CN112103168A - Weak plasma etching equipment of normal position coating by vaporization - Google Patents
Weak plasma etching equipment of normal position coating by vaporization Download PDFInfo
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- CN112103168A CN112103168A CN202011094851.9A CN202011094851A CN112103168A CN 112103168 A CN112103168 A CN 112103168A CN 202011094851 A CN202011094851 A CN 202011094851A CN 112103168 A CN112103168 A CN 112103168A
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- etching
- cold trap
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- quartz glass
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 17
- 238000000576 coating method Methods 0.000 title claims description 15
- 239000011248 coating agent Substances 0.000 title claims description 14
- 238000009834 vaporization Methods 0.000 title claims description 3
- 230000008016 vaporization Effects 0.000 title claims description 3
- 238000005530 etching Methods 0.000 claims abstract description 93
- 230000007246 mechanism Effects 0.000 claims abstract description 68
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000001704 evaporation Methods 0.000 claims abstract description 29
- 230000008020 evaporation Effects 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 16
- 230000005855 radiation Effects 0.000 claims abstract description 15
- 238000011065 in-situ storage Methods 0.000 claims abstract description 14
- 238000004804 winding Methods 0.000 claims abstract description 11
- 239000000523 sample Substances 0.000 claims description 78
- 238000010438 heat treatment Methods 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000001237 Raman spectrum Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000013077 target material Substances 0.000 claims description 4
- 238000004457 water analysis Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims 1
- 238000005192 partition Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
A weak plasma etching device for in-situ evaporation comprises an etching cavity, a weak plasma radiation mechanism, a vacuum mechanism and a cold trap mechanism, the weak plasma emission mechanism comprises a guide rail, a radio frequency cover, a quartz glass tube and an air-bleeding electromagnetic valve component, wherein the two ends of the quartz glass tube are respectively provided with a bracket, the radio frequency cover comprises a radio frequency winding wound on the quartz glass tube and a support plate for supporting the radio frequency winding, the air-bleeding electromagnetic valve component is connected with one end of the quartz glass tube, the air-bleeding electromagnetic valve component is communicated with the quartz glass tube and the etching cavity and forms a radiation channel, and the air-bleeding electromagnetic valve component is used for introducing process gas into the quartz glass tube; the method has the advantage of controlling the etching speed to realize the thickness of the atomic layer.
Description
Technical Field
The invention relates to the technical field of etching equipment, in particular to weak plasma etching equipment for in-situ evaporation.
Background
The coating film is widely applied, generally common automobile coating films and optical lens coating films are adopted, etching needs to be wide, generally common semiconductor etching and lens etching are adopted, etching is also a coating film basis, coating films are required to be etched and then coated in some processes, the conventional coating films and etching are two operating devices which are separated and independent, coating films are difficult to perform after etching, the invention mainly aims at etching, etched materials mainly comprise SiO2, Si3N4, polycrystalline silicon, SiC, GaN, GaAs, ITO, AZO, photoresist, semiconductor materials, partial metals and the like, a Raman spectrum detection evaporation chamber is connected above an etching cavity, the etching cavity and the Raman spectrum detection evaporation chamber are detachable, the etching cavity and the Raman spectrum detection evaporation chamber are connected together and then are positioned on a frame, and the conventional inductively coupled plasma source has the characteristic of high plasma density, the etching speed is high, and the thickness of an atomic layer cannot be realized.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the weak plasma etching equipment which can control the etching speed to realize the in-situ evaporation of the atomic layer thickness.
The technical problem to be solved by the invention is realized by adopting the following technical scheme:
the weak plasma etching equipment for in-situ evaporation comprises an etching cavity, a weak plasma radiation mechanism, a vacuum mechanism, a cold trap mechanism, a sample holder and a driving mechanism, wherein the etching cavity is connected below a Raman spectrum detection evaporation chamber, a cavity door is arranged on the outer surface of the etching cavity, the weak plasma radiation mechanism, the vacuum mechanism and the cold trap mechanism are communicated with the etching cavity, the vacuum mechanism and the cold trap mechanism are used for vacuumizing the etching cavity, the sample holder is positioned in the etching cavity, a target material is loaded on the sample holder, the driving mechanism is positioned below the etching cavity, the driving mechanism drives the sample holder to move in the vertical direction so as to enable the sample holder to be close to or far away from the Raman spectrum detection evaporation chamber, and the weak plasma radiation mechanism comprises a guide rail, a radio frequency cover, a quartz glass tube and an air bleeding electromagnetic valve assembly, the guide rail sets up in the frame, quartz glass manages both ends and all is equipped with the support, quartz glass manages through two sets of support levels and is located the guide rail top, the radio frequency cover is established on quartz glass manages, radio frequency cover sliding connection is on the slide rail, including the winding radio frequency wire winding on quartz glass manages and support the wire-wound backup pad of radio frequency in the radio frequency cover, gassing solenoid valve subassembly is connected in quartz glass manages one end, gassing solenoid valve subassembly and quartz glass pipe and sculpture cavity all communicate with each other and constitute a radiation passageway, it is intraductal that the gassing solenoid valve subassembly is used for letting in process gas quartz glass, be equipped with first push-pull valve between quartz glass pipe and the sculpture cavity.
Preferably, the driving mechanism comprises a sample stage, a lifting assembly and a self-rotating assembly, the bottom of the etching cavity penetrates through the etching cavity, the sample stage is tightly pressed at the bottom of the etching cavity, the lifting assembly comprises a fixed plate, a screw rod, a movable plate and a first rotating motor, one end of the fixed plate is fixed on the sample stage, the other end of the fixed plate is fixedly connected with the first rotating motor, one end of the screw rod is fixed on a driving shaft of the first rotating motor, the other end of the screw rod is rotatably connected with the bottom of the sample stage, the movable plate is sleeved on the screw rod in a threaded manner, the self-rotating assembly comprises a support plate, an inner shaft, a shaft sleeve, a disc, a first rotating tooth and a second rotating motor, the support plate is fixedly connected with the movable plate, the second rotating motor is positioned at the bottom of the support plate, the sample holder comprises a shell and a heating assembly, the shell is connected with the heating assembly through a bearing, the heating assembly is fixedly connected to the disc, a second rotating tooth is sleeved on the bottom of the shell, the first rotating tooth is meshed with the second rotating tooth, the first rotating motor drives the screw to rotate so that the moving plate moves in the vertical direction, the supporting plate drives the shaft sleeve to move in the vertical direction so that the sample holder is close to or far away from the Raman spectrum detection evaporation chamber, the second rotating motor drives the inner shaft to rotate so that the first rotating tooth rotates, and the first rotating tooth drives the second rotating tooth to rotate so that the shell rotates.
Preferably, a sleeve is arranged on a shaft sleeve above the sample table, a third rotating tooth connected with the sleeve through a positioning pin is arranged on the sleeve, a sliding groove matched with the positioning pin is further formed in the shaft sleeve, the driving mechanism further comprises a revolution component, the revolution component comprises a third rotating motor and a fourth rotating tooth, the third rotating motor is fixed to the bottom of the sample table, a driving shaft of the third rotating motor penetrates through the sample table, the fourth rotating tooth is sleeved on the driving shaft of the third rotating motor, the fourth rotating tooth is meshed with the third rotating tooth, the third rotating motor drives the fourth rotating tooth to rotate so that the third rotating tooth rotates, and the third rotating tooth rotates to drive the disc to rotate so that the sample holder on the disc revolves around the inner shaft as the center.
Preferably, the vacuum mechanism comprises an exhaust pipe, a second gate valve and a vacuum pump, the exhaust pipe is connected to the etching cavity and communicated with the etching cavity, the second gate valve is located between the exhaust pipe and the vacuum pump, a communicated water analysis dew point probe is further arranged on one side of the exhaust pipe, an oxygen analyzer is further arranged on one side of the etching cavity, and the oxygen analyzer is communicated with the exhaust pipe and the etching cavity.
Preferably, the cold trap mechanism includes cold trap outer tube, cold trap inner tube, liquid nitrogen transfer line and heater strip, the cold trap inner tube is located the cold trap outer tube, cold trap inner tube both ends are sealed, the liquid nitrogen transfer line passes the cold trap outer tube and communicates with each other with the cold trap inner tube, the heater strip is around establishing on the internal surface of cold trap outer tube and on the surface of cold trap inner tube.
Preferably, the outer surface of the etching cavity is further provided with an ionization gauge connector, a capacitance film gauge and a plurality of groups of electrode flanges.
Preferably, heating element includes heating plate and heating head, the heating plate is connected on the heating head, the heating plate is located the shell, rotate through the bearing between heating head and the shell and be connected.
Preferably, the lifting assembly further comprises two groups of guide pillars, the two groups of guide pillars are respectively arranged on two sides of the screw, and the moving plate is sleeved on the two groups of guide pillars; the corrugated pipe is further sleeved outside the shaft sleeve between the support plate and the sample table.
Preferably, the sample table is further provided with a rotating tooth protection plate connected above the third rotating tooth and the fourth rotating tooth through bolts.
Preferably, the sample table is further provided with an inner cylinder, the inner cylinder is sleeved outside the third rotating tooth and the fourth rotating tooth, a partition plate is arranged between the inner cylinder and the etching cavity, and the partition plate is provided with a plurality of vent holes.
The invention has the advantages and positive effects that: the vacuum mechanism and the cold trap mechanism are used for vacuumizing the inside of the etching cavity, so that the etching process in the etching cavity can be carried out in a vacuum environment, process gas is introduced into the quartz glass tube through the deflation electromagnetic valve assembly, the process gas is ionized through the radio frequency winding, and the amount of the introduced process gas can be controlled through the deflation electromagnetic valve assembly to realize the etching rate so as to solve the problem that the thickness of an atomic layer cannot be reached at present; the internal lifting assembly enables the sample holder to move up and down to enable the target or the plated substrate on the sample holder to be close to or far away from the Raman spectrum detection evaporation chamber and the weak plasma radiation mechanism above, and the internal rotation assembly and the revolution assembly enable the sample holder to rotate finally to enable the etching or plating effect of the target or the plated substrate on the sample holder to be better and more uniform.
Drawings
FIG. 1 is an overall block diagram of the present invention;
FIG. 2 is an overall block diagram of the present invention;
FIG. 3 is a top view of the present invention;
FIG. 4 is a structural view of a sample stage and an inner cover in the present invention;
FIG. 5 is a view showing the structure of a sample stage according to the present invention;
FIG. 6 is a cross-sectional view of a sample stage according to the present invention;
FIG. 7 is a block diagram of the cold trap mechanism of the present invention;
FIG. 8 is a structural view of a weak plasma radiating mechanism according to the present invention.
In the figure: 1. etching the cavity; 2. a weak plasma emitting mechanism; 3. a hollow mechanism; 31. a vacuum pump; 32. a second gate valve; 33. an air exhaust pipe; 4. a cold trap mechanism; 41. a cold trap outer tube; 42. a cold trap inner tube; 43. a liquid nitrogen infusion tube; 44. heating wires; 5. a sample holder; 51. a housing; 52. heating the plate; 53. a heating head; 6. a drive mechanism; 61. a lifting assembly; 611. a fixing plate; 612. a screw; 613. moving the plate; 614. a first rotating electrical machine; 62. a rotation assembly; 621. a support plate; 622. a second rotating electrical machine; 623. an inner shaft; 624. a shaft sleeve; 6241. a chute; 625. a first rotating tooth; 626. a disc; 627. a third rotating tooth; 63. a revolution component; 631. a third rotating electrical machine; 632. a fourth rotating tooth; 7. a first gate valve; 8. a cavity door; 81. a door handle; 82. pressing the handle; 83. a hinge moving member; 89. a water analysis dew point probe; 10. an ionization gauge joint; 11. a capacitance film gauge; 12. an oxygen analyzer; 13. an electrode flange; 14. an inner barrel; 15. a partition plate; 151. a vent hole; 16. a guide post; 17. a photoelectric switch; 18. a bellows; 19. a rotating tooth guard plate; 20. a second rotating tooth; 21. a guide rail; 22. a quartz glass tube; 23. a bleed solenoid valve assembly; 24. a radio frequency shield; 241. radio frequency winding; 242. a support plate; 25. a support; 26. a conductive slip ring; 27. a sample stage; 28. and (4) coating.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When a component is referred to as being "connected" to another component, it can be directly connected to the other component or intervening components may also be present. When a component is referred to as being "disposed on" another component, it can be directly on the other component or intervening components may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The embodiments of the invention will be described in further detail below with reference to the accompanying drawings:
because the existing coating and etching are two separate operating devices, the coating is not easy to be carried out after the etching is finished, and the conventional inductively coupled plasma source has the characteristics that the plasma density is high, the etching speed is high and cannot be controlled, and finally the atomic layer thickness cannot be realized, the invention designs the weak plasma etching device which can control the etching speed to realize the in-situ evaporation of the atomic layer thickness, the specific structure of which is shown in figures 1-8, and comprises an etching cavity 1, a weak plasma radiation mechanism 2, a vacuum mechanism, a cold trap mechanism 4, a sample holder 5 and a driving mechanism 6, wherein the etching cavity 1 is connected below a Raman spectrum detection evaporation chamber, the etching cavity 1 is connected with the Raman spectrum detection evaporation chamber through bolts and sealed through a sealing ring, and the outer surface of the etching cavity 1 is provided with a cavity door 8 (the etching cavity 1 is cylindrical, the surface is connected with a tubular window, the cavity door 8 is hinged on the tubular window through a hinge moving part 83, the surface of the cavity door 8 is provided with a door handle 81 which is opened and closed, the other side of the cavity door 8 and the tubular window is provided with a pressing handle 82, the cavity door 8 and the tubular window are fastened together through the pressing handle 82, the opening of the cavity door 8 can replace a target material or a substrate on the sample holder 5, the weak plasma radiation mechanism 2, the vacuum mechanism and the cold trap mechanism 4 are communicated with the etching cavity 1, the vacuum mechanism and the cold trap mechanism 4 are used for vacuumizing the etching cavity 1, the sample holder 5 is positioned in the etching cavity 1, the sample holder 5 is loaded with the target material, the driving mechanism 6 is positioned below the etching cavity 1, the driving mechanism 6 drives the sample holder 5 to move in the vertical direction so that the sample holder 5 is close to or far away from a Raman spectrum detection evaporation chamber (it is described later that the etching cavity 1 is a, the upper port is connected below the raman spectroscopy detection evaporation chamber, the lower port is sealed by the sample table 27, that is, as shown in fig. 4, the driving mechanism 6 passes through the sample table 27, a sealed rubber ring is arranged on the sample table 27, an inner cylinder 14 is further arranged on the sample table 27, the inner cylinder 14 is sleeved outside a third rotating tooth 627 and a fourth rotating tooth 632, a partition plate 15 is arranged between the inner cylinder 14 and the etching chamber 1, a plurality of vent holes 151 are arranged on the partition plate 15, the weak plasma radiation mechanism 2 and the cold trap mechanism 4 are respectively arranged on two opposite sides of the etching chamber 1, the positions of the two mechanisms are higher than the position of the partition plate 15, the position of the vacuum mechanism on the etching chamber 1 is lower than the position of the partition plate 15, that is, the vacuum mechanism pumps air between the inner cylinder 14 and the etching chamber 1 below the partition plate 15, but the vent hole 151 is arranged on the partition plate 15, so that the air in the inner cylinder 14 can be pumped away, and the inner cylinder 14 can protect the third rotating tooth, secondly, avoiding a certain influence on the driving mechanism 6 during vacuum pumping, wherein the upper partition plate 15 and the vent hole 151 are arranged to prevent most of weak plasma and coating materials from entering between the inner cylinder 14 below the partition plate 15 and the etching cavity 1 at one time, the weak plasma emission mechanism 2 comprises a guide rail 21, a radio frequency cover 24, a quartz glass tube 22 and a deflation solenoid valve assembly 23, the guide rail 21 is arranged on a frame (the frame is not shown in the invention), two ends of the quartz glass tube 22 are respectively provided with a bracket 25, the quartz glass tube 22 is horizontally arranged above the guide rail 21 through two groups of brackets 25 (the bracket 25 at one side close to the etching cavity 1 is arranged on the frame, the bracket 25 at the other side is arranged on the guide rail 21, when the position of one end of the quartz glass tube 22 needs to be adjusted, the bracket 25 at the position can be slid), the radio frequency cover 24 is sleeved on the quartz glass tube 22, the radio frequency cover 24 is connected on the slide rail in a sliding way, the radio frequency cover 24 comprises a radio frequency winding 241 wound on the quartz glass tube 22 and a support plate 242 supporting the radio frequency winding 241, the gas release solenoid valve assembly 23 is connected at one end of the quartz glass tube 22, the gas release solenoid valve assembly 23 is communicated with the quartz glass tube 22 and the etching cavity 1 to form a radiation channel, the gas release solenoid valve assembly 23 is used for introducing process gas into the quartz glass tube 22, a first gate valve 7 is arranged between the quartz glass tube 22 and the etching cavity 1 (the gas release solenoid valve assembly 23 can control the flow of the process gas passing through, the process gas passing through the quartz glass tube 22 with the radio frequency winding 241 is ionized after being introduced into the process gas, the ionized positive ions are introduced into the etching cavity 1 to bombard the target above the sample holder 5 to emit atoms on the target, the process is an etching process), because the etching process needs to make the inside of the etching cavity 1 have a certain positive empty environment, the outer surface of the etching cavity 1 is also provided with an ionization gauge connector 10, a capacitance film gauge 11 and a plurality of groups of electrode flanges 13, and the ionization gauge and the capacitance film gauge 11 are used for detecting the internal pressure value and the vacuum degree of the etching cavity 1.
As shown in fig. 4-6, in order to enable the target or the substrate on the sample stage 27 to be etched or coated uniformly, the driving mechanism 6 includes the sample stage 27, a lifting assembly 61 and a rotation assembly 62, the bottom of the etching chamber 1 penetrates through the bottom of the etching chamber, the sample stage 27 is pressed against the bottom of the etching chamber 1 (where the sample stage 27 is pressed against the bottom of the etching chamber 1), the lifting assembly 61 includes a fixing plate 611, a screw 612, a moving plate 613 and a first rotating motor 614, one end of the fixing plate 611 is fixed on the sample stage 27, the other end of the fixing plate 611 is fixedly connected to the first rotating motor 614 (the fixing plate 611 is vertically arranged, a plurality of photoelectric switches 17 are arranged on the fixing plate 611), one end of the screw 612 is fixed on a driving shaft of the first rotating motor 614, the other end of the screw 612 is rotatably connected to the bottom of the sample stage 27, two groups of guide posts 16 are respectively arranged at two sides of the screw 612, the moving plate 613 is sleeved on the two groups of guide posts 16 (the guide posts 16 play a role of limiting and guiding to make the moving plate 613 more stable when moving up and down), the rotation assembly 62 comprises a support plate 621, an inner shaft 623, a shaft sleeve 624, a disc 626, a first rotating tooth 625 and a second rotating motor 622, the support plate 621 is fixedly connected with the moving plate 613, the second rotating motor 622 is positioned at the bottom of the support plate 621, the inner shaft 623 is connected with a driving shaft of the second rotating motor 622, one end of the inner shaft 623 sequentially passes through the sample table 27 and the disc 626, a corrugated pipe 18 is sleeved outside the shaft sleeve 624 between the support plate 621 and the sample table 27, the corrugated pipe 18 is used for preventing foreign matters from influencing the shaft sleeve 624, a conductive slip ring 26 sleeved on the shaft sleeve 624 is further arranged on the shaft sleeve 624, the conductive slip ring 26 is fixed on the sample, the photoelectric switch 17 is used for detecting the distance of up and down movement of the moving plate 613, and the conductive slip ring 26 is used for detecting the distance of up and down sliding of the bushing 624); the first rotating tooth 625 is sleeved on the inner shaft 623 above the disc 626, the shaft sleeve 624 is sleeved on the inner shaft 623 below the disc 626, one end of the shaft sleeve 624 is fixedly connected with the disc 626, the other end of the shaft sleeve 624 is connected on the support plate 621 through a bearing, the sample holder 5 comprises an outer shell 51 and a heating component, the outer shell 51 is connected with the heating component through a bearing, the heating component is fixedly connected on the disc 626, the bottom of the outer shell 51 is sleeved with a second rotating tooth 20, the first rotating tooth 625 is meshed with the second rotating tooth 20, the first rotating motor 614 drives the screw 612 to rotate so as to enable the moving plate 613 to move in the vertical direction, the support plate 621 horizontally and fixedly connected with the moving plate 613 also moves in the vertical direction, namely the support plate 621 drives the shaft sleeve 624 to move in the vertical direction so as to enable the shaft sleeve 624 and the inner shaft 623 to move upwards, the disc 626 also moves upwards, the second rotating electric machine 622 rotates the inner shaft 623 to rotate the first rotating teeth 625 (a bearing is provided between the inner shaft 623 and the disc 626), and the first rotating teeth 625 rotates the second rotating teeth 20 to rotate the housing 51 (after the first rotating teeth 625 rotate the second rotating teeth 20, the housing 51 rotates with the center point of the second rotating teeth 20 as the rotation point because the bearing is provided between the housing 51 and the heating head 53).
As shown in fig. 4-6, the sleeve 624 above the sample stage 27 is provided with the outer sleeve 28, the outer sleeve 28 is provided with a third rotating tooth 627 connected by a positioning pin, the sleeve 624 is further provided with a sliding slot 6241 matched with the positioning pin (since the outer sleeve 28 is fixed when the sample holder 5 is lifted up and down, the sleeve 624 moves up and down, the positioning pin slides up and down relative to the sleeve 624 and slides in the sliding slot 6241, and mainly plays a role of guiding and limiting), the driving mechanism 6 further includes a revolving assembly 63, the revolving assembly 63 includes a third rotating motor 631 and a fourth rotating tooth 632, the third rotating motor 631 is fixed at the bottom of the sample stage 27, the driving shaft of the third rotating motor 631 passes through the sample stage 27, the fourth rotating tooth 632 is sleeved on the driving shaft of the third rotating motor 631, the fourth rotating tooth 632 is engaged with the third rotating tooth 627, the third rotating motor 631 drives the fourth rotating tooth 632 to rotate so as to rotate the third rotating tooth 627, the third grabbing gear rotates to drive the outer sleeve 28 to rotate, and because the outer sleeve 28 is provided with the positioning pin, the shaft sleeve 624 is driven to rotate through the action of the positioning pin, namely, the disc 626 is driven to rotate so that the sample holder 5 on the disc 626 revolves around the inner shaft 623; as shown in fig. 5, the sample stage 27 is further provided with a rotating tooth guard 19 which is connected above the third rotating tooth 627 and the fourth rotating tooth 632 through bolts.
As shown in fig. 1, the vacuum mechanism includes an air exhaust tube 33, a second gate valve 32 and a vacuum pump 31, the air exhaust tube 33 is connected to the etching chamber 1 and communicated with the etching chamber, the second gate valve 32 is located between the air exhaust tube 33 and the vacuum pump 31, a water analysis dew point probe 89 is further provided on one side of the air exhaust tube 33, an oxygen analyzer 12 is further provided on one side of the etching chamber 1, the oxygen analyzer 12 is communicated with both the air exhaust tube 33 and the etching chamber 1, and since a characteristic environment is required in the etching and coating processes, the oxygen content and the water content need to be detected.
As shown in fig. 1 and 7, the cold trap mechanism 4 includes a cold trap outer tube 41, a cold trap inner tube 42, a liquid nitrogen transfer tube 43 and a heating wire 44, the cold trap inner tube 42 is located in the cold trap outer tube 41, two ends of the cold trap inner tube 42 are closed, the liquid nitrogen transfer tube 43 passes through the cold trap outer tube 41 and is communicated with the cold trap inner tube 42, and the heating wire 44 is wound on the inner surface of the cold trap outer tube 41 and the outer surface of the cold trap inner tube 42 (the working principle of the cold trap is the prior art, and therefore the principle of the cold trap is not described); as shown in fig. 6, since some materials are etched or coated to make the sample holder 5 have a certain temperature, the heating assembly includes a heating plate 52 and a heating head 53, the heating plate 52 is connected to the heating head 53, the heating plate 52 is located in the housing 51, and the heating head 53 is rotatably connected to the housing 51 through a bearing.
It should be emphasized that the embodiments described herein are illustrative rather than restrictive, and thus the present invention is not limited to the embodiments described in the detailed description, but other embodiments derived from the technical solutions of the present invention by those skilled in the art are also within the scope of the present invention.
Claims (10)
1. The utility model provides a weak plasma etching equipment of normal position coating by vaporization which characterized in that: the Raman spectrum detection evaporation chamber comprises an etching cavity (1), a weak plasma radiation mechanism (2), a vacuum mechanism, a cold trap mechanism (4), a sample support (5) and a driving mechanism (6), wherein the etching cavity (1) is connected below the Raman spectrum detection evaporation chamber, a cavity door (8) is arranged on the outer surface of the etching cavity (1), the weak plasma radiation mechanism (2), the vacuum mechanism and the cold trap mechanism (4) are communicated with the etching cavity (1), the vacuum mechanism and the cold trap mechanism (4) are used for vacuumizing the etching cavity (1), the sample support (5) is positioned in the etching cavity (1), a target material is loaded on the sample support (5), the driving mechanism (6) is positioned below the etching cavity (1), the driving mechanism (6) drives the sample support (5) to move in the vertical direction so that the sample support (5) is close to or far away from the Raman spectrum detection evaporation chamber, the weak plasma radiation mechanism (2) comprises a guide rail (21), a radio frequency cover (24), a quartz glass tube (22) and a gas discharge electromagnetic valve component (23), the guide rail (21) is arranged on a rack, two ends of the quartz glass tube (22) are respectively provided with a support (25), the quartz glass tube (22) is horizontally arranged above the guide rail (21) through two sets of supports (25), the radio frequency cover (24) is sleeved on the quartz glass tube (22), the radio frequency cover (24) is connected on a sliding rail in a sliding way, the radio frequency cover (24) is internally provided with a radio frequency winding (241) wound on the quartz glass tube (22) and a support plate (242) supporting the radio frequency winding (241), the gas discharge electromagnetic valve component (23) is connected at one end of the quartz glass tube (22), the gas discharge electromagnetic valve component (23) is communicated with the quartz glass tube (22) and an etching cavity (1) and forms a radiation channel, the gas-discharging electromagnetic valve component (23) is used for introducing process gas into the quartz glass tube (22), and a first gate valve (7) is arranged between the quartz glass tube (22) and the etching cavity (1).
2. The in-situ evaporation weak plasma etching equipment as claimed in claim 1, wherein: the driving mechanism (6) comprises a sample table (27), a lifting assembly (61) and a self-rotating assembly (62), the bottom of the etching cavity (1) penetrates through the etching cavity, the sample table (27) is tightly pressed at the bottom of the etching cavity (1), the lifting assembly (61) comprises a fixing plate (611), a screw rod (612), a moving plate (613) and a first rotating motor (614), one end of the fixing plate (611) is fixed on the sample table (27), the other end of the fixing plate (611) is fixedly connected with the first rotating motor (614), one end of the screw rod (612) is fixed on a driving shaft of the first rotating motor (614), the other end of the screw rod is rotatably connected to the bottom of the sample table (27), the moving plate (613) is sleeved on the screw rod (612) in a threaded manner, the self-rotating assembly (62) comprises a support plate (621), an inner shaft (623), a shaft sleeve (624), a disc (626), the support plate (621) is fixedly connected with the moving plate (613), the second rotating motor (622) is positioned at the bottom of the support plate (621), the inner shaft (623) is connected with a driving shaft of the second rotating motor (622), one end of the inner shaft (623) sequentially penetrates through the sample table (27) and the disc (626), the first rotating tooth (625) is sleeved on the inner shaft (623) above the disc (626), the shaft sleeve (624) is sleeved on the inner shaft (623) below the disc (626), one end of the shaft sleeve (624) is fixedly connected with the disc (626), the other end of the shaft sleeve (624) is connected with the support plate (621) through a bearing, the sample holder (5) comprises a shell (51) and a heating component, the shell (51) is connected with the heating component through a bearing, the heating component is fixedly connected on the disc (626), and the second rotating tooth (20) is sleeved on the bottom of the shell (51), the first rotating tooth (625) is meshed with the second rotating tooth (20), the first rotating motor (614) drives the screw (612) to rotate so as to enable the moving plate (613) to move in the vertical direction, the support plate (621) drives the shaft sleeve (624) to move in the vertical direction so as to enable the sample holder (5) to be close to or far away from the Raman spectrum detection evaporation chamber, the second rotating motor (622) drives the inner shaft (623) to rotate so as to enable the first rotating tooth (625) to rotate, and the first rotating tooth (625) rotates to drive the second rotating tooth (20) to rotate so as to enable the shell (51) to rotate.
3. The in-situ evaporation weak plasma etching equipment as claimed in claim 2, wherein: be equipped with overcoat (28) on axle sleeve (624) of sample platform (27) top, be equipped with on overcoat (28) and rotate tooth (627) through the third that the locating pin is connected, still be equipped with spout (6241) that matches with the locating pin on axle sleeve (624), actuating mechanism (6) still includes revolution subassembly (63), revolution subassembly (63) include third rotating electrical machines (631) and fourth rotation tooth (632), third rotating electrical machines (631) are fixed in sample platform (27) bottom, sample platform (27) is passed to the drive shaft of third rotating electrical machines (631), fourth rotation tooth (632) cover is established on the drive shaft of third rotating electrical machines (631), fourth rotation tooth (632) and third rotation tooth (627) mesh, third rotating electrical machines (631) drive fourth rotation tooth (632) rotates so that third rotation tooth (627) rotates, the third rotating tooth (627) rotates to drive the disc (626) to rotate so that the sample holder (5) on the disc (626) revolves around the inner shaft (623).
4. The in-situ evaporation weak plasma etching equipment as claimed in claim 1, wherein: the vacuum mechanism comprises an air exhaust pipe (33), a second gate valve (32) and a vacuum pump (31), the air exhaust pipe (33) is connected to the etching cavity (1) and communicated with the etching cavity, the second gate valve (32) is located between the air exhaust pipe (33) and the vacuum pump (31), a communicated water analysis dew point probe (89) is further arranged on one side of the air exhaust pipe (33), an oxygen analyzer (12) is further arranged on one side of the etching cavity (1), and the oxygen analyzer (12) is communicated with the air exhaust pipe (33) and the etching cavity (1).
5. The in-situ evaporation weak plasma etching equipment as claimed in claim 1, wherein: cold trap mechanism (4) are including cold trap outer tube (41), cold trap inner tube (42), liquid nitrogen transfer line (43) and heater strip (44), cold trap inner tube (42) are located cold trap outer tube (41), cold trap inner tube (42) both ends are sealed, liquid nitrogen transfer line (43) pass cold trap outer tube (41) and communicate with each other with cold trap inner tube (42), heater strip (44) are around establishing on the internal surface of cold trap outer tube (41) and on the surface of cold trap inner tube (42).
6. The in-situ evaporation weak plasma etching equipment as claimed in claim 1, wherein: the outer surface of the etching cavity (1) is also provided with an ionization gauge connector (10), a capacitance film gauge (11) and a plurality of groups of electrode flanges (13).
7. The in-situ evaporation weak plasma etching equipment as claimed in claim 2, wherein: heating element includes heating plate (52) and heating head (53), heating plate (52) are connected on heating head (53), heating plate (52) are located shell (51), rotate through the bearing between heating head (53) and shell (51) and be connected.
8. The in-situ evaporation weak plasma etching equipment as claimed in claim 2, wherein: the lifting assembly (61) further comprises two groups of guide pillars (16), the two groups of guide pillars (16) are respectively arranged on two sides of the screw rod (612), and the moving plate (613) is sleeved on the two groups of guide pillars (16); a corrugated pipe (18) is further sleeved outside the shaft sleeve (624) between the support plate (621) and the sample table (27).
9. The in-situ evaporation weak plasma etching equipment as claimed in claim 2, wherein: and a rotating tooth guard plate (19) connected above the third rotating tooth (627) and the fourth rotating tooth (632) through bolts is further arranged on the sample table (27).
10. The in-situ evaporation weak plasma etching equipment as claimed in claim 2, wherein: still be equipped with inner tube (14) on sample platform (27), inner tube (14) cover is established outside third rotation tooth (627) and fourth rotation tooth (632), be equipped with baffle (15) between inner tube (14) and etching cavity (1), be equipped with a plurality of air vents (151) on baffle (15).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011094851.9A CN112103168B (en) | 2020-10-14 | Weak plasma etching equipment for in-situ evaporation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011094851.9A CN112103168B (en) | 2020-10-14 | Weak plasma etching equipment for in-situ evaporation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112103168A true CN112103168A (en) | 2020-12-18 |
| CN112103168B CN112103168B (en) | 2024-06-07 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101118854A (en) * | 2006-08-02 | 2008-02-06 | 美商慧程系统科技股份有限公司 | Plasma etching system |
| WO2016029817A1 (en) * | 2014-08-28 | 2016-03-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer etching device and atomic layer etching method using same |
| CN110931399A (en) * | 2019-12-23 | 2020-03-27 | 武汉大学 | RIE semiconductor material etching device with multiple detection functions |
| CN212874428U (en) * | 2020-10-14 | 2021-04-02 | 浙江赛威科光电科技有限公司 | Weak plasma etching equipment of normal position coating by vaporization |
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101118854A (en) * | 2006-08-02 | 2008-02-06 | 美商慧程系统科技股份有限公司 | Plasma etching system |
| WO2016029817A1 (en) * | 2014-08-28 | 2016-03-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer etching device and atomic layer etching method using same |
| CN110931399A (en) * | 2019-12-23 | 2020-03-27 | 武汉大学 | RIE semiconductor material etching device with multiple detection functions |
| CN212874428U (en) * | 2020-10-14 | 2021-04-02 | 浙江赛威科光电科技有限公司 | Weak plasma etching equipment of normal position coating by vaporization |
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