JP4322166B2 - 固体撮像素子 - Google Patents
固体撮像素子 Download PDFInfo
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- JP4322166B2 JP4322166B2 JP2004143626A JP2004143626A JP4322166B2 JP 4322166 B2 JP4322166 B2 JP 4322166B2 JP 2004143626 A JP2004143626 A JP 2004143626A JP 2004143626 A JP2004143626 A JP 2004143626A JP 4322166 B2 JP4322166 B2 JP 4322166B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
- H01L27/14818—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14868—CCD or CID colour imagers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
め込む埋め込み領域である。電荷蓄積領域であるn型不純物層5a,6aを表面から離すことにより、白傷等を防止し、S/N比を良好に保つ。
2 垂直CCDチャネル
3 垂直転送電極(低感度フォトダイオード読み出しゲート電極)
4 垂直転送電極(高感度フォトダイオード読み出しゲート電極)
5 低感度フォトダイオード
5a (低感度フォトダイオード)n型不純物層
6 高感度フォトダイオード
6a (高感度フォトダイオード)n型不純物層
7 フォトダイオード間素子分離領域
8,8R,8G,8B,108,108R,108G,108B開口部
9,109 遮光膜
9a 高感度フォトダイオード遮光膜
9b 低感度フォトダイオード遮光膜
11 ゲート絶縁膜
12 p+型不純物層
17 p型ウエル
18 半導体基板
19 平坦化層
20 マイクロレンズ
21 カラーフィルタ層
21R 赤色カラーフィルタ層
21G 緑色カラーフィルタ層
21B 青色カラーフィルタ層
22 (高感度フォトダイオード作製用)レジスト
23 (低感度フォトダイオード作製用)レジスト
24、25 n型不純物
30、130 画素(光電変換素子)
51、100、200、300 固体撮像素子
52 駆動信号発生装置
53 出力信号処理装置
54 記憶装置
55 表示装置
56 伝送装置
57 テレビジョン
65 駆動部
66 水平CCD部
67 増幅回路部
70 MOSトランジスタ
103 読み出しゲート電極
105 n型不純物層
110 高屈折率透光性絶縁層
Claims (15)
- 入射光を少なくとも第1の波長の色と、前記第1の波長よりも短い第2の波長の色と、前記第2の波長よりも短い第3の波長の色とを含む複数の色に色分解する色分解手段と、
前記色分解手段の下方に形成される、複数の開口部を有する遮光膜であって、前記第1の波長の色に色分解された光を透過させる第1の開口部と、前記第2の波長の色に色分解された光を透過させる第2の開口部と、前記第3の波長の色に色分解された光を透過させる第3の開口部とを有する遮光膜と、
行方向及び列方向に配列され、前記色分解手段で色分解され、前記遮光膜の開口部を透過した入射光を受光して、入射光量に応じた信号電荷を生成する複数の光電変換素子とを有し、
前記第1の開口部の面積が、前記第2の開口部の面積よりも大きく、且つ前記第2の開口部の面積が、前記第3の開口部の面積よりも大きくなるように、前記遮光膜に前記第1、第2及び第3の開口部が形成されており、
前記開口部は、開口面積が受光部の中心部から周辺部に行くに従い相対的に大きくなるように形成される固体撮像素子。 - 前記第1の波長の色が赤であり、前記第2の波長の色が緑であり、前記第3の波長の色が青である請求項1記載の固体撮像素子。
- 入射光を第1の波長の色、前記第1の波長よりも短い第2の波長の色、前記第2の波長よりも短い第3の波長の色を含む複数の色に色分解する色分解手段と、
前記色分解手段の下方に形成される、複数の開口部を有する遮光膜であって、前記第1の波長の色に色分解された光を透過させる第1の開口部と、前記第2の波長の色に色分解された光を透過させる第2の開口部と、前記第3の波長の色に色分解された光を透過させる第3の開口部とを有する遮光膜と、
行方向及び列方向に配列され、前記色分解手段で色分解され、前記遮光膜の開口部を透過した入射光を受光して、入射光量に応じた信号電荷を生成する複数の光電変換素子であって、前記第1、第2及び第3の開口部のそれぞれの下方に形成される第1の感度の光電変換素子と前記第1の感度より低い感度の第2の感度の光電変換素子とを含む複数の光電変換素子と
を有し、
前記第1の開口部のうちの前記第2の感度の光電変換素子上方の領域の面積が、前記第2の開口部のうちの前記第2の感度の光電変換素子上方の領域の面積よりも大きい、または、前記第3の開口部のうちの前記第2の感度の光電変換素子上方の領域の面積が、前記第2の開口部のうちの前記第2の感度の光電変換素子上方の領域の面積よりも小さくなるように、前記遮光膜に前記第1、第2及び第3の開口部が形成されている固体撮像素子。 - 前記第1の波長の色が赤であり、前記第2の波長の色が緑であり、前記第3の波長の色が青である請求項3記載の固体撮像素子。
- 前記第1の開口部のうちの前記第2の感度の光電変換素子上方の領域の面積が、前記第2の開口部のうちの前記第2の感度の光電変換素子上方の領域の面積に対して100%より大きく140%以下の範囲である、または、前記第3の開口部のうちの前記第2の感度の光電変換素子上方の領域の面積が、前記第2の開口部のうちの前記第2の感度の光電変換素子上方の領域の面積に対して60%以上で100%より小さい範囲である請求項4に記載の固体撮像素子。
- 前記開口部は、開口面積が受光部の中心部から周辺部に行くに従い相対的に大きくなるように形成される請求項3〜5のいずれか1項に記載の固体撮像素子。
- 前記開口部の形状は、等方性形状である請求項1〜6のいずれか1項に記載の固体撮像素子。
- 前記開口部の形状は正方形である請求項1〜7のいずれか1項に記載の固体撮像素子。
- 前記開口部の形状は円形である請求項1〜7のいずれか1項に記載の固体撮像素子。
- 前記開口部は、高屈折率透過性材料によって充填される請求項1〜9のいずれか1項に記載の固体撮像素子。
- 前記光電変換素子の配列は、ハニカム配列である請求項1〜10のいずれか1項に記載の固体撮像素子。
- 前記光電変換素子の配列は、正方格子配列である請求項1〜10のいずれか1項に記載の固体撮像素子。
- さらに、前記光電変換素子の列ごとに垂直電荷転送路を有する請求項1〜12のいずれか1項に記載の固体撮像素子。
- さらに、前記光電変換素子ごとにMOS型電荷検出回路を有する請求項1〜12のいずれか1項に記載の固体撮像素子。
- 請求項1〜14のいずれか1項に記載の固体撮像素子を有するデジタルカメラ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004143626A JP4322166B2 (ja) | 2003-09-19 | 2004-05-13 | 固体撮像素子 |
US10/936,590 US7612811B2 (en) | 2003-09-19 | 2004-09-09 | Solid state imaging device incorporating a light shielding film having openings of different sizes |
EP04021815A EP1517374A3 (en) | 2003-09-19 | 2004-09-14 | A solid state imaging device |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003327664 | 2003-09-19 | ||
JP2004143626A JP4322166B2 (ja) | 2003-09-19 | 2004-05-13 | 固体撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005117008A JP2005117008A (ja) | 2005-04-28 |
JP4322166B2 true JP4322166B2 (ja) | 2009-08-26 |
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JP2004143626A Expired - Fee Related JP4322166B2 (ja) | 2003-09-19 | 2004-05-13 | 固体撮像素子 |
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US (1) | US7612811B2 (ja) |
EP (1) | EP1517374A3 (ja) |
JP (1) | JP4322166B2 (ja) |
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2004
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- 2004-09-09 US US10/936,590 patent/US7612811B2/en not_active Expired - Fee Related
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EP1517374A2 (en) | 2005-03-23 |
JP2005117008A (ja) | 2005-04-28 |
US7612811B2 (en) | 2009-11-03 |
EP1517374A3 (en) | 2008-03-26 |
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