AU2001280200A1 - Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator - Google Patents

Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator

Info

Publication number
AU2001280200A1
AU2001280200A1 AU2001280200A AU8020001A AU2001280200A1 AU 2001280200 A1 AU2001280200 A1 AU 2001280200A1 AU 2001280200 A AU2001280200 A AU 2001280200A AU 8020001 A AU8020001 A AU 8020001A AU 2001280200 A1 AU2001280200 A1 AU 2001280200A1
Authority
AU
Australia
Prior art keywords
magnetic field
field generator
plasma
etching apparatus
plasma etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001280200A
Inventor
Yuki Chiba
Jun Hirose
Akira Kodashima
Kazuhiro Kubota
Koji Miyata
Shigeki Tozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Tokyo Electron Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Tokyo Electron Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of AU2001280200A1 publication Critical patent/AU2001280200A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
AU2001280200A 2000-09-01 2001-08-28 Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator Abandoned AU2001280200A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-265728 2000-09-01
JP2000265728 2000-09-01
PCT/JP2001/007355 WO2002021585A1 (en) 2000-09-01 2001-08-28 Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator

Publications (1)

Publication Number Publication Date
AU2001280200A1 true AU2001280200A1 (en) 2002-03-22

Family

ID=18752954

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001280200A Abandoned AU2001280200A1 (en) 2000-09-01 2001-08-28 Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator

Country Status (8)

Country Link
US (1) US7922865B2 (en)
EP (1) EP1329947B1 (en)
JP (1) JP4817592B2 (en)
KR (1) KR100863098B1 (en)
CN (1) CN100568461C (en)
AU (1) AU2001280200A1 (en)
TW (1) TW544802B (en)
WO (1) WO2002021585A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100403616B1 (en) * 2001-01-03 2003-10-30 삼성전자주식회사 Method for simulation of plasma processing by a plasma apparatus
DE10147998A1 (en) * 2001-09-28 2003-04-10 Unaxis Balzers Ag Method and device for generating a plasma
JP2003309107A (en) * 2002-04-12 2003-10-31 Tokyo Electron Ltd Etching method for laminated film
JP4412661B2 (en) * 2004-10-15 2010-02-10 信越化学工業株式会社 Plasma processing apparatus and plasma processing method
US7618521B2 (en) * 2005-03-18 2009-11-17 Applied Materials, Inc. Split magnet ring on a magnetron sputter chamber
JP4558563B2 (en) * 2005-04-11 2010-10-06 信越化学工業株式会社 Permanent magnet type magnetic field generator
KR20100099054A (en) * 2009-03-02 2010-09-10 신에쓰 가가꾸 고교 가부시끼가이샤 Permanent magnet type magnetic field generating apparatus
KR101107047B1 (en) * 2009-09-16 2012-01-25 아쿠아셀 주식회사 Hand shower
US8590485B2 (en) * 2010-04-26 2013-11-26 Varian Semiconductor Equipment Associates, Inc. Small form factor plasma source for high density wide ribbon ion beam generation
TWI434624B (en) * 2010-07-02 2014-04-11 Ind Tech Res Inst Magnetic modue of electron cyclotron resonance and electron cyclotron resonance apparatus using the same
US20120312233A1 (en) * 2011-06-10 2012-12-13 Ge Yi Magnetically Enhanced Thin Film Coating Method and Apparatus
JP6009171B2 (en) * 2012-02-14 2016-10-19 東京エレクトロン株式会社 Substrate processing equipment
JP6052278B2 (en) * 2012-03-02 2016-12-27 日本電気株式会社 Motion determination device, motion determination system, and motion determination method
CN105586566B (en) * 2014-11-03 2018-05-25 北京北方华创微电子装备有限公司 A kind of reaction chamber and semiconductor processing equipment
US10784085B2 (en) * 2015-02-04 2020-09-22 Applied Materials, Inc. Plasma processing reactor with a magnetic electron-blocking filter external of the chamber and uniform field within the chamber
JP6948788B2 (en) * 2016-12-15 2021-10-13 東京エレクトロン株式会社 Plasma processing equipment
US11915915B2 (en) 2021-05-28 2024-02-27 Applied Materials, Inc. Apparatus for generating magnetic fields during semiconductor processing

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3311064B2 (en) * 1992-03-26 2002-08-05 株式会社東芝 Plasma generation device, surface treatment device and surface treatment method
US5444207A (en) * 1992-03-26 1995-08-22 Kabushiki Kaisha Toshiba Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field
JP3238200B2 (en) * 1992-07-17 2001-12-10 株式会社東芝 Substrate processing apparatus and semiconductor element manufacturing method
JP2704352B2 (en) * 1993-01-22 1998-01-26 信越化学工業株式会社 Magnetic field generator
EP0661728B1 (en) * 1993-12-28 1997-06-11 Shin-Etsu Chemical Co., Ltd. Dipole ring magnet for use in magnetron sputtering or magnetron etching
JP3124204B2 (en) * 1994-02-28 2001-01-15 株式会社東芝 Plasma processing equipment
US5659276A (en) * 1995-07-12 1997-08-19 Shin-Etsu Chemical Co., Ltd. Magnetic field generator for magnetron plasma
JPH09260355A (en) * 1996-03-22 1997-10-03 Toshiba Corp Magnetron discharge type plasma surface treatment equipment and its treatment method
US5659176A (en) * 1996-03-28 1997-08-19 Xerox Corporation Scanning corotron
JP3281545B2 (en) * 1996-07-26 2002-05-13 東京エレクトロン株式会社 Plasma processing equipment
TW351825B (en) * 1996-09-12 1999-02-01 Tokyo Electron Ltd Plasma process device
JP3646968B2 (en) * 1998-05-22 2005-05-11 信越化学工業株式会社 Magnetron plasma magnetic field generator
US6562189B1 (en) * 2000-05-19 2003-05-13 Applied Materials Inc. Plasma reactor with a tri-magnet plasma confinement apparatus

Also Published As

Publication number Publication date
JP4817592B2 (en) 2011-11-16
JP5306425B2 (en) 2013-10-02
US7922865B2 (en) 2011-04-12
US20040094509A1 (en) 2004-05-20
WO2002021585A1 (en) 2002-03-14
KR20030051632A (en) 2003-06-25
JPWO2002021585A1 (en) 2004-01-15
EP1329947B1 (en) 2012-07-04
EP1329947A1 (en) 2003-07-23
CN100568461C (en) 2009-12-09
TW544802B (en) 2003-08-01
KR100863098B1 (en) 2008-10-13
EP1329947A4 (en) 2008-08-20
JP2011228746A (en) 2011-11-10
CN1451175A (en) 2003-10-22

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