JP2001342454A5 - - Google Patents
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- Publication number
- JP2001342454A5 JP2001342454A5 JP2000164650A JP2000164650A JP2001342454A5 JP 2001342454 A5 JP2001342454 A5 JP 2001342454A5 JP 2000164650 A JP2000164650 A JP 2000164650A JP 2000164650 A JP2000164650 A JP 2000164650A JP 2001342454 A5 JP2001342454 A5 JP 2001342454A5
- Authority
- JP
- Japan
- Prior art keywords
- acid
- polishing
- dispersion medium
- abrasive
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 19
- 239000002612 dispersion medium Substances 0.000 claims 11
- 239000003795 chemical substances by application Substances 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 7
- 239000006061 abrasive grain Substances 0.000 claims 5
- 150000001875 compounds Chemical class 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims 3
- 239000006185 dispersion Substances 0.000 claims 3
- 229910020366 ClO 4 Inorganic materials 0.000 claims 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 2
- QIAFMBKCNZACKA-UHFFFAOYSA-N N-benzoylglycine Chemical compound OC(=O)CNC(=O)C1=CC=CC=C1 QIAFMBKCNZACKA-UHFFFAOYSA-N 0.000 claims 2
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 claims 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid group Chemical group C(CCCCC(=O)O)(=O)O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- -1 organic acid salt Chemical class 0.000 claims 2
- 150000007524 organic acids Chemical class 0.000 claims 2
- 239000003960 organic solvent Substances 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 2
- DKSZLDSPXIWGFO-BLOJGBSASA-N (4r,4ar,7s,7ar,12bs)-9-methoxy-3-methyl-2,4,4a,7,7a,13-hexahydro-1h-4,12-methanobenzofuro[3,2-e]isoquinoline-7-ol;phosphoric acid;hydrate Chemical compound O.OP(O)(O)=O.OP(O)(O)=O.C([C@H]1[C@H](N(CC[C@@]112)C)C3)=C[C@H](O)[C@@H]1OC1=C2C3=CC=C1OC.C([C@H]1[C@H](N(CC[C@@]112)C)C3)=C[C@H](O)[C@@H]1OC1=C2C3=CC=C1OC DKSZLDSPXIWGFO-BLOJGBSASA-N 0.000 claims 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- FERIUCNNQQJTOY-UHFFFAOYSA-M Butyrate Chemical compound CCCC([O-])=O FERIUCNNQQJTOY-UHFFFAOYSA-M 0.000 claims 1
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Natural products CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims 1
- 229910021589 Copper(I) bromide Inorganic materials 0.000 claims 1
- 229910016509 CuF 2 Inorganic materials 0.000 claims 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 claims 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims 1
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims 1
- 229910017855 NH 4 F Inorganic materials 0.000 claims 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 claims 1
- 229930006000 Sucrose Natural products 0.000 claims 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims 1
- 229940022663 acetate Drugs 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000003929 acidic solution Substances 0.000 claims 1
- 239000001361 adipic acid Substances 0.000 claims 1
- 235000011037 adipic acid Nutrition 0.000 claims 1
- 239000012670 alkaline solution Substances 0.000 claims 1
- AWUCVROLDVIAJX-UHFFFAOYSA-N alpha-glycerophosphate Natural products OCC(O)COP(O)(O)=O AWUCVROLDVIAJX-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- 239000002280 amphoteric surfactant Substances 0.000 claims 1
- 239000003945 anionic surfactant Substances 0.000 claims 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims 1
- 239000003093 cationic surfactant Substances 0.000 claims 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 claims 1
- 229940106681 chloroacetic acid Drugs 0.000 claims 1
- 229940114081 cinnamate Drugs 0.000 claims 1
- 229960004415 codeine phosphate Drugs 0.000 claims 1
- 239000002270 dispersing agent Substances 0.000 claims 1
- 229940050410 gluconate Drugs 0.000 claims 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N mandelic acid Chemical compound OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-M naphthalene-1-sulfonate Chemical compound C1=CC=C2C(S(=O)(=O)[O-])=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-M 0.000 claims 1
- 229960003512 nicotinic acid Drugs 0.000 claims 1
- 235000001968 nicotinic acid Nutrition 0.000 claims 1
- 239000011664 nicotinic acid Substances 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 239000005416 organic matter Substances 0.000 claims 1
- 229960005010 orotic acid Drugs 0.000 claims 1
- ZDYUUBIMAGBMPY-UHFFFAOYSA-N oxalic acid;hydrate Chemical compound O.OC(=O)C(O)=O ZDYUUBIMAGBMPY-UHFFFAOYSA-N 0.000 claims 1
- LCPDWSOZIOUXRV-UHFFFAOYSA-N phenoxyacetic acid Chemical compound OC(=O)COC1=CC=CC=C1 LCPDWSOZIOUXRV-UHFFFAOYSA-N 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
- HFLFUTYMYGFMDC-UHFFFAOYSA-N pyrrolidine-2,5-dione;hydrate Chemical compound O.O=C1CCC(=O)N1 HFLFUTYMYGFMDC-UHFFFAOYSA-N 0.000 claims 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 claims 1
- 229960001860 salicylate Drugs 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- AWUCVROLDVIAJX-GSVOUGTGSA-N sn-glycerol 3-phosphate Chemical compound OC[C@@H](O)COP(O)(O)=O AWUCVROLDVIAJX-GSVOUGTGSA-N 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 239000005720 sucrose Substances 0.000 claims 1
- 239000011975 tartaric acid Substances 0.000 claims 1
- 235000002906 tartaric acid Nutrition 0.000 claims 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 claims 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 claims 1
- 229960004319 trichloroacetic acid Drugs 0.000 claims 1
- 229940070710 valerate Drugs 0.000 claims 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims 1
- PXQPEWDEAKTCGB-UHFFFAOYSA-N vitamin B13 Natural products OC(=O)C1=CC(=O)NC(=O)N1 PXQPEWDEAKTCGB-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000164650A JP3945964B2 (ja) | 2000-06-01 | 2000-06-01 | 研磨剤、研磨方法及び半導体装置の製造方法 |
| TW090104426A TWI236498B (en) | 2000-06-01 | 2001-02-27 | Abrasive, method for polishing and method for manufacturing semiconductor |
| KR10-2001-0010428A KR100483411B1 (ko) | 2000-06-01 | 2001-02-28 | 연마제, 연마 방법 및 반도체 장치의 제조 방법 |
| US09/797,940 US6758872B2 (en) | 2000-06-01 | 2001-03-05 | Polishing slurry |
| SG200101322A SG100632A1 (en) | 2000-06-01 | 2001-03-05 | Polishing slurry, polishing method and processes for fabricating semiconductor devices |
| US09/940,881 US6656022B2 (en) | 2000-06-01 | 2001-08-29 | Method for polishing a semiconductor substrate member |
| US09/940,880 US6656021B2 (en) | 2000-06-01 | 2001-08-29 | Process for fabricating a semiconductor device |
| KR10-2004-0076924A KR100468988B1 (ko) | 2000-06-01 | 2004-09-24 | 연마제, 연마 방법 및 반도체 장치의 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000164650A JP3945964B2 (ja) | 2000-06-01 | 2000-06-01 | 研磨剤、研磨方法及び半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001342454A JP2001342454A (ja) | 2001-12-14 |
| JP2001342454A5 true JP2001342454A5 (https=) | 2004-11-11 |
| JP3945964B2 JP3945964B2 (ja) | 2007-07-18 |
Family
ID=18668241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000164650A Expired - Fee Related JP3945964B2 (ja) | 2000-06-01 | 2000-06-01 | 研磨剤、研磨方法及び半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US6758872B2 (https=) |
| JP (1) | JP3945964B2 (https=) |
| KR (2) | KR100483411B1 (https=) |
| SG (1) | SG100632A1 (https=) |
| TW (1) | TWI236498B (https=) |
Families Citing this family (50)
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|---|---|---|---|---|
| US6165956A (en) * | 1997-10-21 | 2000-12-26 | Lam Research Corporation | Methods and apparatus for cleaning semiconductor substrates after polishing of copper film |
| US6443811B1 (en) * | 2000-06-20 | 2002-09-03 | Infineon Technologies Ag | Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing |
| JP2002288821A (ja) * | 2001-03-27 | 2002-10-04 | Showa Denko Kk | テクスチャリング加工用組成物 |
| US7008554B2 (en) * | 2001-07-13 | 2006-03-07 | Applied Materials, Inc. | Dual reduced agents for barrier removal in chemical mechanical polishing |
| US7121926B2 (en) * | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
| US20030119316A1 (en) * | 2001-12-21 | 2003-06-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents |
| US6730592B2 (en) | 2001-12-21 | 2004-05-04 | Micron Technology, Inc. | Methods for planarization of metal-containing surfaces using halogens and halide salts |
| US7049237B2 (en) * | 2001-12-21 | 2006-05-23 | Micron Technology, Inc. | Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases |
| KR100445760B1 (ko) * | 2001-12-28 | 2004-08-25 | 제일모직주식회사 | 금속오염이 적은 금속배선 연마용 슬러리 조성물 |
| KR100445757B1 (ko) * | 2001-12-28 | 2004-08-25 | 제일모직주식회사 | 금속배선 연마용 슬러리 조성물 |
| JP2003218084A (ja) * | 2002-01-24 | 2003-07-31 | Nec Electronics Corp | 除去液、半導体基板の洗浄方法および半導体装置の製造方法 |
| US6899596B2 (en) * | 2002-02-22 | 2005-05-31 | Agere Systems, Inc. | Chemical mechanical polishing of dual orientation polycrystalline materials |
| KR100499403B1 (ko) * | 2002-03-06 | 2005-07-07 | 주식회사 하이닉스반도체 | 슬러리 제조 방법 |
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| US6604987B1 (en) | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
| RU2247073C2 (ru) * | 2003-02-13 | 2005-02-27 | Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" | Способ получения дигидрата тетрахлорокупрата (ii) аммония |
| KR20060118396A (ko) * | 2003-07-30 | 2006-11-23 | 클라이막스 엔지니어레드 메테리얼스, 엘엘씨 | 구리의 화학적-기계적 평면화를 위한 슬러리 및 방법 |
| US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
| US7186653B2 (en) * | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
| US20050126588A1 (en) * | 2003-11-04 | 2005-06-16 | Carter Melvin K. | Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor |
| EP1616926A1 (en) | 2004-07-15 | 2006-01-18 | Interuniversitair Microelektronica Centrum ( Imec) | Slurry composition and method for chemical polishing of copper integrated with tungsten based barrier metals |
| US7363854B2 (en) * | 2004-12-16 | 2008-04-29 | Asml Holding N.V. | System and method for patterning both sides of a substrate utilizing imprint lithography |
| US7410591B2 (en) * | 2004-12-16 | 2008-08-12 | Asml Holding N.V. | Method and system for making a nano-plate for imprint lithography |
| US7409759B2 (en) * | 2004-12-16 | 2008-08-12 | Asml Holding N.V. | Method for making a computer hard drive platen using a nano-plate |
| US7399422B2 (en) * | 2005-11-29 | 2008-07-15 | Asml Holding N.V. | System and method for forming nanodisks used in imprint lithography and nanodisk and memory disk formed thereby |
| US7331283B2 (en) * | 2004-12-16 | 2008-02-19 | Asml Holding N.V. | Method and apparatus for imprint pattern replication |
| KR100646729B1 (ko) * | 2004-12-30 | 2006-11-23 | 주식회사 실트론 | 비저항값이 높은 실리콘웨이퍼의 d-결함 평가용 부식액및 이를 이용한 평가방법 |
| EP1871855B1 (en) | 2005-03-25 | 2010-03-24 | DuPont Air Products NanoMaterials L.L.C. | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
| AU2006283664B2 (en) * | 2005-08-19 | 2012-04-12 | Houghton Technical Corp. | Methods and compositions for acid treatment of a metal surface |
| ATE469199T1 (de) * | 2006-10-31 | 2010-06-15 | Soitec Silicon On Insulator | Verfahren zur charakterisierung von defekten auf silizium-oberflächen, ätzlösung für silizium- oberflächen und verfahren zur behandlung von silizium-oberflächen mit der ätzlösung |
| US20090026345A1 (en) * | 2007-07-24 | 2009-01-29 | Tracy Mark S | Electronic device shock-absorbing mounting system |
| US20090061630A1 (en) * | 2007-08-30 | 2009-03-05 | Dupont Air Products Nanomaterials Llc | Method for Chemical Mechanical Planarization of A Metal-containing Substrate |
| US7758403B2 (en) * | 2007-11-16 | 2010-07-20 | Hitachi Global Storage Technologies Netherlands B.V. | System, method and apparatus for lapping workpieces with soluble abrasives |
| CN101933124B (zh) * | 2008-02-06 | 2012-07-04 | Jsr株式会社 | 化学机械研磨用水系分散体以及化学机械研磨方法 |
| US8506661B2 (en) * | 2008-10-24 | 2013-08-13 | Air Products & Chemicals, Inc. | Polishing slurry for copper films |
| KR20100079441A (ko) * | 2008-12-31 | 2010-07-08 | 주식회사 동진쎄미켐 | 금속막에 대한 연마율 및 선택비가 향상된 화학-기계적 연마 슬러리 조성물 |
| US9368367B2 (en) * | 2009-04-13 | 2016-06-14 | Sinmat, Inc. | Chemical mechanical polishing of silicon carbide comprising surfaces |
| JP5321430B2 (ja) * | 2009-12-02 | 2013-10-23 | 信越半導体株式会社 | シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法 |
| JP6005521B2 (ja) * | 2010-11-08 | 2016-10-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた半導体基板の研磨方法 |
| US9305851B2 (en) * | 2013-11-19 | 2016-04-05 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for chemical mechanical planarization with fluorescence detection |
| JP6557243B2 (ja) * | 2014-09-26 | 2019-08-07 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN105525318A (zh) * | 2016-01-18 | 2016-04-27 | 苏州市华婷特种电镀有限公司 | 一种电镀工艺中对镀件预处理的方法 |
| US11498182B2 (en) * | 2016-02-26 | 2022-11-15 | Fujimi Incorporated | Polishing method and polishing pad |
| JP7252712B2 (ja) * | 2017-03-31 | 2023-04-05 | ナガセケムテックス株式会社 | エッチング液 |
| US10510601B2 (en) * | 2017-09-28 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for reducing metal plug corrosion and device |
| CN109352430B (zh) * | 2018-12-12 | 2020-12-04 | 中国电子科技集团公司第四十六研究所 | 一种减小锗磨削片弯曲度的加工方法 |
| CN112500302A (zh) * | 2020-12-30 | 2021-03-16 | 沧州华晨生物科技有限公司 | 一种工业甘氨酸的生产方法 |
| CN114029511A (zh) * | 2021-11-10 | 2022-02-11 | 成都先进金属材料产业技术研究院股份有限公司 | 钛合金slm成型件支撑结构及其去除方法 |
| CN121399219A (zh) * | 2023-06-01 | 2026-01-23 | 圣戈本陶瓷及塑料股份有限公司 | 用于进行材料移除操作的抛光组合物和方法 |
| CN116924453A (zh) * | 2023-06-15 | 2023-10-24 | 中国科学院福建物质结构研究所 | 一种稀土碘酸盐材料及其制备方法和应用 |
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-
2000
- 2000-06-01 JP JP2000164650A patent/JP3945964B2/ja not_active Expired - Fee Related
-
2001
- 2001-02-27 TW TW090104426A patent/TWI236498B/zh not_active IP Right Cessation
- 2001-02-28 KR KR10-2001-0010428A patent/KR100483411B1/ko not_active Expired - Fee Related
- 2001-03-05 SG SG200101322A patent/SG100632A1/en unknown
- 2001-03-05 US US09/797,940 patent/US6758872B2/en not_active Expired - Fee Related
- 2001-08-29 US US09/940,880 patent/US6656021B2/en not_active Expired - Fee Related
- 2001-08-29 US US09/940,881 patent/US6656022B2/en not_active Expired - Fee Related
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2004
- 2004-09-24 KR KR10-2004-0076924A patent/KR100468988B1/ko not_active Expired - Fee Related
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