KR100830246B1 - 반도체 프로세싱의 동안 가스들의 사용 효율을 증가시키기위한 장치와 방법들 - Google Patents

반도체 프로세싱의 동안 가스들의 사용 효율을 증가시키기위한 장치와 방법들 Download PDF

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KR100830246B1
KR100830246B1 KR1020010033149A KR20010033149A KR100830246B1 KR 100830246 B1 KR100830246 B1 KR 100830246B1 KR 1020010033149 A KR1020010033149 A KR 1020010033149A KR 20010033149 A KR20010033149 A KR 20010033149A KR 100830246 B1 KR100830246 B1 KR 100830246B1
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processing chamber
chamber
gas
processing
pump
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KR20010112652A (ko
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세바스찬 라욱스
츠토무(톰) 다나까
토마스 노왁
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45593—Recirculation of reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
KR1020010033149A 2000-06-13 2001-06-13 반도체 프로세싱의 동안 가스들의 사용 효율을 증가시키기위한 장치와 방법들 Expired - Fee Related KR100830246B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59372900A 2000-06-13 2000-06-13
US09/593,729 2000-06-13

Publications (2)

Publication Number Publication Date
KR20010112652A KR20010112652A (ko) 2001-12-20
KR100830246B1 true KR100830246B1 (ko) 2008-05-16

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KR1020010033149A Expired - Fee Related KR100830246B1 (ko) 2000-06-13 2001-06-13 반도체 프로세싱의 동안 가스들의 사용 효율을 증가시키기위한 장치와 방법들

Country Status (4)

Country Link
EP (1) EP1164628A2 (https=)
JP (1) JP2002075973A (https=)
KR (1) KR100830246B1 (https=)
TW (1) TW516076B (https=)

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US6863019B2 (en) * 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
JP2003017416A (ja) * 2001-07-03 2003-01-17 Tokyo Electron Ltd 処理システム及び処理方法
JP3527914B2 (ja) * 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
JP3527915B2 (ja) 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
US6955707B2 (en) * 2002-06-10 2005-10-18 The Boc Group, Inc. Method of recycling fluorine using an adsorption purification process
JP4558284B2 (ja) * 2003-06-27 2010-10-06 東京エレクトロン株式会社 プラズマ発生方法、クリーニング方法、基板処理方法、およびプラズマ発生装置
JP4558285B2 (ja) * 2003-06-27 2010-10-06 東京エレクトロン株式会社 プラズマクリーニング方法および基板処理方法
WO2005001920A1 (ja) 2003-06-27 2005-01-06 Tokyo Electron Limited プラズマ発生方法、クリーニング方法および基板処理方法
FR2863404B1 (fr) * 2003-12-09 2006-04-21 Cit Alcatel Dispositif pour la generation et la commande du flux d'agents de nettoyage dans une chambre de procedes
US20060054183A1 (en) * 2004-08-27 2006-03-16 Thomas Nowak Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
JP2007142299A (ja) * 2005-11-22 2007-06-07 Ran Technical Service Kk 光ｃｖｄ装置及びｃｖｄ膜の製造方法
TWI385272B (zh) * 2009-09-25 2013-02-11 Ind Tech Res Inst 氣體分佈板及其裝置
DE202010015018U1 (de) * 2010-11-07 2011-04-14 Bohnet, Hans Anordnung zur Herstellung von strukturierten Substraten
US12334332B2 (en) 2012-06-12 2025-06-17 Lam Research Corporation Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US20180347035A1 (en) 2012-06-12 2018-12-06 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
TWI693295B (zh) * 2015-02-06 2020-05-11 美商諾發系統有限公司 碳化矽膜之保形沉積
JP6578145B2 (ja) * 2015-07-07 2019-09-18 東京エレクトロン株式会社 エッチング方法
CN110894599B (zh) * 2018-09-13 2022-02-11 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法
US11848199B2 (en) 2018-10-19 2023-12-19 Lam Research Corporation Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill
CN111370286B (zh) * 2020-03-24 2023-02-07 中国科学院近代物理研究所 一种用于治疗装备的等离子体源及其使用方法
US20210391156A1 (en) 2020-06-10 2021-12-16 Applied Materials, Inc. Clean unit for chamber exhaust cleaning
JP7513547B2 (ja) 2021-02-25 2024-07-09 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
KR102914557B1 (ko) * 2021-04-16 2026-01-19 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

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WO1999040609A1 (en) * 1998-02-09 1999-08-12 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density

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JP3206185B2 (ja) * 1993-02-23 2001-09-04 株式会社日立製作所 エッチング方法
JPH09251981A (ja) * 1996-03-14 1997-09-22 Toshiba Corp 半導体製造装置
JP3695865B2 (ja) * 1996-10-16 2005-09-14 株式会社荏原製作所 真空排気装置
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
JPH11156103A (ja) * 1997-11-21 1999-06-15 Toshiba Microelectronics Corp 排ガス処理システム

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US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
WO1999040609A1 (en) * 1998-02-09 1999-08-12 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density

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JP2002075973A (ja) 2002-03-15
TW516076B (en) 2003-01-01
KR20010112652A (ko) 2001-12-20
EP1164628A2 (en) 2001-12-19

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