AU2001277700A1 - Radial antenna and plasma processing apparatus comprising the same - Google Patents

Radial antenna and plasma processing apparatus comprising the same

Info

Publication number
AU2001277700A1
AU2001277700A1 AU2001277700A AU7770001A AU2001277700A1 AU 2001277700 A1 AU2001277700 A1 AU 2001277700A1 AU 2001277700 A AU2001277700 A AU 2001277700A AU 7770001 A AU7770001 A AU 7770001A AU 2001277700 A1 AU2001277700 A1 AU 2001277700A1
Authority
AU
Australia
Prior art keywords
same
processing apparatus
plasma processing
radial antenna
antenna
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001277700A
Inventor
Nobuo Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001277700A1 publication Critical patent/AU2001277700A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
AU2001277700A 2000-08-02 2001-08-02 Radial antenna and plasma processing apparatus comprising the same Abandoned AU2001277700A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-234497 2000-08-02
JP2000234497A JP4593741B2 (en) 2000-08-02 2000-08-02 Radial antenna and plasma processing apparatus using the same
PCT/JP2001/006658 WO2002013249A1 (en) 2000-08-02 2001-08-02 Radial antenna and plasma processing apparatus comprising the same

Publications (1)

Publication Number Publication Date
AU2001277700A1 true AU2001277700A1 (en) 2002-02-18

Family

ID=18726855

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001277700A Abandoned AU2001277700A1 (en) 2000-08-02 2001-08-02 Radial antenna and plasma processing apparatus comprising the same

Country Status (7)

Country Link
US (1) US7807019B2 (en)
EP (1) EP1315201A4 (en)
JP (1) JP4593741B2 (en)
KR (1) KR100479794B1 (en)
AU (1) AU2001277700A1 (en)
TW (1) TW520620B (en)
WO (1) WO2002013249A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4680400B2 (en) * 2001-02-16 2011-05-11 東京エレクトロン株式会社 Plasma device and manufacturing method thereof
JP4141764B2 (en) * 2002-08-20 2008-08-27 東京エレクトロン株式会社 Plasma processing equipment
US8244971B2 (en) * 2006-07-31 2012-08-14 Google Inc. Memory circuit system and method
JP4873405B2 (en) * 2006-03-24 2012-02-08 東京エレクトロン株式会社 Plasma processing apparatus and method
JP4593652B2 (en) * 2008-06-06 2010-12-08 東京エレクトロン株式会社 Microwave plasma processing equipment
KR101069384B1 (en) * 2008-11-14 2011-09-30 세메스 주식회사 Inductively coupled plasma antenna and plasma process apparatus including the same
WO2013098795A1 (en) * 2011-12-29 2013-07-04 Selex Galileo S.P.A. Slotted waveguide antenna for near-field focalization of electromagnetic radiation
JP5882777B2 (en) * 2012-02-14 2016-03-09 東京エレクトロン株式会社 Deposition equipment
US9928993B2 (en) * 2015-01-07 2018-03-27 Applied Materials, Inc. Workpiece processing chamber having a rotary microwave plasma antenna with slotted spiral waveguide
JP6486207B2 (en) * 2015-06-04 2019-03-20 東京エレクトロン株式会社 Plasma processing equipment
JP6843087B2 (en) * 2018-03-12 2021-03-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing methods, substrate processing devices and programs
CN112691297B (en) * 2020-11-19 2022-03-04 成都恒波医疗器械有限公司 Saddle-shaped microwave irradiator
US11948776B2 (en) * 2021-01-21 2024-04-02 Hitachi High-Tech Corporation Plasma processing apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2641450B2 (en) * 1987-05-27 1997-08-13 株式会社日立製作所 Plasma processing equipment
JP3123175B2 (en) 1992-01-21 2001-01-09 株式会社日立製作所 Plasma processing equipment
EP0725164A3 (en) * 1992-01-30 1996-10-09 Hitachi Ltd Method and apparatus for generating plasma, and semiconductor processing methods
JPH07263187A (en) * 1994-03-18 1995-10-13 Hitachi Ltd Plasma treatment device
JPH097998A (en) 1995-06-20 1997-01-10 Hitachi Ltd Plasma ashing apparatus
JP3491190B2 (en) * 1997-07-28 2004-01-26 東京エレクトロン株式会社 Plasma processing equipment
JP3813741B2 (en) * 1998-06-04 2006-08-23 尚久 後藤 Plasma processing equipment
KR100745495B1 (en) * 1999-03-10 2007-08-03 동경 엘렉트론 주식회사 Semiconductor fabrication method and semiconductor fabrication equipment

Also Published As

Publication number Publication date
KR20030012851A (en) 2003-02-12
EP1315201A1 (en) 2003-05-28
EP1315201A4 (en) 2006-04-26
KR100479794B1 (en) 2005-03-31
JP2002050613A (en) 2002-02-15
JP4593741B2 (en) 2010-12-08
US7807019B2 (en) 2010-10-05
TW520620B (en) 2003-02-11
US20040027302A1 (en) 2004-02-12
WO2002013249A1 (en) 2002-02-14

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