WO2002025696A3 - Reducing deposition of process residues on a surface in a chamber - Google Patents
Reducing deposition of process residues on a surface in a chamber Download PDFInfo
- Publication number
- WO2002025696A3 WO2002025696A3 PCT/US2001/029802 US0129802W WO0225696A3 WO 2002025696 A3 WO2002025696 A3 WO 2002025696A3 US 0129802 W US0129802 W US 0129802W WO 0225696 A3 WO0225696 A3 WO 0225696A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chamber
- process residues
- reducing deposition
- substrate
- monitoring
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-7004166A KR20030038763A (en) | 2000-09-21 | 2001-09-21 | Reducing deposition of process residues on a surface in a chamber |
JP2002529809A JP2004526293A (en) | 2000-09-21 | 2001-09-21 | Apparatus and method for reducing process residue deposition on surfaces in a chamber |
EP01975321A EP1320867A2 (en) | 2000-09-21 | 2001-09-21 | Reducing deposition of process residues on a surface in a chamber |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/667,362 | 2000-09-21 | ||
US09/667,362 US6835275B1 (en) | 1998-06-11 | 2000-09-21 | Reducing deposition of process residues on a surface in a chamber |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2002025696A2 WO2002025696A2 (en) | 2002-03-28 |
WO2002025696A3 true WO2002025696A3 (en) | 2002-08-15 |
WO2002025696A9 WO2002025696A9 (en) | 2003-03-27 |
Family
ID=24677916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/029802 WO2002025696A2 (en) | 2000-09-21 | 2001-09-21 | Reducing deposition of process residues on a surface in a chamber |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1320867A2 (en) |
JP (1) | JP2004526293A (en) |
KR (1) | KR20030038763A (en) |
WO (1) | WO2002025696A2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6939811B2 (en) * | 2002-09-25 | 2005-09-06 | Lam Research Corporation | Apparatus and method for controlling etch depth |
WO2005029538A2 (en) * | 2003-09-22 | 2005-03-31 | Seok Kyun Song | A plasma generating apparatus and an alignment process for liquid crystal displays using the apparatus |
JP4502116B2 (en) * | 2004-03-31 | 2010-07-14 | 冨士ダイス株式会社 | High density plasma surface coating method and apparatus |
JP4860336B2 (en) * | 2006-04-24 | 2012-01-25 | バキュームプロダクツ株式会社 | Vacuum processing equipment |
JP2012072725A (en) * | 2010-09-29 | 2012-04-12 | Kyocera Corp | Structure for internal combustion engine, internal combustion engine with position detection mechanism and internal combustion engine with liquid state detection mechanism |
JP5773731B2 (en) * | 2011-05-02 | 2015-09-02 | 株式会社アルバック | Vacuum processing equipment |
US10971369B2 (en) | 2018-01-31 | 2021-04-06 | Hitachi High-Tech Corporation | Plasma processing method and plasma processing apparatus |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5322590A (en) * | 1991-03-24 | 1994-06-21 | Tokyo Electron Limited | Plasma-process system with improved end-point detecting scheme |
US5759424A (en) * | 1994-03-24 | 1998-06-02 | Hitachi, Ltd. | Plasma processing apparatus and processing method |
JPH11176815A (en) * | 1997-12-15 | 1999-07-02 | Ricoh Co Ltd | End point judging method of dry etching and dry etching equipment |
WO1999065056A1 (en) * | 1998-06-11 | 1999-12-16 | Applied Materials, Inc. | Chamber having improved process monitoring window |
-
2001
- 2001-09-21 KR KR10-2003-7004166A patent/KR20030038763A/en not_active Application Discontinuation
- 2001-09-21 JP JP2002529809A patent/JP2004526293A/en not_active Withdrawn
- 2001-09-21 WO PCT/US2001/029802 patent/WO2002025696A2/en not_active Application Discontinuation
- 2001-09-21 EP EP01975321A patent/EP1320867A2/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5322590A (en) * | 1991-03-24 | 1994-06-21 | Tokyo Electron Limited | Plasma-process system with improved end-point detecting scheme |
US5759424A (en) * | 1994-03-24 | 1998-06-02 | Hitachi, Ltd. | Plasma processing apparatus and processing method |
JPH11176815A (en) * | 1997-12-15 | 1999-07-02 | Ricoh Co Ltd | End point judging method of dry etching and dry etching equipment |
US6207008B1 (en) * | 1997-12-15 | 2001-03-27 | Ricoh Company, Ltd. | Dry etching endpoint detection system |
WO1999065056A1 (en) * | 1998-06-11 | 1999-12-16 | Applied Materials, Inc. | Chamber having improved process monitoring window |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 12 29 October 1999 (1999-10-29) * |
Also Published As
Publication number | Publication date |
---|---|
EP1320867A2 (en) | 2003-06-25 |
WO2002025696A2 (en) | 2002-03-28 |
WO2002025696A9 (en) | 2003-03-27 |
JP2004526293A (en) | 2004-08-26 |
KR20030038763A (en) | 2003-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1170777A3 (en) | Multi-purpose processing chamber with removable chamber liner | |
WO2000065631A3 (en) | Apparatus and method for exposing a substrate to plasma radicals | |
EP0838838A3 (en) | Apparatus and method of producing an electronic device | |
TW345679B (en) | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment | |
GB9616225D0 (en) | Method of surface treatment of semiconductor substrates | |
EP1390558A4 (en) | Penning discharge plasma source | |
CA2406430A1 (en) | Method for removing metal cladding from airfoil substrate | |
TW364164B (en) | CVD film forming method comprising post treatment after cleaning | |
DE69835032D1 (en) | IMPROVED METHOD TO EAT AN OXIDE LAYER | |
EP0363982A3 (en) | Dry etching method | |
EP1227172A3 (en) | Method of reducing plasma charge damage for plasma processes | |
TW348271B (en) | Low pressure and low power Cl2/HCl process for sub-micron metal etching | |
WO2004030013A3 (en) | Baffle plate in a plasma processing system | |
WO2004030020A3 (en) | Upper electrode plate with deposition shield in a plasma processing system | |
WO2001078101A3 (en) | Method and apparatus for plasma processing | |
WO2002090701A3 (en) | Barrier device and method for building barrier wall | |
AU5169699A (en) | Method and device for surface processing with plasma at atmospheric pressure | |
EP1158565A3 (en) | Toroidal plasma source for plasma processing | |
WO2006091588A3 (en) | Etching chamber with subchamber | |
EP1260637A4 (en) | Construction machine | |
WO2002023611A3 (en) | Integration of silicon etch and chamber cleaning processes | |
WO2005009089A3 (en) | Plasma processing apparatus | |
ATE458261T1 (en) | PLASMA TREATMENT DEVICE | |
WO2002025696A3 (en) | Reducing deposition of process residues on a surface in a chamber | |
WO2004109772A3 (en) | Method and system for etching a high-k dielectric material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): JP KR |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2002529809 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020037004166 Country of ref document: KR |
|
COP | Corrected version of pamphlet |
Free format text: PAGES 1/9-9/9, DRAWINGS, REPLACED BY NEW PAGES 1/16-16/16; DUE TO LATE TRANSMITTAL BY THE RECEIVINGOFFICE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2001975321 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020037004166 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2001975321 Country of ref document: EP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2001975321 Country of ref document: EP |