JP2002075973A5 - - Google Patents

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Publication number
JP2002075973A5
JP2002075973A5 JP2001174595A JP2001174595A JP2002075973A5 JP 2002075973 A5 JP2002075973 A5 JP 2002075973A5 JP 2001174595 A JP2001174595 A JP 2001174595A JP 2001174595 A JP2001174595 A JP 2001174595A JP 2002075973 A5 JP2002075973 A5 JP 2002075973A5
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JP
Japan
Prior art keywords
processing chamber
gas
processing
chamber
pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001174595A
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English (en)
Japanese (ja)
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JP2002075973A (ja
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Publication date
Application filed filed Critical
Publication of JP2002075973A publication Critical patent/JP2002075973A/ja
Publication of JP2002075973A5 publication Critical patent/JP2002075973A5/ja
Pending legal-status Critical Current

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JP2001174595A 2000-06-13 2001-06-08 半導体処理中のガスの利用効率を向上させるための方法及び装置 Pending JP2002075973A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59372900A 2000-06-13 2000-06-13
US09/593729 2000-06-13

Publications (2)

Publication Number Publication Date
JP2002075973A JP2002075973A (ja) 2002-03-15
JP2002075973A5 true JP2002075973A5 (https=) 2008-07-24

Family

ID=24375904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001174595A Pending JP2002075973A (ja) 2000-06-13 2001-06-08 半導体処理中のガスの利用効率を向上させるための方法及び装置

Country Status (4)

Country Link
EP (1) EP1164628A2 (https=)
JP (1) JP2002075973A (https=)
KR (1) KR100830246B1 (https=)
TW (1) TW516076B (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6863019B2 (en) * 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
JP2003017416A (ja) * 2001-07-03 2003-01-17 Tokyo Electron Ltd 処理システム及び処理方法
JP3527914B2 (ja) * 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
JP3527915B2 (ja) 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
US6955707B2 (en) * 2002-06-10 2005-10-18 The Boc Group, Inc. Method of recycling fluorine using an adsorption purification process
JP4558284B2 (ja) * 2003-06-27 2010-10-06 東京エレクトロン株式会社 プラズマ発生方法、クリーニング方法、基板処理方法、およびプラズマ発生装置
JP4558285B2 (ja) * 2003-06-27 2010-10-06 東京エレクトロン株式会社 プラズマクリーニング方法および基板処理方法
WO2005001920A1 (ja) 2003-06-27 2005-01-06 Tokyo Electron Limited プラズマ発生方法、クリーニング方法および基板処理方法
FR2863404B1 (fr) * 2003-12-09 2006-04-21 Cit Alcatel Dispositif pour la generation et la commande du flux d'agents de nettoyage dans une chambre de procedes
US20060054183A1 (en) * 2004-08-27 2006-03-16 Thomas Nowak Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
JP2007142299A (ja) * 2005-11-22 2007-06-07 Ran Technical Service Kk 光ｃｖｄ装置及びｃｖｄ膜の製造方法
TWI385272B (zh) * 2009-09-25 2013-02-11 Ind Tech Res Inst 氣體分佈板及其裝置
DE202010015018U1 (de) * 2010-11-07 2011-04-14 Bohnet, Hans Anordnung zur Herstellung von strukturierten Substraten
US12334332B2 (en) 2012-06-12 2025-06-17 Lam Research Corporation Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US20180347035A1 (en) 2012-06-12 2018-12-06 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
TWI693295B (zh) * 2015-02-06 2020-05-11 美商諾發系統有限公司 碳化矽膜之保形沉積
JP6578145B2 (ja) * 2015-07-07 2019-09-18 東京エレクトロン株式会社 エッチング方法
CN110894599B (zh) * 2018-09-13 2022-02-11 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法
US11848199B2 (en) 2018-10-19 2023-12-19 Lam Research Corporation Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill
CN111370286B (zh) * 2020-03-24 2023-02-07 中国科学院近代物理研究所 一种用于治疗装备的等离子体源及其使用方法
US20210391156A1 (en) 2020-06-10 2021-12-16 Applied Materials, Inc. Clean unit for chamber exhaust cleaning
JP7513547B2 (ja) 2021-02-25 2024-07-09 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
KR102914557B1 (ko) * 2021-04-16 2026-01-19 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3206185B2 (ja) * 1993-02-23 2001-09-04 株式会社日立製作所 エッチング方法
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
JPH09251981A (ja) * 1996-03-14 1997-09-22 Toshiba Corp 半導体製造装置
JP3695865B2 (ja) * 1996-10-16 2005-09-14 株式会社荏原製作所 真空排気装置
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
JPH11156103A (ja) * 1997-11-21 1999-06-15 Toshiba Microelectronics Corp 排ガス処理システム
EP1055249A1 (en) * 1998-02-09 2000-11-29 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density

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