ATE453698T1 - Methode zum selektiven polieren einer siliziumnitridschicht - Google Patents
Methode zum selektiven polieren einer siliziumnitridschichtInfo
- Publication number
- ATE453698T1 ATE453698T1 AT05256210T AT05256210T ATE453698T1 AT E453698 T1 ATE453698 T1 AT E453698T1 AT 05256210 T AT05256210 T AT 05256210T AT 05256210 T AT05256210 T AT 05256210T AT E453698 T1 ATE453698 T1 AT E453698T1
- Authority
- AT
- Austria
- Prior art keywords
- nitride layer
- silicon nitride
- composition
- polishing
- removal rate
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 5
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 239000006061 abrasive grain Substances 0.000 abstract 2
- 230000002378 acidificating effect Effects 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 2
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 abstract 1
- 231100000989 no adverse effect Toxicity 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004304651A JP4954462B2 (ja) | 2004-10-19 | 2004-10-19 | 窒化シリコン膜選択的研磨用組成物およびそれを用いる研磨方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE453698T1 true ATE453698T1 (de) | 2010-01-15 |
Family
ID=35602813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05256210T ATE453698T1 (de) | 2004-10-19 | 2005-10-05 | Methode zum selektiven polieren einer siliziumnitridschicht |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7217989B2 (de) |
| EP (1) | EP1650278B1 (de) |
| JP (1) | JP4954462B2 (de) |
| KR (1) | KR101153756B1 (de) |
| CN (1) | CN1796482B (de) |
| AT (1) | ATE453698T1 (de) |
| DE (1) | DE602005018586D1 (de) |
| SG (1) | SG121988A1 (de) |
| TW (1) | TWI366225B (de) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| EP2437285A2 (de) * | 2007-03-26 | 2012-04-04 | JSR Corporation | Chemisch-mechanisches Polierverfahren für Halbleitervorrichtung unter Verwendung einer wässrigen Dispersion |
| JPWO2008117593A1 (ja) * | 2007-03-26 | 2010-07-15 | Jsr株式会社 | 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法 |
| KR101396853B1 (ko) | 2007-07-06 | 2014-05-20 | 삼성전자주식회사 | 실리콘 질화물 연마용 슬러리 조성물, 이를 이용한 실리콘질화막의 연마 방법 및 반도체 장치의 제조 방법 |
| US9028572B2 (en) * | 2007-09-21 | 2015-05-12 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| MY147729A (en) * | 2007-09-21 | 2013-01-15 | Cabot Microelectronics Corp | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| KR101678114B1 (ko) * | 2008-09-26 | 2016-11-21 | 로디아 오퍼레이션스 | 화학적 기계적 폴리싱용 연마제 조성물 및 그의 이용 방법 |
| CN102187434A (zh) * | 2008-10-20 | 2011-09-14 | 霓达哈斯股份有限公司 | 用于研磨氮化硅的组合物以及使用所述组合物控制选择比的方法 |
| CN101955731A (zh) * | 2009-07-13 | 2011-01-26 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN102741985B (zh) * | 2010-02-01 | 2015-12-16 | Jsr株式会社 | 化学机械研磨用水系分散体及利用其的化学机械研磨方法 |
| US8497210B2 (en) | 2010-10-04 | 2013-07-30 | International Business Machines Corporation | Shallow trench isolation chemical mechanical planarization |
| CN103484024B (zh) * | 2013-09-13 | 2014-10-15 | 上海新安纳电子科技有限公司 | 一种二氧化硅介电材料用化学机械抛光液及其制备方法 |
| US9583359B2 (en) | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
| CN105369250B (zh) * | 2015-12-16 | 2017-12-08 | 重庆硕奥科技有限公司 | 一种基于纳米二氧化硅的电路板用蚀刻液 |
| CN105463460A (zh) * | 2015-12-16 | 2016-04-06 | 无锡吉进环保科技有限公司 | 一种基于纳米二氧化硅的电路板用蚀刻液的制备方法 |
| JP7041135B2 (ja) | 2016-10-17 | 2022-03-23 | シーエムシー マテリアルズ，インコーポレイティド | 改善されたディッシングおよびパターン選択性を有する酸化物および窒化物選択性のｃｍｐ組成物 |
| US10508221B2 (en) | 2017-09-28 | 2019-12-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them |
| US10584265B2 (en) | 2017-09-28 | 2020-03-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them |
| US10711158B2 (en) | 2017-09-28 | 2020-07-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them |
| US11186748B2 (en) | 2017-09-28 | 2021-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them |
| CN111363550A (zh) * | 2018-12-26 | 2020-07-03 | 上海新阳半导体材料股份有限公司 | 选择性刻蚀液组合物及其制备方法和应用 |
| JP6958774B1 (ja) | 2020-06-30 | 2021-11-02 | Jsr株式会社 | 砥粒の製造方法、化学機械研磨用組成物及び化学機械研磨方法 |
| CN114672252B (zh) * | 2022-04-11 | 2023-11-28 | 宁波日晟新材料有限公司 | 一种无味氮化铝抛光液及其制备方法和应用 |
| CN118256158A (zh) * | 2022-12-28 | 2024-06-28 | 华为技术有限公司 | 一种组合物、平整层及平整化方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3190742B2 (ja) * | 1992-10-12 | 2001-07-23 | 株式会社東芝 | 研磨方法 |
| US6046110A (en) * | 1995-06-08 | 2000-04-04 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing a semiconductor device |
| JP3514908B2 (ja) * | 1995-11-13 | 2004-04-05 | 株式会社東芝 | 研磨剤 |
| JP3230986B2 (ja) * | 1995-11-13 | 2001-11-19 | 株式会社東芝 | ポリッシング方法、半導体装置の製造方法及び半導体製造装置。 |
| EP0786504A3 (de) * | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Politurzusammensetzung |
| US5968239A (en) * | 1996-11-12 | 1999-10-19 | Kabushiki Kaisha Toshiba | Polishing slurry |
| JPH11176773A (ja) | 1997-12-12 | 1999-07-02 | Toshiba Corp | 研磨方法 |
| TW416104B (en) * | 1998-08-28 | 2000-12-21 | Kobe Steel Ltd | Method for reclaiming wafer substrate and polishing solution composition for reclaiming wafer substrate |
| JP2000183003A (ja) * | 1998-10-07 | 2000-06-30 | Toshiba Corp | 銅系金属用研磨組成物および半導体装置の製造方法 |
| JP2001115144A (ja) * | 1999-10-15 | 2001-04-24 | Hitachi Chem Co Ltd | 研磨材、基板の研磨方法及び半導体装置 |
| JP2001187878A (ja) * | 1999-12-28 | 2001-07-10 | Nec Corp | 化学的機械的研磨用スラリー |
| US6355075B1 (en) * | 2000-02-11 | 2002-03-12 | Fujimi Incorporated | Polishing composition |
| JP4439755B2 (ja) * | 2001-03-29 | 2010-03-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いたメモリーハードディスクの製造方法 |
| KR100557600B1 (ko) * | 2001-06-29 | 2006-03-10 | 주식회사 하이닉스반도체 | 나이트라이드 cmp용 슬러리 |
| JP2003170349A (ja) * | 2001-09-27 | 2003-06-17 | Fujimi Inc | 磁気ディスク用基板の研磨用組成物及びそれを用いた研磨方法 |
| JP4083528B2 (ja) * | 2002-10-01 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| KR100627510B1 (ko) | 2002-12-30 | 2006-09-22 | 주식회사 하이닉스반도체 | 나이트라이드용 ｃｍｐ 슬러리 |
| JP4267348B2 (ja) * | 2003-03-05 | 2009-05-27 | 花王株式会社 | 研磨基板の製造方法 |
| JP4401672B2 (ja) | 2003-03-31 | 2010-01-20 | キヤノン株式会社 | 情報処理装置、情報処理方法及びプログラム |
| US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
| US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
-
2004
- 2004-10-19 JP JP2004304651A patent/JP4954462B2/ja active Active
-
2005
- 2005-10-05 AT AT05256210T patent/ATE453698T1/de not_active IP Right Cessation
- 2005-10-05 DE DE602005018586T patent/DE602005018586D1/de active Active
- 2005-10-05 EP EP05256210A patent/EP1650278B1/de active Active
- 2005-10-11 SG SG200506653A patent/SG121988A1/en unknown
- 2005-10-18 TW TW094136344A patent/TWI366225B/zh active
- 2005-10-18 US US11/251,880 patent/US7217989B2/en active Active
- 2005-10-19 KR KR1020050098657A patent/KR101153756B1/ko active IP Right Grant
- 2005-10-19 CN CN2005101161919A patent/CN1796482B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW200703491A (en) | 2007-01-16 |
| KR20060054116A (ko) | 2006-05-22 |
| JP4954462B2 (ja) | 2012-06-13 |
| EP1650278A3 (de) | 2006-10-04 |
| SG121988A1 (en) | 2006-05-26 |
| JP2006120728A (ja) | 2006-05-11 |
| EP1650278B1 (de) | 2009-12-30 |
| US7217989B2 (en) | 2007-05-15 |
| TWI366225B (en) | 2012-06-11 |
| EP1650278A2 (de) | 2006-04-26 |
| CN1796482B (zh) | 2010-06-02 |
| KR101153756B1 (ko) | 2012-06-13 |
| DE602005018586D1 (de) | 2010-02-11 |
| US20060084270A1 (en) | 2006-04-20 |
| CN1796482A (zh) | 2006-07-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |