SG100632A1 - Polishing slurry, polishing method and processes for fabricating semiconductor devices - Google Patents

Polishing slurry, polishing method and processes for fabricating semiconductor devices

Info

Publication number
SG100632A1
SG100632A1 SG200101322A SG200101322A SG100632A1 SG 100632 A1 SG100632 A1 SG 100632A1 SG 200101322 A SG200101322 A SG 200101322A SG 200101322 A SG200101322 A SG 200101322A SG 100632 A1 SG100632 A1 SG 100632A1
Authority
SG
Singapore
Prior art keywords
polishing
processes
semiconductor devices
fabricating semiconductor
slurry
Prior art date
Application number
SG200101322A
Other languages
English (en)
Inventor
Ohta Katsuhiro
Saito Akio
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG100632A1 publication Critical patent/SG100632A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG200101322A 2000-06-01 2001-03-05 Polishing slurry, polishing method and processes for fabricating semiconductor devices SG100632A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000164650A JP3945964B2 (ja) 2000-06-01 2000-06-01 研磨剤、研磨方法及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG100632A1 true SG100632A1 (en) 2003-12-26

Family

ID=18668241

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200101322A SG100632A1 (en) 2000-06-01 2001-03-05 Polishing slurry, polishing method and processes for fabricating semiconductor devices

Country Status (5)

Country Link
US (3) US6758872B2 (https=)
JP (1) JP3945964B2 (https=)
KR (2) KR100483411B1 (https=)
SG (1) SG100632A1 (https=)
TW (1) TWI236498B (https=)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165956A (en) * 1997-10-21 2000-12-26 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
US6443811B1 (en) * 2000-06-20 2002-09-03 Infineon Technologies Ag Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing
JP2002288821A (ja) * 2001-03-27 2002-10-04 Showa Denko Kk テクスチャリング加工用組成物
US7008554B2 (en) * 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US7121926B2 (en) * 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
US20030119316A1 (en) * 2001-12-21 2003-06-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
US6730592B2 (en) 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US7049237B2 (en) * 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
KR100445760B1 (ko) * 2001-12-28 2004-08-25 제일모직주식회사 금속오염이 적은 금속배선 연마용 슬러리 조성물
KR100445757B1 (ko) * 2001-12-28 2004-08-25 제일모직주식회사 금속배선 연마용 슬러리 조성물
JP2003218084A (ja) * 2002-01-24 2003-07-31 Nec Electronics Corp 除去液、半導体基板の洗浄方法および半導体装置の製造方法
US6899596B2 (en) * 2002-02-22 2005-05-31 Agere Systems, Inc. Chemical mechanical polishing of dual orientation polycrystalline materials
KR100499403B1 (ko) * 2002-03-06 2005-07-07 주식회사 하이닉스반도체 슬러리 제조 방법
US6641630B1 (en) 2002-06-06 2003-11-04 Cabot Microelectronics Corp. CMP compositions containing iodine and an iodine vapor-trapping agent
US6604987B1 (en) 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
RU2247073C2 (ru) * 2003-02-13 2005-02-27 Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" Способ получения дигидрата тетрахлорокупрата (ii) аммония
KR20060118396A (ko) * 2003-07-30 2006-11-23 클라이막스 엔지니어레드 메테리얼스, 엘엘씨 구리의 화학적-기계적 평면화를 위한 슬러리 및 방법
US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050126588A1 (en) * 2003-11-04 2005-06-16 Carter Melvin K. Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor
EP1616926A1 (en) 2004-07-15 2006-01-18 Interuniversitair Microelektronica Centrum ( Imec) Slurry composition and method for chemical polishing of copper integrated with tungsten based barrier metals
US7363854B2 (en) * 2004-12-16 2008-04-29 Asml Holding N.V. System and method for patterning both sides of a substrate utilizing imprint lithography
US7410591B2 (en) * 2004-12-16 2008-08-12 Asml Holding N.V. Method and system for making a nano-plate for imprint lithography
US7409759B2 (en) * 2004-12-16 2008-08-12 Asml Holding N.V. Method for making a computer hard drive platen using a nano-plate
US7399422B2 (en) * 2005-11-29 2008-07-15 Asml Holding N.V. System and method for forming nanodisks used in imprint lithography and nanodisk and memory disk formed thereby
US7331283B2 (en) * 2004-12-16 2008-02-19 Asml Holding N.V. Method and apparatus for imprint pattern replication
KR100646729B1 (ko) * 2004-12-30 2006-11-23 주식회사 실트론 비저항값이 높은 실리콘웨이퍼의 ｄ-결함 평가용 부식액및 이를 이용한 평가방법
EP1871855B1 (en) 2005-03-25 2010-03-24 DuPont Air Products NanoMaterials L.L.C. Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
AU2006283664B2 (en) * 2005-08-19 2012-04-12 Houghton Technical Corp. Methods and compositions for acid treatment of a metal surface
ATE469199T1 (de) * 2006-10-31 2010-06-15 Soitec Silicon On Insulator Verfahren zur charakterisierung von defekten auf silizium-oberflächen, ätzlösung für silizium- oberflächen und verfahren zur behandlung von silizium-oberflächen mit der ätzlösung
US20090026345A1 (en) * 2007-07-24 2009-01-29 Tracy Mark S Electronic device shock-absorbing mounting system
US20090061630A1 (en) * 2007-08-30 2009-03-05 Dupont Air Products Nanomaterials Llc Method for Chemical Mechanical Planarization of A Metal-containing Substrate
US7758403B2 (en) * 2007-11-16 2010-07-20 Hitachi Global Storage Technologies Netherlands B.V. System, method and apparatus for lapping workpieces with soluble abrasives
CN101933124B (zh) * 2008-02-06 2012-07-04 Jsr株式会社 化学机械研磨用水系分散体以及化学机械研磨方法
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
KR20100079441A (ko) * 2008-12-31 2010-07-08 주식회사 동진쎄미켐 금속막에 대한 연마율 및 선택비가 향상된 화학-기계적 연마 슬러리 조성물
US9368367B2 (en) * 2009-04-13 2016-06-14 Sinmat, Inc. Chemical mechanical polishing of silicon carbide comprising surfaces
JP5321430B2 (ja) * 2009-12-02 2013-10-23 信越半導体株式会社 シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法
JP6005521B2 (ja) * 2010-11-08 2016-10-12 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた半導体基板の研磨方法
US9305851B2 (en) * 2013-11-19 2016-04-05 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for chemical mechanical planarization with fluorescence detection
JP6557243B2 (ja) * 2014-09-26 2019-08-07 株式会社フジミインコーポレーテッド 研磨用組成物
CN105525318A (zh) * 2016-01-18 2016-04-27 苏州市华婷特种电镀有限公司 一种电镀工艺中对镀件预处理的方法
US11498182B2 (en) * 2016-02-26 2022-11-15 Fujimi Incorporated Polishing method and polishing pad
JP7252712B2 (ja) * 2017-03-31 2023-04-05 ナガセケムテックス株式会社 エッチング液
US10510601B2 (en) * 2017-09-28 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing metal plug corrosion and device
CN109352430B (zh) * 2018-12-12 2020-12-04 中国电子科技集团公司第四十六研究所 一种减小锗磨削片弯曲度的加工方法
CN112500302A (zh) * 2020-12-30 2021-03-16 沧州华晨生物科技有限公司 一种工业甘氨酸的生产方法
CN114029511A (zh) * 2021-11-10 2022-02-11 成都先进金属材料产业技术研究院股份有限公司 钛合金slm成型件支撑结构及其去除方法
CN121399219A (zh) * 2023-06-01 2026-01-23 圣戈本陶瓷及塑料股份有限公司 用于进行材料移除操作的抛光组合物和方法
CN116924453A (zh) * 2023-06-15 2023-10-24 中国科学院福建物质结构研究所 一种稀土碘酸盐材料及其制备方法和应用

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0325232B1 (en) * 1988-01-19 1996-09-11 Fujimi Incorporated Polishing composition
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5114437A (en) * 1990-08-28 1992-05-19 Sumitomo Chemical Co., Ltd. Polishing composition for metallic material
JP3278532B2 (ja) * 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
JPH0922885A (ja) 1995-07-07 1997-01-21 Fujitsu Ltd 化学的機械研磨後の基板洗浄方法
US5769689A (en) * 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
JPH10106987A (ja) * 1996-09-30 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JPH10102037A (ja) * 1996-10-02 1998-04-21 Kao Corp 研磨材組成物及びこれを用いた基板の製造方法
JPH10309660A (ja) 1997-05-07 1998-11-24 Tokuyama Corp 仕上げ研磨剤
JP3255095B2 (ja) 1997-09-30 2002-02-12 日本電気株式会社 研磨液および研磨方法
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
JPH11162910A (ja) * 1997-11-25 1999-06-18 Sumitomo Chem Co Ltd 半導体装置製造用研磨剤及び研磨方法
JPH11181403A (ja) * 1997-12-18 1999-07-06 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP3877419B2 (ja) 1998-02-03 2007-02-07 三井化学株式会社 有機電界発光素子
US5968238A (en) * 1998-02-18 1999-10-19 Turtle Wax, Inc. Polishing composition including water soluble polishing agent
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
JP4163788B2 (ja) * 1998-06-25 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
JP2000109816A (ja) * 1998-10-05 2000-04-18 Okamoto Machine Tool Works Ltd 研磨剤スラリ−の調製方法
JP2000183003A (ja) * 1998-10-07 2000-06-30 Toshiba Corp 銅系金属用研磨組成物および半導体装置の製造方法
AU1219600A (en) 1998-10-21 2000-05-08 W.R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles
US6293851B1 (en) 1998-11-06 2001-09-25 Beaver Creek Concepts Inc Fixed abrasive finishing method using lubricants
KR20000033394A (ko) * 1998-11-23 2000-06-15 윤종용 Cmp용 연마제 와 그 제조방법
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
KR100472882B1 (ko) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
EP1252247A1 (en) 1999-12-14 2002-10-30 Rodel Holdings, Inc. Polishing compositions for semiconductor substrates

Also Published As

Publication number Publication date
KR20010109071A (ko) 2001-12-08
US20020090894A1 (en) 2002-07-11
US20020034925A1 (en) 2002-03-21
US6656022B2 (en) 2003-12-02
JP3945964B2 (ja) 2007-07-18
KR100483411B1 (ko) 2005-04-15
JP2001342454A (ja) 2001-12-14
KR20040089044A (ko) 2004-10-20
KR100468988B1 (ko) 2005-02-02
US20020004360A1 (en) 2002-01-10
US6656021B2 (en) 2003-12-02
TWI236498B (en) 2005-07-21
US6758872B2 (en) 2004-07-06

Similar Documents

Publication Publication Date Title
SG100632A1 (en) Polishing slurry, polishing method and processes for fabricating semiconductor devices
SG132505A1 (en) Semiconductor device, and manufacturing method thereof
AU4318600A (en) Sic wafer, sic semiconductor device and sic wafer production method
SG100696A1 (en) Semiconductor device and method for manufacturing same
AU7454501A (en) Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
SG117412A1 (en) Semiconductor wafer dividing method
EP1361614B8 (en) Semiconductor device manufacturing method
SG106591A1 (en) Semiconductor wafer dividing method
SG116418A1 (en) Semiconductor wafer grinding method.
LU91078B1 (en) Porous abrasive tool and method for making the same.
GB2373922B (en) CMOS semiconductor device, and method of manufacturing the same
SG118117A1 (en) Semiconductor device and manufacturing method thereof
IL156619A0 (en) Semiconductor device and its manufacturing method
AU2001267880A1 (en) Semiconductor device and method for fabricating the same
AU2003302299A1 (en) Polishing pad and method for manufacturing semiconductor device
SG100686A1 (en) Semiconductor wafer dividing method
EP1310583A4 (en) SILICON CRYSTAL WAFER AND METHOD OF MANUFACTURING THEREOF
AU2002219529A1 (en) Semiconductor device and method for fabricating the same
AU2002302968A1 (en) Semiconductor device, semiconductor layer and production method thereof
GB2393325B (en) Semiconductor device and manufacturing method thereof
AU2001294188A1 (en) Device and method for manufacturing semiconductor
AU4875601A (en) Polishing compound for polishing semiconductor device and method for manufacturing semiconductor device using the same
EP1431425A4 (en) APPARATUS AND METHOD FOR MANUFACTURING SINGLE CRYSTALLINE SEMICONDUCTOR AND MONOCRYSTALLINE INGOT
WO2002011947A3 (en) PROCESS FOR TREATING A SEMICONDUCTOR WAFER BY DOUBLE-SIDED POLISHING
AU2001257346A1 (en) Semiconductor device and method for manufacturing the same