JP4232326B2 - 低欠陥窒化物半導体の成長方法 - Google Patents

低欠陥窒化物半導体の成長方法 Download PDF

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JP4232326B2
JP4232326B2 JP2000193355A JP2000193355A JP4232326B2 JP 4232326 B2 JP4232326 B2 JP 4232326B2 JP 2000193355 A JP2000193355 A JP 2000193355A JP 2000193355 A JP2000193355 A JP 2000193355A JP 4232326 B2 JP4232326 B2 JP 4232326B2
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nitride semiconductor
protective film
substrate
growing
grown
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JP2002016001A (ja
JP2002016001A5 (enExample
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裕之 清久
一幸 蝶々
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Nichia Corp
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Nichia Corp
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  • Crystals, And After-Treatments Of Crystals (AREA)
JP2000193355A 2000-06-27 2000-06-27 低欠陥窒化物半導体の成長方法 Expired - Fee Related JP4232326B2 (ja)

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JP2000193355A JP4232326B2 (ja) 2000-06-27 2000-06-27 低欠陥窒化物半導体の成長方法

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JP2000193355A JP4232326B2 (ja) 2000-06-27 2000-06-27 低欠陥窒化物半導体の成長方法

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JP2002016001A JP2002016001A (ja) 2002-01-18
JP2002016001A5 JP2002016001A5 (enExample) 2007-08-09
JP4232326B2 true JP4232326B2 (ja) 2009-03-04

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11217623B2 (en) 2018-07-17 2022-01-04 Samsung Electronics Co., Ltd. Light emitting device package

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101119019B1 (ko) * 2004-12-14 2012-03-12 주식회사 엘지실트론 질화갈륨 반도체 및 이의 제조 방법
US7646027B2 (en) 2005-05-06 2010-01-12 Showa Denko K.K. Group III nitride semiconductor stacked structure
WO2013021606A1 (ja) * 2011-08-09 2013-02-14 パナソニック株式会社 窒化物半導体層成長用構造、積層構造、窒化物系半導体素子および光源ならびにこれらの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11217623B2 (en) 2018-07-17 2022-01-04 Samsung Electronics Co., Ltd. Light emitting device package
US12295195B2 (en) 2018-07-17 2025-05-06 Samsung Electronics Co., Ltd. Light emitting device package with reliably formed switching unit

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