JP2018098094A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP2018098094A JP2018098094A JP2016243451A JP2016243451A JP2018098094A JP 2018098094 A JP2018098094 A JP 2018098094A JP 2016243451 A JP2016243451 A JP 2016243451A JP 2016243451 A JP2016243451 A JP 2016243451A JP 2018098094 A JP2018098094 A JP 2018098094A
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- magnetic field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
まず、本実施形態にかかるプラズマ処理装置100の構成例について図面を参照しながら説明する。ここでは、平面状の高周波アンテナに高周波電力を印加して処理容器内に励起した処理ガスのプラズマによって、被処理体である半導体ウエハ(以下、単に「ウエハ」とも称する)Wに所定のプラズマ処理を施す誘導結合型プラズマ処理装置を例に挙げる。図1は、本実施形態にかかるプラズマ処理装置100の概略構成を示す断面図である。図2は、図1に示す高周波アンテナ140の構成例を示す平面図である。
102 処理容器
104 誘電体
104a 対向面
104b 面
110 載置台
120 ガス供給部
121 ガス導入口
122 ガス供給源
123 ガス供給配管
124 マスフローコントローラ
126 開閉バルブ
130 排気部
132 排気管
134 ウエハ搬出入口
136 ゲートバルブ
140 高周波アンテナ
142 アンテナ素子
144 挟持体
148 アクチュエータ
150 高周波電源
160 シールド部材
168 アクチュエータ
171 電磁石群
172 電磁石
200 制御部
210 操作部
220 記憶部
W ウエハ
Claims (7)
- 処理容器と、
前記処理容器内に設けられ、被処理体が載置される載置台と、
前記載置台に対向する対向面を有する誘電体と、
前記誘電体の前記対向面とは反対側の面に設けられ、前記誘電体を介してプラズマ励起用の誘導電界を前記処理容器内に導入する平面状のアンテナと、
前記処理容器の外周に沿って配置され、前記誘導電界に基づくプラズマ中のイオンを前記誘電体の前記対向面に沿って移動させる磁場を前記処理容器内に形成する電磁石群と
を有することを特徴とするプラズマ処理装置。 - 前記電磁石群は、前記磁場として、前記処理容器内の中央空間及び該中央空間を囲む外周空間を横断する磁場を形成することを特徴とする請求項1に記載のプラズマ処理装置。
- 前記電磁石群は、前記磁場として、前記処理容器内の中央空間及び該中央空間を囲む外周空間のうち、前記処理容器内の前記外周空間のみに存在する磁場を形成することを特徴とする請求項1に記載のプラズマ処理装置。
- 前記電磁石群の各電磁石の磁極を制御することにより、前記電磁石群によって形成される前記磁場を、前記処理容器内の中央空間及び該中央空間を囲む外周空間を横断する第1の磁場、又は、前記処理容器内の前記外周空間のみに存在する第2の磁場に切り替える制御部をさらに有することを特徴とする請求項1に記載のプラズマ処理装置。
- 前記制御部は、前記プラズマ処理装置によって実行されるプラズマ処理プロセスの切り替えのタイミングに応じて、前記電磁石群によって形成される前記磁場を前記第1の磁場又は前記第2の磁場に切り替えることを特徴とする請求項4に記載のプラズマ処理装置。
- 前記制御部は、さらに、前記電磁石群の各電磁石に流れる電流の大きさを制御することにより、前記電磁石群によって形成される前記磁場の磁場強度に勾配を生成することを特徴とする請求項4又は5に記載のプラズマ処理装置。
- 前記処理容器の中心軸を中心として前記電磁石群を回転自在に支持する支持部材をさらに有し、
前記制御部は、さらに、前記支持部材を制御して、前記電磁石群によって形成される前記磁場を前記処理容器の中心軸を中心として回転させることを特徴とする請求項4〜6のいずれか一つに記載のプラズマ処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016243451A JP6948788B2 (ja) | 2016-12-15 | 2016-12-15 | プラズマ処理装置 |
TW106142345A TWI757384B (zh) | 2016-12-15 | 2017-12-04 | 電漿處理裝置 |
US15/840,636 US10825663B2 (en) | 2016-12-15 | 2017-12-13 | Plasma processing apparatus |
KR1020170171244A KR102480180B1 (ko) | 2016-12-15 | 2017-12-13 | 플라즈마 처리 장치 |
US17/030,522 US11450515B2 (en) | 2016-12-15 | 2020-09-24 | Plasma processing apparatus |
KR1020220176332A KR102585507B1 (ko) | 2016-12-15 | 2022-12-15 | 플라즈마 처리 장치 |
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JP2016243451A JP6948788B2 (ja) | 2016-12-15 | 2016-12-15 | プラズマ処理装置 |
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JP2018098094A true JP2018098094A (ja) | 2018-06-21 |
JP6948788B2 JP6948788B2 (ja) | 2021-10-13 |
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US (2) | US10825663B2 (ja) |
JP (1) | JP6948788B2 (ja) |
KR (2) | KR102480180B1 (ja) |
TW (1) | TWI757384B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20220102119A1 (en) * | 2020-09-25 | 2022-03-31 | Tokyo Electron Limited | Plasma processing apparatus |
US11984302B2 (en) | 2020-11-03 | 2024-05-14 | Applied Materials, Inc. | Magnetic-material shield around plasma chambers near pedestal |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07106095A (ja) * | 1993-10-04 | 1995-04-21 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH0822979A (ja) * | 1994-07-07 | 1996-01-23 | Nec Corp | 基板処理方法および基板処理装置 |
JPH11340202A (ja) * | 1998-05-25 | 1999-12-10 | Mitsubishi Heavy Ind Ltd | プラズマ処理方法及びプラズマ処理装置 |
JP2001077095A (ja) * | 1999-09-08 | 2001-03-23 | Tokyo Electron Ltd | 処理装置及び処理方法 |
US20030010454A1 (en) * | 2000-03-27 | 2003-01-16 | Bailey Andrew D. | Method and apparatus for varying a magnetic field to control a volume of a plasma |
WO2016029817A1 (zh) * | 2014-08-28 | 2016-03-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 原子层刻蚀装置及采用其的原子层刻蚀方法 |
Family Cites Families (6)
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KR100863098B1 (ko) | 2000-09-01 | 2008-10-13 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 마그네트론 플라즈마용 자장 발생 장치, 이 자장 발생장치를 이용한 플라즈마 에칭 장치 및 방법 |
US20050211383A1 (en) * | 2002-08-21 | 2005-09-29 | Koji Miyata | Magnetron plasma-use magnetic field generation device |
EP1860680A1 (en) * | 2006-05-22 | 2007-11-28 | New Power Plasma Co., Ltd. | Inductively coupled plasma reactor |
KR101426225B1 (ko) * | 2007-05-17 | 2014-08-06 | 위순임 | 기판 처리 시스템 및 방법 |
JP5584412B2 (ja) * | 2008-12-26 | 2014-09-03 | 株式会社メイコー | プラズマ処理装置 |
JP6009171B2 (ja) * | 2012-02-14 | 2016-10-19 | 東京エレクトロン株式会社 | 基板処理装置 |
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2016
- 2016-12-15 JP JP2016243451A patent/JP6948788B2/ja active Active
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- 2017-12-04 TW TW106142345A patent/TWI757384B/zh active
- 2017-12-13 KR KR1020170171244A patent/KR102480180B1/ko active IP Right Grant
- 2017-12-13 US US15/840,636 patent/US10825663B2/en active Active
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2020
- 2020-09-24 US US17/030,522 patent/US11450515B2/en active Active
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- 2022-12-15 KR KR1020220176332A patent/KR102585507B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07106095A (ja) * | 1993-10-04 | 1995-04-21 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH0822979A (ja) * | 1994-07-07 | 1996-01-23 | Nec Corp | 基板処理方法および基板処理装置 |
JPH11340202A (ja) * | 1998-05-25 | 1999-12-10 | Mitsubishi Heavy Ind Ltd | プラズマ処理方法及びプラズマ処理装置 |
JP2001077095A (ja) * | 1999-09-08 | 2001-03-23 | Tokyo Electron Ltd | 処理装置及び処理方法 |
US20030010454A1 (en) * | 2000-03-27 | 2003-01-16 | Bailey Andrew D. | Method and apparatus for varying a magnetic field to control a volume of a plasma |
WO2016029817A1 (zh) * | 2014-08-28 | 2016-03-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 原子层刻蚀装置及采用其的原子层刻蚀方法 |
JP2017535057A (ja) * | 2014-08-28 | 2017-11-24 | 北京北方華創微電子装備有限公司Beijing Naura Microelectronics Equipment Co., Ltd. | 原子層エッチング装置および同装置を用いる原子層のエッチング方法 |
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Publication number | Publication date |
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KR20230006779A (ko) | 2023-01-11 |
KR102585507B1 (ko) | 2023-10-05 |
TW201831057A (zh) | 2018-08-16 |
KR20180069719A (ko) | 2018-06-25 |
US10825663B2 (en) | 2020-11-03 |
KR102480180B1 (ko) | 2022-12-21 |
US11450515B2 (en) | 2022-09-20 |
TWI757384B (zh) | 2022-03-11 |
JP6948788B2 (ja) | 2021-10-13 |
US20210013015A1 (en) | 2021-01-14 |
US20180174806A1 (en) | 2018-06-21 |
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