JP2001518703A - ピクセルのカラー応答度を変える遮光層の使用方法および装置 - Google Patents

ピクセルのカラー応答度を変える遮光層の使用方法および装置

Info

Publication number
JP2001518703A
JP2001518703A JP2000514306A JP2000514306A JP2001518703A JP 2001518703 A JP2001518703 A JP 2001518703A JP 2000514306 A JP2000514306 A JP 2000514306A JP 2000514306 A JP2000514306 A JP 2000514306A JP 2001518703 A JP2001518703 A JP 2001518703A
Authority
JP
Japan
Prior art keywords
color
pixel
responsivity
determining
relative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000514306A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001518703A5 (enExample
Inventor
ボーオレク，エドワード・ジェイ
クラーク，ローレンス・ティ
ベイリー，マーク・エイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of JP2001518703A publication Critical patent/JP2001518703A/ja
Publication of JP2001518703A5 publication Critical patent/JP2001518703A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/02—Details
    • H01J40/14—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Studio Devices (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2000514306A 1997-09-26 1998-07-13 ピクセルのカラー応答度を変える遮光層の使用方法および装置 Pending JP2001518703A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/937,631 1997-09-26
US08/937,631 US6057586A (en) 1997-09-26 1997-09-26 Method and apparatus for employing a light shield to modulate pixel color responsivity
PCT/US1998/014521 WO1999017337A1 (en) 1997-09-26 1998-07-13 Method and apparatus for employing a light shield to modulate pixel color responsivity

Publications (2)

Publication Number Publication Date
JP2001518703A true JP2001518703A (ja) 2001-10-16
JP2001518703A5 JP2001518703A5 (enExample) 2006-01-05

Family

ID=25470186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000514306A Pending JP2001518703A (ja) 1997-09-26 1998-07-13 ピクセルのカラー応答度を変える遮光層の使用方法および装置

Country Status (6)

Country Link
US (3) US6057586A (enExample)
EP (1) EP1018141A4 (enExample)
JP (1) JP2001518703A (enExample)
KR (1) KR100358862B1 (enExample)
AU (1) AU8401598A (enExample)
WO (1) WO1999017337A1 (enExample)

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JP2011138942A (ja) * 2009-12-28 2011-07-14 Oki Semiconductor Co Ltd 半導体素子及び半導体素子の製造方法

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US20040012029A1 (en) 2004-01-22
US6933168B2 (en) 2005-08-23
KR20010030728A (ko) 2001-04-16
EP1018141A1 (en) 2000-07-12
WO1999017337A1 (en) 1999-04-08
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