JP2001342454A5 - - Google Patents

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Publication number
JP2001342454A5
JP2001342454A5 JP2000164650A JP2000164650A JP2001342454A5 JP 2001342454 A5 JP2001342454 A5 JP 2001342454A5 JP 2000164650 A JP2000164650 A JP 2000164650A JP 2000164650 A JP2000164650 A JP 2000164650A JP 2001342454 A5 JP2001342454 A5 JP 2001342454A5
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JP
Japan
Prior art keywords
acid
polishing
dispersion medium
abrasive
semiconductor substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000164650A
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English (en)
Japanese (ja)
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JP3945964B2 (ja
JP2001342454A (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2000164650A external-priority patent/JP3945964B2/ja
Priority to JP2000164650A priority Critical patent/JP3945964B2/ja
Priority to TW090104426A priority patent/TWI236498B/zh
Priority to KR10-2001-0010428A priority patent/KR100483411B1/ko
Priority to US09/797,940 priority patent/US6758872B2/en
Priority to SG200101322A priority patent/SG100632A1/en
Priority to US09/940,880 priority patent/US6656021B2/en
Priority to US09/940,881 priority patent/US6656022B2/en
Publication of JP2001342454A publication Critical patent/JP2001342454A/ja
Priority to KR10-2004-0076924A priority patent/KR100468988B1/ko
Publication of JP2001342454A5 publication Critical patent/JP2001342454A5/ja
Publication of JP3945964B2 publication Critical patent/JP3945964B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000164650A 2000-06-01 2000-06-01 研磨剤、研磨方法及び半導体装置の製造方法 Expired - Fee Related JP3945964B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2000164650A JP3945964B2 (ja) 2000-06-01 2000-06-01 研磨剤、研磨方法及び半導体装置の製造方法
TW090104426A TWI236498B (en) 2000-06-01 2001-02-27 Abrasive, method for polishing and method for manufacturing semiconductor
KR10-2001-0010428A KR100483411B1 (ko) 2000-06-01 2001-02-28 연마제, 연마 방법 및 반도체 장치의 제조 방법
US09/797,940 US6758872B2 (en) 2000-06-01 2001-03-05 Polishing slurry
SG200101322A SG100632A1 (en) 2000-06-01 2001-03-05 Polishing slurry, polishing method and processes for fabricating semiconductor devices
US09/940,881 US6656022B2 (en) 2000-06-01 2001-08-29 Method for polishing a semiconductor substrate member
US09/940,880 US6656021B2 (en) 2000-06-01 2001-08-29 Process for fabricating a semiconductor device
KR10-2004-0076924A KR100468988B1 (ko) 2000-06-01 2004-09-24 연마제, 연마 방법 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000164650A JP3945964B2 (ja) 2000-06-01 2000-06-01 研磨剤、研磨方法及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001342454A JP2001342454A (ja) 2001-12-14
JP2001342454A5 true JP2001342454A5 (https=) 2004-11-11
JP3945964B2 JP3945964B2 (ja) 2007-07-18

Family

ID=18668241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000164650A Expired - Fee Related JP3945964B2 (ja) 2000-06-01 2000-06-01 研磨剤、研磨方法及び半導体装置の製造方法

Country Status (5)

Country Link
US (3) US6758872B2 (https=)
JP (1) JP3945964B2 (https=)
KR (2) KR100483411B1 (https=)
SG (1) SG100632A1 (https=)
TW (1) TWI236498B (https=)

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CN109352430B (zh) * 2018-12-12 2020-12-04 中国电子科技集团公司第四十六研究所 一种减小锗磨削片弯曲度的加工方法
CN112500302A (zh) * 2020-12-30 2021-03-16 沧州华晨生物科技有限公司 一种工业甘氨酸的生产方法
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