JP2001339045A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JP2001339045A
JP2001339045A JP2000159543A JP2000159543A JP2001339045A JP 2001339045 A JP2001339045 A JP 2001339045A JP 2000159543 A JP2000159543 A JP 2000159543A JP 2000159543 A JP2000159543 A JP 2000159543A JP 2001339045 A JP2001339045 A JP 2001339045A
Authority
JP
Japan
Prior art keywords
circuit
signal
substrate
control circuit
signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000159543A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001339045A5 (enExample
Inventor
Sukeyuki Miyazaki
祐行 宮▲崎▼
Takekazu Ono
豪一 小野
Koichiro Ishibashi
孝一郎 石橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000159543A priority Critical patent/JP2001339045A/ja
Priority to US09/863,349 priority patent/US6518825B2/en
Publication of JP2001339045A publication Critical patent/JP2001339045A/ja
Priority to US10/321,616 priority patent/US6833750B2/en
Publication of JP2001339045A5 publication Critical patent/JP2001339045A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP2000159543A 2000-05-25 2000-05-25 半導体集積回路装置 Pending JP2001339045A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000159543A JP2001339045A (ja) 2000-05-25 2000-05-25 半導体集積回路装置
US09/863,349 US6518825B2 (en) 2000-05-25 2001-05-24 Semiconductor integrated circuit device
US10/321,616 US6833750B2 (en) 2000-05-25 2002-12-18 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000159543A JP2001339045A (ja) 2000-05-25 2000-05-25 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JP2001339045A true JP2001339045A (ja) 2001-12-07
JP2001339045A5 JP2001339045A5 (enExample) 2004-11-18

Family

ID=18663846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000159543A Pending JP2001339045A (ja) 2000-05-25 2000-05-25 半導体集積回路装置

Country Status (2)

Country Link
US (2) US6518825B2 (enExample)
JP (1) JP2001339045A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007252140A (ja) * 2006-03-17 2007-09-27 Fujitsu Ltd 電源装置の制御回路、電源装置及びその制御方法
JP2012119869A (ja) * 2010-11-30 2012-06-21 Fujitsu Semiconductor Ltd レベルシフト回路及び半導体装置
JP2014007386A (ja) * 2012-05-11 2014-01-16 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
JP2019208340A (ja) * 2018-05-30 2019-12-05 ルネサスエレクトロニクス株式会社 半導体装置

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4090231B2 (ja) * 2001-11-01 2008-05-28 株式会社ルネサステクノロジ 半導体集積回路装置
KR100542398B1 (ko) * 2001-12-04 2006-01-10 주식회사 하이닉스반도체 전압 공급 회로
JP3786608B2 (ja) * 2002-01-28 2006-06-14 株式会社ルネサステクノロジ 半導体集積回路装置
US6753719B2 (en) * 2002-08-26 2004-06-22 Motorola, Inc. System and circuit for controlling well biasing and method thereof
US7642835B1 (en) * 2003-11-12 2010-01-05 Robert Fu System for substrate potential regulation during power-up in integrated circuits
US7250807B1 (en) * 2003-06-05 2007-07-31 National Semiconductor Corporation Threshold scaling circuit that minimizes leakage current
JP4321678B2 (ja) * 2003-08-20 2009-08-26 パナソニック株式会社 半導体集積回路
US9842629B2 (en) 2004-06-25 2017-12-12 Cypress Semiconductor Corporation Memory cell array latchup prevention
US7773442B2 (en) 2004-06-25 2010-08-10 Cypress Semiconductor Corporation Memory cell array latchup prevention
US7202729B2 (en) * 2004-10-21 2007-04-10 Texas Instruments Incorporated Methods and apparatus to bias the backgate of a power switch
US20060132218A1 (en) * 2004-12-20 2006-06-22 Tschanz James W Body biasing methods and circuits
US7535282B2 (en) * 2005-06-07 2009-05-19 Micron Technology, Inc. Dynamic well bias controlled by Vt detector
US7330049B2 (en) * 2006-03-06 2008-02-12 Altera Corporation Adjustable transistor body bias generation circuitry with latch-up prevention
US7355437B2 (en) * 2006-03-06 2008-04-08 Altera Corporation Latch-up prevention circuitry for integrated circuits with transistor body biasing
US7495471B2 (en) * 2006-03-06 2009-02-24 Altera Corporation Adjustable transistor body bias circuitry
KR100817058B1 (ko) * 2006-09-05 2008-03-27 삼성전자주식회사 룩업 테이블을 이용한 바디 바이어싱 제어회로 및 이의바디 바이어싱 제어방법
JP4237221B2 (ja) * 2006-11-20 2009-03-11 エルピーダメモリ株式会社 半導体装置
KR100974210B1 (ko) * 2007-12-07 2010-08-06 주식회사 하이닉스반도체 벌크 전압 디텍터
JP5258490B2 (ja) * 2008-10-02 2013-08-07 ルネサスエレクトロニクス株式会社 半導体集積回路及びそれを用いたｉｃカード
JP2010287272A (ja) * 2009-06-10 2010-12-24 Elpida Memory Inc 半導体装置
JP2011014575A (ja) * 2009-06-30 2011-01-20 Renesas Electronics Corp 半導体集積回路
US9570974B2 (en) * 2010-02-12 2017-02-14 Infineon Technologies Ag High-frequency switching circuit
JP6406926B2 (ja) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 半導体装置
JP2017224978A (ja) * 2016-06-15 2017-12-21 東芝メモリ株式会社 半導体装置
CN107659303A (zh) * 2017-08-31 2018-02-02 晨星半导体股份有限公司 输入输出电路
KR102341260B1 (ko) * 2017-11-22 2021-12-20 삼성전자주식회사 불휘발성 메모리 장치 및 그 소거 방법
US10984871B2 (en) * 2017-11-22 2021-04-20 Samsung Electronics Co., Ltd. Non-volatile memory device and method of erasing the same
JP2019110218A (ja) * 2017-12-19 2019-07-04 ルネサスエレクトロニクス株式会社 半導体装置、センサ端末、及び半導体装置の制御方法
US11262780B1 (en) * 2020-11-12 2022-03-01 Micron Technology, Inc. Back-bias optimization
EP4033661B1 (en) 2020-11-25 2024-01-24 Changxin Memory Technologies, Inc. Control circuit and delay circuit
EP4033312B1 (en) 2020-11-25 2024-08-21 Changxin Memory Technologies, Inc. Control circuit and delay circuit
EP4033664B1 (en) * 2020-11-25 2024-01-10 Changxin Memory Technologies, Inc. Potential generation circuit, inverter, delay circuit, and logic gate circuit
US11681313B2 (en) 2020-11-25 2023-06-20 Changxin Memory Technologies, Inc. Voltage generating circuit, inverter, delay circuit, and logic gate circuit
US12154612B2 (en) * 2022-03-25 2024-11-26 Changxin Memory Technologies, Inc. Control circuit and semiconductor memory
KR20230140036A (ko) 2022-03-29 2023-10-06 삼성전자주식회사 바디 바이어스 전압 생성기 및 이를 포함하는 반도체 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621443A (ja) * 1992-04-17 1994-01-28 Nec Corp 半導体集積回路
JPH0653496A (ja) * 1992-06-02 1994-02-25 Toshiba Corp 半導体装置
JPH07111314A (ja) * 1993-10-14 1995-04-25 Kawasaki Steel Corp 半導体集積回路装置
JPH098645A (ja) * 1995-06-16 1997-01-10 Mitsubishi Electric Corp 半導体装置
JPH11122047A (ja) * 1997-10-14 1999-04-30 Mitsubishi Electric Corp 半導体集積回路装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5341034A (en) * 1993-02-11 1994-08-23 Benchmarq Microelectronics, Inc. Backup battery power controller having channel regions of transistors being biased by power supply or battery
JP3175521B2 (ja) * 1995-01-27 2001-06-11 日本電気株式会社 シリコン・オン・インシュレータ半導体装置及びバイアス電圧発生回路
JP3614546B2 (ja) * 1995-12-27 2005-01-26 富士通株式会社 半導体集積回路
JP3732914B2 (ja) * 1997-02-28 2006-01-11 株式会社ルネサステクノロジ 半導体装置
US6252452B1 (en) * 1998-08-25 2001-06-26 Kabushiki Kaisha Toshiba Semiconductor device
JP2002134739A (ja) * 2000-10-19 2002-05-10 Mitsubishi Electric Corp 半導体装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621443A (ja) * 1992-04-17 1994-01-28 Nec Corp 半導体集積回路
JPH0653496A (ja) * 1992-06-02 1994-02-25 Toshiba Corp 半導体装置
JPH07111314A (ja) * 1993-10-14 1995-04-25 Kawasaki Steel Corp 半導体集積回路装置
JPH098645A (ja) * 1995-06-16 1997-01-10 Mitsubishi Electric Corp 半導体装置
JPH11122047A (ja) * 1997-10-14 1999-04-30 Mitsubishi Electric Corp 半導体集積回路装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007252140A (ja) * 2006-03-17 2007-09-27 Fujitsu Ltd 電源装置の制御回路、電源装置及びその制御方法
JP2012119869A (ja) * 2010-11-30 2012-06-21 Fujitsu Semiconductor Ltd レベルシフト回路及び半導体装置
JP2014007386A (ja) * 2012-05-11 2014-01-16 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
US9337826B2 (en) 2012-05-11 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2016096356A (ja) * 2012-05-11 2016-05-26 株式会社半導体エネルギー研究所 半導体装置
US9991887B2 (en) 2012-05-11 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2019208340A (ja) * 2018-05-30 2019-12-05 ルネサスエレクトロニクス株式会社 半導体装置
JP7282486B2 (ja) 2018-05-30 2023-05-29 ルネサスエレクトロニクス株式会社 半導体システム

Also Published As

Publication number Publication date
US20010046156A1 (en) 2001-11-29
US20030085751A1 (en) 2003-05-08
US6833750B2 (en) 2004-12-21
US6518825B2 (en) 2003-02-11

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