TWI236498B - Abrasive, method for polishing and method for manufacturing semiconductor - Google Patents

Abrasive, method for polishing and method for manufacturing semiconductor Download PDF

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Publication number
TWI236498B
TWI236498B TW090104426A TW90104426A TWI236498B TW I236498 B TWI236498 B TW I236498B TW 090104426 A TW090104426 A TW 090104426A TW 90104426 A TW90104426 A TW 90104426A TW I236498 B TWI236498 B TW I236498B
Authority
TW
Taiwan
Prior art keywords
honing
polishing
abrasive
manufacturing semiconductor
particles
Prior art date
Application number
TW090104426A
Other languages
English (en)
Inventor
Katsuhiro Oota
Akio Saito
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TWI236498B publication Critical patent/TWI236498B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Description

1236498 A8 B8 C8 D8 六、申請專利範圍
(請先閲讀背面之注意事項再填寫本頁W 6 .. —種硏磨方法，其係於硏磨中變化硏磨劑中分散媒 之量、使硏磨劑中以固體方式分散之硏磨粒之分散量變 化，該硏磨粒分散量相對於該硏磨劑全量在1〜5 0重量％ 之範圍變化所成之硏磨方法，其中，該分散媒與前述硏磨 粒形成飽和溶液’該硏磨粒係 NH4C1，NH4C104， NH4HCO3，Ce2 ( SO4) 3，CuCl2，CuS〇4，己二酸，檸檬酸 -水和物，琥珀酸，草酸銨，蔗糖，丙二酸之至少其中任 一者。 7 · —種硏磨方法，其係於硏磨中變化含硏磨粒與分散 媒之硏磨劑的溫度，改變該硏磨粒對該分散媒之溶解度·， 將該硏磨劑中以固體方式分散之該硏磨粒分散量相對於該 硏磨劑全量在1〜50重量％之範圍變化所成之硏磨方法， 其中，該分散媒與前述硏磨粒形成飽和溶液， 該硏磨粒係 NH4C1，NH4C104，nh4hco3，
Ce2 (SO4) 3，CuCh，C11SO4，己二酸，棒檬酸—水和物， 琥珀酸’草酸銨，蔗糖，丙二酸之至少其中任一者。 經濟部智慧財產局員工消費合作社印製 8 ·如申請專利範圍第6或7項之硏磨方法，其中該硏 磨劑係如申請專利範圍第1〜4項中任一種硏磨劑。 9. 一種半導體裝置的製造方法，其特徵爲具有使用如 申請專利範圍第5〜8項中任一項之硏磨方法硏磨半導體裝 置之步驟。 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X；297公釐） -2-
TW090104426A 2000-06-01 2001-02-27 Abrasive, method for polishing and method for manufacturing semiconductor TWI236498B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000164650A JP3945964B2 (ja) 2000-06-01 2000-06-01 研磨剤、研磨方法及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TWI236498B true TWI236498B (en) 2005-07-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW090104426A TWI236498B (en) 2000-06-01 2001-02-27 Abrasive, method for polishing and method for manufacturing semiconductor

Country Status (5)

Country Link
US (3) US6758872B2 (zh)
JP (1) JP3945964B2 (zh)
KR (2) KR100483411B1 (zh)
SG (1) SG100632A1 (zh)
TW (1) TWI236498B (zh)

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TWI672368B (zh) * 2014-09-26 2019-09-21 日商福吉米股份有限公司 研磨用組成物

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Publication number Publication date
KR20010109071A (ko) 2001-12-08
KR100468988B1 (ko) 2005-02-02
KR20040089044A (ko) 2004-10-20
US6758872B2 (en) 2004-07-06
JP3945964B2 (ja) 2007-07-18
US6656021B2 (en) 2003-12-02
US20020004360A1 (en) 2002-01-10
JP2001342454A (ja) 2001-12-14
SG100632A1 (en) 2003-12-26
US6656022B2 (en) 2003-12-02
US20020090894A1 (en) 2002-07-11
US20020034925A1 (en) 2002-03-21
KR100483411B1 (ko) 2005-04-15

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