WO2016029817A1 - Dispositif de gravure de couche atomique et procédé de gravure de couche atomique l'utilisant - Google Patents

Dispositif de gravure de couche atomique et procédé de gravure de couche atomique l'utilisant Download PDF

Info

Publication number
WO2016029817A1
WO2016029817A1 PCT/CN2015/087512 CN2015087512W WO2016029817A1 WO 2016029817 A1 WO2016029817 A1 WO 2016029817A1 CN 2015087512 W CN2015087512 W CN 2015087512W WO 2016029817 A1 WO2016029817 A1 WO 2016029817A1
Authority
WO
WIPO (PCT)
Prior art keywords
atomic layer
chamber
layer etching
reaction
plasma
Prior art date
Application number
PCT/CN2015/087512
Other languages
English (en)
Chinese (zh)
Inventor
罗巍
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Priority to SG11201701159QA priority Critical patent/SG11201701159QA/en
Priority to JP2017511633A priority patent/JP6454409B2/ja
Priority to KR1020177008420A priority patent/KR101917304B1/ko
Publication of WO2016029817A1 publication Critical patent/WO2016029817A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to the field of etching, and in particular to an atomic layer etching apparatus and an atomic layer etching method using the same.
  • Atomic Layer Deposition is a mainstream process for preparing high-k gate dielectric layers of field effect transistors, and has been widely used in the semiconductor industry.
  • the corresponding subtractive process, Atomic Layer Etching (ALE) was also developed with the application requirements.
  • the GaAs atomic layer engraving was first implemented by alternating the two processes of Cl2 adsorption and electron beam etching. eclipse.
  • the atomic layer etching technique in the related art has disadvantages such as long etching period, low etching efficiency, and complicated equipment.
  • the present invention aims to solve at least one of the technical problems in the related art to some extent. Accordingly, it is an object of the present invention to provide an atomic layer etching apparatus which can significantly increase the etching rate and shorten the etching cycle time, and the atomic layer etching apparatus has a simple structure.
  • Another object of the present invention is to provide an atomic layer etching method using the atomic layer etching apparatus provided by the present invention, which can also significantly improve the etching rate, shorten the etching cycle time, and reduce the complexity of the device used.
  • An atomic layer etching apparatus comprising: a reaction chamber having a reaction chamber therein; a separator assembly, the separator assembly being disposed in the reaction chamber and reacting the reaction
  • the chamber is partitioned into an upper chamber and a lower chamber, the partition assembly comprising at least one partition, the partition being provided with a through hole extending through the partition in a thickness direction thereof, the partition being grounded or DC a bias power supply connection to prevent charged particles in the upper chamber from entering the lower chamber And allowing active neutral particles to enter the lower chamber;
  • the upper chamber having an inlet for supplying gas into the reaction chamber;
  • the lower chamber having support means for placing a slide, And an exhaust port for exhausting from the reaction chamber; a first plasma generating device for exciting a gas entering the upper chamber into a plasma; and a second plasma generating device for The gas entering the lower chamber is excited into a plasma.
  • the plurality of partition plates are disposed, and the plurality of partition plates are disposed at a distance from each other in the up and down direction, and the partition plate located at the uppermost portion is grounded.
  • the spacing between adjacent partitions is 0.1 mm to 10 mm.
  • the separator has a thickness of 0.5 mm to 20 mm.
  • the through hole has a radial dimension of 10 um to 10 mm.
  • the partition is a metal piece, a graphite piece or a coated metal piece.
  • the first plasma generating device comprises a coil and a first RF power source, the coil is disposed on a dielectric window located at a top of the reaction chamber; and the second plasma generating device comprises a second RF power source The second RF power source is coupled to the support device.
  • top of the upper chamber is provided with a first air inlet for introducing a reaction gas into the reaction chamber; the side of the upper chamber is provided with a second air inlet for the reaction A purge gas is introduced into the chamber.
  • the atomic layer etching device provided by the invention can realize the separation of active neutral particles and charged particles in the plasma by providing a separator assembly in the reaction chamber and grounding or connecting a DC bias power source, so that the active neutrality is achieved.
  • the particles pass through the separator assembly and are adsorbed on the surface of the slide located in the lower chamber, thereby realizing the use of active particle chemisorption instead of the conventional reaction gas adsorption. Since the adsorbed particles in the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and the amount of etching reaction gas can be greatly saved in the chemisorption stage due to the strong adsorption capacity of the active particles. , reduce process costs.
  • the purge gas plasma ion desorption is used in the present invention, the ion is used.
  • the complexity of the device can be reduced, and an atomic layer etching device with a simple and reliable structure can be obtained, thereby facilitating mass production applications.
  • the present invention further provides a method for performing atomic layer etching using the atomic layer etching apparatus provided by the present invention, which comprises the following steps: S1: placing a slide to be reacted on a supporting device; S2 Passing a reaction gas into the reaction chamber, initiating the first plasma generating device to excite the reaction gas entering the upper chamber into a plasma, wherein the active neutral particles in the plasma pass through the separator assembly from the upper chamber The chamber enters the lower chamber and is adsorbed on the surface of the slide, and the charged particles in the plasma are prevented from entering the lower chamber from the upper chamber by the partition assembly; S3: stopping the introduction of the reaction gas, and closing the first a plasma generating device; S4: introducing a purge gas into the reaction chamber, and discharging the reaction residue through the exhaust port to the reaction chamber; S5: stopping the flow of the purge gas; S6: passing the reaction gas Into the reaction chamber, the second plasma generating device is activated to excite the reaction gas entering the lower chamber into a plasma,
  • the first plasma generating device comprises a coil and a first RF power source, the coil is disposed on a dielectric window located at a top of the reaction chamber, and the coil is connected to the first RF power source, the step The first plasma generating device is activated in S2 to set the output power of the first RF power source to 100 W to 1000 W, and the step S3 turns off the first plasma generating device to set the output power of the first RF power source to 0.
  • the second plasma generating device includes a second RF power source, the second RF power source is connected to the supporting device, and the step S5 starts the second plasma generating device to output the second RF power source.
  • the power is set to 30W to 100W, and the step S7 turns off the second plasma generating device to set the output power of the second RF power source to zero.
  • reaction gases of the step S2 are CF4, CHF3, CH2F2, CH3F, At least one of Cl2, HF, HCl, HBr, SF6, NF3, Br2, BCl3, SiCl4, O2, SiO2.
  • the reaction gas in the step S2 is Cl2, and the flow rate is 5 to 200 sccm.
  • reaction gas of the step S6 is an inert gas.
  • the inert gas in the step S6 is at least one of He, Ni, Ar, Kr, and Xe.
  • the reaction gas in the step S6 is He, and the flow rate is 10 to 200 sccm.
  • the top of the upper chamber is provided with a first air inlet through which the reaction gas enters the reaction chamber; the side of the upper chamber is provided with a second air inlet, the purge gas Via it into the reaction chamber.
  • the baffle assembly includes three baffles, and the three baffles are disposed at a distance from each other in the up and down direction, and the partitions disposed at the uppermost and lowermost portions are grounded, and the intermediate partition and the DC bias are Press the power supply connection.
  • the output voltage of the DC bias power supply is 5 to 100V. Preferably, the output voltage of the DC bias power supply is 10 to 50V.
  • the atomic layer etching method provided by the invention can realize the separation of the active neutral particles from the charged particles in the plasma, so that the active neutral particles can be adsorbed to the surface of the carrier sheet, thereby realizing the replacement of the traditional particles by active particle chemisorption.
  • the reaction gas is adsorbed. Since the adsorbed particles in the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and the amount of etching reaction gas can be greatly saved in the chemisorption stage due to the strong adsorption capacity of the active particles. , reduce process costs.
  • the purge gas plasma ion desorption is used in the present invention, the complexity of the atomic layer etching apparatus used can be reduced, and it is advantageous for the method of desorbing the ion beam/neutral particle beam. Scale production.
  • FIG. 1 is a schematic view of an atomic layer etching apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic view of a spacer assembly in accordance with an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a process of etching by using an atomic layer etching apparatus provided by an embodiment of the present invention
  • FIG. 4 is a flow chart of an etching method in accordance with an embodiment of the present invention.
  • Atomic layer etching apparatus 100
  • Reaction chamber 1 reaction chamber 10, upper chamber 213, lower chamber 214, intake nozzle 204, first intake port 216, second intake port 215, exhaust port 217,
  • Purge assembly 207 extraction device 212, support device 202, second RF power source 211, second matcher 210, slide 201, plasma 402, active neutral particles 403, plasma 404, ions 405, etch byproducts 406.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • the meaning of "a plurality” is two or more unless specifically and specifically defined otherwise.
  • the essence of the present invention is to provide an atomic layer etching apparatus and a method of etching using the atomic layer etching apparatus.
  • a separator assembly is disposed in the reaction chamber of the atomic layer etching apparatus to partition the reaction chamber into an upper chamber and a lower chamber, the separator assembly including at least one partition, each of which is provided along the partition The thickness direction penetrates through the through hole of the spacer, and each of the spacers is electrically grounded (hereinafter referred to as "grounding") or connected to a DC bias power source, which can prevent charged particles in the upper chamber from entering the lower chamber and allowing active neutrality.
  • grounding electrically grounded
  • active particle chemical adsorption is used instead of the conventional reaction gas adsorption.
  • the adsorbed particles in the present invention are active particles, which not only can significantly increase the etching rate and shorten the etching cycle time; but also can greatly reduce the use amount of the etching reaction gas and reduce the process cost in the chemisorption stage.
  • the purge gas plasma ion desorption is used, which can not only reduce the complexity of the atomic layer etching apparatus used but also facilitate the large scale relative to the ion beam/neutrophil beam desorption method. produce.
  • the structure of the atomic layer etching apparatus 100 according to an embodiment of the present invention will be described in detail below with reference to FIGS. 1 and 2.
  • the atomic layer etching apparatus 100 provided in this embodiment is used for etching the carrier 201.
  • the carrier 201 may be a unit material of Si, Ge, C, or the like, or may be a compound such as GaAs or GaN. Carrier material piece.
  • the atomic layer etching apparatus 100 includes a reaction chamber 1, a separator assembly 203, a first plasma generating device, a purging assembly 207, an extracting device 212, a supporting device 202, and a second plasma generating device.
  • reaction chamber 1 defines a reaction chamber 10
  • a separator assembly 203 is disposed in the reaction chamber 10 to partition the reaction chamber 10 into an upper chamber 213 and a lower chamber 214.
  • An exhaust port 217 is provided on the bottom wall of the lower chamber 214, and the extracting device 212 is directly connected to the exhaust port 217, and the extracting device 212 may be a vacuum pump set.
  • first air inlet 216 having an inlet nozzle 204 for introducing a reaction gas into the reaction chamber 10
  • the side of the upper chamber 213 i.e., the side wall of the upper chamber 213) is provided with a second air inlet 215 connected to the purge assembly 207 for supplying a purge gas into the reaction chamber 10.
  • the second air inlet 215 can also be disposed on the side wall of the lower chamber 214.
  • the spacer assembly 203 includes three spacers 303 which are disposed at a distance from each other in the up and down direction, that is, the first spacer 303a, the second spacer 303b, and the third spacer 303c.
  • the spacing between adjacent partitions 303 is 0.1 mm to 10 mm, and among the three partitions 303, the partition 303 is in direct contact with the plasma 402 in the upper chamber 213 (ie, at the top in FIG. 2)
  • the first partition 303a) is grounded, the second partition 303b located in the middle is connected to the DC bias power source, and the third partition 303c located at the bottom is grounded.
  • Each of the partition plates 303 has a thickness of 0.5 mm to 20 mm, and is provided with a through hole 302 penetrating the partition plate 303 in the thickness direction of the partition plate 303.
  • the through holes 302 of each of the partitions 303 are evenly distributed and of the same size.
  • the through holes 302 may have a circular shape, a rectangular parallelepiped shape or the like, and each of the through holes 302 has a radial dimension of 10 um to 10 mm.
  • Each of the partitions 303 is a metal member (such as aluminum, stainless steel, etc.), a graphite member or a coated metal member.
  • the separator 303 may be anodized aluminum, an aluminum member containing a Y2O3, TIN, Si coating, or the like.
  • the material of the separator 303 is graphite.
  • the separator assembly 203 functions primarily to repel and trap charged particles to prevent charged particles in the upper chamber 213 from entering the lower chamber 214 and to allow the active neutral particles 403 to pass through the through holes 302 to reach the lower chamber.
  • the baffle assembly 203 is configured to prevent charged particles within the upper chamber 213 from entering the lower chamber 214 but allowing active neutral particles to enter the lower chamber 214. It can be understood that, in practical applications, the number of the partitions 303 is not limited to three in the embodiment, but may be one, two or more.
  • each of the spacers 303 can be placed grounded or connected to a DC bias power source for grounding to capture charged particles, and the DC bias power source is for repelling charged particles.
  • the plurality of partition plates 303 are disposed at a distance from each other in the up and down direction, and the distance between the lowermost partition plate 303 and the supporting device 202 is preferably It is 5cm to 50cm.
  • the number of the separators 303 and the shape of the separator 303 may not be specifically limited as long as the separator assembly 203 can function to prevent passage of charged particles but allow passage of active neutral particles.
  • the first plasma generating device includes a coil 205, a first matching unit 208, and a first RF power source 209 for exciting a reaction gas entering the upper chamber 213 into a plasma 402, the plasma 402. It is a high density plasma, and thus the upper chamber 213 can also be referred to as a high density plasma generating chamber.
  • coil 205 is disposed over dielectric window 206 at the top of reaction chamber 10 and is coupled to first RF power source 209 via first matcher 208.
  • the dielectric window 206 functions as an energy coupling, and the material thereof may be a medium such as ceramic or quartz.
  • the first RF power source 209 supplies RF power to the coil 205, and the RF energy on the coil 205 is coupled into the reaction chamber 10 in an inductively coupled manner by the cooperation of the coil 205 and the dielectric window 206.
  • the reaction gas is caused to generate a plasma 402 comprising charged particles and active neutral particles 403; that is, when the coil 205 is an inductive coil, the plasma generated in the reaction chamber 10 is an inductively coupled plasma.
  • the structure of the first plasma generating device is not limited to Therefore, as long as the action of the first plasma generating device is ensured, the reaction gas entering the upper chamber 213 can be excited into the plasma 402; and the plasma generated by the first plasma generating device is also It is not necessarily limited to inductively coupled plasma, but may be other types of plasma, such as capacitively coupled plasma, microwave plasma, continuous plasma, pulsed plasma, and the like.
  • the second plasma generating apparatus includes a second RF power source 211, a second matching unit 210, and a supporting device 202 for exciting the reaction gas entering the lower chamber 214 into a plasma.
  • the second RF power source 211 is connected to the supporting device 202 via the second matching device 210 to provide the RF power to the supporting device 202.
  • the second matching device 210 ensures that the RF power provided by the second RF power source 211 can meet different requirements. Demand for use.
  • the second plasma generating device can be controlled to ensure that the energy of the ions 405 in the plasma is controlled to react only with the surface atoms to which the active neutral particles 403 are adsorbed, that is, the energy can only be interrupted by the carrier 201.
  • the surface atoms are bonded, but not enough to cause significant physical sputtering with atoms below the surface atomic layer. That is, the plasma in which the reaction gas in the lower chamber 214 is excited is a low-energy plasma. Similar to the first plasma generating device, the second plasma generating device can also be of any configuration.
  • step S11 the surface-removed slide 201 to be reacted is placed on the support device 202.
  • Step S12 the chemical adsorption phase: the reaction gas is introduced into the reaction chamber 10 through the inlet nozzle 204.
  • the etching reaction gas selected in the embodiment is Cl2, the flow rate is 5 sccm to 200 sccm, and the gas pressure in the reaction chamber 10 is controlled. From 0.5mT to 100mT. Since the first RF power is 100-1000 W and the second RF power loaded on the support device 202 is 0 W, the reactive gas can generate a high-density plasma in the upper chamber (ie, the high-density plasma generating chamber) 213.
  • the body 402 that is, Cl2 will be ionized and decomposed under the excitation of radio frequency energy, and the particles generated mainly include Cl ions, Cl atoms, and Cl2 molecules. And electrons, etc., at this time, the first separator 303a and the third separator 303c are grounded to capture most of the charged particles, and the second separator 303b is connected to the DC bias power source and the voltage is set at 5 to 100 V (preferably 10 to 50 V), which repels the charged particles such as Cl ions having higher energy, thereby confining them to the upper chamber 213, so that the generated low-energy active neutral particles 403 (excited Cl 2 molecules, excited Cl atoms) Under the action of the airflow, the separator assembly 203 enters the lower chamber 214 and is rapidly adsorbed on the surface of the carrier 201. Since it is an active particle, its adsorption rate is much larger than that of the conventional etching process. rate.
  • Step S13 purging the residual reaction gas phase: stopping the introduction of the reaction gas, and closing the first plasma generating device; allowing the purge gas to enter the reaction chamber 10 via the purge assembly 207 to be in the reaction chamber 10
  • the residual reaction gas is purged; and finally, the residual reaction gas and the purge gas in the reaction chamber 10 are discharged through the exhaust port 217 by means of the extraction device 212.
  • the purge gas may be an inert gas.
  • Step S14 desorption etching step: the reaction gas is introduced into the reaction chamber 10 via the inlet nozzle 204, and the second plasma generating device is activated to excite the reaction gas entering the lower chamber 214 into a plasma.
  • the surface of the slide 201 on which the active neutral particles are adsorbed is irradiated.
  • the reaction gas selected in the present embodiment is an inert gas He
  • the flow rate is 10 to 200 sccm
  • the gas pressure of the reaction chamber 10 is controlled at 200 mT to 4 Torr.
  • the reactive gas can generate low energy ( ⁇ 100 eV) in the lower chamber (ie, the low energy plasma generating chamber) 214.
  • the plasma 404 is irradiated to the surface of the slide 201.
  • the energy of the ions 405 in the plasma 404 can be controlled to react only with the surface atoms adsorbing the active neutral particles, and the atoms of the surface of the carrier 201 are broken, but insufficient. Significant physical sputtering occurs with atoms below the surface atomic layer.
  • Step S15 the purge gas is introduced into the reaction chamber 10 via the purge assembly 207, and finally the residual reaction gas and purge gas in the reaction chamber 10 are passed through the extraction device 212.
  • the exhaust port 217 is exhausted to evacuate the etch byproduct 406 in the reaction chamber 10.
  • step S11 to step S15 the carrier 201 is etched with a layer of surface atoms.
  • steps S12 to S15 are repeated to realize that the surface of the carrier 201 is etched by one layer of atoms and one layer of atoms until the etching depth reaches a preset value. That is to say, the etching method provided by the embodiment of the present invention can achieve the etching precision of the atomic level.
  • the so-called atomic level refers to the layer of atoms and one layer of atoms when etching the surface of the carrier 201. Layer etching.
  • the spacer assembly 203 by disposing the spacer assembly 203 and grounding or connecting a DC bias power source, separation of active neutral particles from charged particles in the plasma can be achieved, and the active neutrality is achieved.
  • the particles pass through the separator assembly 203 and are adsorbed on the surface of the slide 201 located in the lower chamber 214, thereby realizing the use of active particle chemisorption instead of the conventional reaction gas adsorption. Since the adsorbed particles in the embodiment of the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and because the active particles have strong adsorption capacity, the etching reaction gas can be greatly saved in the chemisorption stage.
  • the amount of use reduces the cost of the process.
  • the purge gas plasma ion desorption is used in the embodiment of the invention, the complexity of the device can be reduced compared to the device using the ion beam/neutrophil beam desorption, and the atomic layer with simple and reliable structure can be obtained.
  • the device 100 is etched to facilitate large scale production applications.
  • the present invention also provides an atomic layer etching method.
  • An atomic layer etching method according to an embodiment of the present invention is described in detail with reference to FIG. 4, which is implemented by the atomic layer etching apparatus provided by the foregoing embodiment of the present invention, and specifically includes the following steps:
  • reaction chamber setting the output power of the first RF power source to 100 W to 1000 W, that is, starting the first plasma generating device to excite the reaction gas entering the upper chamber into a high-density plasma And pass active neutral particles in the plasma
  • the baffle assembly enters the lower chamber from the upper chamber and is adsorbed on the surface of the slide, and the charged particles in the plasma are blocked by the baffle assembly and prevented from entering the lower chamber from the upper chamber. That is, the reaction chamber in this embodiment is partitioned into an upper chamber and a lower chamber by a separator assembly having a function of preventing charged particles in the upper chamber from entering the lower chamber but allowing the upper chamber to be activated. The role of neutral particles entering the lower chamber.
  • the spacer assembly may include three spacers, and the three spacers are spaced apart from each other in the up and down direction, the spacers disposed at the uppermost and lowermost portions are grounded, and the intermediate spacers and the DC bias are Press the power supply connection.
  • the output voltage of the DC bias power supply is 5 to 100 V, preferably 10 to 50 V.
  • the reaction gas enters the upper chamber through an intake nozzle disposed in the first intake port at the top of the upper chamber, and the reaction gas may be CF4, CHF3, CH2F2, CH3F, Cl2, HF, HCl. At least one of HBr, SF6, NF3, Br2, BCl3, SiCl4, O2, SiO2.
  • the reaction gas in the step S2 is Cl2, and the flow rate is 5 to 200 sccm.
  • the purge gas is introduced into the reaction chamber, and the reaction gas remaining in the reaction chamber is discharged through the exhaust port.
  • the purge gas can be introduced into the reaction chamber through the purging assembly, for example, the reaction gas is introduced into the reaction chamber through the second air inlet disposed at the side of the upper chamber, and finally the extraction device is utilized. The reaction residue was withdrawn.
  • reaction gas is introduced into the reaction chamber, and the output power of the second RF power source is set to 30 W to 100 W, that is, the second plasma generating device is activated, and the reaction gas entering the lower chamber is excited into a low-energy plasma.
  • the surface of the slide to which the active neutral particles are adsorbed is irradiated.
  • the reaction gas in this step S6 is an inert gas, and may be, for example, He, Ni, Ar, At least one of Kr, Xe.
  • the reaction gas may be He having a flow rate of 10 to 200 sccm.
  • the atomic layer etching method provided by the embodiment of the invention can realize the separation of the active neutral particles in the plasma and the charged particles, so that the active neutral particles can be adsorbed to the surface of the carrier sheet, thereby realizing the chemical adsorption of the active particles.
  • the adsorbed particles in the embodiment of the present invention are active particles, not only the etching rate can be significantly increased, but also the etching cycle time can be shortened; and because the active particles have strong adsorption capacity, the etching reaction gas can be greatly saved in the chemisorption stage. The amount of use reduces the cost of the process.
  • the complexity of the atomic layer etching apparatus used can be reduced not only in the manner of desorption of the ion beam/neutrophil beam, but also Conducive to mass production.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)

Abstract

L'invention concerne un dispositif de gravure de couche atomique et un procédé de gravure de couche atomique l'utilisant. Le dispositif de gravure de couche atomique comprend une cavité de réaction (1), un ensemble chicane (203), un premier dispositif de génération de plasma (205) et un second dispositif de génération de plasma (211), lequel ensemble chicane (203) divise une chambre de réaction en une chambre supérieure (213) et en une chambre inférieure (214), et lequel ensemble chicane (203) comprend une chicane pouvant être mise à la masse ou connectée à une alimentation de polarisation à courant continu, de manière à empêcher que des particules chargées dans la chambre supérieure ne pénètrent dans la chambre inférieure (214) et à permettre que des particules neutres actives pénètrent dans la chambre inférieure (214). Le premier dispositif de génération de plasma (205) est utilisé pour exciter le gaz entrant dans la chambre supérieure (213) pour obtenir du plasma. Le second dispositif de génération de plasma (211) est utilisé pour exciter le gaz entrant dans la chambre inférieure (214) pour obtenir du plasma. En remplaçant l'adsorption de gaz de réaction classique par l'adsorption chimique de particules d'adsorption actives, la vitesse de gravure peut être considérablement augmentée, le temps de cycle de gravure peut être réduit, la quantité de gaz de réaction de gravure utilisé peut être réduite, et les coûts de procédé peuvent être réduits.
PCT/CN2015/087512 2014-08-28 2015-08-19 Dispositif de gravure de couche atomique et procédé de gravure de couche atomique l'utilisant WO2016029817A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SG11201701159QA SG11201701159QA (en) 2014-08-28 2015-08-19 Atomic layer etching device and atomic layer etching method using same
JP2017511633A JP6454409B2 (ja) 2014-08-28 2015-08-19 原子層エッチング装置および同装置を用いる原子層のエッチング方法
KR1020177008420A KR101917304B1 (ko) 2014-08-28 2015-08-19 원자층 식각 장치 및 이를 이용한 원자층 식각 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410433208.2 2014-08-28
CN201410433208.2A CN105448635B (zh) 2014-08-28 2014-08-28 原子层刻蚀装置及采用其的原子层刻蚀方法

Publications (1)

Publication Number Publication Date
WO2016029817A1 true WO2016029817A1 (fr) 2016-03-03

Family

ID=55398749

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/087512 WO2016029817A1 (fr) 2014-08-28 2015-08-19 Dispositif de gravure de couche atomique et procédé de gravure de couche atomique l'utilisant

Country Status (6)

Country Link
JP (1) JP6454409B2 (fr)
KR (1) KR101917304B1 (fr)
CN (1) CN105448635B (fr)
SG (1) SG11201701159QA (fr)
TW (1) TWI620260B (fr)
WO (1) WO2016029817A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170124087A (ko) * 2016-04-29 2017-11-09 램 리써치 코포레이션 Ale 및 선택적인 증착을 사용하여 기판들 에칭
JP2018098094A (ja) * 2016-12-15 2018-06-21 東京エレクトロン株式会社 プラズマ処理装置
CN111883467A (zh) * 2020-08-06 2020-11-03 京东方科技集团股份有限公司 刻蚀槽
CN112103168A (zh) * 2020-10-14 2020-12-18 浙江赛威科光电科技有限公司 一种原位蒸镀的弱等离子刻蚀设备
CN112103168B (zh) * 2020-10-14 2024-06-07 浙江赛威科光电科技有限公司 一种原位蒸镀的弱等离子刻蚀设备

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6715129B2 (ja) * 2016-08-31 2020-07-01 東京エレクトロン株式会社 プラズマ処理装置
KR101848908B1 (ko) * 2016-09-19 2018-05-15 인베니아 주식회사 유도 결합 플라즈마 처리 장치
KR102292077B1 (ko) 2016-12-09 2021-08-23 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10529543B2 (en) * 2017-11-15 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Etch process with rotatable shower head
CN110391120B (zh) * 2018-04-17 2022-02-22 北京北方华创微电子装备有限公司 一种喷头和等离子体处理腔室
JP6811202B2 (ja) * 2018-04-17 2021-01-13 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
JP7133975B2 (ja) 2018-05-11 2022-09-09 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP2021019201A (ja) 2019-07-18 2021-02-15 エーエスエム アイピー ホールディング ビー．ブイ． 半導体処理システム用シャワーヘッドデバイス
CN110718440B (zh) * 2019-10-16 2022-06-14 北京北方华创微电子装备有限公司 原子层刻蚀设备及刻蚀方法
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
CN112522683B (zh) * 2020-12-01 2023-03-24 江苏集萃有机光电技术研究所有限公司 一种原子层沉积装置及oled封装方法
CN114400174B (zh) * 2022-01-18 2023-10-20 长鑫存储技术有限公司 一种等离子体处理装置及其处理晶片的方法
WO2023183129A1 (fr) * 2022-03-22 2023-09-28 Lam Research Corporation Gravure rapide de couche atomique
CN115172134B (zh) * 2022-09-06 2022-12-16 江苏鹏举半导体设备技术有限公司 原子层刻蚀装置及刻蚀方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7335602B2 (en) * 2006-01-18 2008-02-26 Freescale Semiconductor, Inc. Charge-free layer by layer etching of dielectrics
KR20110098693A (ko) * 2010-02-26 2011-09-01 성균관대학교산학협력단 저손상 공정을 위한 차세대 나노소자용 식각 장비
CN103748658A (zh) * 2011-07-20 2014-04-23 朗姆研究公司 使用从惰性气体形成的亚稳态体的原子层蚀刻

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
KR101080604B1 (ko) * 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
US9184028B2 (en) * 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
SG193943A1 (en) * 2011-04-11 2013-11-29 Lam Res Corp E-beam enhanced decoupled source for semiconductor processing
US9373517B2 (en) * 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7335602B2 (en) * 2006-01-18 2008-02-26 Freescale Semiconductor, Inc. Charge-free layer by layer etching of dielectrics
KR20110098693A (ko) * 2010-02-26 2011-09-01 성균관대학교산학협력단 저손상 공정을 위한 차세대 나노소자용 식각 장비
CN103748658A (zh) * 2011-07-20 2014-04-23 朗姆研究公司 使用从惰性气体形成的亚稳态体的原子层蚀刻

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170124087A (ko) * 2016-04-29 2017-11-09 램 리써치 코포레이션 Ale 및 선택적인 증착을 사용하여 기판들 에칭
KR102504770B1 (ko) * 2016-04-29 2023-02-27 램 리써치 코포레이션 Ale 및 선택적인 증착을 사용하여 기판들 에칭
JP2018098094A (ja) * 2016-12-15 2018-06-21 東京エレクトロン株式会社 プラズマ処理装置
US10825663B2 (en) 2016-12-15 2020-11-03 Tokyo Electron Limited Plasma processing apparatus
US11450515B2 (en) 2016-12-15 2022-09-20 Tokyo Electron Limited Plasma processing apparatus
CN111883467A (zh) * 2020-08-06 2020-11-03 京东方科技集团股份有限公司 刻蚀槽
CN111883467B (zh) * 2020-08-06 2024-03-12 京东方科技集团股份有限公司 刻蚀槽
CN112103168A (zh) * 2020-10-14 2020-12-18 浙江赛威科光电科技有限公司 一种原位蒸镀的弱等离子刻蚀设备
CN112103168B (zh) * 2020-10-14 2024-06-07 浙江赛威科光电科技有限公司 一种原位蒸镀的弱等离子刻蚀设备

Also Published As

Publication number Publication date
CN105448635A (zh) 2016-03-30
CN105448635B (zh) 2018-01-09
TW201608662A (zh) 2016-03-01
KR101917304B1 (ko) 2018-11-12
TWI620260B (zh) 2018-04-01
JP2017535057A (ja) 2017-11-24
JP6454409B2 (ja) 2019-01-16
SG11201701159QA (en) 2017-03-30
KR20170048468A (ko) 2017-05-08

Similar Documents

Publication Publication Date Title
WO2016029817A1 (fr) Dispositif de gravure de couche atomique et procédé de gravure de couche atomique l'utilisant
TWI760555B (zh) 蝕刻方法
JP6228694B2 (ja) 基板処理装置及び基板処理方法
CN108878285B (zh) 蚀刻方法
JP2016131238A5 (fr)
CN106067417B (zh) 蚀刻有机膜的方法
KR101835683B1 (ko) 다층막을 에칭하는 방법
JP2008270833A (ja) プラズマドーピング方法及び装置
CN113488368A (zh) 工件的加工
KR20230129345A (ko) 플라즈마 처리 장치 및 에칭 방법
CN105702572A (zh) 等离子体蚀刻方法
CN104603917B (zh) 等离子体处理方法和等离子体处理装置
JP2004353066A (ja) プラズマ源およびプラズマ処理装置
CN111463094A (zh) 原子层刻蚀设备和原子层刻蚀方法
CN109923648B (zh) 处理被处理体的方法
CN112771649B (zh) 用于使用氟自由基处理工件的方法
KR102638422B1 (ko) 유황 및/또는 탄소계 화학물을 사용하는 유기막의 주기적 플라즈마 에칭 방법
TWI824939B (zh) 蝕刻方法、電漿處理裝置及基板處理系統
CN115747765A (zh) 具有保护网格的等离子体增强原子层沉积的系统和方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15835029

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2017511633

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20177008420

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 15835029

Country of ref document: EP

Kind code of ref document: A1