JP2002016001A5 - - Google Patents
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- Publication number
- JP2002016001A5 JP2002016001A5 JP2000193355A JP2000193355A JP2002016001A5 JP 2002016001 A5 JP2002016001 A5 JP 2002016001A5 JP 2000193355 A JP2000193355 A JP 2000193355A JP 2000193355 A JP2000193355 A JP 2000193355A JP 2002016001 A5 JP2002016001 A5 JP 2002016001A5
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- nitride semiconductor
- substrate
- growing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001681 protective effect Effects 0.000 description 23
- 150000004767 nitrides Chemical class 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 19
- 239000000758 substrate Substances 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 238000005422 blasting Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000193355A JP4232326B2 (ja) | 2000-06-27 | 2000-06-27 | 低欠陥窒化物半導体の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000193355A JP4232326B2 (ja) | 2000-06-27 | 2000-06-27 | 低欠陥窒化物半導体の成長方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002016001A JP2002016001A (ja) | 2002-01-18 |
| JP2002016001A5 true JP2002016001A5 (enExample) | 2007-08-09 |
| JP4232326B2 JP4232326B2 (ja) | 2009-03-04 |
Family
ID=18692361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000193355A Expired - Fee Related JP4232326B2 (ja) | 2000-06-27 | 2000-06-27 | 低欠陥窒化物半導体の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4232326B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101119019B1 (ko) * | 2004-12-14 | 2012-03-12 | 주식회사 엘지실트론 | 질화갈륨 반도체 및 이의 제조 방법 |
| US7646027B2 (en) | 2005-05-06 | 2010-01-12 | Showa Denko K.K. | Group III nitride semiconductor stacked structure |
| WO2013021606A1 (ja) * | 2011-08-09 | 2013-02-14 | パナソニック株式会社 | 窒化物半導体層成長用構造、積層構造、窒化物系半導体素子および光源ならびにこれらの製造方法 |
| KR102534248B1 (ko) | 2018-07-17 | 2023-05-18 | 삼성전자주식회사 | 발광 소자 패키지 |
-
2000
- 2000-06-27 JP JP2000193355A patent/JP4232326B2/ja not_active Expired - Fee Related
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