JP3945964B2 - 研磨剤、研磨方法及び半導体装置の製造方法 - Google Patents
研磨剤、研磨方法及び半導体装置の製造方法 Download PDFInfo
- Publication number
- JP3945964B2 JP3945964B2 JP2000164650A JP2000164650A JP3945964B2 JP 3945964 B2 JP3945964 B2 JP 3945964B2 JP 2000164650 A JP2000164650 A JP 2000164650A JP 2000164650 A JP2000164650 A JP 2000164650A JP 3945964 B2 JP3945964 B2 JP 3945964B2
- Authority
- JP
- Japan
- Prior art keywords
- acid
- abrasive
- polishing
- compounds
- dispersion medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000164650A JP3945964B2 (ja) | 2000-06-01 | 2000-06-01 | 研磨剤、研磨方法及び半導体装置の製造方法 |
| TW090104426A TWI236498B (en) | 2000-06-01 | 2001-02-27 | Abrasive, method for polishing and method for manufacturing semiconductor |
| KR10-2001-0010428A KR100483411B1 (ko) | 2000-06-01 | 2001-02-28 | 연마제, 연마 방법 및 반도체 장치의 제조 방법 |
| US09/797,940 US6758872B2 (en) | 2000-06-01 | 2001-03-05 | Polishing slurry |
| SG200101322A SG100632A1 (en) | 2000-06-01 | 2001-03-05 | Polishing slurry, polishing method and processes for fabricating semiconductor devices |
| US09/940,881 US6656022B2 (en) | 2000-06-01 | 2001-08-29 | Method for polishing a semiconductor substrate member |
| US09/940,880 US6656021B2 (en) | 2000-06-01 | 2001-08-29 | Process for fabricating a semiconductor device |
| KR10-2004-0076924A KR100468988B1 (ko) | 2000-06-01 | 2004-09-24 | 연마제, 연마 방법 및 반도체 장치의 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000164650A JP3945964B2 (ja) | 2000-06-01 | 2000-06-01 | 研磨剤、研磨方法及び半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001342454A JP2001342454A (ja) | 2001-12-14 |
| JP2001342454A5 JP2001342454A5 (https=) | 2004-11-11 |
| JP3945964B2 true JP3945964B2 (ja) | 2007-07-18 |
Family
ID=18668241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000164650A Expired - Fee Related JP3945964B2 (ja) | 2000-06-01 | 2000-06-01 | 研磨剤、研磨方法及び半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US6758872B2 (https=) |
| JP (1) | JP3945964B2 (https=) |
| KR (2) | KR100483411B1 (https=) |
| SG (1) | SG100632A1 (https=) |
| TW (1) | TWI236498B (https=) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6165956A (en) * | 1997-10-21 | 2000-12-26 | Lam Research Corporation | Methods and apparatus for cleaning semiconductor substrates after polishing of copper film |
| US6443811B1 (en) * | 2000-06-20 | 2002-09-03 | Infineon Technologies Ag | Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing |
| JP2002288821A (ja) * | 2001-03-27 | 2002-10-04 | Showa Denko Kk | テクスチャリング加工用組成物 |
| US7008554B2 (en) * | 2001-07-13 | 2006-03-07 | Applied Materials, Inc. | Dual reduced agents for barrier removal in chemical mechanical polishing |
| US7121926B2 (en) * | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
| US20030119316A1 (en) * | 2001-12-21 | 2003-06-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents |
| US6730592B2 (en) | 2001-12-21 | 2004-05-04 | Micron Technology, Inc. | Methods for planarization of metal-containing surfaces using halogens and halide salts |
| US7049237B2 (en) * | 2001-12-21 | 2006-05-23 | Micron Technology, Inc. | Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases |
| KR100445760B1 (ko) * | 2001-12-28 | 2004-08-25 | 제일모직주식회사 | 금속오염이 적은 금속배선 연마용 슬러리 조성물 |
| KR100445757B1 (ko) * | 2001-12-28 | 2004-08-25 | 제일모직주식회사 | 금속배선 연마용 슬러리 조성물 |
| JP2003218084A (ja) * | 2002-01-24 | 2003-07-31 | Nec Electronics Corp | 除去液、半導体基板の洗浄方法および半導体装置の製造方法 |
| US6899596B2 (en) * | 2002-02-22 | 2005-05-31 | Agere Systems, Inc. | Chemical mechanical polishing of dual orientation polycrystalline materials |
| KR100499403B1 (ko) * | 2002-03-06 | 2005-07-07 | 주식회사 하이닉스반도체 | 슬러리 제조 방법 |
| US6641630B1 (en) | 2002-06-06 | 2003-11-04 | Cabot Microelectronics Corp. | CMP compositions containing iodine and an iodine vapor-trapping agent |
| US6604987B1 (en) | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
| RU2247073C2 (ru) * | 2003-02-13 | 2005-02-27 | Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" | Способ получения дигидрата тетрахлорокупрата (ii) аммония |
| KR20060118396A (ko) * | 2003-07-30 | 2006-11-23 | 클라이막스 엔지니어레드 메테리얼스, 엘엘씨 | 구리의 화학적-기계적 평면화를 위한 슬러리 및 방법 |
| US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
| US7186653B2 (en) * | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
| US20050126588A1 (en) * | 2003-11-04 | 2005-06-16 | Carter Melvin K. | Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor |
| EP1616926A1 (en) | 2004-07-15 | 2006-01-18 | Interuniversitair Microelektronica Centrum ( Imec) | Slurry composition and method for chemical polishing of copper integrated with tungsten based barrier metals |
| US7363854B2 (en) * | 2004-12-16 | 2008-04-29 | Asml Holding N.V. | System and method for patterning both sides of a substrate utilizing imprint lithography |
| US7410591B2 (en) * | 2004-12-16 | 2008-08-12 | Asml Holding N.V. | Method and system for making a nano-plate for imprint lithography |
| US7409759B2 (en) * | 2004-12-16 | 2008-08-12 | Asml Holding N.V. | Method for making a computer hard drive platen using a nano-plate |
| US7399422B2 (en) * | 2005-11-29 | 2008-07-15 | Asml Holding N.V. | System and method for forming nanodisks used in imprint lithography and nanodisk and memory disk formed thereby |
| US7331283B2 (en) * | 2004-12-16 | 2008-02-19 | Asml Holding N.V. | Method and apparatus for imprint pattern replication |
| KR100646729B1 (ko) * | 2004-12-30 | 2006-11-23 | 주식회사 실트론 | 비저항값이 높은 실리콘웨이퍼의 d-결함 평가용 부식액및 이를 이용한 평가방법 |
| EP1871855B1 (en) | 2005-03-25 | 2010-03-24 | DuPont Air Products NanoMaterials L.L.C. | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
| AU2006283664B2 (en) * | 2005-08-19 | 2012-04-12 | Houghton Technical Corp. | Methods and compositions for acid treatment of a metal surface |
| ATE469199T1 (de) * | 2006-10-31 | 2010-06-15 | Soitec Silicon On Insulator | Verfahren zur charakterisierung von defekten auf silizium-oberflächen, ätzlösung für silizium- oberflächen und verfahren zur behandlung von silizium-oberflächen mit der ätzlösung |
| US20090026345A1 (en) * | 2007-07-24 | 2009-01-29 | Tracy Mark S | Electronic device shock-absorbing mounting system |
| US20090061630A1 (en) * | 2007-08-30 | 2009-03-05 | Dupont Air Products Nanomaterials Llc | Method for Chemical Mechanical Planarization of A Metal-containing Substrate |
| US7758403B2 (en) * | 2007-11-16 | 2010-07-20 | Hitachi Global Storage Technologies Netherlands B.V. | System, method and apparatus for lapping workpieces with soluble abrasives |
| CN101933124B (zh) * | 2008-02-06 | 2012-07-04 | Jsr株式会社 | 化学机械研磨用水系分散体以及化学机械研磨方法 |
| US8506661B2 (en) * | 2008-10-24 | 2013-08-13 | Air Products & Chemicals, Inc. | Polishing slurry for copper films |
| KR20100079441A (ko) * | 2008-12-31 | 2010-07-08 | 주식회사 동진쎄미켐 | 금속막에 대한 연마율 및 선택비가 향상된 화학-기계적 연마 슬러리 조성물 |
| US9368367B2 (en) * | 2009-04-13 | 2016-06-14 | Sinmat, Inc. | Chemical mechanical polishing of silicon carbide comprising surfaces |
| JP5321430B2 (ja) * | 2009-12-02 | 2013-10-23 | 信越半導体株式会社 | シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法 |
| JP6005521B2 (ja) * | 2010-11-08 | 2016-10-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた半導体基板の研磨方法 |
| US9305851B2 (en) * | 2013-11-19 | 2016-04-05 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for chemical mechanical planarization with fluorescence detection |
| JP6557243B2 (ja) * | 2014-09-26 | 2019-08-07 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN105525318A (zh) * | 2016-01-18 | 2016-04-27 | 苏州市华婷特种电镀有限公司 | 一种电镀工艺中对镀件预处理的方法 |
| US11498182B2 (en) * | 2016-02-26 | 2022-11-15 | Fujimi Incorporated | Polishing method and polishing pad |
| JP7252712B2 (ja) * | 2017-03-31 | 2023-04-05 | ナガセケムテックス株式会社 | エッチング液 |
| US10510601B2 (en) * | 2017-09-28 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for reducing metal plug corrosion and device |
| CN109352430B (zh) * | 2018-12-12 | 2020-12-04 | 中国电子科技集团公司第四十六研究所 | 一种减小锗磨削片弯曲度的加工方法 |
| CN112500302A (zh) * | 2020-12-30 | 2021-03-16 | 沧州华晨生物科技有限公司 | 一种工业甘氨酸的生产方法 |
| CN114029511A (zh) * | 2021-11-10 | 2022-02-11 | 成都先进金属材料产业技术研究院股份有限公司 | 钛合金slm成型件支撑结构及其去除方法 |
| CN121399219A (zh) * | 2023-06-01 | 2026-01-23 | 圣戈本陶瓷及塑料股份有限公司 | 用于进行材料移除操作的抛光组合物和方法 |
| CN116924453A (zh) * | 2023-06-15 | 2023-10-24 | 中国科学院福建物质结构研究所 | 一种稀土碘酸盐材料及其制备方法和应用 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0325232B1 (en) * | 1988-01-19 | 1996-09-11 | Fujimi Incorporated | Polishing composition |
| US4959113C1 (en) * | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
| US5114437A (en) * | 1990-08-28 | 1992-05-19 | Sumitomo Chemical Co., Ltd. | Polishing composition for metallic material |
| JP3278532B2 (ja) * | 1994-07-08 | 2002-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH0922885A (ja) | 1995-07-07 | 1997-01-21 | Fujitsu Ltd | 化学的機械研磨後の基板洗浄方法 |
| US5769689A (en) * | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
| US5993686A (en) * | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
| JPH10106987A (ja) * | 1996-09-30 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| JPH10102037A (ja) * | 1996-10-02 | 1998-04-21 | Kao Corp | 研磨材組成物及びこれを用いた基板の製造方法 |
| JPH10309660A (ja) | 1997-05-07 | 1998-11-24 | Tokuyama Corp | 仕上げ研磨剤 |
| JP3255095B2 (ja) | 1997-09-30 | 2002-02-12 | 日本電気株式会社 | 研磨液および研磨方法 |
| JP3371775B2 (ja) * | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
| JPH11162910A (ja) * | 1997-11-25 | 1999-06-18 | Sumitomo Chem Co Ltd | 半導体装置製造用研磨剤及び研磨方法 |
| JPH11181403A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| JP3877419B2 (ja) | 1998-02-03 | 2007-02-07 | 三井化学株式会社 | 有機電界発光素子 |
| US5968238A (en) * | 1998-02-18 | 1999-10-19 | Turtle Wax, Inc. | Polishing composition including water soluble polishing agent |
| US6177026B1 (en) * | 1998-05-26 | 2001-01-23 | Cabot Microelectronics Corporation | CMP slurry containing a solid catalyst |
| JP4163788B2 (ja) * | 1998-06-25 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
| JP2000109816A (ja) * | 1998-10-05 | 2000-04-18 | Okamoto Machine Tool Works Ltd | 研磨剤スラリ−の調製方法 |
| JP2000183003A (ja) * | 1998-10-07 | 2000-06-30 | Toshiba Corp | 銅系金属用研磨組成物および半導体装置の製造方法 |
| AU1219600A (en) | 1998-10-21 | 2000-05-08 | W.R. Grace & Co.-Conn. | Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles |
| US6293851B1 (en) | 1998-11-06 | 2001-09-25 | Beaver Creek Concepts Inc | Fixed abrasive finishing method using lubricants |
| KR20000033394A (ko) * | 1998-11-23 | 2000-06-15 | 윤종용 | Cmp용 연마제 와 그 제조방법 |
| US6083840A (en) * | 1998-11-25 | 2000-07-04 | Arch Specialty Chemicals, Inc. | Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys |
| KR100472882B1 (ko) * | 1999-01-18 | 2005-03-07 | 가부시끼가이샤 도시바 | 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법 |
| EP1252247A1 (en) | 1999-12-14 | 2002-10-30 | Rodel Holdings, Inc. | Polishing compositions for semiconductor substrates |
-
2000
- 2000-06-01 JP JP2000164650A patent/JP3945964B2/ja not_active Expired - Fee Related
-
2001
- 2001-02-27 TW TW090104426A patent/TWI236498B/zh not_active IP Right Cessation
- 2001-02-28 KR KR10-2001-0010428A patent/KR100483411B1/ko not_active Expired - Fee Related
- 2001-03-05 SG SG200101322A patent/SG100632A1/en unknown
- 2001-03-05 US US09/797,940 patent/US6758872B2/en not_active Expired - Fee Related
- 2001-08-29 US US09/940,880 patent/US6656021B2/en not_active Expired - Fee Related
- 2001-08-29 US US09/940,881 patent/US6656022B2/en not_active Expired - Fee Related
-
2004
- 2004-09-24 KR KR10-2004-0076924A patent/KR100468988B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010109071A (ko) | 2001-12-08 |
| US20020090894A1 (en) | 2002-07-11 |
| US20020034925A1 (en) | 2002-03-21 |
| US6656022B2 (en) | 2003-12-02 |
| KR100483411B1 (ko) | 2005-04-15 |
| JP2001342454A (ja) | 2001-12-14 |
| SG100632A1 (en) | 2003-12-26 |
| KR20040089044A (ko) | 2004-10-20 |
| KR100468988B1 (ko) | 2005-02-02 |
| US20020004360A1 (en) | 2002-01-10 |
| US6656021B2 (en) | 2003-12-02 |
| TWI236498B (en) | 2005-07-21 |
| US6758872B2 (en) | 2004-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3945964B2 (ja) | 研磨剤、研磨方法及び半導体装置の製造方法 | |
| JP3616802B2 (ja) | スラリー組成物およびそれを用いる化学機械的研磨方法 | |
| US7524347B2 (en) | CMP composition comprising surfactant | |
| CN101802116B (zh) | 利用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 | |
| TWI397578B (zh) | 拋光鎳-磷的方法 | |
| CN101896571B (zh) | 用于金属移除速率控制的卤化物阴离子 | |
| JP2015528842A (ja) | Gst用cmpスラリー | |
| JP2008531319A (ja) | サファイア表面を研磨するための組成物および方法 | |
| JP6901497B2 (ja) | 研磨用組成物及びシリコンウェーハの研磨方法 | |
| WO2011034808A2 (en) | Composition and method for polishing bulk silicon | |
| JPH07221059A (ja) | 半導体ウェーハーの研磨方法 | |
| JP2005268667A (ja) | 研磨用組成物 | |
| JP6010020B2 (ja) | バルクシリコンの研磨組成物及び研磨方法 | |
| WO2010090928A2 (en) | Polishing composition for nickel-phosphorous memory disks | |
| JP2009530853A (ja) | 金属の除去速度を制御するためのハロゲン化物アニオン | |
| US7922926B2 (en) | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks | |
| TWI692510B (zh) | 用於拋光記憶體硬碟以展現減少之表面刮痕之組合物及方法 | |
| US20180298234A1 (en) | Chemical-mechanical processing slurry and methods | |
| WO2018191485A1 (en) | Chemical-mechanical processing slurry and methods for processing a nickel substrate surface | |
| JP6515702B2 (ja) | 研磨液、貯蔵液及び研磨方法 | |
| JP6536208B2 (ja) | 研磨液、貯蔵液及び研磨方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060824 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060905 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061025 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20061219 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070130 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070130 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20070312 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070403 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070410 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100420 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110420 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110420 Year of fee payment: 4 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110420 Year of fee payment: 4 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |