JP6271659B2 - Electron beam enhanced separate plasma source for semiconductor processing. - Google Patents

Description

  Plasma sources used for thin film processing in semiconductor device manufacturing often cannot achieve the most desirable conditions for dry etching because the ion concentration and radical concentration in the plasma cannot be individually controlled. For example, in some applications, desirable conditions for plasma etching may be achieved by maintaining the radical concentration in the plasma at a constant level while simultaneously increasing the ion concentration in the plasma. However, independent control of this type of ion concentration versus radical concentration cannot be achieved using a common plasma source commonly used for thin film processing. It is in this context that the present invention has been recalled.

  In one embodiment, a semiconductor substrate processing system is disclosed. The system includes a processing chamber and a substrate support defined to support a substrate within the processing chamber. The system also includes a plasma chamber defined separately from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission paths that fluidly connect the plasma chamber to the processing chamber. The plurality of fluid transmission paths are defined to supply reactive components of the plasma from the plasma chamber to the processing chamber. The system further includes an electron beam source defined to generate an electron beam and transmit the electron beam through the processing chamber and across the substrate support.

  In one embodiment, a method for processing a semiconductor substrate is disclosed. The method includes an operation for placing a substrate on a substrate support so as to be exposed to a processing region. The method also includes an operation for generating a plasma in a plasma generation region that is separate from the processing region. The method also includes an operation for supplying a reactive component of the plasma from the plasma generation region to the processing region. The method further allows electrons to be incident above the substrate into the processing region, such that the incident electrons alter the ion density within the processing region to affect the processing of the substrate. Including operation.

  In one embodiment, a semiconductor substrate processing system is disclosed. The system includes a processing chamber and a substrate support defined to support a substrate within the processing chamber. The system also includes a plasma chamber defined separately from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission paths that fluidly connect the plasma chamber to the processing chamber. The plurality of fluid transmission paths are defined to supply reactive components of the plasma from the plasma chamber to the processing chamber. The system further includes an electrode disposed in the processing chamber separate from the substrate support. A power supply unit is electrically connected to the electrode. The power supply is defined to supply power to the electrode to liberate electrons from the electrode into the processing chamber.

  In one embodiment, a method for processing a semiconductor substrate in accordance with one embodiment of the present invention is disclosed. The method includes an operation for placing a substrate on a substrate support so as to be exposed to a processing region. The method also includes an operation for generating a plasma in a plasma generation region that is separate from the processing region. The method also includes an operation for supplying a reactive component of the plasma from the plasma generation region to the processing region. The method further includes an operation for supplying power to one or more electrodes disposed in the processing region separately from the substrate support. The power supplied to the one or more electrodes causes electrons to enter the processing region from one or more electrodes, and changes the ion density in the processing region to affect the processing of the substrate.

  In one embodiment, a semiconductor substrate processing system is disclosed. The system includes a processing chamber and a substrate support defined to support a substrate within the processing chamber. The system also includes a plasma chamber defined separately from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission paths that fluidly connect the plasma chamber to the processing chamber. The plurality of fluid transmission paths are defined to supply reactive components of the plasma from the plasma chamber to the processing chamber. The system further includes a plurality of power transfer components defined to transfer power to the plurality of fluid transmission paths to generate auxiliary plasma in the plurality of fluid transmission paths. The plurality of fluid transmission paths are defined to supply auxiliary plasma reactive components to the processing chamber.

  In one embodiment, a method for processing a semiconductor substrate is disclosed. The method includes an operation for placing a substrate on a substrate support so as to be exposed to a processing region. The method also includes an operation for generating a plasma in a plasma generation region that is separate from the processing region. The method also operates to supply a reactive component of the plasma from the plasma generation region into the processing region through a plurality of fluid transmission paths, so that the reactive component of the plasma affects the processing of the substrate. Including. The method further includes an operation for generating an auxiliary plasma in the plurality of fluid transmission paths. The method also includes an operation for providing auxiliary plasma reactive components from a plurality of fluid transmission paths into the processing region, such that the auxiliary plasma reactive components affect the processing of the substrate. .

  Other aspects and advantages of the invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the present invention.

1 shows a schematic diagram of a semiconductor substrate processing system using a plasma chamber defined separately from a substrate processing chamber, according to one embodiment of the present invention.

FIG. 6 is a plot of ion density in the ion source region required to obtain 1.0E11 cc ⁻¹ ion density in a substrate processing chamber as a function of tube diameter, according to one embodiment of the present invention; The tube represents the transport means between the ion source region and the substrate processing chamber.

1 shows a longitudinal section of a plasma driven substrate processing system according to an embodiment of the present invention.

3B shows a horizontal cross-sectional view AA referred to in FIG. 3A.

3D illustrates one aspect of the horizontal cross-sectional view of FIG. 3B with the spacing between the fluid transmission paths narrowed across the entire top plate, in accordance with one embodiment of the present invention.

3D illustrates one aspect of the horizontal cross-sectional view of FIG. 3B with the spacing between the fluid transmission paths extended across the entire top plate, in accordance with one embodiment of the present invention.

FIG. 3B illustrates one aspect of the horizontal cross-sectional view of FIG. 3B with non-uniform spacing between the fluid transmission paths across the entire top plate, according to one embodiment of the present invention.

In accordance with one embodiment of the present invention, an electron beam source is adapted to transmit a plurality of spatially separated electron beams as they traverse a substrate processing region and traverse over a substrate support in a common direction. FIG. 3 shows the upper surface of the substrate support in one system configuration defined as follows.

In accordance with an embodiment of the present invention, a plurality of spatially separated electron beams are transmitted so that they traverse through the substrate processing region and traverse over the substrate support in respective directions. FIG. 6 shows the top surface of the substrate support in one system configuration with a fixed electron beam source.

4 illustrates a rasterization time sequence for the operation of the multiple electron beam sources of FIG. 3G, in accordance with one embodiment of the present invention.

1 illustrates an example of an electron beam source defined as a hollow cathode device, according to one embodiment of the present invention.

FIG. 4 shows a front view of a conductive grid according to an embodiment of the present invention.

1 illustrates one aspect of a plasma driven substrate processing system incorporating a DC bias surface electron beam source according to an embodiment of the present invention.

FIG. 4 shows an enlarged view of an electrode according to an embodiment of the present invention.

1 illustrates one aspect of a plasma driven substrate processing system incorporating a planar DC bias surface electron beam source according to an embodiment of the present invention.

FIG. 4 shows an enlarged view of a planar electrode according to an embodiment of the present invention.

1 illustrates one aspect of a plasma driven substrate processing system using a fluid transmission path as an auxiliary ion generation region, in accordance with one embodiment of the present invention.

2 shows a flowchart of a method for processing a semiconductor substrate according to an embodiment of the present invention.

2 shows a flowchart of a method for processing a semiconductor substrate according to an embodiment of the present invention.

2 shows a flowchart of a method for processing a semiconductor substrate according to an embodiment of the present invention.

  In the following description, numerous details are set forth to provide a thorough understanding of the present invention. However, it will be apparent to one skilled in the art that the present invention may be practiced without the identification of some or all of these details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.

  Plasma sources used for thin film semiconductor processing often cannot achieve the most desirable conditions for dry etching because the ion concentration and radical concentration in the plasma cannot be individually adjusted. In many applications, desirable conditions for plasma etching may be achieved by maintaining the radical concentration at a substantially constant level while simultaneously increasing the ion concentration. However, it is difficult, if possible, to achieve this type of adjustment through a conventional plasma source used in thin film processing.

  The concept of individually controlling ion concentration and radical concentration in a semiconductor processing plasma is referred to herein as providing a separate ion / radical plasma source. One concept for providing a separate ion / radical plasma source is to allow radicals and ions to be incident from separate plasma sources. In various embodiments, these separate plasma sources are spatially separated or temporally separated, i.e., generate ions primarily by time or generate radicals primarily. Can be either defined differently. Examples of segregated ion / radical plasma sources that use spatial separation, temporal separation, or a combination thereof are “Semiconductor Processing System Having Multiple Decoupled Plasma Sources”. As described in co-pending US patent application Ser. No. 13 / 104,923.

  A plasma driven substrate processing system that relies on plasma radical species to provide some processing of a semiconductor substrate is an environmental requirement between the plasma chamber and the substrate processing chamber, i.e., pressure, temperature, gas composition, gas flow rate, power. Plasma may be generated in a plasma chamber that is separated from the substrate processing chamber due to differences in supply and the like. FIG. 1 shows a schematic diagram of a semiconductor substrate processing system 100 that uses a plasma chamber 101 defined separately from the substrate processing chamber 103, in accordance with one embodiment of the present invention. In the system 100, the plasma generation chamber 101 is fluidly connected to the substrate processing chamber 103 by a plurality of fluid transmission paths 105. In this manner, the reactive species of the plasma generated in the plasma generation chamber 101 moves through the fluid transmission path 105 and reaches the substrate processing chamber 103 as indicated by an arrow 107. In one embodiment, a portion of the fluid transmission path 105 is defined to include an activatable region that is defined to provide auxiliary electron generation to increase ion extraction from the plasma generation chamber 355. Upon entering the substrate processing chamber 103, plasma reactive species interact with the substrate 109 to process the substrate 109 in a predetermined manner.

  In one embodiment, the term “substrate” as used herein refers to a semiconductor wafer. However, in other embodiments, the term “substrate” as used herein can refer to a substrate formed of sapphire, GaN, GaAs, SiC, or other substrate material, such as a glass panel / substrate. , Metal foil, metal sheet, polymer material, and the like. In various embodiments, the “substrate” as used herein may vary in form, shape, and / or size. For example, in some embodiments, “substrate” as used herein may correspond to a 200 mm (millimeter) semiconductor wafer, a 300 mm semiconductor wafer, or a 450 mm semiconductor wafer. Also, in some embodiments, “substrate” as used herein may correspond to a non-circular substrate, such as a rectangular substrate for a flat panel display, among other shapes. “Substrate” as used herein is described as substrate 109 in the figures illustrating examples of various embodiments.

  In most plasma processing applications, it is desirable to use both plasma ionic and radical species to process the substrate 109. Since the radical species are electrically neutral, they can move from the plasma generation chamber 101 to the substrate processing chamber 103 through the fluid transmission path 105 in accordance with the flow of the process gas. However, since the ionic species are electrically charged and can be electrically neutralized when contacting the material surface, they are transferred from the plasma generation chamber 101 to the substrate processing chamber 103 through the fluid transmission path 105. It would be difficult to transfer ions efficiently in a controlled manner.

  It will be appreciated that the incidence of ions from a remote ion source into the substrate processing region may be problematic. As described above, if the ion source is spatially separated from the substrate processing region, the ions must be transported between the ion source and the substrate processing region through the transport means. The transportation means can be variously determined for each embodiment. For example, in one embodiment, the ion source occurs in a chamber that is physically separated from the substrate processing chamber, and the transport means is defined by a tube arrangement. In another embodiment, the chamber for generating the ion source is separated from the substrate processing chamber by the plate assembly, and the transport means is defined by a plurality of through holes opened in the plate assembly. It will be understood that the above examples of means of transport have been given by way of example only. In other embodiments, the transport means may be otherwise defined as long as it provides one or more fluid transmission paths between the ion / radical source, ie, the region where the plasma is generated, and the substrate processing region. it can.

  Under best conditions, the ion flux that can be achieved in the secondary substrate processing chamber is the product of the ion density in the ion source region and the baud rate. Baume velocity represents the velocity of ions at the edge of the surface sheath in the ion source region. The surface sheath represents the area in front of the material surface that is in contact with the ion source plasma and in the presence of an electric field. The total number of ions that can be supplied to the substrate processing chamber per unit time is then the ion flux in the ion source region, that is, in the plasma generation chamber, the transport means (fluid transmission between the ion source region and the substrate processing chamber). Route)) multiplied by the total flow path area.

ここで、ｎ_upper＝イオン源領域内におけるイオン数密度であり、Δｎ＝基板処理チャンバ内における、イオン源領域からのイオン数密度の追加分であり、Ｖ_{bohm_upper}＝イオン源領域内におけるイオンのボーム速度であり、Ａ_open＝イオン源領域と基板処理チャンバとの間の輸送手段の総面積であり、Ａ_{loss_lower}＝基板処理チャンバの壁の総面積であり、Ｖ_{bohm_lower}＝基板処理チャンバ内におけるイオンのボーム速度である。 The following balance equation exists that the excess ion flux to the wall in the plasma generation chamber due to ions incident from the ion source region is equal to the ion flux incident from the ion source region through the transport means.

Here, n _upper = ion number density in the ion source region, Δn = addition number of ion number density from the ion source region in the substrate processing chamber, and V _{bohm_upper} = the ion _{bomb in the} ion source region A _open = total area of transport between the ion source region and the substrate processing chamber, A _{loss_lower} = total area of the walls of the substrate processing chamber, and V _{bohm_lower} = ion of ions in the substrate processing chamber Baume speed.

ここで、ｖ_bohm＝イオンのボーム速度であり、Ｔ_e＝イオンの温度（ｅＶ）であり、ｍ_i＝イオンの質量（ａｍｕ）である。 The bomb speed is given by Equation 2.

Here, v is the Bohm velocity of _Bohm = ion, a T _e = ion temperature (eV), the mass of m _i = ion (amu).

According to Equation 1, maximization of the ion density in the substrate processing chamber is: 1) increase the ion number density in the ion source region, ie increase n _upper , 2) increase the electron temperature in the ion source. Can be achieved by one or more of: increasing V _{bohm_upper} , and 3) minimizing ion loss in the transport means between the ion source and the substrate processing chamber.

  The total flow area of the transport means between the ion source and the substrate processing chamber can be very small. For example, a small tube diameter or a small number of small diameter holes may be required to maintain an appropriate pressure differential between the higher pressure ion source region and the lower pressure substrate processing chamber. . Thus, to achieve a sufficient amount of electron generation, a high gas density, i.e. high gas pressure, will be required in the ion source region, so that the transport means between the ion source region and the substrate processing chamber. It would not be appropriate to simply increase the flow area of the.

It can also be difficult to increase the ion number density and electron temperature in the ion source region to the extent necessary to compensate for the small channel area of the transport means between the ion source region and the substrate processing chamber. There is sex. FIG. 2 plots the ion density in the ion source region required to obtain 1.0E11 cc ⁻¹ ion density in the substrate processing chamber as a function of tube hole diameter in accordance with one embodiment of the present invention. And the tube represents the transport means between the ion source region and the substrate processing chamber. As shown in FIG. 2, if an ion density of 1.0E11 cc ^-1 is required above the substrate in the substrate processing chamber, ions of the order of 1.0E12 cc ^-1 are present in the ion source region. I need density. Achieving ion density levels on the order of 1.0E11 cc ^-1 in a substrate processing chamber by means of tube transport less than 2 mm (millimeters) in diameter would be very specific and many would only be possible in unrealistic situations .

  A further problem with controlling the ion and radical fluxes separately within the substrate processing chamber is that the ion flux is generated in the presence of a low electron temperature, especially when the substrate processing chamber is operated at a low pressure. is there. For example, it may be difficult to generate ion flux in processes that require minimizing “damage” to the substrate by maintaining the temperature of the electrons exposed to the substrate at a very low temperature. Such a process includes an atomic layer etching (ALE) process which is an atomic layer deposition process for forming an epitaxial layer on a substrate. For example, consider an ALE process in which a thin film is deposited at a low electron temperature, followed by a process step for removal of a monomolecular material layer that requires a higher electron temperature. In this example, it will be difficult to adjust the ion flux to achieve a monolayer removal process because of the premise that the electron temperature of the preceding ALE process step is low.

  Having the ability to control the electron energy distribution function (EEDF) within the substrate processing chamber is itself a means of individually (separating) controlling the ion density relative to the radical density within the substrate processing chamber. Will be understood. More specifically, by having the ability to control the EEDF to avoid the low energy dissociation process and to “select” the group of electrons that prefer the high energy ionization process, ie, the dissociative ionization process, the ions in the substrate processing chamber The bundle can be increased relative to the radical bundle, or the ion flux can be increased relative to the non-beneficial radical bundle in the substrate processing chamber.

  In this document, several plasma-driven substrate processing system embodiments for providing a suitable and large ion flux in a plasma source, comprising: Embodiments that are effectively utilized for control are disclosed. Embodiments of the plasma driven substrate processing system disclosed herein are also such large in applications such as ALE that would require large ion fluxes with non-hazardous ion energy and electron energy. It makes it possible to realize an ion flux.

  Electron beam injection into the substrate processing chamber serves to lower the “bulk” electron temperature and plasma potential through the addition of charge. Therefore, the EEDF in the substrate processing chamber can be changed through electron beam injection. More specifically, the injection of an electron beam into the substrate processing region has the effect of slowing down a low energy electron collision process such as a dissociative electron collision process. For electron energies above about 100 eV (electron volts), an electronic interaction process that includes the generation of charged particles has a significantly larger cross-sectional area than an electronic interaction process that does not involve the generation of charged particles. Thus, a group of high energy electrons or beam incident electrons can sustain a plasma discharge through a high energy electron interaction process. Embodiments of the plasma driven substrate processing system disclosed herein provide for separation of ion and radical flux control in order to maximize the available ion flux in the substrate and within the substrate processing chamber. In order to achieve this, various types of ion injection techniques are adopted.

  FIG. 3A illustrates a longitudinal cross section of a plasma driven substrate processing system 300 according to one embodiment of the present invention. The system 300 includes a chamber 301 formed by a top structure 301B, a bottom structure 301C, and a sidewall 301A extending between the top structure 301B and the bottom structure 301C. The chamber 301 surrounds the substrate processing region 302, in which the substrate 109 is held firmly on the substrate support 303 and exposed to the reactive component 325 of the plasma 359. The substrate processing region 302 is separated from the plasma generation chamber 355 by the top plate 315. During operation, the reactive component 325 of the plasma 359 moves through the plurality of fluid transmission paths 316 in the top plate 315 and reaches the substrate processing region 302 as indicated by arrows 361.

  In various embodiments, the chamber sidewall 301A, top structure 301B, and bottom structure 301C can structurally withstand the pressure differential and temperature that the chamber 301 material would be exposed to during plasma processing, and the plasma. It can be formed from a variety of materials, such as stainless steel or aluminum, as long as it is chemically compatible with the processing environment. In one embodiment, chamber sidewall 301A, top structure 301B, and bottom structure 301C are formed of an electrically conductive material and are electrically connected to electrical ground 357.

  In the embodiment of FIG. 3A, the plasma generation chamber 355 is formed above the top plate 315. The plasma generation chamber 355 is in fluid communication with the process gas source 319 and each fluid transmission path 316 through the top plate 315. System 300 also includes a coil assembly 351 arranged to convert process gas in plasma generation chamber 355 to plasma 359. In the system 300, the chamber top plate 301B includes a window 353 suitable for transmission of RF (radio frequency) power from the coil assembly 351 into the plasma generation chamber 355. In one embodiment, window 355 is formed of quartz. In another embodiment, the window 353 is formed of a ceramic material such as silicon carbide.

  In one embodiment, RF power is supplied to the coil assembly 351 from one or more RF power sources 391A-391n. Each RF power source 391A-391n is connected through a corresponding matching network 393 to ensure efficient RF power transmission to the coil assembly 351. If there are multiple RF power sources 391A-391n, it will be understood that each of the multiple RF power sources 391A-391n can be independently controlled with respect to RF power frequency and / or amplitude. In one embodiment, the one or more RF power sources 391A-391n are defined to provide RF power having a frequency of any of 2 MHz, 27 MHz, 60 MHz, 400 kHz, or combinations thereof.

  It will be appreciated that the inductive power transfer system of FIG. 3A is shown by way of example. In other embodiments, the plasma generation chamber 355 can be defined to generate the plasma 359 in a different manner. For example, in one embodiment, the plasma generation chamber 355 can be defined as a capacitively coupled chamber. Here, the plasma 359 generation region of chamber 355 is exposed to a pair of spaced apart electrodes electrically connected to one or more power supplies, and thus power (direct current (DC), RF, or These combinations) are transmitted between the pair of electrodes and through the chamber 355 to convert the process gas supplied from the process gas source 319 into a plasma 359. In yet another embodiment, the plasma generation chamber 355 can be defined as a microwave driven chamber.

  Regardless of the particular power transfer embodiment for generating plasma 359, during operation of system 300, process gas supplied by process gas source 319 is converted to plasma 359 within plasma generation chamber 355. Will be understood. As a result, the reaction component 325 of the plasma 359 moves from the plasma generation chamber 355 through the plurality of fluid transmission paths 316 of the top plate 315 and above the substrate support 303 in the substrate processing region 302, and is disposed on the substrate support 303. It reaches the substrate 109 that has been formed.

  In one embodiment, upon entering the substrate processing region 302 from the fluid transmission path 316 of the top plate 315, process gas flows through the peripheral vent 327, as indicated by arrow 381, and is exhausted by the exhaust pump 331. Exhaust through 329. In one embodiment, a flow restrictor 333 is provided to control the flow of process gas from the substrate processing region 302. Also, in one embodiment, the flow restrictor 333 is defined as a ring structure that is movable toward and away from the peripheral vent 327 as indicated by arrow 335.

  In one embodiment, the plasma generation chamber 355 is defined to operate at an internal pressure up to about 1 Torr (T). Also, in one embodiment, the substrate processing region 302 is operated within a pressure range ranging from about 1 millitorr (mT) to about 100 mT. For example, in one embodiment, the system 300 has a process gas extrusion flow rate of about 1000 scc / second (standard cubic centimeter per second) and a residence time of the reactive component 325 in the substrate processing region 302 of about 10 milliseconds (ms). In a state, the substrate processing region 302 is operated to provide a pressure of about 10 mT. It will be understood and appreciated that the example operating conditions described above represent one of the principle unlimited operating conditions that can be implemented in the system 300. The above example operating conditions do not represent or imply any restrictions on possible system 300 operating conditions.

  The substrate support 303 is disposed so as to support the substrate 109 so as to be exposed to the substrate processing region 302. The substrate support 303 is defined to hold the substrate 109 thereon while the plasma processing operation is being performed on the substrate 109. In the example embodiment of FIG. 3A, the substrate support 303 is held by a cantilever arm 305 attached to the wall 301 A of the chamber 301. However, in other embodiments, the substrate support 303 can be attached to the bottom plate 301C of the chamber 301 or to another member disposed within the chamber 301. In various embodiments, the substrate support 303 may be stainless, for example, as long as it can structurally withstand pressure differentials and temperatures that will be exposed during plasma processing and is chemically compatible with the plasma processing environment. It can be formed of various materials such as steel, aluminum, or ceramic.

  In one embodiment, the substrate support 303 includes a bias electrode 307 for generating an electric field for attracting ions to the substrate support 303 and to the substrate 109 held on the substrate support 303. More specifically, the electrode 307 in the substrate support 303 is determined so as to apply a bias voltage to the entire substrate processing region 302 between the substrate support 303 and the top plate 315. The bias voltage generated by the electrode 307 serves to pull ions formed in the plasma generation chamber 355 into the substrate processing region 302 and toward the substrate 109 through the fluid transmission path 316.

  In one embodiment, the substrate support 303 includes a plurality of cooling channels 309 through which cooling fluid can flow during plasma processing operations to maintain temperature control of the substrate 109. Also, in one embodiment, the substrate support 303 can include a plurality of lift pins 311 that are defined to raise and lower the substrate 109 relative to the substrate support 303. In one embodiment, a door assembly 313 is disposed within the chamber wall 301A to allow insertion and removal of the substrate 109 into / out of the chamber 301. Also, in one embodiment, the substrate support 303 is defined as an electrostatic chuck that is equipped to generate an electrostatic field to securely hold the substrate 109 on the substrate support 303 during a plasma processing operation.

  The top plate 315 is disposed above the substrate support 303 and away from the substrate support 303 so as to be positioned away from the substrate 109 above the substrate 109 positioned on the substrate support 303. The substrate processing region 302 exists between the top plate 315 and the substrate support 303 so as to exist on the substrate 109 positioned on the substrate support 303.

  In one embodiment, the substrate support 303 is adjustable such that the process gap distance between the top plate 315 and the substrate support 303 when measured perpendicular to the substrate processing region 302 ranges from about 1 cm to about 10 cm. As is, it is movable in the vertical direction as indicated by arrow 383. In one embodiment, the substrate support 303 is adjusted to provide a process gap distance of about 5 cm. Also, in one embodiment, the vertical position of the substrate support 303 relative to the top plate 315 and vice versa, either during the performance of the plasma processing operation or between the plasma processing operation and vice versa. The vertical position of the top plate relative to the support 303 is adjustable.

  Adjustment of the process gap distance provides adjustment of the dynamic range of ion flux emanating from the fluid transmission path 316. Specifically, the ion flux reaching the substrate 109 can be reduced by increasing the process gap distance, and vice versa, by decreasing the process gap distance. In one embodiment, when the process gap distance is adjusted to achieve ion flux adjustment in the substrate 109, the process gas flow through the plasma generation chamber 355 can be adjusted accordingly, and thus A certain degree of independence is given to the control of the radical flux in the substrate 109. Also, process gaps combined with ion and radical bundles emanating from the fluid transmission path 316 and entering the substrate processing region 302 to substantially uniform ion density and radical density at and across the substrate 109. You will see that the distance is controlled.

  It will be appreciated that the configuration of the fluid transmission path 316 through the top plate 315 can affect how the reactive components 325 of the plasma 359 are distributed within the substrate processing region 302. In one embodiment, the fluid transmission path 316 is formed in the top plate 315 with a substantially uniform distribution relative to the underlying substrate support 303. FIG. 3B shows a horizontal cross-sectional view AA referenced in FIG. 3A, in accordance with one embodiment of the present invention. As shown in FIG. 3B, the fluid transmission path 316 is formed in the top plate 315 in a substantially uniform distribution relative to the underlying substrate support 303.

  It will be appreciated that the spacing between the paths of the fluid transmission paths 316 across the plate 315 may vary from embodiment to embodiment. FIG. 3C illustrates one aspect of the horizontal cross-sectional view of FIG. 3B with the spacing between the fluid transmission paths 316 narrowed across the entire top plate 315, according to one embodiment of the present invention. FIG. 3D illustrates one aspect of the horizontal cross-sectional view of FIG. 3B with the spacing between the paths of the fluid transmission paths 316 widened throughout the top plate 315, according to one embodiment of the present invention. FIG. 3E illustrates one aspect of the horizontal cross-sectional view of FIG. 3B with non-uniform spacing between the fluid transmission paths 316 across the top plate 315, according to one embodiment of the present invention.

  In one example embodiment, the total number of fluid transmission paths 316 through the top plate 315 is in the range of about 50 to about 200. In one example embodiment, the total number of fluid transmission paths 316 through the top plate 315 is about 100. However, it will be understood that the example embodiments referred to above for the number and configuration of fluid transmission paths 316 through the top plate 315 are provided as examples to facilitate the description of the present invention. In other embodiments, essentially any number and configuration of the reaction components 325 or radicals and / or ions suitable for achieving the desired plasma processing results on the substrate 109 is provided as needed. A fluid transmission path 316 can be formed and disposed within the top plate 315.

  The plasma driven substrate processing system 300 of FIG. 3A further generates an electron beam 367 and transmits the electron beam 367 through the substrate processing region 302 and across the substrate support 303. At least one electron beam source 363 defined in Each electron beam source 363 is electrically connected to receive power from the power supply unit 389 so that power can be supplied to each electron beam source 363 in an independent control manner. Depending on the type of electron beam source 363, the power supply unit 389 can be determined to transmit DC power, RW power, or a combination thereof to the electron beam source 363.

  In one embodiment, each electron beam source 363 is defined to transmit an electron beam 367 along a trajectory that is substantially parallel to the surface of the substrate support 303 that is defined to support the substrate 109. Each electron beam source 363 can also be defined to generate and transmit one or more electron beams 367. In operation, the electron beam source 363 is operated to pass the electron beam 367 into the substrate processing region 302 while an ion generating gas such as argon flows through the substrate processing region 302. In one embodiment, the ion generating gas is a component of the process gas mixture supplied from the process gas source 319 and flows into the substrate processing region 302 through the fluid transmission path 316 in the top plate 315.

  Incidence of the electron beam 367 into the substrate processing region 302 by the electron beam source 363 or the like increases generation of charged particles, that is, generation of ions in the substrate processing region 302 in the vicinity of the electron beam 367. The incidence of the electron beam 367 into the substrate processing region 302 is optimized so that significantly more ions are formed through electron impact ionization events than radicals formed through electron impact dissociation of the process gas. In one embodiment, a method for establishing this tendency to favor ionization over dissociation includes optimization of the position of the electron beam 367 source, optimization of the number of electrons incident into the processing region 302, and / or electron beam. One or more of 367 energy optimizations may be included. Thus, the incidence of electron beam 367 entering and through substrate processing region 302 controls the increase in ion density spatially and temporally without substantially affecting the radical density, and thus It will be appreciated that ion density control within the substrate processing region 302 is effectively separated from radical density control.

  The embodiment of FIG. 3A also includes a plurality of conductive grids 365 positioned outside the periphery of the substrate support 303 and above the substrate support 303. The conductive grid 365 is electrically connected to the power supply unit 387 so that a controlled voltage level is applied to each conductive grid 365 in an independent control manner. Depending on the particular embodiment, the power supply 387 can be defined to transmit DC power, RW power, or a combination thereof to the conductive grid 365.

  In one embodiment, the conductive grid 365 is positioned at the electron beam outlet of each electron beam source 363 to cover the outlet. In this embodiment, the power to the conductive grid 365 may be controlled to enhance or at least not prevent transmission of the electron beam 367 from the electron beam source 363 that is covered by the conductive grid 365. it can. The predetermined conductive grid 365 positioned on the side away from the active electron beam source 363 with the substrate support 303 interposed therebetween has the predetermined conductive grid 365 transmitted by the active electron beam source 363. A positive charge can be applied to act as an electrical sink for

  As described above, the system 300 can include one or more electron beam sources 363. FIG. 3F illustrates a plurality of spatially separated electron beams 367 according to an embodiment of the invention such that they traverse through the substrate processing region 302 and above the substrate support 303 in a common direction. The top surface of the substrate support 303 is shown in one system 300 configuration in which the electron beam source 363 is defined for transmission. The electron beam source 363 can be defined and operated to transmit the electron beam 367 in either a continuous or pulsed manner. The electron beam source 363 also provides electron beams 367 in a spatially divided manner so that they are transmitted in a single common direction over a portion of the substrate support 303 at a predetermined time. The beam 367 can be defined and operated to transmit. In this case, the electron beam source 363 transmits the spatially divided electron beam 367 as a whole in a substantially uniform form, which is time-averaged, and the substrate support 303 (and the substrate 109 disposed thereon). ) Can be defined and operated to transmit their electron beams 367 in a time multiplexed manner. In this way, the electron beam 367 generally can provide a substantially uniform ion generation effect across the substrate support 303 and the substrate 109 disposed thereon.

  In the embodiment of FIG. 3F, a first conductive grid 365A is arranged so as to cover the electron beam outlet of the electron beam source 363. This first conductive grid 365A can be energized to facilitate / enhance transmission of the electron beam 367 from the electron beam source 363. In this embodiment, the second conductive grid 365 </ b> B is disposed at a position opposite to the electron beam source 363 with the substrate support 303 interposed therebetween. The second conductive grid 365B is electrically connected to the power supply 387 to receive a positive charge. In this way, the second conductive grid 365B functions as an electrical sink for the electron beam 367 transmitted from the electron beam source 363 through the substrate processing region 302 in a single common direction.

  FIG. 3G illustrates a plurality of spatially separated electron beams 367 that traverse the substrate processing region 302 and above the substrate support 303 in respective directions according to one embodiment of the present invention. The top surface of the substrate support 303 is shown in one system 300 configuration in which a plurality of electron beam sources 363 are defined to transmit in this manner. Each electron beam source 363 can be defined and operated to transmit the electron beam 367 in either a continuous or pulsed manner. The electron beam source 363 also defines and operates to transmit the electron beams 367 in a spatially rasterized manner so that they are transmitted from a selected number of electron beam sources 363 at a predetermined time. be able to. In this case, one or more electron beam sources 363 can be operated at a predetermined time. Also, in this embodiment, the electron beam source 363 has a spatially rasterized electron beam 367 generally transmitted in a substantially uniform manner that is time-averaged and disposed on the substrate support 303 (and thereon). Can be defined and operated to transmit their electron beams 367 in a temporally multiplexed manner across the entire substrate 109). In one embodiment, each electron beam source 363 is defined and operated such that its electron beam 367 is transmitted over the central location of the substrate support 303.

  Also, in the embodiment of FIG. 3G, each conductive grid 365 is electrically connected to the power supply 387 so that each can be charged in an independent control manner (either positive or negative). In one embodiment, a conductive grid 365 arranged to cover the electron beam exit of the active electron beam source 363 is charged to enhance the transmission of the electron beam 367 or not to prevent the transmission of the electron beam 367. The Then, another conductive grid 365 positioned on the opposite side of the active electron beam source 363 across the substrate support 303 is an electron beam that is transmitted from the active electron beam source 363 through the substrate processing region 302. A positive charge is provided to act as an electrical sink for 367.

  FIG. 3H shows a rasterization time sequence for the operation of the plurality of electron beam sources 363 of FIG. 3G according to one embodiment of the present invention. As shown in FIG. 3H, the electron beam source 363 is defined to sequentially transmit a plurality of spatially separated electron beams 367. For example, at some time (time 1), the first electron beam source 363 is operated to transmit the electron beam 367 across the substrate support 303. At the next time (time 2), the second electron beam source 363 adjacent to the first electron beam source is operated to transmit the electron beam 367 and traverse the substrate support 303. The remaining plurality of electron beam sources 363 are operated sequentially and sequentially so as to transmit the electron beam 367 and traverse the substrate support 303. Eventually, the last electron beam source 363 is operated to transmit the electron beam 367 across the substrate support 303 at the last time (time 16). The rasterization time sequence of the electron beam source 363 operation can then be repeated as necessary. In other embodiments, the electron beam source 363 may be used in any order, such as non-sequential, in order to achieve a desired effect on the ion density in the substrate processing region 302, and basically Can be active for any period of time.

  It will be appreciated that the number of electron beam sources 363 shown in FIGS. 3G and 3H is provided as an example. In one embodiment, 36 individual electron beam sources 363 are provided around the substrate support 303, and these 36 electron beam sources 363 transmit electron beams transmitted by adjacent electron beam sources 363, respectively. The substrate supports 303 are spaced apart from each other so as to traverse the substrate support 303 with an angle difference (θ) of about 10 degrees relative to the center of the substrate support 303. In other embodiments, a different number of electron beam sources 363 can be deployed at substantially equal intervals around the substrate support. Regardless of the specific number of electron beam sources deployed around the substrate support 303, the electron beam source 363 is generally time averaged by the spatially rasterized electron beam 367 that each transmits. To transmit the electron beams 367 in a time multiplexed manner so as to traverse the entire substrate support 303 (and the substrate 109 disposed thereon) in a substantially uniform manner. It will be understood that it can be deployed and operated. In this way, the electron beam 367 generally can provide a substantially uniform ion generation effect across the substrate support 303 and the substrate 109 disposed thereon.

  In various embodiments, the electron beam source 363 can be defined as a different type of electron beam source. For example, in some embodiments, the electron beam source 363 includes a hollow cathode device, an electron cyclotron resonance device, a laser driving device, a microwave driving device, an inductively coupled plasma generating device, and a capacitively coupled plasma generating device. 1 or more. It will be appreciated that an electron beam source 363 of the type referred to above is provided as an example. In other embodiments, the required electron beam 367 passing through the substrate processing region 302 is generated and transmitted to produce a desired effect on the ion density in the substrate processing region 302 and correspondingly on the substrate 109. Essentially any type of electron beam source 363 can be used in the system 300 as long as it is defined to achieve the plasma processing effects of FIG.

  FIG. 4A shows an example of an electron beam source 363 defined as a hollow cathode device 401 according to one embodiment of the present invention. The hollow cathode device 401 is positioned outside the periphery of the substrate support 303 and above the substrate support 303. The hollow cathode device 401 has an exit region 407 that is oriented to face the substrate processing region 302 above the substrate support 303. The hollow cathode device 401 can be placed in the system 300 so that it is electrically and RF isolated from the surrounding chamber material. In one embodiment, the hollow cathode device 401 includes a pair of electrodes 403A, 403B disposed on both sides of the internal cavity of the hollow cathode device 401. One or both of the electrodes 403A, 403B are electrically connected to receive power from the electron beam power source 389. The electron beam power source 389 can be defined to include a DC power supply 389A, an RF power supply 389B, or a combination thereof. RF power supply 389B is connected to electrode 403A and / or electrode 403B through matching network 389C to match impedance and minimize reflection of transmitted RF power from electrode 403A and / or electrode 403B. The

  In one embodiment, the electrodes 403A and 403B are arranged such that one electrode 403A sandwiches the inside of the hollow cathode device 401 on the side opposite to the electron beam 367 exit of the hollow cathode device 401, and the other electrode 403B is hollow. The cathode device 401 is positioned so as to be arranged next to the electron beam 367 exit. However, it will be appreciated that in other embodiments, the electrodes 403A, 403B may be disposed elsewhere and / or oriented within the internal cavity of the hollow cathode device 401. In other embodiments, the hollow cathode device 401 transmits power to the process gas inside the hollow cathode device 401, and transmits power other than the electrodes 403A and 403B as long as the process gas can be converted into the plasma 405. Can be defined to incorporate components. For example, in one embodiment, the walls of the hollow cathode device 401 are electrically conductive and serve as a power transfer component. In another example embodiment, the power transfer component is incorporated as a coil disposed proximate to the hollow cathode device 401.

  The hollow cathode device 401 is also connected to an electron beam gas supply unit 388 so that a process gas for generating an electron beam can be flowed into the hollow cathode device 401 from the hollow cathode device 401 in a controlled manner. Upon entering the interior of the hollow cathode device 401, the process gas is converted to a plasma 405 by power emitted from the electrodes 403A, 403B, or other types of power transfer components. In one embodiment, RF power having a frequency of either 2 MHz, 27 MHz, 60 MHz, 400 kHz, or a combination thereof is converted into electrodes 403A, 403B, or other types of power to convert process gas to plasma 405. Is transmitted to the transmission component.

  Also, in one embodiment, the hollow cathode device 401 is defined to incorporate an activated electron beam 367 exit region 407 to enhance electron extraction from the internal cavity of the hollow cathode device 401. In one embodiment, the activatable exit region 407 itself is defined as another hollow cathode. In one version of this embodiment, the exit region 407 is surrounded by electrodes that can be energized by either DC power, RF power, or a combination thereof. As reactive components from the plasma 405 flow through the activatable exit region 407, the power emitted from the electrodes liberates fast electrons in the exit region 407, which is transmitted from the hollow cathode device 401. The electron beam 367 is strengthened.

  In one embodiment, a conductive grid 365 is arranged to cover the electron beam 367 exit region 407 of the hollow cathode device 401. More specifically, the conductive grid 365 is used to facilitate the extraction of electrons from the plasma 405 in the internal cavity of the hollow cathode device 401, and the substrate above the exit region 407 of the hollow cathode device 401 and the substrate support 303. It is arranged between the processing area 302. FIG. 4B shows a front view of conductive grid 365 according to one embodiment of the present invention. In one embodiment, conductive grid 365 is electrically connected to receive power from conductive grid power supply 387. The power source 387 can be defined to include a DC power supply 387A, an RW power supply 387B, or a combination thereof. RF power supply 387B is connected to conductive grid 365 through matching network 387C to match impedance and minimize reflection of transmitted RF power from conductive grid 365.

  Also, in one embodiment, conductive grid 365 is connected to heater 409 to provide independent temperature control of conductive grid 365, which is used to maintain the clean state of conductive grid 365. be able to. In one embodiment, the conductive grid 365 operates as an extraction grid for extracting electron flux from the plasma 405 within the internal cavity of the hollow cathode device 401. Also, in one embodiment, the conductive grid 365 can be operated in a pulsed fashion such that the polarity of the charge on the conductive grid 365 alternates between positive and negative between pulses. In this embodiment, conductive grid 365 extracts electron flux from plasma 405 when supplied with a positive charge pulse and extracts ions from plasma 405 when supplied with a negative charge. To work. Thus, in this embodiment, conductive grid 365 can pulse in a manner that alternates between ion extraction mode and electron extraction mode. This pulsing of the conductive grid also provides an average null current and access to an ion driven ionization process within the substrate processing region 302. In addition, another conductive grid 365 disposed on the opposite side of the exit area 407 of the hollow cathode device 401 across the substrate support 303 provides an electrical sink for the electron beam 367 transmitted by the hollow cathode device 401. To provide, it can be operated to have a positive charge.

  FIG. 5A illustrates one aspect of a plasma driven substrate processing system 300 incorporating a DC bias surface electron beam source 503 according to one embodiment of the present invention. The system 300 of FIG. 5A includes a DC bias electron beam source 503 in place of the electron beam source 363 and the conductive grid 365. For ease of explanation, DC bias electron beam source 503 is referred to below as electrode 503. The electrode 503 is disposed in the electrically insulating member 501 so that the surface of the electrode 503 is exposed to the substrate processing region 302. The electrode 503 is separated from the substrate support 303 and disposed in the processing chamber 301. In one embodiment, the electrode 503 is defined as a conductive band disposed outside the periphery of the substrate support 303 within the substrate processing region 302 of the processing chamber 301 and above the substrate support 303. In one embodiment, the electrode 503 is defined as a band or strap that surrounds the substrate support 303 around the substrate processing region 302.

  In the system 300A, the electrode 503 is electrically connected to the power supply unit 505. In one embodiment, the power supply 505 applies power to the electrode 503 to attract ions in the substrate processing region 302 toward the electrode 503 and release electrons from the electrode 503 into the substrate processing region 302. Determined. In various embodiments, the power supplied from the power supply 505 to the electrode 503 can be DC power, RF power, or a combination of DC power and RF power. In one embodiment, a negative voltage is applied to the electrode 503 by the power supply unit 505. However, in other embodiments, the voltage applied to the electrode 503 by the power supply 505 can be either negative or positive. For example, in one embodiment, the power supply 505 is defined to supply a positive voltage to the electrode 503, thus attracting electrons and repelling positively charged ions. In one embodiment, the power supply unit 505 is determined to supply power to the electrode 503 in a pulse manner and / or a polarity alternation manner.

FIG. 5B shows an enlarged view of electrode 503 in accordance with one embodiment of the present invention. In one embodiment, the electrode 503 is a DC bias that generates an electron flux (J _e− ) or electron beam emanating from the surface of the electrode 503 in a direction toward the substrate processing region 302 from the incident ion flux (J _ion ). Provides a surface. In one embodiment, the ions in the ion flux (J _ion ) incident on the electrode 503 are inert and passive, such as Si ions. In this embodiment, the DC bias surface of electrode 503 can be used to compensate for passive species generated through radical interactions. In one embodiment, electrode 503 can be energized by either DC power, RF power, or a combination thereof. In one embodiment, the electrode 503 is supplied with low frequency RF power.

  In one embodiment, the electrode 503 is sized to produce a hollow cathode effect in the substrate processing region 302. More specifically, if the DC bias surface of electrode 503 surrounds substrate processing region 302 such that electrons emitted from electrode 503 reach the opposite portion of electrode 503 with sufficient energy. If defined as a sufficiently large band or strap, a hollow cathode configuration will be formed within the substrate processing region 302 itself, thus further enhancing ionization within the substrate processing region 302.

  FIG. 6A illustrates one aspect of a plasma driven substrate processing system 300 incorporating a planar DC bias surface electron beam source 601 in accordance with one embodiment of the present invention. Compared to the system 300 of FIG. 3A, the system 300B of FIG. 6A includes a planar DC biased electron beam source 601 instead of the electron beam source 363 and the conductive grid 365. For ease of explanation, the DC bias electron beam source 601 is referred to below as a planar electrode 601. In one embodiment, the planar electrode 601 is defined as a planar conductive segment 601 disposed above the substrate support 303 in the substrate processing region 302. In one embodiment, the planar electrode 601 is incorporated into the system 300B in combination with the electrode 503 described above in connection with FIGS.

  For example, in one embodiment, the planar electrode 601 is defined on the bottom surface of the top plate 315 in a direction facing the substrate support 303 so as to face the substrate processing region 302. In one embodiment, the planar electrode 601 is electrically insulated from the top plate 315 by the insulating member 603. In this embodiment, the planar electrode 601 and the insulating member 603 are both present in the top plate 315 so as not to disturb the flow of reaction components entering the substrate processing region 302 from the plasma generation chamber 355. It will be understood that it includes a plurality of through-holes formed in alignment with a plurality of fluid transmission paths 316.

  In the system 300 </ b> B, the planar electrode 601 is electrically connected to the power supply unit 605. In one embodiment, the power supply 605 attracts ions in the substrate processing region 302 toward the planar electrode 601 and causes the planar electrode 601 to negatively attract electrons from the planar electrode 601 into the substrate processing region 302. It is determined to apply a voltage. In one embodiment, the power supply unit 605 is configured to supply power to the planar electrode 601 in a pulse manner. Further, in one embodiment, the power supply unit 605 is defined to supply a positive voltage to the planar electrode 601, thus attracting electrons and repelling positively charged ions.

FIG. 6B shows an enlarged view of the planar electrode 601 according to one embodiment of the present invention. In one embodiment, the planar electrode 601 generates an electron flux (J _e− ) or electron beam that exits from the surface of the planar electrode 601 in a direction toward the substrate processing region 302 from an incident ion flux (J _ion ). A DC bias surface is provided. In one embodiment, ions in the ion flux (J _ion ) incident on the planar electrode 601 are inert and passive, such as Si ions. In this embodiment, the DC bias surface of the planar electrode 601 can be used to compensate for passive species generated through radical interactions. In one embodiment, the planar electrode 601 can be energized by either DC power, RF power, or a combination thereof. In one embodiment, the planar electrode 601 is supplied with low frequency RF power.

  As described above, the total flow path area of the fluid transmission path 316 between the plasma generation chamber 355 and the substrate processing region 302 can be extremely small. For example, the fluid transmission path 316 may have a small tube diameter or a small number of small diameter holes to maintain an appropriate pressure difference between the high pressure plasma generation chamber 355 and the low pressure substrate processing region 302. Can be included. Therefore, in order to achieve the generation of a sufficient amount of electrons, a large gas density, i.e., a high gas pressure, will be required in the plasma generation chamber 355, so that it enters the substrate processing region 302 from the plasma generation chamber 355. It would not be appropriate to simply increase the flow area of the fluid transmission path 316 to increase the ion flux.

  In order to overcome the geometric limitations of ion transfer efficiency associated with the fluid transmission path 316, one embodiment of the present invention uses the fluid transmission path 316 as an auxiliary ion generation region or plasma booster. FIG. 7 illustrates one aspect of a plasma driven substrate processing system 300 that uses a fluid transmission path 316 as an auxiliary ion generation region in accordance with one embodiment of the present invention. In the embodiment of FIG. 7, the top plate 315 in the system 300 of FIG. 3A is replaced with an activatable top plate 701. Similar to the top plate 315, the activatable top plate 701 includes a plurality of fluid transmission paths 316 formed in the activatable top plate 701 from the plasma generation chamber 355 to the substrate processing region 302. However, the activatable top plate 701 includes a plurality of power transfer components 702 disposed proximate to each of the plurality of fluid transmission paths 316. The power transfer component 702 is defined to transfer power to the fluid transmission path 316 to generate an auxiliary plasma 704 within the fluid transmission path 316. The fluid transmission path 316 is defined to supply both plasma 359 and auxiliary plasma 704 reaction components to the substrate processing region 302.

  System 100C also includes a power source 703 that is defined to provide DC power, RW power, or a combination thereof to power transfer component 702. The power transfer component 702 then serves to transmit power through the fluid transmission path 316 to convert the process gas in the fluid transmission path 316 to the auxiliary plasma 704. In one embodiment, the system 300C can also include a process gas source 709 that is in fluid communication with each of the fluid transmission paths 316 to provide a supply of secondary process gas to each of the fluid transmission paths 316. . The power transmitted from the power transfer component 702 can be used to convert the secondary process gas to the auxiliary plasma 704. However, in another embodiment, the system 300C may not use the secondary process gas source 709. In this embodiment, power transfer component 702 is defined to convert process gas flowing from plasma generation chamber 355 through fluid transmission path 316 to auxiliary plasma 704. In this embodiment, the fluid transmission path 316 is operated as a plasma amplification region.

  In system 300C, it is understood that fluid transmission path 316, power transfer component 702, and power source 703 can be variously defined to form various types of auxiliary plasma 704 generation regions within fluid transmission path 316. right. For example, in various embodiments, the fluid transmission path 316, the power transfer component 702, and the power source 703 are configured such that the fluid transmission path 316 is a flowable hollow cathode, a flow capacity coupling region, a flow induction coupling region, a flow magnetron drive region, a flow laser. It can be defined to operate as a drive region, or a combination thereof. In other words, in various embodiments, each fluid transmission path 316 is either a hollow cathode, a capacitive coupling source, an inductive coupling source (with an induction coil enclosing the fluid transmission path), or through a magnetron effect or concentrated. It can be operated through another type of ionization means, such as by irradiating a point in the fluid transmission path with laser light. In one embodiment, the fluid transmission path 316 may be used as a hollow cathode medium or as a direct electron beam incident on the fluid transmission path 316 to achieve a sufficient amount of high energy electrons to generate a large amount of ionization. Is operated by.

  Generation of the auxiliary plasma 704 in the fluid transmission path 316 provides an unobstructed line-of-sight transmission from the auxiliary plasma 704 into the substrate processing region 302 and thus provides a controlled increase in ion flux entering the substrate processing region 302. Will be understood. In one embodiment, the power transfer component 702 also generates an electron beam to pass through the fluid transmission path 316 to enhance the generation of ions in the auxiliary plasma 704 formed in the fluid transmission path 316. Includes a defined electron beam source.

  In one embodiment, system 300C also optionally includes an electrode 711 disposed within plasma generation chamber 355 to direct charged species from plasma generation chamber 355 into substrate processing region 302 through fluid transmission path 316. be able to. The electrode 711 can also serve to direct charged species from the auxiliary plasma 704 in the fluid transmission path 316 into the substrate processing region 302. It will be appreciated that the electrode 711 can be connected to a power source to receive a supply of DC power, RW power, or a combination thereof. Also, the polarity of the charge on the electrode 711 can be controlled and changed in a predetermined manner. For example, in one embodiment, power can be supplied to the electrode 711 in a pulsed manner.

  Also, in one embodiment, system 300C can optionally include an electrode 503 and a corresponding power source 505, as described above in connection with FIGS. 5A and 5B. Also, in one embodiment, system 300C optionally includes an electron beam source 363, a conductive grid 365, power sources 387 and 389, and an electron beam gas supply, as described above in connection with FIGS. Part 388. And in one embodiment, the system 300C can include a planar electrode 601 and an insulating member 603, as described above in connection with FIGS. 6A and 6B. In this embodiment, the planar electrode 601 can operate as an extraction grid disposed in the substrate processing region 302 to attract charged species from the fluid transmission path 316 into the substrate processing region 302. Depending on the polarity of the charge supplied to the planar electrode 601, charged species that are attracted from the fluid transmission path 316 into the substrate processing region 302 can include either electrons or positively charged ions. It will be appreciated that, similar to electrode 711, each of electrode 503 and planar electrode 601 can be supplied with DC power, RF power, or a combination thereof. Similarly to the electrode 711, each of the electrode 503 and the planar electrode 601 can be operated by an independent control method such as a continuous energization method or a pulse method.

  In one embodiment, a remote plasma 359 source in the plasma generation chamber 355 can be used as an electron beam source to affect the control of ion flux versus radical flux in the substrate processing region 302. If the remote plasma 359 source in the plasma generation chamber 355 is operated at a substantially negative potential relative to the substrate processing region 302, electrons are transferred from the negative potential of the plasma generation chamber 355 to the fluid transmission path 316. And can be accelerated to reach the positive potential of the substrate processing region 302. As energetic electrons travel through the fluid transmission path 316 and into the substrate processing region 302, they cause ionization in an energy regime where a simple dissociation process is not preferred. Also, the secondary electron generation coefficient can be very high, and in many cases can be higher than the ion generation coefficient associated with the electron interaction process, so if energetic electrons pass through the fluid transmission path 316. If they scatter as they move, these energetic electrons can generate additional secondary electrons.

  It will be appreciated that various types of remote plasma 359 sources can be used for electron beam extraction from the plasma generation chamber 355 into the substrate processing region 302. For example, some embodiments can operate the plasma generation region 355 as a capacitively coupled plasma 359 source generation region, an inductively coupled plasma 359 source generation region, or a microwave plasma 359 source generation region combined with a DC bias. . Also, if the potential difference between the plasma generation chamber 355 and the substrate processing region 302 is not appropriate for electron beam extraction from the plasma generation chamber 355 into the substrate processing region 302, the fluid transmission path from the plasma generation chamber 355, for example, An electron extraction grid can be used to extract electrons into the secondary plasma source region in 316. In such a secondary plasma source region, more ions can be generated from the extracted electrons.

  In view of the above, it will be appreciated that the spatial and / or temporal multiplexing of the electron beam incidence into the substrate processing region 302 facilitates adjustment of the ion flux relative to the radical flux within the substrate processing region 302. Also, the use of an electron beam excited plasma source in combination with a plasma source that is primarily a radical component can provide dynamic range ion flux to radical flux ratio control that cannot be achieved by any other means. You will understand.

  FIG. 8 shows a flowchart of a method 800 for processing a semiconductor substrate according to an embodiment of the present invention. In one embodiment, the plasma driven substrate processing system 300 of FIGS. 3A-4B can be used to implement the method of FIG. The method 800 includes an operation 801 for placing a substrate on a substrate support so as to be exposed to a processing region. The method 800 also includes an operation 803 for generating a plasma in a plasma generation region that is separate from the processing region. The method 800 also includes an operation 805 for supplying a reactive component of the plasma from the plasma generation region to the processing region. The method 800 further causes electrons to be incident above the substrate into the processing region, such that the incident electrons alter the ion density within the processing region to affect the processing of the substrate. The operation 807 is also included.

  In one embodiment of the method 800, incident the substrate into the processing region includes transmitting an electron beam along a trajectory that is substantially parallel to the top surface of the substrate. In one example of this embodiment, the trajectory of the electron beam is second outside the periphery of the substrate support and from a first location above the substrate support to outside the periphery of the substrate support and above the substrate support. Extends straight to the place. In another example of this embodiment, the method 800 forms a steering electric field in the processing region such that the electron beam trajectory extends non-linearly through the processing region under control of the steering electric field. Can be included. In one embodiment, the method 800 also includes a conductive grid at a second location, ie, an electron beam termination location, so that its conduction functions as an electrical sink for the electron beam transmitted along the trajectory. And an operation for applying a positive charge to the conductive grid. In various embodiments of the method 800, electrons can be incident into the processing region in a pulsed or continuous manner.

  In one embodiment, operation 807 for injecting electrons into the processing region transmits a plurality of spatially separated electron beams such that they traverse through the processing chamber and above the top surface of the substrate. Including doing. In one example of this embodiment, each of the plurality of spatially separated electron beams is transmitted in one common direction such that they traverse above the top surface of the substrate in a substantially parallel fashion. In another example of this embodiment, the plurality of spatially separated electron beams are transmitted across the top surface of the substrate in a plurality of different directions substantially parallel to the top surface of the substrate. Also, in one embodiment, the plurality of spatially separated electron beams are such that electrons are incident in a substantially uniform manner, time averaged over the entire processing region exposed to the substrate. , Each transmitted at a different time. The method 800 may also include an operation for applying a bias voltage across the processing region from the substrate support to attract ions that are generated as a result of incident electrons traveling toward the substrate.

  FIG. 9 shows a flowchart of a method 900 for processing a semiconductor substrate, in accordance with one embodiment of the present invention. In one embodiment, the plasma driven substrate processing systems 300A, 300B of FIGS. 5A-6B, or combinations thereof, can be used to implement the method of FIG. The method 900 includes an operation 901 for placing a substrate on a substrate support so as to be exposed to a processing region. Method 900 also includes an operation 903 for generating a plasma in a plasma generation region that is separate from the processing region. The method 900 also includes an operation 905 for supplying a reactive component of the plasma from the plasma generation region to the processing region. The method 900 further provides power to one or more electrodes disposed in the processing region separately from the substrate support, such that power supplied to the one or more electrodes is transmitted from the one or more electrodes. Also included is an operation 907 for injecting electrons into the processing region and changing the ion density within the processing region to affect the processing of the substrate.

In one embodiment, the one or more electrodes, like the electrode 503 in FIG. 5A, have a conductive band disposed outside the periphery of the substrate support and above the substrate support so as to be exposed to the processing region. Including. In one embodiment, the conductive band is formed as a continuous structure that surrounds the periphery of the substrate support. Also, in one embodiment, the one or more electrodes, such as the planar electrode 601 in FIG. 6A, are planar above the substrate support so as to be exposed to the processing region and to cover the substrate support. Of conductive segments. Also, in one embodiment, the one or more electrodes are exposed to a processing band disposed outside the periphery of the substrate support and above the substrate support so as to be exposed to the processing region. In this way, both of the planar conductive segments are arranged above the substrate support and so as to cover the substrate support.

  In one embodiment, supplying power to one or more electrodes in operation 907 includes supplying DC power, radio frequency power, or a combination of DC power and radio frequency power to the one or more electrodes. . In one embodiment, power is supplied to one or more electrodes in a pulsed manner. In one embodiment, power is supplied to one or more electrodes in a continuous manner. In one embodiment, supplying power to one or more electrodes in operation 907 includes alternating the polarity of charge on the one or more electrodes. In one embodiment, the method can also include an operation for applying a bias voltage across the processing region from the substrate support to attract ions generated as a result of incident electrons traveling toward the substrate.

  FIG. 10 shows a flowchart of a method 1000 for processing a semiconductor substrate, in accordance with one embodiment of the present invention. In one embodiment, a plasma driven substrate processing system 300C can be used to perform the method of FIG. In one embodiment, plasma driven substrate processing system 300C may be combined with one or more components of plasma driven substrate processing systems 300, 300A, and 300B to perform the method of FIG. Method 1000 includes an operation 1001 for placing a substrate on a substrate support so as to be exposed to a processing region. Method 1000 also includes an operation 1003 for generating a plasma in a plasma generation region that is separate from the processing region. The method 1000 also provides for supplying plasma reactive components from the plasma generation region into the processing region through a plurality of fluid transmission paths, such that the plasma reactive components affect the processing of the substrate. Operation 1005 is also included. The method 1000 further includes an operation 1007 for generating an auxiliary plasma in the plurality of fluid transmission paths. The method 1000 further provides an operation 1009 for supplying auxiliary plasma reactive components from a plurality of fluid transmission paths into the processing region, such that the auxiliary plasma reactive components affect the processing of the substrate. Including.

  In one embodiment, generating an auxiliary plasma in operation 1007 may include providing a plurality of fluid transmission paths to a flow hollow cathode, a flow capacitive coupling region, a flow induction coupling region, a flow magnetron drive region, a flow laser drive region, or a combination thereof. Including operating as any of the combinations. Also, in one embodiment, generating an auxiliary plasma in the plurality of fluid transmission paths in operation 1007 transmits direct current power, radio frequency power, or a combination of DC power and radio frequency power to the plurality of fluid transmission paths. Including doing. In one embodiment, power is transmitted in a pulsed fashion over a plurality of fluid transmission paths. In another embodiment, power is transmitted in a continuous manner over a plurality of fluid transmission paths. In one embodiment, generating the auxiliary plasma in the plurality of fluid transmission paths in operation 1007 includes supplying a process gas to each of the plurality of fluid transmission paths.

  In one embodiment, supplying the plasma reaction component from the plasma generation region into the processing region through the plurality of fluid transmission paths in operation 1005 directs charged species from the plasma generation region into the processing region through the plurality of fluid transmission paths. And operating an electrode disposed in the plasma generation region for the purpose. Also, in one embodiment, supplying the reactive component of the auxiliary plasma from the plurality of fluid transmission paths into the processing region in operation 1009 is within the processing chamber to attract charged species from the plurality of fluid transmission paths into the processing region. Operating an extraction grid arranged in

  In one embodiment, the method 1000 further causes electrons to be incident above the substrate into the processing region, so that the incident electrons alter the ion density in the processing region and affect the processing of the substrate. It also includes the action to make it affect. In one embodiment, the method 1000 also provides power to one or more electrodes that are separated from the substrate support and disposed within the processing region, such that the power supplied to the one or more electrodes is 1. Also included is an operation for injecting electrons from one or more electrodes into the processing region and changing the ion density in the processing region to affect the processing of the substrate.

While this invention has been described in terms of several embodiments, those skilled in the art will recognize various alternatives, additions, substitutions, and equivalents by reading the foregoing specification and examining the drawings. You will see that you will recognize. The present invention includes all such alternatives, additions, substitutions, and equivalents as included within the true spirit and scope of the invention.
The present invention can also be realized in the following manner, for example.

Application example 1:
A semiconductor substrate processing system,
A processing chamber;
A substrate support defined to support the substrate within the processing chamber;
A plasma chamber defined separately from the processing chamber, wherein the plasma chamber is defined to generate plasma;
A plurality of fluid transmission paths fluidly connecting the plasma chamber to the processing chamber, the plurality of fluid transmission paths defined to supply reactive components of the plasma from the plasma chamber to the processing chamber;
An electron beam source defined to generate an electron beam and transmit the electron beam through the processing chamber and across the substrate support;
A semiconductor substrate processing system comprising:

Application example 2:
A semiconductor substrate processing system according to Application Example 1,
A semiconductor substrate processing system, wherein the electron beam source is defined to transmit the electron beam along a trajectory substantially parallel to a surface of the substrate support defined to support the substrate.

Application example 3:
A semiconductor substrate processing system according to Application Example 1,
The semiconductor substrate processing system, wherein the electron beam source is defined to transmit a plurality of spatially separated electron beams through the processing chamber and across the substrate support in a common direction. .

Application example 4:
A semiconductor substrate processing system according to Application Example 1,
The electron beam source is defined to transmit a plurality of spatially separated electron beams to traverse through the processing chamber and over the substrate support in respective directions. Processing system.

Application example 5:
A semiconductor substrate processing system according to Application Example 4,
The semiconductor substrate processing system, wherein the electron beam source is defined to sequentially transmit the plurality of spatially separated electron beams.

Application Example 6:
A semiconductor substrate processing system according to Application Example 1,
A plurality of conductive grids positioned outside the periphery of the substrate support and above the substrate support, wherein a controlled voltage level is applied to each of the plurality of conductive grids in an independent control manner. A semiconductor substrate processing system comprising a plurality of conductive grids electrically connected to the power supply unit.

Application example 7:
A semiconductor substrate processing system according to Application Example 6,
The electron beam source is defined as a hollow cathode positioned outside the periphery of the substrate support and above the substrate support, the hollow cathode being a region of the processing chamber above the substrate support. Oriented to face,
A predetermined one of the plurality of conductive grids includes an outlet of the hollow cathode and the region of the processing chamber above the substrate support to facilitate extraction of electrons from the hollow cathode. A semiconductor substrate processing system disposed between them.

Application Example 8:
A semiconductor substrate processing system according to Application Example 7,
Another one of the plurality of conductive grids includes the outlet of the hollow cathode across the substrate support to provide an electrical sink for the electron beam transmitted by the hollow cathode. Is a semiconductor substrate processing system arranged on the opposite side.

Application example 9:
A semiconductor substrate processing system according to Application Example 7,
A semiconductor substrate processing system comprising a heater connected to the plurality of conductive grids to control the temperature of the plurality of conductive grids.

Application Example 10:
A semiconductor substrate processing system according to Application Example 7,
A gas supply in fluid communication with an internal region of the hollow cathode, the gas supply being defined to supply process gas to the internal region of the hollow cathode;
A power supply in electrical communication with one or more power transfer components in the internal region of the hollow cathode for converting the process gas into plasma within the internal region of the hollow cathode A power supply defined to supply DC power, radio frequency power, or a combination of DC power and radio frequency power to the one or more power transfer components in the interior region of the hollow cathode;
A semiconductor substrate processing system comprising:

Application Example 11:
A method for processing a semiconductor substrate, comprising:
Placing the substrate on the substrate support to be exposed to the processing area;
Generating a plasma in a plasma generation region separated from the processing region;
Supplying a reactive component of the plasma from the plasma generation region to the processing region;
Injecting electrons into the processing region above the substrate, such that the incident electrons alter the ion density in the processing region to affect the processing of the substrate; ,
A method comprising:

Application Example 12:
A method for processing a semiconductor substrate of Application Example 11,
Injecting electrons into the processing region includes transmitting an electron beam along a trajectory substantially parallel to the top surface of the substrate.

Application Example 13:
A method for processing a semiconductor substrate of Application Example 12,
The trajectory of the electron beam is outside a periphery of the substrate support and from a first location above the substrate support to a second location outside the periphery of the substrate support and above the substrate support. A method that stretches linearly.

Application Example 14:
A method for processing a semiconductor substrate of application example 13, further comprising:
Applying a positive charge to the conductive grid such that the conductive grid at the second location functions as an electrical sink for the electron beam transmitted along the trajectory.

Application Example 15:
A method for processing a semiconductor substrate of Application Example 11,
The method wherein the electrons are incident into the processing region in a pulsed manner.

Application Example 16:
A method for processing a semiconductor substrate of Application Example 11,
Injecting electrons into the processing region includes transmitting a plurality of spatially separated electron beams through the processing chamber and across the top surface of the substrate.

Application Example 17:
A method for processing a semiconductor substrate of Application Example 16,
Each of the plurality of spatially separated electron beams is transmitted in a common direction such that the plurality of spatially separated electron beams traverse above the top surface of the substrate in a substantially parallel fashion. The way it is.

Application Example 18:
A method for processing a semiconductor substrate of Application Example 16,
The different electron beams of the plurality of spatially separated electron beams are such that electrons are incident in a substantially uniform manner, time-averaged over the entire processing region exposed to the substrate. , Each is transmitted at a different time.

Application Example 19:
A method for processing a semiconductor substrate of Application Example 16,
The spatially separated plurality of electron beams are transmitted across a top surface of the substrate in a plurality of different directions substantially parallel to the top surface of the substrate.

Application Example 20:
A method for processing a semiconductor substrate of Application Example 11,
The different electron beams of the plurality of spatially separated electron beams are such that electrons are incident in a substantially uniform manner, time-averaged over the entire processing region exposed to the substrate. , Each is transmitted at a different time.

Application Example 21:
A semiconductor substrate processing system,
A processing chamber;
A substrate support defined to support the substrate within the processing chamber;
A plasma chamber defined separately from the processing chamber, wherein the plasma chamber is defined to generate plasma;
A plurality of fluid transmission paths fluidly connecting the plasma chamber to the processing chamber, the plurality of fluid transmission paths defined to supply reactive components of the plasma from the plasma chamber to the processing chamber;
An electrode disposed in the processing chamber separate from the substrate support;
A power supply electrically connected to the electrode, wherein the power supply is defined to supply power to the electrode to liberate electrons from the electrode into the processing chamber;
A semiconductor substrate processing system comprising:

Application Example 22:
A semiconductor substrate processing system according to application example 21,
The semiconductor substrate processing system, wherein the electrode is defined as a conductive band disposed outside the periphery of the substrate support in the processing chamber and above the substrate support.

Application Example 23:
A semiconductor substrate processing system according to application example 22,
The semiconductor substrate processing system, wherein the conductive band is formed as a continuous structure surrounding a periphery of the substrate support.

Application Example 24:
The semiconductor substrate processing system of application example 23,
A semiconductor substrate processing system comprising an insulating member formed and arranged around the electrode to electrically insulate the electrode from a surrounding structure of the processing chamber.

Application Example 25:
A semiconductor substrate processing system according to application example 21,
The semiconductor substrate processing system, wherein the electrode is defined as a planar conductive segment disposed above and over the substrate support in the processing chamber.

Application Example 26:
A semiconductor substrate processing system according to Application Example 25,
A top plate assembly disposed above the substrate support to decouple the plasma chamber from the processing chamber, wherein the plurality of fluid transmission paths are defined in the top plate assembly and the planar conductive A semiconductor substrate processing system comprising a top plate assembly, wherein a segment is defined on a bottom surface of the top plate assembly in a direction facing the substrate support.

Application Example 27:
A semiconductor substrate processing system according to application example 26,
An insulating member formed and disposed between the planar conductive segment and the top plate assembly to electrically insulate the planar conductive segment from surrounding structures of the top plate assembly and the processing chamber. A semiconductor substrate processing system comprising:

Application Example 28:
A semiconductor substrate processing system according to application example 21,
The semiconductor substrate processing system, wherein the power supply unit is determined to supply DC power, radio frequency power, or a combination of DC power and radio frequency power to the electrodes.

Application Example 29:
A semiconductor substrate processing system according to application example 21,
The semiconductor substrate processing system, wherein the power supply unit is determined to supply power to the electrode in either a pulse method or a continuous method.

Application Example 30:
A semiconductor substrate processing system according to application example 21,
The electrode includes a conductive band disposed outside the periphery of the substrate support in the processing chamber and above the substrate support; and the substrate support in the processing chamber above the substrate support and the substrate support. A semiconductor substrate processing system comprising both planar conductive segments arranged to cover.

Application Example 31:
A method for processing a semiconductor substrate, comprising:
Placing the substrate on the substrate support to be exposed to the processing area;
Generating a plasma in a plasma generation region separated from the processing region;
Supplying a reactive component of the plasma from the plasma generation region to the processing region;
Power is supplied to one or more electrodes that are separated from the substrate support and disposed in the processing region, so that the power supplied to the one or more electrodes is applied to the processing from the one or more electrodes. Injecting electrons into the region and changing the ion density in the processing region to affect the processing of the substrate;
A method comprising:

Application Example 32:
A method for processing a semiconductor substrate of Application Example 31,
The method wherein the one or more electrodes include a conductive band disposed outside the periphery of the substrate support and over the substrate support to be exposed to the processing region.

Application Example 33:
A method for processing a semiconductor substrate of Application Example 32, comprising:
The method wherein the conductive band is formed as a continuous structure surrounding the periphery of the substrate support.

Application Example 34:
A method for processing a semiconductor substrate of Application Example 31,
The method wherein the one or more electrodes include a planar conductive segment disposed above and over the substrate support to be exposed to the processing region.

Application Example 35:
A method for processing a semiconductor substrate of Application Example 31,
The one or more electrodes are exposed to a processing band disposed outside the periphery of the substrate support and above the substrate support to be exposed to the processing region, and to the processing region. A method comprising both planar conductive segments disposed above and over the substrate support.

Application Example 36:
A method for processing a semiconductor substrate of Application Example 31,
Providing power to the one or more electrodes includes supplying DC power, radio frequency power, or a combination of DC power and radio frequency power to the one or more electrodes.

Application Example 37:
A method for processing a semiconductor substrate of Application Example 31,
The method wherein the power is supplied to one or more electrodes in a pulsed manner.

Application Example 38:
A method for processing a semiconductor substrate of Application Example 31,
The method wherein the power is supplied to one or more electrodes in a continuous manner.

Application Example 39:
A method for processing a semiconductor substrate of Application Example 31,
The method of supplying power to the one or more electrodes includes altering the polarity of charge on the one or more electrodes.

Application Example 40:
A method for processing a semiconductor substrate of Application Example 31, further comprising:
Applying a bias voltage across the processing region from the substrate support to attract ions generated as a result of the incident electrons traveling toward the substrate.

Application Example 41:
A semiconductor substrate processing system,
A processing chamber;
A substrate support defined to support the substrate within the processing chamber;
A plasma chamber defined separately from the processing chamber, wherein the plasma chamber is defined to generate plasma;
A plurality of fluid transmission paths fluidly connecting the plasma chamber to the processing chamber, the plurality of fluid transmission paths defined to supply reactive components of the plasma from the plasma chamber to the processing chamber;
A plurality of power transmission components defined to transmit power to the plurality of fluid transmission paths to generate an auxiliary plasma in the plurality of fluid transmission paths, the plurality of fluid transmission paths comprising the auxiliary fluid paths; A plurality of power transfer components defined to supply a reactive component of a plasma to the processing chamber;
A semiconductor substrate processing system comprising:

Application Example 42:
A semiconductor substrate processing system according to application example 41,
The semiconductor substrate processing system, wherein the plurality of power transfer components includes one or more electrodes arranged to be exposed within each of the plurality of fluid transmission paths.

Application Example 43:
A semiconductor substrate processing system according to application example 41,
The plurality of power transfer components includes one or more coils disposed to induce a current within each of the plurality of fluid transmission paths.

Application Example 44:
A semiconductor substrate processing system according to application example 41,
The semiconductor substrate processing system, wherein the plurality of power transfer components includes one or more lasers disposed to direct laser energy within each of the plurality of fluid transmission paths.

Application Example 45:
A semiconductor substrate processing system according to application example 41,
The semiconductor substrate processing system, wherein the plurality of power transfer components includes an electron beam source defined to generate an electron beam and transmit the electron beam through the plurality of fluid transmission paths.

Application Example 46:
A semiconductor substrate processing system according to application example 41,
A power supply unit electrically connected to each of the plurality of power transfer components, wherein DC power, radio frequency power, or a combination of DC power and radio frequency power is supplied to each of the plurality of power transfer components A semiconductor substrate processing system comprising a power supply unit determined to do.

Application Example 47:
A semiconductor substrate processing system according to application example 41,
The semiconductor substrate processing system, wherein the plurality of fluid transmission paths are defined as a flow hollow cathode, a flow capacitive coupling region, a flow induction coupling region, a flow magnetron drive region, a flow laser drive region, or a combination thereof.

Application Example 48:
A semiconductor substrate processing system according to application example 41,
A process gas supply unit connected in fluid communication with the interior of each of the plurality of fluid transmission paths, the process gas being supplied to the interior of each of the plurality of fluid transmission paths for generating the auxiliary plasma A semiconductor substrate processing system comprising a process gas supply unit determined to be.

Application Example 49:
A semiconductor substrate processing system according to application example 41,
A semiconductor substrate processing system comprising an electrode disposed in the plasma chamber for directing charged species from the plasma chamber to the processing chamber through the plurality of fluid transmission paths.

Application example 50:
A semiconductor substrate processing system according to application example 41,
A semiconductor substrate processing system comprising an extraction grid disposed in the processing chamber to attract charged species from the fluid transmission path into the processing chamber.

Application Example 51:
A method for processing a semiconductor substrate, comprising:
Placing the substrate on the substrate support to be exposed to the processing area;
Generating a plasma in a plasma generation region separated from the processing region;
Supplying the plasma reaction component from the plasma generation region into the processing region through a plurality of fluid transmission paths, such that the plasma reaction component affects the processing of the substrate;
Generating auxiliary plasma in the plurality of fluid transmission paths;
Supplying reaction components of the auxiliary plasma from the plurality of fluid transmission paths into the processing region, such that the reaction components of the auxiliary plasma affect the processing of the substrate;
A method comprising:

Application Example 52:
A method for processing a semiconductor substrate of Application Example 51,
Generating the auxiliary plasma operates the plurality of fluid transmission paths as a flow hollow cathode, a flow capacitive coupling region, a flow induction coupling region, a flow magnetron drive region, a flow laser drive region, or a combination thereof. Including a method.

Application Example 53:
A method for processing a semiconductor substrate of Application Example 51,
Supplying reactive components of the auxiliary plasma from the plurality of fluid transmission paths into the processing region is disposed in the processing chamber to attract charged species from the plurality of fluid transmission paths into the processing region. A method comprising operating an extraction grid.

Application Example 54:
A method for processing a semiconductor substrate of Application Example 51,
Supplying the reactive components of the plasma from the plasma generation region into the processing region through the plurality of fluid transmission paths directs charged species from the plasma generation region into the processing region through the plurality of fluid transmission paths. Operating an electrode disposed in the plasma generation region for the purpose.

Application Example 55:
A method for processing a semiconductor substrate of Application Example 51,
Generating an auxiliary plasma in the plurality of fluid transmission paths includes transmitting DC power, radio frequency power, or a combination of DC power and radio frequency power to the plurality of fluid transmission paths.

Application Example 56:
A method for processing a semiconductor substrate of Application Example 55,
The method wherein the power is transmitted in a pulsed manner to the plurality of fluid transmission paths.

Application Example 57:
A method for processing a semiconductor substrate of Application Example 55,
The method wherein the power is transmitted in a continuous manner to the plurality of fluid transmission paths.

Application Example 58:
A method for processing a semiconductor substrate of Application Example 51,
Generating an auxiliary plasma in the plurality of fluid transmission paths includes supplying a process gas into each of the plurality of fluid transmission paths.

Application Example 59:
A method for processing a semiconductor substrate of Application Example 51, further comprising:
Injecting electrons into the processing region above the substrate, such that the incident electrons change the ion density in the processing region to affect the processing of the substrate. How to prepare.

Application Example 60:
A method for processing a semiconductor substrate of Application Example 51, further comprising:
Power is supplied to one or more electrodes that are separated from the substrate support and disposed in the processing region, so that the power supplied to the one or more electrodes is applied to the processing from the one or more electrodes. A method comprising injecting electrons into a region and changing an ion density in the processing region to affect the processing of the substrate.

Claims (22)

A semiconductor substrate processing system,
A processing chamber;
A substrate support defined to support the substrate within the processing chamber;
A plasma chamber defined separately from the processing chamber, the plasma chamber defined for the generation of plasma therein;
A top plate assembly disposed above the substrate support for separating the plasma chamber from the processing chamber, wherein a plurality of fluid transmission paths are defined to extend to the top plate assembly, the plurality of fluid transmissions A path is a plurality of fluid transmission paths that fluidly connect the plasma chamber to the processing chamber, the top plate being defined to provide movement of reactive components of the plasma from the plasma chamber to the processing chamber Assembly ,
A planar electrode disposed above the substrate support and defined as a planar conductive segment defined on a bottom surface of the top plate assembly;
An electrode defined as a conductive band disposed outside the periphery of the substrate support in the processing chamber and above the substrate support, the electrode being disposed separately from the substrate support, and disposed in the processing chamber. An electrode having a surface directly exposed to an area covering a substrate support, wherein the conductive band is formed as a continuous structure surrounding a periphery of the substrate support;
A first power supply unit electrically connected to the electrode and defined to supply power to the electrode;
A second power supply unit electrically connected to the planar electrode, wherein the second power supply unit is configured to supply power to the planar electrode;
A semiconductor substrate processing system comprising: The semiconductor substrate processing system according to claim 1,
The semiconductor substrate processing system, wherein the first power supply unit is determined to supply DC power, radio frequency power, or a combination of DC power and radio frequency power to the electrodes. The semiconductor substrate processing system according to claim 1,
The semiconductor substrate processing system, wherein the first power supply unit is determined to supply power to the electrodes in a pulse manner. The semiconductor substrate processing system according to claim 1,
The semiconductor substrate processing system, wherein the first power supply unit is determined to supply power to the electrodes by a polarity alternation method. The semiconductor substrate processing system according to claim 1,
The semiconductor substrate processing system, wherein the first power supply unit is determined to supply power to the electrodes in a continuous manner. The semiconductor substrate processing system according to claim 1, further comprising:
A semiconductor substrate processing system comprising an insulating member formed and disposed around the electrode to electrically insulate the electrode from surrounding conductive structures. The semiconductor substrate processing system according to claim 1,
The semiconductor substrate processing system, wherein the electrode is configured to form a hollow cathode configuration within the region covering the substrate support within the processing chamber. The semiconductor substrate processing system according to claim 1,
The semiconductor substrate processing system , wherein the second power supply unit is determined to supply DC power, radio frequency power, or a combination of DC power and radio frequency power to the planar electrode . The semiconductor substrate processing system according to claim 1, further comprising:
A process gas source in fluid communication with the plasma chamber to transmit process gas to the plasma chamber;
A coil assembly arranged to transmit radio frequency power through the plasma chamber to convert the process gas in the plasma chamber to the plasma in the plasma chamber;
A semiconductor substrate processing system. The semiconductor substrate processing system according to claim 9,
The semiconductor substrate processing system, wherein the plasma chamber is formed in part by a window that provides transmission of radio frequency power from the coil assembly to the process gas in the processing chamber. A method for processing a semiconductor substrate, comprising:
Placing the substrate on the substrate support to be exposed to the processing area;
Generating a plasma in a plasma generation region separated from the processing region;
Supplying a reactive component of the plasma from the plasma generation region to the processing region;
Supplying power to an electrode defined as a conductive band disposed outside the periphery of the substrate support and above the substrate support so as to be exposed to the processing region , wherein the conductive band is the formed as a continuous structure surrounding the periphery of the substrate support, wherein the electrode is disposed separately from the substrate support has a surface directly exposed to the processing region overlying the substrate, wherein the electric power, the process to change the ion density in the region Ru is supplied to the electrode to affect the processing of the substrate, the supply of electric power,
Supplying power to a planar electrode that is above the substrate support and between the plasma generation region and the processing region and exposed to the processing region;
A method comprising: A method for processing a semiconductor substrate according to claim 11, comprising:
The method wherein the power supplied to the electrode is DC power. A method for processing a semiconductor substrate according to claim 11, comprising:
The method wherein the power supplied to the electrode is radio frequency power. A method for processing a semiconductor substrate according to claim 11, comprising:
The method wherein the power supplied to the electrode is a combination of DC power and radio frequency power. A method for processing a semiconductor substrate according to claim 11, comprising:
The method wherein the power is supplied to the electrodes in a pulsed manner. A method for processing a semiconductor substrate according to claim 11, comprising:
The method wherein the power is supplied to the electrodes in a polarity alternation manner. A method for processing a semiconductor substrate according to claim 11, comprising:
The method wherein the power is supplied to the electrodes in a continuous manner. A method for processing a semiconductor substrate according to claim 11, further comprising:
A method of operating the electrode such that electrons liberated from the electrode cross the processing region and reach the opposite side of the electrode to create a hollow cathode effect in the processing region. A method for processing a semiconductor substrate according to claim 11, further comprising:
Supplying a process gas to the plasma generation region;
Supplying radio frequency power to a coil assembly disposed outside the plasma generation region to convert the process gas into the plasma within the plasma generation region;
A method comprising: A method for processing a semiconductor substrate according to claim 11, further comprising:
Applying a bias voltage across the processing region from the substrate support to attract ions in the plasma to the substrate on the substrate support. A method for processing a semiconductor substrate according to claim 11, comprising:
The power supplied to the planar electrode attracts positively charged ions toward the planar electrode, releasing electrons into the processing region. A method for processing a semiconductor substrate according to claim 11, comprising:
The power supplied to the planar electrode attracts electrons toward the planar electrode and repels positively charged ions into the processing region.

Images