JP2002075973A - 半導体処理中のガスの利用効率を向上させるための方法及び装置 - Google Patents

半導体処理中のガスの利用効率を向上させるための方法及び装置

Info

Publication number
JP2002075973A
JP2002075973A JP2001174595A JP2001174595A JP2002075973A JP 2002075973 A JP2002075973 A JP 2002075973A JP 2001174595 A JP2001174595 A JP 2001174595A JP 2001174595 A JP2001174595 A JP 2001174595A JP 2002075973 A JP2002075973 A JP 2002075973A
Authority
JP
Japan
Prior art keywords
processing chamber
gas
chamber
processing
pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001174595A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002075973A5 (https=
Inventor
Sebastien Raoux
ラオウクス セバスチャン
Tsutomu Tanaka
タナカ ツトム
Thomas Nowak
ノワック トーマス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2002075973A publication Critical patent/JP2002075973A/ja
Publication of JP2002075973A5 publication Critical patent/JP2002075973A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45593—Recirculation of reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
JP2001174595A 2000-06-13 2001-06-08 半導体処理中のガスの利用効率を向上させるための方法及び装置 Pending JP2002075973A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59372900A 2000-06-13 2000-06-13
US09/593729 2000-06-13

Publications (2)

Publication Number Publication Date
JP2002075973A true JP2002075973A (ja) 2002-03-15
JP2002075973A5 JP2002075973A5 (https=) 2008-07-24

Family

ID=24375904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001174595A Pending JP2002075973A (ja) 2000-06-13 2001-06-08 半導体処理中のガスの利用効率を向上させるための方法及び装置

Country Status (4)

Country Link
EP (1) EP1164628A2 (https=)
JP (1) JP2002075973A (https=)
KR (1) KR100830246B1 (https=)
TW (1) TW516076B (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005001920A1 (ja) * 2003-06-27 2005-01-06 Tokyo Electron Limited プラズマ発生方法、クリーニング方法および基板処理方法
JP2005019853A (ja) * 2003-06-27 2005-01-20 Tokyo Electron Ltd プラズマクリーニング方法および基板処理方法
JP2005019852A (ja) * 2003-06-27 2005-01-20 Tokyo Electron Ltd プラズマ発生方法、クリーニング方法、基板処理方法
JP2005197667A (ja) * 2003-12-09 2005-07-21 Alcatel プロセスチャンバに洗浄剤流量を生成しかつ制御する装置
JP2007142299A (ja) * 2005-11-22 2007-06-07 Ran Technical Service Kk 光ｃｖｄ装置及びｃｖｄ膜の製造方法
JP2013544433A (ja) * 2010-11-07 2013-12-12 セントフェクス リミターダ エ コマンディータ パターニングされた基板の製造装置
KR20170006278A (ko) * 2015-07-07 2017-01-17 도쿄엘렉트론가부시키가이샤 에칭 방법
CN110894599A (zh) * 2018-09-13 2020-03-20 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法
US12131910B2 (en) 2021-02-25 2024-10-29 Kioxia Corporation Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6863019B2 (en) * 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
JP2003017416A (ja) * 2001-07-03 2003-01-17 Tokyo Electron Ltd 処理システム及び処理方法
JP3527914B2 (ja) * 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
JP3527915B2 (ja) 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
US6955707B2 (en) * 2002-06-10 2005-10-18 The Boc Group, Inc. Method of recycling fluorine using an adsorption purification process
US20060054183A1 (en) * 2004-08-27 2006-03-16 Thomas Nowak Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
TWI385272B (zh) * 2009-09-25 2013-02-11 Ind Tech Res Inst 氣體分佈板及其裝置
US12334332B2 (en) 2012-06-12 2025-06-17 Lam Research Corporation Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US20180347035A1 (en) 2012-06-12 2018-12-06 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
TWI693295B (zh) * 2015-02-06 2020-05-11 美商諾發系統有限公司 碳化矽膜之保形沉積
US11848199B2 (en) 2018-10-19 2023-12-19 Lam Research Corporation Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill
CN111370286B (zh) * 2020-03-24 2023-02-07 中国科学院近代物理研究所 一种用于治疗装备的等离子体源及其使用方法
US20210391156A1 (en) 2020-06-10 2021-12-16 Applied Materials, Inc. Clean unit for chamber exhaust cleaning
KR102914557B1 (ko) * 2021-04-16 2026-01-19 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

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JPH06252095A (ja) * 1993-02-23 1994-09-09 Hitachi Ltd エッチング方法及び装置
JPH09251981A (ja) * 1996-03-14 1997-09-22 Toshiba Corp 半導体製造装置
JPH10125657A (ja) * 1996-10-16 1998-05-15 Ebara Corp 真空排気装置
JPH10199874A (ja) * 1997-01-14 1998-07-31 Applied Komatsu Technol Kk リモートプラズマ源清浄技術を用いた窒化ケイ素堆積中の白色粉末低減用の装置および方法
JPH11156103A (ja) * 1997-11-21 1999-06-15 Toshiba Microelectronics Corp 排ガス処理システム

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US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
EP1055249A1 (en) * 1998-02-09 2000-11-29 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252095A (ja) * 1993-02-23 1994-09-09 Hitachi Ltd エッチング方法及び装置
JPH09251981A (ja) * 1996-03-14 1997-09-22 Toshiba Corp 半導体製造装置
JPH10125657A (ja) * 1996-10-16 1998-05-15 Ebara Corp 真空排気装置
JPH10199874A (ja) * 1997-01-14 1998-07-31 Applied Komatsu Technol Kk リモートプラズマ源清浄技術を用いた窒化ケイ素堆積中の白色粉末低減用の装置および方法
JPH11156103A (ja) * 1997-11-21 1999-06-15 Toshiba Microelectronics Corp 排ガス処理システム

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100433273C (zh) * 2003-06-27 2008-11-12 东京毅力科创株式会社 等离子产生方法、清洗方法以及衬底处理方法
JP2005019853A (ja) * 2003-06-27 2005-01-20 Tokyo Electron Ltd プラズマクリーニング方法および基板処理方法
JP2005019852A (ja) * 2003-06-27 2005-01-20 Tokyo Electron Ltd プラズマ発生方法、クリーニング方法、基板処理方法
WO2005001920A1 (ja) * 2003-06-27 2005-01-06 Tokyo Electron Limited プラズマ発生方法、クリーニング方法および基板処理方法
US8574448B2 (en) 2003-06-27 2013-11-05 Tokyo Electron Limited Plasma generation method, cleaning method, and substrate processing method
JP2005197667A (ja) * 2003-12-09 2005-07-21 Alcatel プロセスチャンバに洗浄剤流量を生成しかつ制御する装置
JP2007142299A (ja) * 2005-11-22 2007-06-07 Ran Technical Service Kk 光ｃｖｄ装置及びｃｖｄ膜の製造方法
JP2013544433A (ja) * 2010-11-07 2013-12-12 セントフェクス リミターダ エ コマンディータ パターニングされた基板の製造装置
KR20170006278A (ko) * 2015-07-07 2017-01-17 도쿄엘렉트론가부시키가이샤 에칭 방법
JP2017022154A (ja) * 2015-07-07 2017-01-26 東京エレクトロン株式会社 エッチング方法
US10541147B2 (en) 2015-07-07 2020-01-21 Tokyo Electron Limited Etching method
KR102589406B1 (ko) 2015-07-07 2023-10-13 도쿄엘렉트론가부시키가이샤 에칭 방법
CN110894599A (zh) * 2018-09-13 2020-03-20 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法
CN110894599B (zh) * 2018-09-13 2022-02-11 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法
US12131910B2 (en) 2021-02-25 2024-10-29 Kioxia Corporation Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
KR100830246B1 (ko) 2008-05-16
TW516076B (en) 2003-01-01
KR20010112652A (ko) 2001-12-20
EP1164628A2 (en) 2001-12-19

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