KR100358862B1 - 픽셀 칼라 응답도를 조절하기 위해 광 차폐층을 사용하기위한 방법 및 장치 - Google Patents

픽셀 칼라 응답도를 조절하기 위해 광 차폐층을 사용하기위한 방법 및 장치 Download PDF

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KR100358862B1
KR100358862B1 KR1020007003246A KR20007003246A KR100358862B1 KR 100358862 B1 KR100358862 B1 KR 100358862B1 KR 1020007003246 A KR1020007003246 A KR 1020007003246A KR 20007003246 A KR20007003246 A KR 20007003246A KR 100358862 B1 KR100358862 B1 KR 100358862B1
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color
response
pixel
light receiving
determining
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Korean (ko)
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KR20010030728A (ko
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바월렉에드워드제이
클락로렌스티
베일리마크에이
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인텔 코오퍼레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/02—Details
    • H01J40/14—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

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  • Solid State Image Pick-Up Elements (AREA)
  • Studio Devices (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Optical Elements Other Than Lenses (AREA)
KR1020007003246A 1997-09-26 1998-07-13 픽셀 칼라 응답도를 조절하기 위해 광 차폐층을 사용하기위한 방법 및 장치 Expired - Fee Related KR100358862B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8/937,631 1997-09-26
US08/937,631 1997-09-26
US08/937,631 US6057586A (en) 1997-09-26 1997-09-26 Method and apparatus for employing a light shield to modulate pixel color responsivity
PCT/US1998/014521 WO1999017337A1 (en) 1997-09-26 1998-07-13 Method and apparatus for employing a light shield to modulate pixel color responsivity

Publications (2)

Publication Number Publication Date
KR20010030728A KR20010030728A (ko) 2001-04-16
KR100358862B1 true KR100358862B1 (ko) 2002-10-31

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KR1020007003246A Expired - Fee Related KR100358862B1 (ko) 1997-09-26 1998-07-13 픽셀 칼라 응답도를 조절하기 위해 광 차폐층을 사용하기위한 방법 및 장치

Country Status (6)

Country Link
US (3) US6057586A (enExample)
EP (1) EP1018141A4 (enExample)
JP (1) JP2001518703A (enExample)
KR (1) KR100358862B1 (enExample)
AU (1) AU8401598A (enExample)
WO (1) WO1999017337A1 (enExample)

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US20040012029A1 (en) 2004-01-22
US6933168B2 (en) 2005-08-23
KR20010030728A (ko) 2001-04-16
JP2001518703A (ja) 2001-10-16
EP1018141A1 (en) 2000-07-12
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AU8401598A (en) 1999-04-23

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