JP2002064154A5 - - Google Patents

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Publication number
JP2002064154A5
JP2002064154A5 JP2000246505A JP2000246505A JP2002064154A5 JP 2002064154 A5 JP2002064154 A5 JP 2002064154A5 JP 2000246505 A JP2000246505 A JP 2000246505A JP 2000246505 A JP2000246505 A JP 2000246505A JP 2002064154 A5 JP2002064154 A5 JP 2002064154A5
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JP
Japan
Prior art keywords
region
forming
angle
channel type
type misfet
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Application number
JP2000246505A
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English (en)
Japanese (ja)
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JP4044721B2 (ja
JP2002064154A (ja
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Application filed filed Critical
Priority to JP2000246505A priority Critical patent/JP4044721B2/ja
Priority claimed from JP2000246505A external-priority patent/JP4044721B2/ja
Priority to TW090116166A priority patent/TW497253B/zh
Priority to KR1020010048954A priority patent/KR100547050B1/ko
Priority to US09/929,259 priority patent/US6613634B2/en
Publication of JP2002064154A publication Critical patent/JP2002064154A/ja
Publication of JP2002064154A5 publication Critical patent/JP2002064154A5/ja
Application granted granted Critical
Publication of JP4044721B2 publication Critical patent/JP4044721B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000246505A 2000-08-15 2000-08-15 半導体集積回路装置の製造方法 Expired - Fee Related JP4044721B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000246505A JP4044721B2 (ja) 2000-08-15 2000-08-15 半導体集積回路装置の製造方法
TW090116166A TW497253B (en) 2000-08-15 2001-07-02 Semiconductor integrated circuit device and its manufacturing method
KR1020010048954A KR100547050B1 (ko) 2000-08-15 2001-08-14 반도체 집적 회로 장치의 제조 방법
US09/929,259 US6613634B2 (en) 2000-08-15 2001-08-15 Method of manufacturing a semiconductor device using oblique ion injection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000246505A JP4044721B2 (ja) 2000-08-15 2000-08-15 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002064154A JP2002064154A (ja) 2002-02-28
JP2002064154A5 true JP2002064154A5 (enExample) 2005-02-03
JP4044721B2 JP4044721B2 (ja) 2008-02-06

Family

ID=18736803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000246505A Expired - Fee Related JP4044721B2 (ja) 2000-08-15 2000-08-15 半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (1) US6613634B2 (enExample)
JP (1) JP4044721B2 (enExample)
KR (1) KR100547050B1 (enExample)
TW (1) TW497253B (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756276B1 (en) * 2002-09-30 2004-06-29 Advanced Micro Devices, Inc. Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication
KR100604911B1 (ko) 2004-10-20 2006-07-28 삼성전자주식회사 하부전극 콘택을 갖는 반도체 메모리 소자 및 그 제조방법
US20070148893A1 (en) * 2005-12-22 2007-06-28 Andrei Josiek Method of forming a doped semiconductor portion
JP4812480B2 (ja) * 2006-03-22 2011-11-09 富士通セミコンダクター株式会社 半導体装置の製造方法
US8305829B2 (en) * 2009-02-23 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Memory power gating circuit for controlling internal voltage of a memory array, system and method for controlling the same
US8305790B2 (en) * 2009-03-16 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical anti-fuse and related applications
US8957482B2 (en) 2009-03-31 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse and related applications
US8912602B2 (en) 2009-04-14 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods for forming the same
US8461015B2 (en) 2009-07-08 2013-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. STI structure and method of forming bottom void in same
US8482073B2 (en) 2010-03-25 2013-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit including FINFETs and methods for forming the same
US8440517B2 (en) 2010-10-13 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of fabricating the same
US8759943B2 (en) 2010-10-08 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having notched fin structure and method of making the same
US8629478B2 (en) 2009-07-31 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure for high mobility multiple-gate transistor
US8298925B2 (en) 2010-11-08 2012-10-30 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming ultra shallow junction
US8472227B2 (en) 2010-01-27 2013-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits and methods for forming the same
US8980719B2 (en) 2010-04-28 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for doping fin field-effect transistors
US8264021B2 (en) * 2009-10-01 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Finfets and methods for forming the same
US8497528B2 (en) 2010-05-06 2013-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a strained structure
US9484462B2 (en) 2009-09-24 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure of fin field effect transistor
US8623728B2 (en) 2009-07-28 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high germanium concentration SiGe stressor
US8187928B2 (en) 2010-09-21 2012-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming integrated circuits
US8264032B2 (en) 2009-09-01 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Accumulation type FinFET, circuits and fabrication method thereof
US20110097867A1 (en) * 2009-10-22 2011-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of controlling gate thicknesses in forming fusi gates
US9040393B2 (en) 2010-01-14 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor structure
US8603924B2 (en) 2010-10-19 2013-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming gate dielectric material
US9048181B2 (en) 2010-11-08 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming ultra shallow junction
US8769446B2 (en) 2010-11-12 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for increasing fin device density for unaligned fins
US8592915B2 (en) 2011-01-25 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Doped oxide for shallow trench isolation (STI)
US8877602B2 (en) 2011-01-25 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms of doping oxide for forming shallow trench isolation
US8580675B2 (en) * 2011-03-02 2013-11-12 Texas Instruments Incorporated Two-track cross-connect in double-patterned structure using rectangular via
US8431453B2 (en) 2011-03-31 2013-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
WO2013018156A1 (ja) * 2011-07-29 2013-02-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TWI430449B (zh) * 2011-09-29 2014-03-11 Anpec Electronics Corp 橫向堆疊式超級接面功率半導體元件
US10032674B2 (en) * 2015-12-07 2018-07-24 International Business Machines Corporation Middle of the line subtractive self-aligned contacts

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372957A (en) * 1993-07-22 1994-12-13 Taiwan Semiconductor Manufacturing Company Multiple tilted angle ion implantation MOSFET method
JP4198201B2 (ja) * 1995-06-02 2008-12-17 株式会社ルネサステクノロジ 半導体装置
US5534449A (en) * 1995-07-17 1996-07-09 Micron Technology, Inc. Methods of forming complementary metal oxide semiconductor (CMOS) integrated circuitry
JP3535615B2 (ja) 1995-07-18 2004-06-07 株式会社ルネサステクノロジ 半導体集積回路装置
JPH0955440A (ja) 1995-08-17 1997-02-25 Sony Corp 半導体装置及び半導体装置の製造方法
JPH09129753A (ja) 1995-11-01 1997-05-16 Sony Corp 半導体装置
KR19990052693A (ko) * 1997-12-23 1999-07-15 구본준 플래쉬 메모리 셀의 제조방법
JP2000040749A (ja) * 1998-07-24 2000-02-08 Matsushita Electronics Industry Corp 半導体装置の製造方法
JP3239853B2 (ja) * 1998-08-25 2001-12-17 日本電気株式会社 半導体装置の製造方法
KR100431324B1 (ko) * 1998-09-29 2004-06-16 주식회사 하이닉스반도체 반도체장치의 제조방법

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