JP2002075783A5 - - Google Patents

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Publication number
JP2002075783A5
JP2002075783A5 JP2000256405A JP2000256405A JP2002075783A5 JP 2002075783 A5 JP2002075783 A5 JP 2002075783A5 JP 2000256405 A JP2000256405 A JP 2000256405A JP 2000256405 A JP2000256405 A JP 2000256405A JP 2002075783 A5 JP2002075783 A5 JP 2002075783A5
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JP
Japan
Prior art keywords
dielectric
oxide
temperature coefficient
dielectric layer
stacked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000256405A
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English (en)
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JP2002075783A (ja
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Publication date
Application filed filed Critical
Priority to JP2000256405A priority Critical patent/JP2002075783A/ja
Priority claimed from JP2000256405A external-priority patent/JP2002075783A/ja
Priority to EP01306733A priority patent/EP1182696A3/en
Priority to CNB011239670A priority patent/CN1197103C/zh
Priority to KR10-2001-0048689A priority patent/KR100450101B1/ko
Priority to US09/930,862 priority patent/US6477036B2/en
Publication of JP2002075783A publication Critical patent/JP2002075783A/ja
Publication of JP2002075783A5 publication Critical patent/JP2002075783A5/ja
Withdrawn legal-status Critical Current

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Description

【０００２】
【従来の技術】
薄膜コンデンサとは一般に、基板上に下部電極、誘電体層、上部電極を積層してなる構造とされ、場合によっては下部電極としての機能を有する半導体基板の上に誘電体層と上部電極層を順次積層してなる構造とされている。
この種の薄膜コンデンサにおいては、誘電体層の比誘電率およびＱが大きく、かつ、共振周波数の温度係数においては０を中心として正または負の任意の温度係数が得られることが望まれている。
従来、このような特性を有する誘電体組成物として、例えば、特開昭６０−１２４３０３号公報に開示されたものが知られている。この特許公報に開示された誘電体組成物は、ＢａＯ-ＴｉＯ２系の誘電体に酸化サマリウム（Ｓｍ２Ｏ３）、酸化ガドリウム（Ｇｄ２Ｏ３）、酸化ジスプロシウム（Ｄｙ２Ｏ３）、酸化ユーロピウム（Ｅｕ２Ｏ３）等を添加して焼成してなるものであった。しかしながらこの種従来の誘電体磁器組成物を得るための技術にあっては、比誘電率εｒは６１〜７２、温度係数τは−２４〜３１ｐｐｍ／℃の範囲内でしか制御することができなかった。
JP2000256405A 2000-08-25 2000-08-25 温度補償用薄膜コンデンサ Withdrawn JP2002075783A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000256405A JP2002075783A (ja) 2000-08-25 2000-08-25 温度補償用薄膜コンデンサ
EP01306733A EP1182696A3 (en) 2000-08-25 2001-08-07 Temperature compensating thinfilm capacitor
CNB011239670A CN1197103C (zh) 2000-08-25 2001-08-09 温度补偿用薄膜电容器
KR10-2001-0048689A KR100450101B1 (ko) 2000-08-25 2001-08-13 온도 보상용 박막 콘덴서
US09/930,862 US6477036B2 (en) 2000-08-25 2001-08-16 Temperature compensating thin-film capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000256405A JP2002075783A (ja) 2000-08-25 2000-08-25 温度補償用薄膜コンデンサ

Publications (2)

Publication Number Publication Date
JP2002075783A JP2002075783A (ja) 2002-03-15
JP2002075783A5 true JP2002075783A5 (ja) 2004-09-09

Family

ID=18745021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000256405A Withdrawn JP2002075783A (ja) 2000-08-25 2000-08-25 温度補償用薄膜コンデンサ

Country Status (5)

Country Link
US (1) US6477036B2 (ja)
EP (1) EP1182696A3 (ja)
JP (1) JP2002075783A (ja)
KR (1) KR100450101B1 (ja)
CN (1) CN1197103C (ja)

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US7375412B1 (en) 2005-03-31 2008-05-20 Intel Corporation iTFC with optimized C(T)
US7288459B2 (en) * 2005-03-31 2007-10-30 Intel Corporation Organic substrates with integral thin-film capacitors, methods of making same, and systems containing same
US7629269B2 (en) * 2005-03-31 2009-12-08 Intel Corporation High-k thin film grain size control
US7453144B2 (en) * 2005-06-29 2008-11-18 Intel Corporation Thin film capacitors and methods of making the same
JP2010192466A (ja) * 2007-04-27 2010-09-02 Nec Corp 広帯域容量素子
KR101420773B1 (ko) * 2009-07-15 2014-07-17 주성엔지니어링(주) 전기광학소자 및 이의 제작 방법
JP5120406B2 (ja) * 2010-03-31 2013-01-16 Ｔｄｋ株式会社 セラミック電子部品及びセラミック電子部品の製造方法
WO2013009772A1 (en) 2011-07-11 2013-01-17 Quantumscape Corporation Solid state energy storage devices
US9087645B2 (en) * 2012-01-30 2015-07-21 QuantrumScape Corporation Solid state energy storage devices
JP5441020B1 (ja) * 2012-08-29 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP5936087B2 (ja) * 2014-10-07 2016-06-15 国立大学法人 岡山大学 薄膜型水素ガスセンサ
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