JP7339407B2 - 薄膜トランジスタ基板およびそれを含む表示装置 - Google Patents
薄膜トランジスタ基板およびそれを含む表示装置 Download PDFInfo
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- JP7339407B2 JP7339407B2 JP2022139445A JP2022139445A JP7339407B2 JP 7339407 B2 JP7339407 B2 JP 7339407B2 JP 2022139445 A JP2022139445 A JP 2022139445A JP 2022139445 A JP2022139445 A JP 2022139445A JP 7339407 B2 JP7339407 B2 JP 7339407B2
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- 239000010409 thin film Substances 0.000 title claims description 196
- 239000000758 substrate Substances 0.000 title claims description 64
- 230000000903 blocking effect Effects 0.000 claims description 75
- 239000004065 semiconductor Substances 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 41
- 239000003990 capacitor Substances 0.000 claims description 23
- 229910005555 GaZnO Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 302
- 239000010408 film Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000009975 flexible effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
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- 238000009832 plasma treatment Methods 0.000 description 1
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- 230000002123 temporal effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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Description
111:第1光遮断層
112:第2光遮断層
121:第1バッファ層
122:第2バッファ層
130:第1アクティブ層
230:第2アクティブ層
141:第1ゲート絶縁膜
142:第2ゲート絶縁膜
150:第1ゲート電極
250:第2ゲート電極
161:ソース電極
262:ドレイン電極
710:表示素子
711:第1電極
712:有機発光層
713:第2電極
TFT1:第1薄膜トランジスタ
TFT2:第2薄膜トランジスタ
Claims (19)
- ベース基板上の第1薄膜トランジスタおよび第2薄膜トランジスタを含み、
前記第1薄膜トランジスタは、
前記ベース基板上の第1アクティブ層、および
前記第1アクティブ層と離隔した第1ゲート電極、を含み、
前記第2薄膜トランジスタは、
前記ベース基板上の第2アクティブ層、
前記第2アクティブ層と離隔した第2ゲート電極、および
前記第2アクティブ層と前記第2ゲート電極との間の補助ゲート電極、を含み、
前記第1アクティブ層および前記第2アクティブ層は、一体的に形成されて互いに連結し、
前記補助ゲート電極は、前記第1ゲート電極と一体的に形成され、前記第2アクティブ層および前記第2ゲート電極と離隔していて、
前記第2ゲート電極は、前記補助ゲート電極と少なくとも一部重畳する、薄膜トランジスタ基板。 - 前記補助ゲート電極に前記第1ゲート電極と同じ電圧が印加される、請求項1に記載の薄膜トランジスタ基板。
- 前記第2薄膜トランジスタがターンオン(Turn-On)されるとき、前記第1薄膜トランジスタがターンオン(Turn-On)されるように構成された、請求項1に記載の薄膜トランジスタ基板。
- 前記第2ゲート電極に第2ゲート電圧が印加されると、前記第1ゲート電極に第1ゲート電圧が印加されるように構成された、請求項1に記載の薄膜トランジスタ基板。
- 前記第2アクティブ層が、
チャネル部、
前記チャネル部の一側に接触する第1連結部、および
前記チャネル部の他側に接触する第2連結部、を含み、
前記チャネル部の一部は、前記補助ゲート電極と重畳し、前記チャネル部の他の一部は前記補助ゲート電極と重複しない、請求項1に記載の薄膜トランジスタ基板。 - 前記補助ゲート電極と重畳しない前記チャネル部の前記他の一部が、前記第2ゲート電極と重畳する、請求項5に記載の薄膜トランジスタ基板。
- 前記チャネル部の前記第1連結部側の一部が、前記補助ゲート電極と重畳し、前記第2ゲート電極と重畳しない、請求項5に記載の薄膜トランジスタ基板。
- 前記チャネル部の前記第2連結部側の一部が、前記補助ゲート電極と重畳し、前記第2ゲート電極と重畳しない、請求項5に記載の薄膜トランジスタ基板。
- 前記第1アクティブ層および前記第2アクティブ層が、IGZO(InGaZnO)系酸化物半導体物質、IZO(InZnO)系酸化物半導体物質、IGZTO(InGaZnSnO)系酸化物半導体物質、ITZO(InSnZnO)系酸化物半導体物質、FIZO(FeInZnO)系酸化物半導体物質、ZnO系酸化物半導体物質、SIZO(SiInZnO)系酸化物半導体物質、ZnON(Zn-Oxynitride)系酸化物半導体物質、GZO(GaZnO)系酸化物半導体物質、IGO(InGaO)系酸化物半導体物質およびGZTO(GaZnSnO)系酸化物半導体物質の中の少なくとも1つを含む、請求項1に記載の薄膜トランジスタ基板。
- 前記第1アクティブ層および前記第2アクティブ層のそれぞれが、
第1酸化物半導体層、および
前記第1酸化物半導体層上の第2酸化物半導体層を含む、請求項1に記載の薄膜トランジスタ基板。 - 前記ベース基板上の第1光遮断層、および
前記第1光遮断層上の第2光遮断層を含み、
前記第1光遮断層と前記第2光遮断層とが、互いに離隔して且つ重畳し、
前記第1光遮断層および前記第2光遮断層のいずれか一方が、前記第2アクティブ層と連結し、
前記第1光遮断層および前記第2光遮断層の他方は、前記第2ゲート電極に連結する、請求項1に記載の薄膜トランジスタ基板。 - 前記第1光遮断層と前記第2光遮断層とが、キャパシタを形成する、請求項11に記載の薄膜トランジスタ基板。
- 請求項1~12のいずれか一項に記載の薄膜トランジスタ基板を含む表示装置。
- 前記第1薄膜トランジスタが、発光制御トランジスタであり、
前記第2薄膜トランジスタは、駆動トランジスタである、請求項13に記載の表示装置。 - 前記第1ゲート電極および前記補助ゲート電極に発光制御信号が印加される、請求項13に記載の表示装置。
- 前記第1ゲート電極および前記補助ゲート電極が、発光制御ラインの一部である、請求項13に記載の表示装置。
- 前記ベース基板上の第1光遮断層と前記第1光遮断層上の第2光遮断層との重畳によって、ストレージキャパシタが形成される、請求項13に記載の表示装置。
- 駆動トランジスタ、発光制御トランジスタおよびスイッチングトランジスタをさらに含み、
前記駆動トランジスタのアクティブ層および前記発光制御トランジスタのアクティブ層が、一体化されていて、
前記駆動トランジスタのアクティブ層および前記発光制御トランジスタのアクティブ層は、前記スイッチングトランジスタのアクティブ層と区別された、請求項13に記載の表示装置。 - センシングトランジスタをさらに含み、
前記センシングトランジスタのアクティブ層が、前記駆動トランジスタのアクティブ層および前記発光制御トランジスタのアクティブ層と一体に構成されていて、
前記センシングトランジスタのアクティブ層は、前記スイッチングトランジスタのアクティブ層と区別された、請求項18に記載の表示装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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KR20210117990 | 2021-09-03 | ||
KR10-2021-0117990 | 2021-09-03 | ||
KR1020210194208A KR20230034839A (ko) | 2021-09-03 | 2021-12-31 | 박막 트랜지스터 기판 및 이를 포함하는 표시장치 |
KR10-2021-0194208 | 2021-12-31 |
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JP2023037612A JP2023037612A (ja) | 2023-03-15 |
JP7339407B2 true JP7339407B2 (ja) | 2023-09-05 |
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JP2000058849A (ja) | 1998-08-17 | 2000-02-25 | Nec Corp | 薄膜半導体装置 |
JP2000196094A (ja) | 1998-12-25 | 2000-07-14 | Fujitsu Ltd | 薄膜トランジスタ基板および液晶表示装置 |
JP2001326289A (ja) | 2000-03-08 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 不揮発性メモリおよび半導体装置 |
JP2004253596A (ja) | 2003-02-20 | 2004-09-09 | Nec Corp | 薄膜トランジスタ基板およびその製造方法 |
JP2011082486A (ja) | 2009-10-12 | 2011-04-21 | Samsung Mobile Display Co Ltd | 薄膜トランジスタ及びその製造方法、並びに薄膜トランジスタを備える有機電界発光表示装置 |
US20150123084A1 (en) | 2013-11-05 | 2015-05-07 | Samsung Display Co., Ltd. | Thin film transistor array substrate, organic light-emitting display apparatus and method of manufacturing the thin film transistor array substrate |
WO2017065199A1 (ja) | 2015-10-14 | 2017-04-20 | シャープ株式会社 | 半導体装置およびその製造方法 |
US20200194594A1 (en) | 2018-12-18 | 2020-06-18 | Lg Display Co., Ltd. | Thin-Film Transistor and Display Panel |
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2022
- 2022-08-30 CN CN202211046525.XA patent/CN115768195A/zh active Pending
- 2022-09-01 US US17/901,192 patent/US20230071859A1/en active Pending
- 2022-09-01 JP JP2022139445A patent/JP7339407B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000058849A (ja) | 1998-08-17 | 2000-02-25 | Nec Corp | 薄膜半導体装置 |
JP2000196094A (ja) | 1998-12-25 | 2000-07-14 | Fujitsu Ltd | 薄膜トランジスタ基板および液晶表示装置 |
JP2001326289A (ja) | 2000-03-08 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 不揮発性メモリおよび半導体装置 |
JP2004253596A (ja) | 2003-02-20 | 2004-09-09 | Nec Corp | 薄膜トランジスタ基板およびその製造方法 |
JP2011082486A (ja) | 2009-10-12 | 2011-04-21 | Samsung Mobile Display Co Ltd | 薄膜トランジスタ及びその製造方法、並びに薄膜トランジスタを備える有機電界発光表示装置 |
US20150123084A1 (en) | 2013-11-05 | 2015-05-07 | Samsung Display Co., Ltd. | Thin film transistor array substrate, organic light-emitting display apparatus and method of manufacturing the thin film transistor array substrate |
WO2017065199A1 (ja) | 2015-10-14 | 2017-04-20 | シャープ株式会社 | 半導体装置およびその製造方法 |
US20200194594A1 (en) | 2018-12-18 | 2020-06-18 | Lg Display Co., Ltd. | Thin-Film Transistor and Display Panel |
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US20230071859A1 (en) | 2023-03-09 |
JP2023037612A (ja) | 2023-03-15 |
CN115768195A (zh) | 2023-03-07 |
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