JP3945964B2 - 研磨剤、研磨方法及び半導体装置の製造方法 - Google Patents

研磨剤、研磨方法及び半導体装置の製造方法 Download PDF

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Publication number
JP3945964B2
JP3945964B2 JP2000164650A JP2000164650A JP3945964B2 JP 3945964 B2 JP3945964 B2 JP 3945964B2 JP 2000164650 A JP2000164650 A JP 2000164650A JP 2000164650 A JP2000164650 A JP 2000164650A JP 3945964 B2 JP3945964 B2 JP 3945964B2
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JP
Japan
Prior art keywords
acid
abrasive
polishing
compounds
dispersion medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2000164650A
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English (en)
Japanese (ja)
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JP2001342454A (ja
JP2001342454A5 (https=
Inventor
勝啓 太田
昭男 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000164650A priority Critical patent/JP3945964B2/ja
Priority to TW090104426A priority patent/TWI236498B/zh
Priority to KR10-2001-0010428A priority patent/KR100483411B1/ko
Priority to SG200101322A priority patent/SG100632A1/en
Priority to US09/797,940 priority patent/US6758872B2/en
Priority to US09/940,881 priority patent/US6656022B2/en
Priority to US09/940,880 priority patent/US6656021B2/en
Publication of JP2001342454A publication Critical patent/JP2001342454A/ja
Priority to KR10-2004-0076924A priority patent/KR100468988B1/ko
Publication of JP2001342454A5 publication Critical patent/JP2001342454A5/ja
Application granted granted Critical
Publication of JP3945964B2 publication Critical patent/JP3945964B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472Non-aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2000164650A 2000-06-01 2000-06-01 研磨剤、研磨方法及び半導体装置の製造方法 Expired - Fee Related JP3945964B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2000164650A JP3945964B2 (ja) 2000-06-01 2000-06-01 研磨剤、研磨方法及び半導体装置の製造方法
TW090104426A TWI236498B (en) 2000-06-01 2001-02-27 Abrasive, method for polishing and method for manufacturing semiconductor
KR10-2001-0010428A KR100483411B1 (ko) 2000-06-01 2001-02-28 연마제, 연마 방법 및 반도체 장치의 제조 방법
US09/797,940 US6758872B2 (en) 2000-06-01 2001-03-05 Polishing slurry
SG200101322A SG100632A1 (en) 2000-06-01 2001-03-05 Polishing slurry, polishing method and processes for fabricating semiconductor devices
US09/940,881 US6656022B2 (en) 2000-06-01 2001-08-29 Method for polishing a semiconductor substrate member
US09/940,880 US6656021B2 (en) 2000-06-01 2001-08-29 Process for fabricating a semiconductor device
KR10-2004-0076924A KR100468988B1 (ko) 2000-06-01 2004-09-24 연마제, 연마 방법 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000164650A JP3945964B2 (ja) 2000-06-01 2000-06-01 研磨剤、研磨方法及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001342454A JP2001342454A (ja) 2001-12-14
JP2001342454A5 JP2001342454A5 (https=) 2004-11-11
JP3945964B2 true JP3945964B2 (ja) 2007-07-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000164650A Expired - Fee Related JP3945964B2 (ja) 2000-06-01 2000-06-01 研磨剤、研磨方法及び半導体装置の製造方法

Country Status (5)

Country Link
US (3) US6758872B2 (https=)
JP (1) JP3945964B2 (https=)
KR (2) KR100483411B1 (https=)
SG (1) SG100632A1 (https=)
TW (1) TWI236498B (https=)

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Also Published As

Publication number Publication date
KR20010109071A (ko) 2001-12-08
US20020090894A1 (en) 2002-07-11
US20020034925A1 (en) 2002-03-21
US6656022B2 (en) 2003-12-02
KR100483411B1 (ko) 2005-04-15
JP2001342454A (ja) 2001-12-14
SG100632A1 (en) 2003-12-26
KR20040089044A (ko) 2004-10-20
KR100468988B1 (ko) 2005-02-02
US20020004360A1 (en) 2002-01-10
US6656021B2 (en) 2003-12-02
TWI236498B (en) 2005-07-21
US6758872B2 (en) 2004-07-06

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