JP2001326289A - 不揮発性メモリおよび半導体装置 - Google Patents
不揮発性メモリおよび半導体装置Info
- Publication number
- JP2001326289A JP2001326289A JP2001063434A JP2001063434A JP2001326289A JP 2001326289 A JP2001326289 A JP 2001326289A JP 2001063434 A JP2001063434 A JP 2001063434A JP 2001063434 A JP2001063434 A JP 2001063434A JP 2001326289 A JP2001326289 A JP 2001326289A
- Authority
- JP
- Japan
- Prior art keywords
- memory
- tft
- nonvolatile memory
- memory cell
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000015654 memory Effects 0.000 title claims abstract description 454
- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000007667 floating Methods 0.000 claims description 41
- 239000011159 matrix material Substances 0.000 claims description 21
- 239000004973 liquid crystal related substance Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 121
- 239000010410 layer Substances 0.000 description 63
- 239000013078 crystal Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 29
- 238000010586 diagram Methods 0.000 description 24
- 238000012937 correction Methods 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 239000012535 impurity Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 18
- 229910021419 crystalline silicon Inorganic materials 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 229910052698 phosphorus Inorganic materials 0.000 description 13
- 239000011574 phosphorus Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000002784 hot electron Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000005984 hydrogenation reaction Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001063434A JP2001326289A (ja) | 2000-03-08 | 2001-03-07 | 不揮発性メモリおよび半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000064223 | 2000-03-08 | ||
| JP2000-64223 | 2000-03-08 | ||
| JP2001063434A JP2001326289A (ja) | 2000-03-08 | 2001-03-07 | 不揮発性メモリおよび半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001326289A true JP2001326289A (ja) | 2001-11-22 |
| JP2001326289A5 JP2001326289A5 (https=) | 2008-04-03 |
Family
ID=26587064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001063434A Withdrawn JP2001326289A (ja) | 2000-03-08 | 2001-03-07 | 不揮発性メモリおよび半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001326289A (https=) |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200377A (ja) * | 2002-12-18 | 2004-07-15 | Semiconductor Energy Lab Co Ltd | 半導体記憶素子、半導体記憶装置及びその作製方法 |
| KR100450754B1 (ko) * | 2002-01-17 | 2004-10-01 | 한국전자통신연구원 | 고휘도 전계 방출 디스플레이 |
| JP2005136416A (ja) * | 2003-10-28 | 2005-05-26 | Samsung Electronics Co Ltd | 不揮発性記憶素子およびその形成方法 |
| JP2005202181A (ja) * | 2004-01-16 | 2005-07-28 | Mitsubishi Electric Corp | 表示装置ドライバ |
| JP2005531934A (ja) * | 2002-07-02 | 2005-10-20 | サンディスク コーポレイション | 複数のゲートレイヤを用いて論理要素を製造する技術 |
| JP2006294711A (ja) * | 2005-04-06 | 2006-10-26 | Toshiba Corp | 不揮発性半導体記憶装置及びその制御方法 |
| US7247357B2 (en) | 2003-06-19 | 2007-07-24 | Hitachi Displays, Ltd. | Image display device |
| JP2007294915A (ja) * | 2006-03-31 | 2007-11-08 | Semiconductor Energy Lab Co Ltd | 不揮発性半導体記憶装置及びその作製方法 |
| JP2007534161A (ja) * | 2003-11-17 | 2007-11-22 | マイクロン テクノロジー、インコーポレイテッド | 極薄シリコンにおけるｎｒｏｍ型フラッシュメモリデバイス |
| WO2007138754A1 (ja) * | 2006-05-31 | 2007-12-06 | Sharp Kabushiki Kaisha | 半導体装置、その製造方法、及び、表示装置 |
| JP2008091849A (ja) * | 2006-09-29 | 2008-04-17 | Polytron Technologies Inc | 発光ダイオード発光装置の平面構造 |
| JP2008244460A (ja) * | 2007-02-27 | 2008-10-09 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| JP2009027161A (ja) * | 2007-07-18 | 2009-02-05 | Hynix Semiconductor Inc | フラッシュメモリ素子の製造方法 |
| CN100468773C (zh) * | 2005-10-21 | 2009-03-11 | 财团法人工业技术研究院 | 显示器用存储单元、像素结构以及存储单元的制造方法 |
| US7504663B2 (en) * | 2004-05-28 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a floating gate electrode that includes a plurality of particles |
| JP2009141144A (ja) * | 2007-12-06 | 2009-06-25 | Sharp Corp | 半導体記憶装置及びその製造方法と駆動方法 |
| US7777270B2 (en) | 2006-08-28 | 2010-08-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacturing the same |
| JP2013051425A (ja) * | 2006-03-31 | 2013-03-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| KR101520284B1 (ko) | 2007-06-25 | 2015-05-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| JP2015536047A (ja) * | 2012-09-28 | 2015-12-17 | シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． | 基板ストレッサ領域を有する分割ゲートメモリセル及びその製造方法 |
| FR3069377A1 (fr) * | 2017-07-21 | 2019-01-25 | Stmicroelectronics (Rousset) Sas | Transistor mos a double blocs de grille a tension de claquage augmentee |
| US10714583B2 (en) | 2017-07-21 | 2020-07-14 | Stmicroelectronics (Rousset) Sas | MOS transistor with reduced hump effect |
| US10797158B2 (en) | 2017-07-21 | 2020-10-06 | Stmicroelectronics (Rousset) Sas | Transistor comprising a lengthened gate |
| JP2023037612A (ja) * | 2021-09-03 | 2023-03-15 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタ基板およびそれを含む表示装置 |
| JP2024035836A (ja) * | 2022-09-02 | 2024-03-14 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタ、電界発光表示装置及び駆動トランジスタ |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0265276A (ja) * | 1988-08-31 | 1990-03-05 | Seiko Epson Corp | 記憶装置 |
| JPH09307010A (ja) * | 1996-03-11 | 1997-11-28 | Ricoh Co Ltd | 半導体記憶装置の製造方法 |
| JPH104193A (ja) * | 1996-04-11 | 1998-01-06 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ，半導体記憶装置並びにそれらの製造方法及び半導体記憶装置の駆動方法 |
| JPH10261725A (ja) * | 1997-03-19 | 1998-09-29 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JPH1187545A (ja) * | 1997-07-08 | 1999-03-30 | Sony Corp | 半導体不揮発性記憶装置およびその製造方法 |
| JPH11214547A (ja) * | 1998-01-26 | 1999-08-06 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
| JPH11214546A (ja) * | 1998-01-29 | 1999-08-06 | Nec Corp | 不揮発性半導体記憶装置およびその製造方法 |
| JPH11297864A (ja) * | 1998-04-14 | 1999-10-29 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
| JP2000003970A (ja) * | 1997-12-05 | 2000-01-07 | Sony Corp | 不揮発性半導体記憶装置およびその書き込み電圧の印加方法 |
| JP2000022094A (ja) * | 1997-08-19 | 2000-01-21 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
-
2001
- 2001-03-07 JP JP2001063434A patent/JP2001326289A/ja not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0265276A (ja) * | 1988-08-31 | 1990-03-05 | Seiko Epson Corp | 記憶装置 |
| JPH09307010A (ja) * | 1996-03-11 | 1997-11-28 | Ricoh Co Ltd | 半導体記憶装置の製造方法 |
| JPH104193A (ja) * | 1996-04-11 | 1998-01-06 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ，半導体記憶装置並びにそれらの製造方法及び半導体記憶装置の駆動方法 |
| JPH10261725A (ja) * | 1997-03-19 | 1998-09-29 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JPH1187545A (ja) * | 1997-07-08 | 1999-03-30 | Sony Corp | 半導体不揮発性記憶装置およびその製造方法 |
| JP2000022094A (ja) * | 1997-08-19 | 2000-01-21 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2000003970A (ja) * | 1997-12-05 | 2000-01-07 | Sony Corp | 不揮発性半導体記憶装置およびその書き込み電圧の印加方法 |
| JPH11214547A (ja) * | 1998-01-26 | 1999-08-06 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
| JPH11214546A (ja) * | 1998-01-29 | 1999-08-06 | Nec Corp | 不揮発性半導体記憶装置およびその製造方法 |
| JPH11297864A (ja) * | 1998-04-14 | 1999-10-29 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
Cited By (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100450754B1 (ko) * | 2002-01-17 | 2004-10-01 | 한국전자통신연구원 | 고휘도 전계 방출 디스플레이 |
| JP2005531934A (ja) * | 2002-07-02 | 2005-10-20 | サンディスク コーポレイション | 複数のゲートレイヤを用いて論理要素を製造する技術 |
| JP2004200377A (ja) * | 2002-12-18 | 2004-07-15 | Semiconductor Energy Lab Co Ltd | 半導体記憶素子、半導体記憶装置及びその作製方法 |
| US7247357B2 (en) | 2003-06-19 | 2007-07-24 | Hitachi Displays, Ltd. | Image display device |
| JP2005136416A (ja) * | 2003-10-28 | 2005-05-26 | Samsung Electronics Co Ltd | 不揮発性記憶素子およびその形成方法 |
| JP2007534161A (ja) * | 2003-11-17 | 2007-11-22 | マイクロン テクノロジー、インコーポレイテッド | 極薄シリコンにおけるｎｒｏｍ型フラッシュメモリデバイス |
| JP2005202181A (ja) * | 2004-01-16 | 2005-07-28 | Mitsubishi Electric Corp | 表示装置ドライバ |
| US7868328B2 (en) | 2004-05-28 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having antenna over thin film integrated circuit |
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