利用本发明实施例提供的原子层刻蚀装置进行刻蚀的过程示意图；3 is a schematic diagram of a process of etching by using an atomic layer etching apparatus provided by an embodiment of the present invention;
图4为根据本发明实施例的刻蚀方法的流程图。4 is a flow chart of an etching method in accordance with an embodiment of the present invention.
附图标记：Reference mark:
原子层刻蚀装置100、Atomic layer etching apparatus 100,
反应腔体1、反应腔室10、上腔室213、下腔室214、进气喷嘴204、第一进气口216、第二进气口215、排气口217、Reaction chamber 1, reaction chamber 10, upper chamber 213, lower chamber 214, intake nozzle 204, first intake port 216, second intake port 215, exhaust port 217,
隔板组件203、隔板203、通孔302、第一隔板303a、第二隔板303b、第三隔板303c、The partition plate assembly 203, the partition plate 203, the through hole 302, the first partition plate 303a, the second partition plate 303b, the third partition plate 303c,
线圈205、介质窗206、第一射频电源209、第一匹配器208、The coil 205, the dielectric window 206, the first RF power source 209, the first matcher 208,
吹扫组件207、抽取装置212、支撑装置202、第二射频电源211、第二匹配器210、载片201、等离子体402、活性中性粒子403、等离子体404、离子405、刻蚀副产物406。Purge assembly 207, extraction device 212, support device 202, second RF power source 211, second matcher 210, slide 201, plasma 402, active neutral particles 403, plasma 404, ions 405, etch byproducts 406.
具体实施方式detailed description
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。The embodiments of the present invention are described in detail below, and the examples of the embodiments are illustrated in the drawings, wherein the same or similar reference numerals are used to refer to the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the drawings are intended to be illustrative of the invention and are not to be construed as limiting.
在本发明的描述中，需要理解的是，术语“厚度”、“上”、“下”、“顶”、“底”“内”、“外”、“径向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而 不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。In the description of the present invention, it is to be understood that the terms "thickness", "upper", "lower", "top", "bottom", "inner", "outer", "radial", etc. indicate the orientation or position. The relationship is based on the orientation or positional relationship shown in the drawings, and is merely for the convenience of describing the present invention and simplifying the description. It is not intended or implied that the device or component that is referred to has a particular orientation, is constructed and operated in a particular orientation, and thus is not to be construed as limiting the invention.
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。Moreover, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first" and "second" may include one or more of the features either explicitly or implicitly. In the description of the present invention, the meaning of "a plurality" is two or more unless specifically and specifically defined otherwise.
本发明的实质是提供一种原子层刻蚀装置及应用该原子层刻蚀装置进行刻蚀的方法。在原子层刻蚀装置的反应腔室内设置有能将该反应腔室分隔成上腔室和下腔室的隔板组件，该隔板组件包括至少一个隔板，每一隔板上设有沿其厚度方向贯穿该隔板的通孔，每一隔板电性接地(以下简称“接地”)或与直流偏压电源连接，能够阻止上腔室内的带电粒子进入下腔室并允许活性中性粒子进入下腔室；并且该原子层刻蚀装置还具有用于将进入到上腔室内的气体激发为等离子体的第一等离子体产生装置，以及将进入到下腔室内的气体激发为等离子体的第二等离子体产生装置。基于该原子层刻蚀装置及原子层刻蚀方法，实现了采用活性粒子化学吸附替代传统反应气体吸附。并且，本发明中的吸附粒子为活性粒子，这不仅可以显著提高刻蚀速率，缩短刻蚀周期时间；而且可以在该化学吸附阶段大幅度节约刻蚀反应气体的使用量，降低工艺成本。另外，本发明中采用吹扫气体等离子体离子解吸附，这相对于采用离子束/中性粒子束解吸附的方式而言，不仅可以降低所用原子层刻蚀装置的复杂性，而且利于大规模生产。The essence of the present invention is to provide an atomic layer etching apparatus and a method of etching using the atomic layer etching apparatus. A separator assembly is disposed in the reaction chamber of the atomic layer etching apparatus to partition the reaction chamber into an upper chamber and a lower chamber, the separator assembly including at least one partition, each of which is provided along the partition The thickness direction penetrates through the through hole of the spacer, and each of the spacers is electrically grounded (hereinafter referred to as "grounding") or connected to a DC bias power source, which can prevent charged particles in the upper chamber from entering the lower chamber and allowing active neutrality. The particles enter the lower chamber; and the atomic layer etching apparatus further has a first plasma generating device for exciting a gas entering the upper chamber into a plasma, and exciting the gas entering the lower chamber into a plasma a second plasma generating device. Based on the atomic layer etching device and the atomic layer etching method, active particle chemical adsorption is used instead of the conventional reaction gas adsorption. Moreover, the adsorbed particles in the present invention are active particles, which not only can significantly increase the etching rate and shorten the etching cycle time; but also can greatly reduce the use amount of the etching reaction gas and reduce the process cost in the chemisorption stage. In addition, in the present invention, the purge gas plasma ion desorption is used, which can not only reduce the complexity of the atomic layer etching apparatus used but also facilitate the large scale relative to the ion beam/neutrophil beam desorption method. produce.
下面参考图1和图2详细描述根据本发明具体实施例的原子层刻蚀装置100的结构。其中，本实施例提供的原子层刻蚀装置100用于对载片201进行刻蚀，该载片201可以是Si、Ge、C等单元素载片材料件，也可以是GaAs，GaN等化合物载片材料件。 The structure of the atomic layer etching apparatus 100 according to an embodiment of the present invention will be described in detail below with reference to FIGS. 1 and 2. The atomic layer etching apparatus 100 provided in this embodiment is used for etching the carrier 201. The carrier 201 may be a unit material of Si, Ge, C, or the like, or may be a compound such as GaAs or GaN. Carrier material piece.
本实施例提供的原子层刻蚀装置100包括：反应腔体1、隔板组件203、第一等离子体产生装置、吹扫组件207、抽取装置212、支撑装置202和第二等离子体产生装置。The atomic layer etching apparatus 100 provided in this embodiment includes a reaction chamber 1, a separator assembly 203, a first plasma generating device, a purging assembly 207, an extracting device 212, a supporting device 202, and a second plasma generating device.
其中，反应腔体1限定形成反应腔室10，隔板组件203设在反应腔室10内以将反应腔室10分隔成上腔室213和下腔室214。在下腔室214的底壁上设有排气口217，抽取装置212与该排气口217直接相连，该抽取装置212可以为真空泵组。在上腔室213的顶部(即，上腔室213的顶壁)设有第一进气口216，其内设有进气喷嘴204，用于向反应腔室10内通入反应气体；在上腔室213的侧部(即，上腔室213的侧壁)设有与吹扫组件207相连的、用于向反应腔室10内供给吹扫气体的第二进气口215。可以理解的是，在实际应用中，第二进气口215还可设置在下腔室214的侧壁上。通过使第一进气口216和第二进气口215分开，可以提高对反应腔室10内的每个拐角处所残留的反应气体的排空效果，避免对下一个周期的解吸附过程造成不良影响。Wherein the reaction chamber 1 defines a reaction chamber 10, and a separator assembly 203 is disposed in the reaction chamber 10 to partition the reaction chamber 10 into an upper chamber 213 and a lower chamber 214. An exhaust port 217 is provided on the bottom wall of the lower chamber 214, and the extracting device 212 is directly connected to the exhaust port 217, and the extracting device 212 may be a vacuum pump set. At the top of the upper chamber 213 (ie, the top wall of the upper chamber 213) is provided with a first air inlet 216 having an inlet nozzle 204 for introducing a reaction gas into the reaction chamber 10; The side of the upper chamber 213 (i.e., the side wall of the upper chamber 213) is provided with a second air inlet 215 connected to the purge assembly 207 for supplying a purge gas into the reaction chamber 10. It can be understood that in practical applications, the second air inlet 215 can also be disposed on the side wall of the lower chamber 214. By separating the first intake port 216 and the second intake port 215, the evacuation effect of the reaction gas remaining at each corner in the reaction chamber 10 can be improved, thereby avoiding a defect in the desorption process in the next cycle. influences.
隔板组件203包括在上下方向上彼此间隔一定距离而设置的三个隔板303，即，第一隔板303a、第二隔板303b和第三隔板303c。相邻隔板303之间的间距为0.1mm～10mm，并且在三个隔板303中，与上腔室213内的等离子体402直接接触的隔板303(即，图2中位于最上方的第一隔板303a)接地，位于中间的第二隔板303b与直流偏压电源连接，位于最下方的第三隔板303c接地。每个隔板303厚度为0.5mm～20mm，且其上设有沿该隔板303的厚度方向贯通该隔板303的通孔302。每个隔板303上的通孔302均匀分布且尺寸相同，通孔302的形状可以呈圆形、长方体形或其他形状，每个通孔302的径向尺寸为10um～10mm。每个隔板303为金属件(如铝、不锈钢等)、石墨件或带有涂层的金属件，例如隔板303可为阳极氧化铝、包含Y2O3，TIN，Si涂层的铝件等。优选地，隔板303的材料采用石墨。 The spacer assembly 203 includes three spacers 303 which are disposed at a distance from each other in the up and down direction, that is, the first spacer 303a, the second spacer 303b, and the third spacer 303c. The spacing between adjacent partitions 303 is 0.1 mm to 10 mm, and among the three partitions 303, the partition 303 is in direct contact with the plasma 402 in the upper chamber 213 (ie, at the top in FIG. 2) The first partition 303a) is grounded, the second partition 303b located in the middle is connected to the DC bias power source, and the third partition 303c located at the bottom is grounded. Each of the partition plates 303 has a thickness of 0.5 mm to 20 mm, and is provided with a through hole 302 penetrating the partition plate 303 in the thickness direction of the partition plate 303. The through holes 302 of each of the partitions 303 are evenly distributed and of the same size. The through holes 302 may have a circular shape, a rectangular parallelepiped shape or the like, and each of the through holes 302 has a radial dimension of 10 um to 10 mm. Each of the partitions 303 is a metal member (such as aluminum, stainless steel, etc.), a graphite member or a coated metal member. For example, the separator 303 may be anodized aluminum, an aluminum member containing a Y2O3, TIN, Si coating, or the like. Preferably, the material of the separator 303 is graphite.
本发明中，隔板组件203的作用主要是排斥以及捕获带电粒子，以阻止上腔室213内的带电粒子进入下腔室214，并允许活性中性粒子403穿过通孔302达到位于下腔室214内的载片201的表面。简言之，隔板组件203被构造成阻止上腔室213内的带电粒子进入下腔室214但允许活性中性粒子进入下腔室214。可以理解，在实际应用中，隔板303的数量不限于本实施例中的三个，而是也可以为一个、两个或三个以上。无论隔板303的数量为多少个，每一个隔板303均可以被设置为接地或与直流偏压电源连接，接地是为了捕获带电粒子，接直流偏压电源是为了排斥带电粒子。并且，当隔板组件203中的隔板303的数量为多个时，多个隔板303在上下方向上彼此间隔一定距离设置，且最下方的隔板303与支撑装置202之间的距离优选为5cm～50cm。此外，在实际应用中，隔板303的数量和隔板303的形状可不做具体限定，只要保证隔板组件203可以起到阻止带电粒子通过但允许活性中性粒子通过的作用即可。In the present invention, the separator assembly 203 functions primarily to repel and trap charged particles to prevent charged particles in the upper chamber 213 from entering the lower chamber 214 and to allow the active neutral particles 403 to pass through the through holes 302 to reach the lower chamber. The surface of the slide 201 in the chamber 214. Briefly, the baffle assembly 203 is configured to prevent charged particles within the upper chamber 213 from entering the lower chamber 214 but allowing active neutral particles to enter the lower chamber 214. It can be understood that, in practical applications, the number of the partitions 303 is not limited to three in the embodiment, but may be one, two or more. Regardless of the number of spacers 303, each of the spacers 303 can be placed grounded or connected to a DC bias power source for grounding to capture charged particles, and the DC bias power source is for repelling charged particles. Moreover, when the number of the partition plates 303 in the partition plate assembly 203 is plural, the plurality of partition plates 303 are disposed at a distance from each other in the up and down direction, and the distance between the lowermost partition plate 303 and the supporting device 202 is preferably It is 5cm to 50cm. Further, in practical applications, the number of the separators 303 and the shape of the separator 303 may not be specifically limited as long as the separator assembly 203 can function to prevent passage of charged particles but allow passage of active neutral particles.
本实施例中，第一等离子体产生装置包括线圈205、第一匹配器208和第一射频电源209，用于将进入到上腔室213内的反应气体激发为等离子体402，该等离子体402为高密度等离子体，因此上腔室213也可称为高密度等离子体产生腔室。具体地，线圈205设置在位于反应腔室10的顶部的介质窗206之上，且经由第一匹配器208而与第一射频电源209相连。其中，该介质窗206起到能量耦合的作用，其材料可以为陶瓷、石英等介质。当线圈205为电感线圈时，第一射频电源209向线圈205提供射频功率，借助线圈205和介质窗206的配合而以感性耦合的方式将线圈205上的射频能量耦合加载到反应腔室10内的反应气体上，使之产生包括带电粒子和活性中性粒子403的等离子体402；也就是说，当线圈205为电感线圈时，反应腔室10内产生的等离子体为感性耦合等离子体。可以理解的是，第一等离子体产生装置的结构不限于 此，只要保证在第一等离子体产生装置的作用下，使进入到上腔室213内的反应气体可被激发为等离子体402即可；并且，第一等离子体产生装置所产生的等离子体也不必局限于感性耦合等离子体，而是也可以为其他类型的等离子体，例如容性耦合等离子体、微波等离子体、连续等离子体、脉冲等离子体等。In this embodiment, the first plasma generating device includes a coil 205, a first matching unit 208, and a first RF power source 209 for exciting a reaction gas entering the upper chamber 213 into a plasma 402, the plasma 402. It is a high density plasma, and thus the upper chamber 213 can also be referred to as a high density plasma generating chamber. Specifically, coil 205 is disposed over dielectric window 206 at the top of reaction chamber 10 and is coupled to first RF power source 209 via first matcher 208. The dielectric window 206 functions as an energy coupling, and the material thereof may be a medium such as ceramic or quartz. When the coil 205 is an inductive coil, the first RF power source 209 supplies RF power to the coil 205, and the RF energy on the coil 205 is coupled into the reaction chamber 10 in an inductively coupled manner by the cooperation of the coil 205 and the dielectric window 206. The reaction gas is caused to generate a plasma 402 comprising charged particles and active neutral particles 403; that is, when the coil 205 is an inductive coil, the plasma generated in the reaction chamber 10 is an inductively coupled plasma. It can be understood that the structure of the first plasma generating device is not limited to Therefore, as long as the action of the first plasma generating device is ensured, the reaction gas entering the upper chamber 213 can be excited into the plasma 402; and the plasma generated by the first plasma generating device is also It is not necessarily limited to inductively coupled plasma, but may be other types of plasma, such as capacitively coupled plasma, microwave plasma, continuous plasma, pulsed plasma, and the like.
本实施例中，第二等离子体产生装置包括第二射频电源211、第二匹配器210和支撑装置202，用于将进入到下腔室214内的反应气体激发为等离子体。具体地，第二射频电源211经由第二匹配器210而与支撑装置202相连以向支撑装置202提供射频功率，借助该第二匹配器210而保证第二射频电源211提供的射频功率可以满足不同的使用需求。其中可以通过控制第二等离子体产生装置，保证将等离子体中的离子405的能量控制在只与吸附有活性中性粒子403的表面原子发生反应，即，该能量只能是打断载片201的表面原子成键，但并不足以与表面原子层之下的原子发生显著的物理溅射。也就是说，下腔室214中的反应气体被激发而成的等离子体为低能等离子体。类似于第一等离子体产生装置，第二等离子体产生装置也可以为任意结构。In this embodiment, the second plasma generating apparatus includes a second RF power source 211, a second matching unit 210, and a supporting device 202 for exciting the reaction gas entering the lower chamber 214 into a plasma. Specifically, the second RF power source 211 is connected to the supporting device 202 via the second matching device 210 to provide the RF power to the supporting device 202. The second matching device 210 ensures that the RF power provided by the second RF power source 211 can meet different requirements. Demand for use. The second plasma generating device can be controlled to ensure that the energy of the ions 405 in the plasma is controlled to react only with the surface atoms to which the active neutral particles 403 are adsorbed, that is, the energy can only be interrupted by the carrier 201. The surface atoms are bonded, but not enough to cause significant physical sputtering with atoms below the surface atomic layer. That is, the plasma in which the reaction gas in the lower chamber 214 is excited is a low-energy plasma. Similar to the first plasma generating device, the second plasma generating device can also be of any configuration.
下面结合图3详细说明采用图1和图2所示原子层刻蚀装置100对载片201进行刻蚀的过程，具体包括下述步骤：The process of etching the carrier 201 by using the atomic layer etching apparatus 100 shown in FIG. 1 and FIG. 2 will be described in detail below with reference to FIG. 3, and specifically includes the following steps:
步骤S11，将表面洁净的待反应的载片201放置在支撑装置202上。In step S11, the surface-removed slide 201 to be reacted is placed on the support device 202.
步骤S12，化学吸附阶段：使反应气体通过进气喷嘴204通入反应腔室10内，本实施例中选用的刻蚀反应气体为Cl2，流量为5sccm～200sccm，反应腔室10内的气压控制在0.5mT～100mT。因为第一射频电源功率为100～1000W，支撑装置202上加载的第二射频电源功率为0W，所以反应气体可以在上腔室(即，高密度等离子体产生腔室)213内产生高密度等离子体402，即，Cl2在射频能量的激发下会发生电离和分解，其中产生的粒子主要有Cl离子、Cl原子、Cl2分子 以及电子等，这时将第一隔板303a和第三隔板303c接地，以捕获大部分带电粒子，将第二隔板303b与直流偏压电源连接且其电压设置在5～100V(优选为10～50V)，以对能量较高的Cl离子等带电粒子产生排斥作用，从而将其限制在上腔室213中，使得产生的低能活性中性粒子403(激发态Cl2分子、激发态Cl原子)在气流的带动下通过隔板组件203进入到下腔室214内并快速吸附在载片201的表面，因其为活性粒子，所以其吸附速率远大于传统刻蚀工艺中的反应气体的吸附速率。Step S12, the chemical adsorption phase: the reaction gas is introduced into the reaction chamber 10 through the inlet nozzle 204. The etching reaction gas selected in the embodiment is Cl2, the flow rate is 5 sccm to 200 sccm, and the gas pressure in the reaction chamber 10 is controlled. From 0.5mT to 100mT. Since the first RF power is 100-1000 W and the second RF power loaded on the support device 202 is 0 W, the reactive gas can generate a high-density plasma in the upper chamber (ie, the high-density plasma generating chamber) 213. The body 402, that is, Cl2 will be ionized and decomposed under the excitation of radio frequency energy, and the particles generated mainly include Cl ions, Cl atoms, and Cl2 molecules. And electrons, etc., at this time, the first separator 303a and the third separator 303c are grounded to capture most of the charged particles, and the second separator 303b is connected to the DC bias power source and the voltage is set at 5 to 100 V (preferably 10 to 50 V), which repels the charged particles such as Cl ions having higher energy, thereby confining them to the upper chamber 213, so that the generated low-energy active neutral particles 403 (excited Cl 2 molecules, excited Cl atoms) Under the action of the airflow, the separator assembly 203 enters the lower chamber 214 and is rapidly adsorbed on the surface of the carrier 201. Since it is an active particle, its adsorption rate is much larger than that of the conventional etching process. rate.
步骤S13，吹扫残留反应气体阶段：停止通入反应气体，并关闭第一等离子体产生装置；使吹扫气体经由吹扫组件207而进入到反应腔室10内，以对反应腔室10内残留的反应气体进行吹扫；并最终借助抽取装置212而将反应腔室10内的残留的反应气体和吹扫气体经由排气口217而排出。其中，吹扫气体可以是惰性气体。Step S13, purging the residual reaction gas phase: stopping the introduction of the reaction gas, and closing the first plasma generating device; allowing the purge gas to enter the reaction chamber 10 via the purge assembly 207 to be in the reaction chamber 10 The residual reaction gas is purged; and finally, the residual reaction gas and the purge gas in the reaction chamber 10 are discharged through the exhaust port 217 by means of the extraction device 212. Among them, the purge gas may be an inert gas.
步骤S14，解吸附刻蚀阶段：使反应气体经由进气喷嘴204而通入到反应腔室10内，启动第二等离子体产生装置，将进入到下腔室214内的反应气体激发为等离子体，以对吸附有活性中性粒子的载片201的表面进行辐照。具体地，本实施例中选用的反应气体为惰性气体He，流量为10～200sccm，反应腔室10的气压控制在200mT～4Torr。因为第一射频电源功率为0W，支撑装置202上加载的第二射频电源功率为30W～100W，所以反应气体可以在下腔室(即，低能等离子体产生腔室)214内产生低能(<100eV)等离子体404，以对载片201的表面进行辐照。通过控制第二射频电源功率，可以将等离子体404中的离子405的能量控制在只与吸附有活性中性粒子的表面原子发生反应、打断载片201的表面的原子成键，但并不足以与表面原子层之下的原子发生显著的物理溅射。Step S14, desorption etching step: the reaction gas is introduced into the reaction chamber 10 via the inlet nozzle 204, and the second plasma generating device is activated to excite the reaction gas entering the lower chamber 214 into a plasma. The surface of the slide 201 on which the active neutral particles are adsorbed is irradiated. Specifically, the reaction gas selected in the present embodiment is an inert gas He, the flow rate is 10 to 200 sccm, and the gas pressure of the reaction chamber 10 is controlled at 200 mT to 4 Torr. Since the first RF power is 0 W and the second RF power applied to the support device 202 is 30 W to 100 W, the reactive gas can generate low energy (<100 eV) in the lower chamber (ie, the low energy plasma generating chamber) 214. The plasma 404 is irradiated to the surface of the slide 201. By controlling the power of the second RF power source, the energy of the ions 405 in the plasma 404 can be controlled to react only with the surface atoms adsorbing the active neutral particles, and the atoms of the surface of the carrier 201 are broken, but insufficient. Significant physical sputtering occurs with atoms below the surface atomic layer.
步骤S15：使吹扫气体经由吹扫组件207进入反应腔室10，并最终通过抽取装置212使反应腔室10内的残留的反应气体和吹扫气体经由 排气口217而排出，以排空反应腔室10内的刻蚀副产物406。Step S15: the purge gas is introduced into the reaction chamber 10 via the purge assembly 207, and finally the residual reaction gas and purge gas in the reaction chamber 10 are passed through the extraction device 212. The exhaust port 217 is exhausted to evacuate the etch byproduct 406 in the reaction chamber 10.
经过步骤S11～步骤S15，载片201被刻蚀一层表面原子层。为了实现不同深度的刻蚀，重复步骤S12～S15，以实现载片201的表面被一层原子、一层原子地刻蚀，直至刻蚀深度达到预设值。也就是说，本发明实施例提供的刻蚀方法可达到原子层级的刻蚀精度，所谓原子层级指的是在对载片201的表面进行刻蚀时，可以一层原子、一层原子地逐层刻蚀。After step S11 to step S15, the carrier 201 is etched with a layer of surface atoms. In order to achieve different depths of etching, steps S12 to S15 are repeated to realize that the surface of the carrier 201 is etched by one layer of atoms and one layer of atoms until the etching depth reaches a preset value. That is to say, the etching method provided by the embodiment of the present invention can achieve the etching precision of the atomic level. The so-called atomic level refers to the layer of atoms and one layer of atoms when etching the surface of the carrier 201. Layer etching.
根据本发明实施例的原子层刻蚀装置100，通过设置隔板组件203并使其接地或者接直流偏压电源，可以实现等离子体中的活性中性粒子与带电粒子进行分离，使活性中性粒子穿过隔板组件203并吸附在位于下腔室214内的载片201的表面，从而实现了采用活性粒子化学吸附替代传统反应气体吸附。由于本发明实施例中的吸附粒子为活性粒子，因而不仅可以显著提高刻蚀速率，缩短刻蚀周期时间；而且因活性粒子吸附能力强而可以在该化学吸附阶段大幅度节约刻蚀反应气体的使用量，降低工艺成本。另外，由于本发明实施例中采用吹扫气体等离子体离子解吸附，因而相对于采用离子束/中性粒子束解吸附的装置而言，可以降低装置的复杂性，获得结构简单可靠的原子层刻蚀装置100，从而利于大规模生产应用。According to the atomic layer etching apparatus 100 of the embodiment of the present invention, by disposing the spacer assembly 203 and grounding or connecting a DC bias power source, separation of active neutral particles from charged particles in the plasma can be achieved, and the active neutrality is achieved. The particles pass through the separator assembly 203 and are adsorbed on the surface of the slide 201 located in the lower chamber 214, thereby realizing the use of active particle chemisorption instead of the conventional reaction gas adsorption. Since the adsorbed particles in the embodiment of the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and because the active particles have strong adsorption capacity, the etching reaction gas can be greatly saved in the chemisorption stage. The amount of use reduces the cost of the process. In addition, since the purge gas plasma ion desorption is used in the embodiment of the invention, the complexity of the device can be reduced compared to the device using the ion beam/neutrophil beam desorption, and the atomic layer with simple and reliable structure can be obtained. The device 100 is etched to facilitate large scale production applications.
作为另一个技术方案，本发明还提供了一种原子层刻蚀方法。下面参考图4详细说明本发明一个具体实施例提供的原子层刻蚀方法，该方法借助于本发明前述实施例提供的原子层刻蚀装置而实施，具体包括如下步骤：As another technical solution, the present invention also provides an atomic layer etching method. An atomic layer etching method according to an embodiment of the present invention is described in detail with reference to FIG. 4, which is implemented by the atomic layer etching apparatus provided by the foregoing embodiment of the present invention, and specifically includes the following steps:
S1：将待反应的载片放置于反应腔室内的支撑装置上。S1: The slide to be reacted is placed on a support device in the reaction chamber.
S2：向反应腔室内通入反应气体，将第一射频电源的输出功率设置为100W～1000W，即启动第一等离子体产生装置，以将进入到上腔室内的反应气体激发为高密度等离子体，并使等离子体中的活性中性粒子通 过隔板组件从上腔室进入到下腔室内且吸附在载片的表面上，等离子体中的带电粒子被隔板组件阻挡而被阻止由上腔室进入到下腔室。也就是说，本实施例中的反应腔室由隔板组件分隔成上腔室和下腔室，隔板组件具有阻止上腔室内的带电粒子进入到下腔室、但允许上腔室内的活性中性粒子进入下腔室的作用。S2: introducing a reaction gas into the reaction chamber, setting the output power of the first RF power source to 100 W to 1000 W, that is, starting the first plasma generating device to excite the reaction gas entering the upper chamber into a high-density plasma And pass active neutral particles in the plasma The baffle assembly enters the lower chamber from the upper chamber and is adsorbed on the surface of the slide, and the charged particles in the plasma are blocked by the baffle assembly and prevented from entering the lower chamber from the upper chamber. That is, the reaction chamber in this embodiment is partitioned into an upper chamber and a lower chamber by a separator assembly having a function of preventing charged particles in the upper chamber from entering the lower chamber but allowing the upper chamber to be activated. The role of neutral particles entering the lower chamber.
在本发明的具体示例中，隔板组件可以包括三个隔板，且三个隔板在上下方向上彼此间隔设置，设置在最上方和最下方的隔板接地，中间的隔板与直流偏压电源连接。其中，直流偏压电源的输出电压为5～100V，优选为10～50V。In a specific example of the present invention, the spacer assembly may include three spacers, and the three spacers are spaced apart from each other in the up and down direction, the spacers disposed at the uppermost and lowermost portions are grounded, and the intermediate spacers and the DC bias are Press the power supply connection. The output voltage of the DC bias power supply is 5 to 100 V, preferably 10 to 50 V.
在本步骤S2中，反应气体经过设置于上腔室顶部的第一进气口内的进气喷嘴而进入到上腔室内，并且反应气体可以为CF4，CHF3，CH2F2，CH3F，Cl2,HF，HCl，HBr，SF6，NF3，Br2，BCl3，SiCl4，O2、SiO2中的至少一种。优选地，本步骤S2的反应气体为Cl2，且流量为5～200sccm。In this step S2, the reaction gas enters the upper chamber through an intake nozzle disposed in the first intake port at the top of the upper chamber, and the reaction gas may be CF4, CHF3, CH2F2, CH3F, Cl2, HF, HCl. At least one of HBr, SF6, NF3, Br2, BCl3, SiCl4, O2, SiO2. Preferably, the reaction gas in the step S2 is Cl2, and the flow rate is 5 to 200 sccm.
S3：停止通入反应气体，并关闭第一等离子体产生装置，即将第一射频电源的输出功率设置为0。S3: stopping the introduction of the reaction gas, and turning off the first plasma generating device, that is, setting the output power of the first RF power source to zero.
S4：将吹扫气体通入到反应腔室内，使残留在反应腔室内的反应气体经由排气口而排出。具体地，可以通过吹扫组件将吹扫气体通入到反应腔室内，例如使反应气体经过设置于上腔室的侧部的第二进气口通入到反应腔室内，并最终利用抽取装置抽出反应残留物。S4: The purge gas is introduced into the reaction chamber, and the reaction gas remaining in the reaction chamber is discharged through the exhaust port. Specifically, the purge gas can be introduced into the reaction chamber through the purging assembly, for example, the reaction gas is introduced into the reaction chamber through the second air inlet disposed at the side of the upper chamber, and finally the extraction device is utilized. The reaction residue was withdrawn.
S5：停止通入吹扫气体。S5: Stop the purge gas.
S6：将反应气体通入到反应腔室内，将第二射频电源的输出功率设置为30W～100W，即启动第二等离子体产生装置，将进入到下腔室内的反应气体激发为低能等离子体，以对吸附有活性中性粒子的载片表面进行辐照。S6: the reaction gas is introduced into the reaction chamber, and the output power of the second RF power source is set to 30 W to 100 W, that is, the second plasma generating device is activated, and the reaction gas entering the lower chamber is excited into a low-energy plasma. The surface of the slide to which the active neutral particles are adsorbed is irradiated.
本步骤S6中的反应气体为惰性气体，例如可以为He，Ni，Ar， Kr，Xe中的至少一种。优选地，该反应气体可以为He，其流量为10～200sccm。The reaction gas in this step S6 is an inert gas, and may be, for example, He, Ni, Ar, At least one of Kr, Xe. Preferably, the reaction gas may be He having a flow rate of 10 to 200 sccm.
S7：停止通入反应气体，并关闭第二等离子体产生装置，即将第二射频电源的输出功率设置为0。S7: Stop the introduction of the reaction gas, and turn off the second plasma generating device, that is, set the output power of the second RF power source to zero.
S8：将吹扫气体通入到反应腔室内，使残留在反应腔室内的反应气体经由排气口而排出。S8: The purge gas is introduced into the reaction chamber, and the reaction gas remaining in the reaction chamber is discharged through the exhaust port.
S9：停止通入吹扫气体。S9: Stop the purge gas.
重复上述步骤S2～S9，直至刻蚀深度达到预设值。The above steps S2 to S9 are repeated until the etching depth reaches a preset value.
本发明实施例提供的原子层刻蚀方法，由于能够实现等离子体中的活性中性粒子与带电粒子进行分离，使活性中性粒子能够吸附到载片的表面，从而实现了采用活性粒子化学吸附替代传统反应气体吸附。由于本发明实施例中的吸附粒子为活性粒子，因而不仅可以显著提高刻蚀速率，缩短刻蚀周期时间；而且因活性粒子吸附能力强而可以在该化学吸附阶段大幅度节约刻蚀反应气体的使用量，降低工艺成本。另外，由于本发明实施例中采用吹扫气体等离子体离子解吸附，因而相对于采用离子束/中性粒子束解吸附的方式而言，不仅可以降低所用原子层刻蚀装置的复杂性，而且利于大规模生产。The atomic layer etching method provided by the embodiment of the invention can realize the separation of the active neutral particles in the plasma and the charged particles, so that the active neutral particles can be adsorbed to the surface of the carrier sheet, thereby realizing the chemical adsorption of the active particles. Instead of traditional reactive gas adsorption. Since the adsorbed particles in the embodiment of the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and because the active particles have strong adsorption capacity, the etching reaction gas can be greatly saved in the chemisorption stage. The amount of use reduces the cost of the process. In addition, since the purge gas plasma ion desorption is used in the embodiment of the present invention, the complexity of the atomic layer etching apparatus used can be reduced not only in the manner of desorption of the ion beam/neutrophil beam, but also Conducive to mass production.
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In the description of the present specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" and the like means a specific feature described in connection with the embodiment or example. A structure, material or feature is included in at least one embodiment or example of the invention. In the present specification, the schematic representation of the above terms is not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. In addition, various embodiments or examples described in the specification, as well as features of various embodiments or examples, may be combined and combined.
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述 实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。 Although an embodiment of the invention has been shown and described above, it will be understood that The embodiments are exemplified and are not to be construed as limiting the invention, and variations, modifications, substitutions and variations of the above-described embodiments are possible within the scope of the invention.

Claims (21)

  1. 一种原子层刻蚀装置，其特征在于，包括：An atomic layer etching apparatus, comprising:
    反应腔体，所述反应腔体内具有反应腔室；a reaction chamber having a reaction chamber therein;
    隔板组件，所述隔板组件设在所述反应腔室内且将所述反应腔室分隔成上腔室和下腔室，所述隔板组件包括至少一个隔板，所述隔板上设有沿其厚度方向贯穿该隔板的通孔，所述隔板接地或与直流偏压电源连接，以阻止所述上腔室内的带电粒子进入所述下腔室和允许活性中性粒子进入所述下腔室；a separator assembly, the separator assembly is disposed in the reaction chamber and partitions the reaction chamber into an upper chamber and a lower chamber, the separator assembly including at least one partition, the partition is provided a through hole extending through the separator in a thickness direction thereof, the separator being grounded or connected to a DC bias power source to prevent charged particles in the upper chamber from entering the lower chamber and allowing active neutral particles to enter Describe the chamber;
    所述上腔室具有用于向所述反应腔室内供给气体的进气口；The upper chamber has an air inlet for supplying a gas into the reaction chamber;
    所述下腔室具有用于放置载片的支撑装置，和用于从所述反应腔室内排气的排气口；The lower chamber has support means for placing a slide, and an exhaust port for exhausting from the reaction chamber;
    第一等离子体产生装置，用于将进入到所述上腔室内的气体激发为等离子体；a first plasma generating device for exciting a gas entering the upper chamber into a plasma;
    第二等离子体产生装置，用于将进入到所述下腔室内的气体激发为等离子体。A second plasma generating device for exciting a gas entering the lower chamber into a plasma.
  2. 根据权利要求1所述的原子层刻蚀装置，其特征在于，所述隔板为多个，且所述多个隔板在上下方向上彼此间隔一定距离而设置，并且位于在最上方的隔板接地。The atomic layer etching apparatus according to claim 1, wherein the plurality of spacers are plural, and the plurality of spacers are disposed at a distance from each other in the up and down direction, and are located at an uppermost interval. The board is grounded.
  3. 根据权利要求2所述的原子层刻蚀装置，其特征在于，最下方的隔板与所述支撑装置之间的距离为5cm～50cmThe atomic layer etching apparatus according to claim 2, wherein a distance between the lowermost spacer and the supporting means is 5 cm to 50 cm
  4. 根据权利要求2所述的原子层刻蚀装置，其特征在于，相邻隔板之间的间距为0.1mm～10mm。 The atomic layer etching apparatus according to claim 2, wherein a pitch between adjacent spacers is 0.1 mm to 10 mm.
  5. 根据权利要求1所述的原子层刻蚀装置，其特征在于，所述隔板的厚度为0.5mm～20mm。The atomic layer etching apparatus according to claim 1, wherein the separator has a thickness of 0.5 mm to 20 mm.
  6. 根据权利要求1所述的原子层刻蚀装置，其特征在于，所述通孔的径向尺寸为10um～10mm。The atomic layer etching apparatus according to claim 1, wherein the through hole has a radial dimension of 10 um to 10 mm.
  7. 根据权利要求1所述的原子层刻蚀装置，其特征在于，所述隔板为金属件、石墨件或带有涂层的金属件。The atomic layer etching apparatus according to claim 1, wherein the spacer is a metal member, a graphite member or a coated metal member.
  8. 根据权利要求1所述的原子层刻蚀装置，其特征在于，所述第一等离子体产生装置包括线圈和第一射频电源，所述线圈设在位于所述反应腔室顶部的介质窗上；所述第二等离子体产生装置包括第二射频电源，所述第二射频电源与所述支撑装置相连。The atomic layer etching apparatus according to claim 1, wherein the first plasma generating device comprises a coil and a first RF power source, and the coil is disposed on a dielectric window located at a top of the reaction chamber; The second plasma generating device includes a second RF power source, and the second RF power source is coupled to the support device.
  9. 根据权利要求1所述的原子层刻蚀装置，其特征在于，所述上腔室顶部设有第一进气口，用于向所述反应腔室内通入反应气体；所述上腔室侧部设有第二进气口，用于向所述反应腔室内通入吹扫气体。The atomic layer etching apparatus according to claim 1, wherein a top of the upper chamber is provided with a first air inlet for introducing a reaction gas into the reaction chamber; and the upper chamber side is A second air inlet is provided for introducing a purge gas into the reaction chamber.
  10. 一种采用如权利要求1所述的原子层刻蚀装置的原子层刻蚀方法，其特征在于，包括如下步骤：An atomic layer etching method using the atomic layer etching apparatus according to claim 1, comprising the steps of:
    S1：将待反应的载片放置于支撑装置上；S1: placing the slide to be reacted on the support device;
    S2：将反应气体通入到反应腔室内，启动第一等离子体产生装置将进入到上腔室内的反应气体激发为等离子体，其中等离子体中的活性中性粒子通过隔板组件从所述上腔室进入到下腔室内且吸附在载片的表面上，等离子体中的带电粒子由隔板组件阻止从所述上腔室进入所述下腔室；S2: introducing a reaction gas into the reaction chamber, starting the first plasma generating device to excite the reaction gas entering the upper chamber into a plasma, wherein the active neutral particles in the plasma pass through the separator assembly from the upper portion The chamber enters the lower chamber and is adsorbed on the surface of the slide, and the charged particles in the plasma are prevented from entering the lower chamber from the upper chamber by the separator assembly;
    S3：停止通入反应气体，并关闭第一等离子体产生装置；S3: stopping the introduction of the reaction gas, and turning off the first plasma generating device;
    S4：将吹扫气体通入到反应腔室内，并使反应残留物经排气口而排出反 应腔室；S4: introducing a purge gas into the reaction chamber, and discharging the reaction residue through the exhaust port Chamber
    S5：停止通入吹扫气体；S5: stopping the introduction of the purge gas;
    S6：将反应气体通入到反应腔室内，启动第二等离子体产生装置将进入到所述下腔室内的反应气体激发为等离子体，以对吸附有活性中性粒子的载片表面进行辐照；S6: introducing a reaction gas into the reaction chamber, and starting the second plasma generating device to excite the reaction gas entering the lower chamber into a plasma to irradiate the surface of the slide on which the active neutral particles are adsorbed ;
    S7：停止通入反应气体，并关闭第二等离子体产生装置；S7: stopping the introduction of the reaction gas, and turning off the second plasma generating device;
    S8：将吹扫气体通入到反应腔室内，并使反应残留物经排气口而排出反应腔室；S8: passing a purge gas into the reaction chamber, and discharging the reaction residue through the exhaust port to the reaction chamber;
    S9：停止通入吹扫气体；S9: stopping the introduction of the purge gas;
    重复上述步骤S2～S8，直至刻蚀深度达到预设值。The above steps S2 to S8 are repeated until the etching depth reaches a preset value.
  11. 根据权利要求10所述的原子层刻蚀方法，其特征在于，所述第一等离子体产生装置包括线圈和第一射频电源，所述线圈设在位于所述反应腔室顶部的介质窗上，所述线圈与所述第一射频电源相连，所述步骤S2中启动第一等离子体产生装置为将所述第一射频电源的输出功率设置为100W～1000W，所述步骤S3关闭第一等离子体产生装置为将所述第一射频电源的输出功率设置为0。The atomic layer etching method according to claim 10, wherein the first plasma generating device comprises a coil and a first RF power source, and the coil is disposed on a dielectric window located at a top of the reaction chamber, The coil is connected to the first RF power source, and the first plasma generating device is activated in the step S2 to set the output power of the first RF power source to 100W to 1000W, and the step S3 turns off the first plasma. The generating device is configured to set the output power of the first radio frequency power source to zero.
  12. 根据权利要求10所述的原子层刻蚀方法，其特征在于，所述第二等离子体产生装置包括第二射频电源，所述第二射频电源与所述支撑装置相连，所述步骤S5启动第二等离子体产生装置为将所述第二射频电源的输出功率设置为30W～100W，所述步骤S7关闭第二等离子体产生装置为将所述第二射频电源的输出功率设置为0。The atomic layer etching method according to claim 10, wherein the second plasma generating device comprises a second RF power source, the second RF power source is connected to the supporting device, and the step S5 starts The second plasma generating device sets the output power of the second RF power source to 30 W to 100 W, and the step S7 turns off the second plasma generating device to set the output power of the second RF power source to 0.
  13. 根据权利要求10所述的原子层刻蚀方法，其特征在于，所述步骤S2的反应气体为CF4，CHF3，CH2F2，CH3F，Cl2,HF，HCl，HBr，SF6，NF3，Br2，BCl3，SiCl4，O2、SiO2中的至少一种。 The atomic layer etching method according to claim 10, wherein the reaction gas of the step S2 is CF4, CHF3, CH2F2, CH3F, Cl2, HF, HCl, HBr, SF6, NF3, Br2, BCl3, SiCl4. At least one of O2 and SiO2.
  14. 根据权利要求13所述的原子层刻蚀方法，其特征在于，所述步骤S2的反应气体为Cl2，且流量为5～200sccm。The atomic layer etching method according to claim 13, wherein the reaction gas in the step S2 is Cl2, and the flow rate is 5 to 200 sccm.
  15. 根据权利要求10所述的原子层刻蚀方法，其特征在于，所述步骤S6的反应气体为惰性气体。The atomic layer etching method according to claim 10, wherein the reaction gas of the step S6 is an inert gas.
  16. 根据权利要求15所述的原子层刻蚀方法，其特征在于，所述步骤S6的惰性气体为He，Ni，Ar，Kr，Xe中的至少一种。The atomic layer etching method according to claim 15, wherein the inert gas in the step S6 is at least one of He, Ni, Ar, Kr, and Xe.
  17. 根据权利要求16所述的原子层刻蚀方法，其特征在于，所述步骤S6的反应气体为He，且流量为10～200sccm。The atomic layer etching method according to claim 16, wherein the reaction gas in the step S6 is He and the flow rate is 10 to 200 sccm.
  18. 根据权利要求10所述的原子层刻蚀方法，其特征在于，所述上腔室顶部设有第一进气口，所述反应气体经由其进入到所述反应腔室内；所述上腔室侧部设有第二进气口，所述吹扫气体经由其进入到所述反应腔室内。The atomic layer etching method according to claim 10, wherein a top of the upper chamber is provided with a first air inlet through which the reaction gas enters the reaction chamber; the upper chamber The side is provided with a second intake port through which the purge gas enters the reaction chamber.
  19. 根据权利要求10所述的原子层刻蚀方法，其特征在于，所述隔板组件包括三个隔板，且所述三个隔板在上下方向上彼此间隔一定距离设置，并且设置在最上方和最下方的隔板接地，中间的隔板与直流偏压电源连接。The atomic layer etching method according to claim 10, wherein the spacer assembly comprises three spacers, and the three spacers are disposed at a distance from each other in the up and down direction, and are disposed at the uppermost portion. The bottommost partition is grounded, and the middle partition is connected to a DC bias power supply.
  20. 根据权利要求10-19中任意一项所述的原子层刻蚀方法，其特征在于，所述直流偏压电源的输出电压为5～100V。The atomic layer etching method according to any one of claims 10 to 19, wherein the output voltage of the DC bias power source is 5 to 100V.
  21. 根据权利要求20所述的原子层刻蚀方法，其特征在于，所述直流偏压电源的输出电压为10～50V。 The atomic layer etching method according to claim 20, wherein the output voltage of the DC bias power source is 10 to 50V.
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