JP7252712B2 - エッチング液 - Google Patents
エッチング液 Download PDFInfo
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- JP7252712B2 JP7252712B2 JP2018043170A JP2018043170A JP7252712B2 JP 7252712 B2 JP7252712 B2 JP 7252712B2 JP 2018043170 A JP2018043170 A JP 2018043170A JP 2018043170 A JP2018043170 A JP 2018043170A JP 7252712 B2 JP7252712 B2 JP 7252712B2
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- etching
- film
- hydroxyl groups
- weight
- etching solution
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- 238000005530 etching Methods 0.000 title claims description 55
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 78
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 31
- 150000003141 primary amines Chemical class 0.000 claims description 29
- 150000005846 sugar alcohols Polymers 0.000 claims description 28
- 235000006408 oxalic acid Nutrition 0.000 claims description 26
- 229910003437 indium oxide Inorganic materials 0.000 claims description 21
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 21
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 claims description 11
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 8
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 8
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 8
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical group OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 5
- UXFQFBNBSPQBJW-UHFFFAOYSA-N 2-amino-2-methylpropane-1,3-diol Chemical compound OCC(N)(C)CO UXFQFBNBSPQBJW-UHFFFAOYSA-N 0.000 claims description 4
- KJJPLEZQSCZCKE-UHFFFAOYSA-N 2-aminopropane-1,3-diol Chemical compound OCC(N)CO KJJPLEZQSCZCKE-UHFFFAOYSA-N 0.000 claims description 4
- 150000007522 mineralic acids Chemical class 0.000 claims description 4
- IOAOAKDONABGPZ-UHFFFAOYSA-N 2-amino-2-ethylpropane-1,3-diol Chemical compound CCC(N)(CO)CO IOAOAKDONABGPZ-UHFFFAOYSA-N 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical compound CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 25
- 239000011521 glass Substances 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 239000000243 solution Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- 150000003839 salts Chemical class 0.000 description 8
- 150000001412 amines Chemical class 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000001556 precipitation Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 150000001298 alcohols Chemical class 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000002518 antifoaming agent Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- KVBGVZZKJNLNJU-UHFFFAOYSA-N naphthalene-2-sulfonic acid Chemical compound C1=CC=CC2=CC(S(=O)(=O)O)=CC=C21 KVBGVZZKJNLNJU-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- MSWZFWKMSRAUBD-IVMDWMLBSA-N 2-amino-2-deoxy-D-glucopyranose Chemical compound N[C@H]1C(O)O[C@H](CO)[C@@H](O)[C@@H]1O MSWZFWKMSRAUBD-IVMDWMLBSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- HYFFNAVAMIJUIP-UHFFFAOYSA-N 2-ethylpropane-1,3-diol Chemical compound CCC(CO)CO HYFFNAVAMIJUIP-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical class OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- MSWZFWKMSRAUBD-UHFFFAOYSA-N beta-D-galactosamine Natural products NC1C(O)OC(CO)C(O)C1O MSWZFWKMSRAUBD-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 150000002169 ethanolamines Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229960002442 glucosamine Drugs 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
- H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Weting (AREA)
- Surface Treatment Of Glass (AREA)
Description
下記表1に示す配合量で各成分を混合し、エッチング液を得た(合計100重量%)。得られたエッチング液について、後述する方法により、耐乾燥性、エッチングレート、残渣除去性、インジウム(In)溶解度を評価した。結果を表1に示す。
1.耐乾燥性
50mlビーカーに、各実施例及び比較例で得られたエッチング液10gを計量し、40℃の恒温炉で24時間保管した。保管後のエッチング液の外観を目視で観察し、以下基準より評価した。
◎:透明粘稠物
〇:透明固形物
×:結晶析出
ガラス基板上に膜厚既知のITO膜を形成した基板のシート抵抗を測定する。このITO膜付きの基板を、処理前のシート抵抗の2倍程度となる時間、各実施例及び比較例で得られたエッチング液(45℃)に浸漬して処理する。処理前後のシート抵抗値及び初期膜厚から処理後のITO膜厚を計算する。処理時間と膜厚変化量からエッチングレートを計算し以下基準より評価した。
H:60nm/分以上
L:60nm/分未満
3-1.ガラス膜上
ガラス基板上にITO膜を形成した基板を、エッチングレートから算出されるジャストエッチング時間の1.4倍の時間、エッチング処理した。水洗、窒素ブロー後、処理後のサンプルを電子顕微鏡にて観察し、エッチング後の残渣を下記基準により評価した。
3-2.有機膜上
ガラス基板上に有機膜(ポリイミド)を形成し、さらにITO膜を形成した基板を、エッチングレートから算出されるジャストエッチング時間の1.4倍の時間、エッチング処理した。水洗、窒素ブロー後、処理後のサンプルを電子顕微鏡にて観察し、エッチング後の残渣を下記基準により評価した。
3-3.窒化ケイ素(SiN)膜上
ガラス基板上に窒化ケイ素(SiN)膜を形成し、さらにITO膜を形成した基板を、エッチングレートから算出されるジャストエッチッグ時間の1.4倍の時間、エッチング処理した。水洗、窒素ブロー後、処理後のサンプルの電子顕微鏡にて観察し、エッチング後の残渣を下記基準により評価した。
◎:非常に少ない
○:少ない
×:多い
各実施例及び比較例で得られたエッチング液を三角フラスコに入れ、その中に酸化インジウムを投入し、還流管を取り付け攪拌しながら4時間煮沸した。煮沸終了後25℃で48時間冷却し、過飽和のインジウム化合物が析出していることを確認した後、ポアサイズ0.2μmのフィルターでろ過した。ろ液を採取し、ろ液中のインジウム濃度をICP発光にて測定し、測定結果を下記基準により評価した。
H:900ppm以上
M:300ppm以上900ppm未満
L:300ppm未満
Claims (6)
- (A)シュウ酸、(B)2個以上の水酸基を有する第1級アミン及び/又は多価アルコール(ただし、多価アルコールを単独で含有する場合は、ジエタノールアミン及びメチルジエタノールアミンを除く)、及び、(C)水を含有し、
酸化インジウム系膜のエッチングに用いられることを特徴とするエッチング液。 - 2個以上の水酸基を有する第1級アミン及び/又は多価アルコール(B)の含有量が1~5重量%である、請求項1に記載のエッチング液。
- 2個以上の水酸基を有する第1級アミン及び/又は多価アルコール(B)が、トリスヒドロキシメチルアミノメタン、2-アミノ-1,3-プロパンジオール、2-アミノ-2-メチル-1,3-プロパンジオールおよび2-アミノ-2-エチル-1,3-プロパンジオールよりなる群から選ばれる少なくとも1種である、請求項1又は2に記載のエッチング液。
- さらに(D)ナフタレンスルホン酸縮合物及び/又はポリビニルピロリドンを含有する、請求項1~3のいずれか1項に記載のエッチング液。
- シュウ酸(A)と2個以上の水酸基を有する第1級アミン及び/又は多価アルコール(B)の含有割合が、重量比で、100:25~25:100である、請求項1~4のいずれか1項に記載のエッチング液。
- さらに(E)無機酸を含有する、請求項1~5のいずれか1項に記載のエッチング液。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017071311 | 2017-03-31 | ||
JP2017071311 | 2017-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018174309A JP2018174309A (ja) | 2018-11-08 |
JP7252712B2 true JP7252712B2 (ja) | 2023-04-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018043170A Active JP7252712B2 (ja) | 2017-03-31 | 2018-03-09 | エッチング液 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20180291269A1 (ja) |
JP (1) | JP7252712B2 (ja) |
CN (1) | CN108695154B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115505389B (zh) * | 2022-08-22 | 2023-04-28 | 福建天甫电子材料有限公司 | 一种ito蚀刻液及其使用方法 |
CN116162460A (zh) * | 2022-12-26 | 2023-05-26 | 湖北兴福电子材料股份有限公司 | 一种防止侵蚀铝的缓冲氧化物蚀刻液 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008032728A1 (fr) | 2006-09-13 | 2008-03-20 | Nagase Chemtex Corporation | Composition de solution d'attaque |
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JP3945964B2 (ja) * | 2000-06-01 | 2007-07-18 | 株式会社ルネサステクノロジ | 研磨剤、研磨方法及び半導体装置の製造方法 |
US20060073997A1 (en) * | 2004-09-30 | 2006-04-06 | Lam Research Corporation | Solutions for cleaning silicon semiconductors or silicon oxides |
EP1879223A4 (en) * | 2005-05-06 | 2009-07-22 | Asahi Glass Co Ltd | COPPER WIRING POLISHING COMPOSITION AND SEMICONDUCTOR INTEGRATED CIRCUIT SURFACE POLISHING METHOD |
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2018
- 2018-03-09 JP JP2018043170A patent/JP7252712B2/ja active Active
- 2018-03-29 US US15/940,354 patent/US20180291269A1/en not_active Abandoned
- 2018-03-29 CN CN201810269618.6A patent/CN108695154B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2008032728A1 (fr) | 2006-09-13 | 2008-03-20 | Nagase Chemtex Corporation | Composition de solution d'attaque |
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CN108695154A (zh) | 2018-10-23 |
CN108695154B (zh) | 2023-09-29 |
JP2018174309A (ja) | 2018-11-08 |
US20180291269A1 (en) | 2018-10-11 |
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