CN112992920A - 包括薄膜晶体管的显示设备及制造该显示设备的方法 - Google Patents

包括薄膜晶体管的显示设备及制造该显示设备的方法 Download PDF

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CN112992920A
CN112992920A CN202011308689.6A CN202011308689A CN112992920A CN 112992920 A CN112992920 A CN 112992920A CN 202011308689 A CN202011308689 A CN 202011308689A CN 112992920 A CN112992920 A CN 112992920A
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electrode
layer
display device
gate
active layer
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洪礼媛
赵光敏
李正贤
李昭珩
申铉秀
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LG Display Co Ltd
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LG Display Co Ltd
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    • H01L29/66007—Multistep manufacturing processes
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    • G—PHYSICS
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
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    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0408—Integration of the drivers onto the display substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275—Details of drivers for data electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
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Abstract

公开了一种显示设备及制造该显示设备的方法。该显示设备，包括：基板；基板上的遮光层和信号线；遮光层和信号线上的缓冲层；缓冲层上的有源层；有源层上的栅极绝缘膜；栅极绝缘膜上的栅极电极；栅极电极上的保护层；保护层上的显示器件的第一电极；和配置成将信号线和有源层彼此连接的连接电极，其中遮光层和信号线设置在同一层，并且连接电极和第一电极由同一材料形成。因此，对于显示设备的制造工序来说，不必提供用于形成遮光层的额外掩模工序。此外，在显示设备的制造工序中，不必执行用于形成薄膜晶体管的源极电极和漏极电极的额外掩模工序。因而，可提供具有简化结构的显示设备，以及利用简化的工序制造显示设备的方法。

Description

包括薄膜晶体管的显示设备及制造该显示设备的方法
相关申请的交叉引用
本申请要求享有于2019年12月12日提交的韩国专利申请第10-2019-0165361号的权益，通过引用将该专利申请整体并入于此，如同在此完全阐述一样。
技术领域
本公开内容涉及一种显示设备及制造该显示设备的方法。更详细地，本公开内容涉及一种能够简化结构和制造工序的显示设备及制造该显示设备的方法。
背景技术
在屏幕上显示各种信息的显示设备是其中融合信息通信领域的核心技术的技术密集型设备。近来，显示设备已发展为实现薄外形、轻重量、便携性以及高性能。显示设备的典型示例可以是液晶显示(LCD)装置和有机发光二极管显示(OLED)装置。
一般来说，执行数次使用光学掩模的掩模工序来制造显示设备。每个掩模工序需要清洗、曝光、显影和蚀刻步骤等。因此，每额外执行一个掩模工序，会导致制造时间和成本的增加，而且会导致缺陷的可能性和缺陷率的增加。结果，成品率降低。
发明内容
鉴于上述问题进行了本公开内容，本公开内容的一个目的是提供一种能够简化结构和制造工序的显示设备及制造该显示设备的方法。
本公开内容的另一个目的是提供一种制造显示设备的方法和由该方法制造的显示设备，该方法通过省略形成薄膜晶体管的源极电极和漏极电极的工序，有利于简化结构和制造工序。
根据本公开内容的一个方面，可通过提供一种显示设备实现上述目的和其他目的，所述显示设备包括：基板；所述基板上的遮光层和信号线；所述遮光层和所述信号线上的缓冲层；所述缓冲层上的有源层；所述有源层上的栅极绝缘膜；所述栅极绝缘膜上的栅极电极；所述栅极电极上的保护层；所述保护层上的显示器件的第一电极；和配置成将所述信号线和所述有源层彼此连接的连接电极，其中所述遮光层和所述信号线可设置在同一层，并且所述连接电极和所述第一电极可由同一材料形成。
所述连接电极可与所述第一电极设置在同一层。
所述遮光层可由与所述信号线相同的材料形成。
所述信号线可包括数据线和驱动电源线中至少之一。
所述遮光层可与所述信号线连接。
所述遮光层和所述信号线可形成为一体。
所述栅极绝缘膜可设置在包括所述有源层的上表面在内的所述基板的整个上表面上。
所述有源层可设置在所述栅极电极与所述基板之间。
所述有源层可包括氧化物半导体材料。
所述有源层可包括：所述缓冲层上的第一氧化物半导体层；和所述第一氧化物半导体层上的第二氧化物半导体层。
所述显示设备可进一步包括设置在所述第一电极上的发光层。
所述显示设备可进一步包括与所述第一电极连接的电容器，其中所述电容器的任意一个电极与所述遮光层形成为一体。
所述第一电极可与所述遮光层和所述有源层直接连接。
所述显示设备可进一步包括设置在所述第一电极上的液晶层。
根据本公开内容的另一个方面，提供了一种制造显示设备的方法，包括：在基板上形成遮光层和信号线；在所述遮光层和所述信号线上形成缓冲层；在所述缓冲层上形成有源层；在所述有源层上形成栅极绝缘膜；在所述栅极绝缘膜上形成栅极电极；通过使用所述栅极电极作为掩模给所述有源层选择性地提供导电性，以在所述有源层中选择性地实现导电区域；在所述栅极电极上形成保护层；在所述保护层上形成显示器件的第一电极；和形成连接电极，所述连接电极配置成将所述信号线和所述有源层彼此连接，其中使用同一材料通过同一工序制造所述遮光层和所述信号线，并且使用同一材料通过同一工序制造所述连接电极和所述第一电极。
可通过掺杂工序执行在所述有源层中选择性地实现导电区域的步骤。
所述连接电极可形成在穿透所述保护层、所述栅极绝缘膜和所述缓冲层的每一个的一些部分的接触孔的至少一些部分中。
所述第一电极可延伸到穿透所述保护层、所述栅极绝缘膜和所述缓冲层的每一个的一些部分的接触孔的至少一些部分，并且所述第一电极可与所述遮光层和所述有源层直接连接。
附图说明
将从下面结合附图的详细描述更清楚地理解本公开内容的上述和其他的目的、特征和其他优点。在附图中：
图1是图解根据本公开内容一个实施方式的显示设备的示意图；
图2是图1的任意一个像素的电路图；
图3是图解图2的像素的平面图；
图4是沿图3的线I-I’截取的剖面图；
图5是沿图3的线II-II’截取的剖面图；
图6是图解根据本公开内容另一个实施方式的显示设备的像素的剖面图；
图7是图解根据本公开内容另一个实施方式的显示设备的像素的剖面图；
图8是图解根据本公开内容另一个实施方式的显示设备的像素的平面图；
图9是沿图8的线III-III’截取的剖面图；
图10是根据本公开内容另一个实施方式的显示设备的任意一个像素的电路图；
图11是根据本公开内容另一个实施方式的显示设备的任意一个像素的电路图；
图12是根据本公开内容另一个实施方式的显示设备的任意一个像素的电路图；
图13是图解图12的像素的平面图；
图14是沿图13的线IV-IV’截取的剖面图；
图15是沿图13的线V-V’截取的剖面图；
图16是图解根据本公开内容另一个实施方式的显示设备的像素的平面图；
图17是沿图16的线VI-VI’截取的剖面图；
图18A至图18G是图解制造根据本公开内容一个实施方式的显示设备的方法的剖面图。
具体实施方式
将通过参照附图描述的下列实施方式阐明本公开内容的优点和特征及其实现方法。然而，本公开内容可以以不同的形式实施，不应解释为限于在此列出的实施方式。而是，提供这些实施方式是为了使该公开内容全面和完整，并将本公开内容的范围充分地传递给本领域技术人员。此外，本公开内容仅由权利要求的范围限定。
为了描述本公开内容的实施方式而在附图中公开的形状、尺寸、比例、角度和数量仅仅是示例，因而本公开内容不限于图示的细节。相似的参考标记通篇表示相似的元件。在下面的描述中，当确定对相关的已知功能或构造的详细描述会不必要地使本公开内容的重点模糊不清时，将省略该详细描述。
在本申请中使用“包括”、“具有”和“包含”描述的情况下，可添加另外的部分，除非使用了“仅”。单数形式的术语可包括复数形式，除非有相反指示。
在解释一要素时，尽管没有明确说明，但该要素应解释为包含误差范围。
在描述位置关系时，例如，当位置关系被描述为“在……上”、“在……上方”、“在……下方”、“在……之下”和“在……之后”时，可包括之间不接触的情况，除非使用了“正好”或“直接”。
如果提到第一元件位于第二元件“上”，则不意味着在图中第一元件必然位于第二元件上。所涉及目标的上部和下部可根据目标的定位而变化。因此，在第一元件位于第二元件“上”的情况包括在图中或实际构造中第一元件位于第二元件“下方”的情况以及第一元件位于第二元件“上方”的情况。
在描述时间关系时，例如，当时间顺序被描述为“在……之后”、“随后”、“接着”和“在……之前”时，可包括不连续的情况，除非使用了“正好”或“直接”。
将理解到，尽管在此可使用术语“第一”、“第二”等来描述各种元件，但这些元件不应被这些术语限制。这些术语仅仅是用来将元件彼此区分开。例如，在不背离本公开内容的范围的情况下，第一元件可能被称为第二元件，相似地，第二元件可能被称为第一元件。术语“第一水平轴方向”、“第二水平轴方向”和“垂直轴方向”不应仅基于其中各个方向彼此垂直的几何关系进行解释，其可指在本公开内容的部件能够在功能上操作的范围内具有更宽指向的方向。
应当理解，术语“至少一个”包括与任一个项目相关的所有组合。例如，“第一要素、第二要素和第三要素中的至少一个”可包括选自第一要素、第二要素和第三要素中的两个或更多个要素的所有组合以及第一要素、第二要素和第三要素的每一个。
如所属领域技术人员能够充分理解，本公开内容各实施方式的特征可彼此部分或整体地结合或组合，并且可在技术上彼此进行各种互操作和驱动。本公开内容的实施方式可彼此独立实施，或者以相互依赖的关系共同实施。
在附图中，相同或相似的部分由相同的参考标记表示，尽管它们在不同的附图中描绘。
在本公开内容的实施方式中，为了便于说明，彼此区分开源极电极和漏极电极。然而，可互换地使用源极电极和漏极电极。因而，源极电极可以是漏极电极，漏极电极可以是源极电极。此外，本公开内容任意一个实施方式中的源极电极可以是本公开内容其他实施方式中的漏极电极，并且本公开内容任意一个实施方式中的漏极电极可以是本公开内容其他实施方式中的源极电极。
在本公开内容的一个或多个实施方式中，为便于说明，源极区域与源极电极区分开，漏极区域与漏极电极区分开。然而，本公开内容的实施方式不限于该结构。例如，源极区域可以是源极电极，漏极区域可以是漏极电极。此外，源极区域可以是漏极电极，漏极区域可以是源极电极。
图1是图解根据本公开内容一个实施方式的显示设备100的示意图。
如图1中所示，根据本公开内容一个实施方式的显示设备100包括显示面板110、栅极驱动器120、数据驱动器130和控制器140。
显示面板110包括栅极线GL和数据线DL、以及布置在栅极线GL和数据线DL的交叉部分处的像素P。像素P包括显示器件710、和配置成驱动显示器件710的像素驱动器PDC。通过驱动像素P在显示面板110上显示图像。
控制器140控制栅极驱动器120和数据驱动器130。
控制器140通过使用从外部系统(未示出)提供的垂直/水平同步信号和时钟信号输出用于控制栅极驱动器120的栅极控制信号GCS和用于控制数据驱动器130的数据控制信号DCS。此外，控制器140采样从外部系统提供的输入视频数据，然后重新排列采样的视频数据，并且将重新排列的数字视频数据RGB提供至数据驱动器130。
栅极控制信号GCS包括栅极起始脉冲(GSP)、栅极移位时钟(GSC)、栅极输出使能信号(GOE)、启动信号(Vst)和栅极时钟(GCLK)。此外，栅极控制信号GCS中可包括用于控制移位寄存器的控制信号。
数据控制信号DCS包括源极起始脉冲(SSP)、源极移位时钟信号(SSC)、源极输出使能信号(SOE)和极性控制信号(POL)。
数据驱动器130给显示面板110的数据线DL提供数据电压。详细地说，数据驱动器130将从控制器140提供的视频数据RGB转换为数据电压，并且将数据电压提供至数据线DL。
栅极驱动器120在1帧周期给栅极线GL顺序地提供栅极脉冲(GP)。在此，“1帧”表示通过使用显示面板110输出图像的时段。此外，栅极驱动器120在1帧的其中不提供栅极脉冲(GP)的其余时段给栅极线GL提供用于使开关器件截止的栅极截止信号。下文中，栅极脉冲(GP)和栅极截止信号(Goff)统称为扫描信号SS。
根据本公开内容的一个实施方式，栅极驱动器120可设置在显示面板110上。将栅极驱动器120直接设置在显示面板110上的结构可被称为面板内栅极(GIP)结构。
图2是图1的任意一个像素P的电路图，图3是图解图2的像素P的平面图，图4是沿图3的线I-I’截取的剖面图。
参照图2、图3和图4，根据本公开内容一个实施方式的显示设备100可包括基板210、基板210上的像素驱动器PDC、和与像素驱动器PDC连接的显示器件710(或发光器件)。像素驱动器PDC包括薄膜晶体管TR1、TR2。
图2的电路图对应于显示设备100中的一个像素P的等效电路图，显示设备100包括用作发光器件710的有机发光二极管(OLED)。因此，根据本公开内容一个实施方式的显示设备100是有机发光二极管(OLED)显示设备。
图2的像素驱动器PDC包括对应于开关晶体管的第一薄膜晶体管TR1和对应于驱动晶体管的第二薄膜晶体管TR2。
第一薄膜晶体管TR1与栅极线GL和数据线DL连接，并且第一薄膜晶体管TR1通过经由栅极线GL提供的扫描信号SS导通或截止。
数据线DL给像素驱动器PDC提供数据电压Vdata，第一薄膜晶体管TR1控制数据电压Vdata的施加。
驱动电源线PL给显示器件710提供驱动电压Vdd，第二薄膜晶体管TR2控制驱动电压Vdd。在此，驱动电压Vdd是用于驱动对应于显示器件710的有机发光二极管(OLED)的像素驱动电压。
数据线DL和驱动电源线PL是用于传输信号的线。因而，根据本公开内容的一个实施方式，数据线DL和驱动电源线PL可被称为信号线。此外，栅极线GL传输信号，由此栅极线GL也可被称为信号线。
当第一薄膜晶体管TR1导通时，通过数据线DL提供的数据电压Vdata被提供至与显示器件710连接的第二薄膜晶体管TR2的栅极电极G2。数据电压Vdata被充在设置于第二薄膜晶体管TR2的源极电极S2和栅极电极G2之间的第一电容器C1中。第一电容器C1对应于存储电容器(Cst)。
根据数据电压Vdata控制通过第二薄膜晶体管TR2提供至与显示器件710对应的有机发光二极管(OLED)的电流量，由此可控制从显示器件710发射的光的灰度级。
参照图4，显示设备100包括基板210；基板210上的遮光层LS1、LS2和信号线DL、PL；遮光层LS1、LS2和信号线DL、PL上的缓冲层220；缓冲层220上的有源层A1、A2；有源层A1、A2上的栅极绝缘膜230；栅极绝缘膜230上的栅极电极G1、G2；栅极电极G1、G2上的保护层250；以及设置在保护层250上的显示器件710的第一电极711。在图4所示的显示设备100中，显示器件710的第一电极711对应于像素电极。
基板210可由玻璃或塑料形成。基板210可由具有柔性的塑料，例如聚酰亚胺(PI)形成。
遮光层LS1、LS2和信号线DL、PL设置在基板210上。
遮光层LS1、LS2具有遮光特性。遮光层LS1、LS2由能够阻挡光的材料，例如金属材料形成。遮光层LS1、LS2防止外部提供的入射光并且保护有源层A1、A2。
根据本公开内容的一个实施方式，信号线可包括数据线DL和驱动电源线PL中至少之一。参照图4，对应于信号线的数据线DL和驱动电源线PL可与遮光层LS1、LS2设置在同一层。
遮光层LS1、LS2可由与信号线DL、PL相同的材料形成。遮光层LS1、LS2和信号线DL、PL可通过同一工序制造。
参照图4，第一电容器C1的第一电容器电极C11设置在基板210上。第一电容器C1的第一电容器电极C11可与遮光层LS1、LS2设置在同一层，并且可由与遮光层LS1、LS2相同的材料形成。
此外，第一电容器C1的第一电容器电极C11可与遮光层形成一体。例如，第一电容器C1的第一电容器电极C11可与第二遮光层LS2形成一体。
在图4中，遮光层LS1、LS2与信号线DL、PL分隔开，然而，不限于该结构。例如，遮光层LS1、LS2可与信号线DL、PL连接。
缓冲层220设置在遮光层LS1、LS2和信号线DL、PL上。缓冲层220由绝缘材料形成，并且缓冲层220保护有源层A1、A2免受外部提供的湿气或氧气影响。缓冲层220可由绝缘材料，例如氧化硅或氮化硅形成。
第一薄膜晶体管TR1和第二薄膜晶体管TR2的有源层A1、A2设置在缓冲层220上。第一薄膜晶体管TR1的有源层A1的至少一些部分可与第一遮光层LS1重叠。此外，第二薄膜晶体管TR2的有源层A2的至少一些部分可与第二遮光层LS2重叠。
根据本公开内容的一个实施方式，有源层A1、A2可包括氧化物半导体材料。例如，有源层A1、A2可包括IZO(InZnO)类氧化物半导体、IGO(InGaO)类氧化物半导体、GO(GaO)类氧化物半导体、ITO(InSnO)类氧化物半导体、IGZO(InGaZnO)类氧化物半导体、IGTO(InGaSnO)类氧化物半导体、IGZTO(InGaZnSnO)类氧化物半导体、GZTO(GaZnSnO)类氧化物半导体、GZO(GaZnO)类氧化物半导体、和ITZO(InSnZnO)类氧化物半导体之中的至少一种。然而，本公开内容的一个实施方式不限于上述材料。有源层A1、A2可由本领域人员通常已知的其他氧化物半导体材料形成。
根据本公开内容的一个实施方式，有源层A1、A2可包括在同一层设置并且彼此分隔开的第一有源层A1和第二有源层A2。
第一有源层A1用作第一薄膜晶体管TR1的有源层，并且第二有源层A2用作第二薄膜晶体管TR2的有源层。
参照图4，栅极绝缘膜230设置在有源层A1、A2上。栅极绝缘膜230具有绝缘特性。栅极绝缘膜230可与栅极电极G1、G2一起被图案化，或者不被图案化。
根据本公开内容的一个实施方式，如图4中所示，栅极绝缘膜230可设置在包括有源层A1、A2的上表面在内的基板210的整个上表面上。在这种情况下，栅极绝缘膜230不被图案化。
栅极电极G1、G2设置在栅极绝缘膜230上。栅极电极G1、G2可以是从栅极线GL延伸的部分，或者可以是栅极线GL的一些部分。栅极电极G1、G2可包括诸如铝或铝合金之类的铝类金属、诸如银(Ag)或银合金之类的银类金属、诸如铜(Cu)或铜合金之类的铜类金属、诸如钼或钼合金之类的钼类金属、铬(Cr)、钽(Ta)、钕(Nd)和钛(Ti)之中的至少一种。栅极电极G1、G2可具有多层结构，多层结构包括具有不同物理特性的至少两层。
通过使用栅极电极G1、G2作为掩模的选择性导电化工序，有源层A1、A2的一些区域被导电化，因而成为导电区域。在本公开内容的实施方式中，“导电化”是指“提供导电性”。
有源层A1、A2的与栅极电极G1、G2重叠的区域未被提供导电性，因而不会成为导电区域，而是成为沟道区域31。有源层A1、A2的不与栅极电极G1、G2重叠的部分区域被提供导电性，因而成为导电区域32和33。通常，导电区域32和33形成在沟道区域31的两侧。
根据本公开内容的一个实施方式，可通过使用掺杂剂的掺杂工序给有源层A1、A2的一些区域提供导电性，因而成为导电区域。在这种情况下，被掺杂的区域成为导电区域，有源层A1、A2的部分区域可经由栅极绝缘膜230被掺杂掺杂剂。因而，尽管有源层A1、A2未从栅极绝缘膜230暴露到外部，但对有源层A1、A2的选择性掺杂也是可能的。根据本公开内容的一个实施方式，可不将栅极绝缘膜230图案化。
导电区域32和33中的任意一个成为源极区域32，另一个成为漏极区域33。源极区域32用作与源极电极S1、S2连接的源极连接区域，或者源极区域32本身用作源极电极S1、S2。漏极区域33用作与漏极电极D1、D2连接的漏极连接区域，或者漏极区域33本身用作漏极电极D1、D2。
根据本公开内容的一个实施方式，为了便于说明，源极区域32和漏极区域33彼此区分开。然而，源极区域32和漏极区域33可互换地使用。根据电压，源极区域32成为漏极区域33，漏极区域33成为源极区域32。此外，源极区域32成为源极电极S1、S2或漏极电极D1、D2，漏极区域33成为漏极电极D1、D2或源极电极S1、S2。
为了便于说明，根据本公开内容的一个实施方式，源极区域32被称为源极电极S1、S2，漏极区域33被称为漏极电极D1、D2。
根据本公开内容的一个实施方式，导电区域32和33的一些部分用作电容器电极。例如，参照图4，第一有源层A1的导电区域32和33中的漏极连接区域33的一些部分可用作第一电容器C1的第二电容器电极C12。第一电容器C1的第二电容器电极C12与第一电容器电极C11重叠，由此形成第一电容器C1。
参照图4，第一电容器C1的任意一个电极C11可与第二遮光层LS2形成一体，第一电容器C1的另一个电极C12可与第一有源层A1形成一体。
参照图4，钝化层240设置在栅极电极G1、G2上。钝化层240保护有源层A1、A2和栅极电极G1、G2。
通常，在钝化层240上设置源极电极和漏极电极。然而，根据本公开内容的一个实施方式，在钝化层240上未设置额外的源极电极和漏极电极。因而，根据本公开内容的一个实施方式，可省略用于形成源极电极和漏极电极的图案化工序。结果，可简化显示设备100的制造工序。
保护层250设置在钝化层240上。保护层250设置成将栅极电极G1、G2的上表面平坦化，并且保护像素驱动器PDC，由此保护层250可被称为平坦化层。
参照图4，显示器件710设置在保护层250上。详细地说，显示器件710的第一电极711设置在钝化层240上，发光层712和第二电极713顺序地设置在第一电极711上，由此形成显示器件710。在图4中，第一电极711是像素电极，第二电极713是公共电极。
显示器件710的第一电极711通过接触孔CH2与第二有源层A2和任意一个遮光层电连接。详细地说，第一电极711通过形成在保护层250、钝化层240、栅极绝缘膜230和缓冲层220中的第二接触孔CH2与第二遮光层LS2接触，并且还与第二有源层A2的源极区域32接触。根据本公开内容的一个实施方式，第二有源层A2的源极区域32用作第二源极电极S2。因而，第一电极711可与第二薄膜晶体管TR2的源极电极S2直接接触。此外，第二遮光层LS2一些部分可用作第一电容器电极C11。因而，第二源极电极S2和第一电容器电极C11通过位于第二接触孔CH2中的第一电极711彼此连接。
此外，连接电极BR1、BR2、BR3设置在保护层250上。
连接电极BR1、BR2、BR3由与第一电极711相同的材料形成。此外，连接电极BR1、BR2、BR3和第一电极711设置在同一层。连接电极BR1、BR2、BR3和第一电极711可通过同一工序制造。
连接电极BR1、BR3设置成将信号线DL、PL与有源层A1、A2连接。详细地说，第一连接电极BR1将驱动电源线PL与第二有源层A2连接。设置第一接触孔CH1，以将驱动电源线PL和第二有源层A2彼此连接，并且在第一接触孔CH1中形成第一连接电极BR1。参照图4，第一连接电极BR1与驱动电源线PL接触，并且同时还与第二有源层A2的漏极区域33接触。根据本公开内容的一个实施方式，第二有源层A2的漏极区域33用作第二漏极电极D2。因而，第一连接电极BR1设置成将驱动电源线PL与第二薄膜晶体管TR2的漏极电极D2连接。
第三连接电极BR3设置成将数据线DL与第一有源层A1连接。为了数据线DL与第一有源层A1之间的连接，设置第四接触孔CH4。参照图4，第三连接电极BR3与数据线DL接触，并且同时还与第一有源层A1的源极区域32接触。根据本公开内容的一个实施方式，第一有源层A1的源极区域32用作第一源极电极S1。因而，第三连接电极BR3设置成将数据线DL与第一薄膜晶体管TR1的源极电极S1连接。
此外，第二连接电极BR2将第二栅极电极G2与第一有源层A1连接。设置第三接触孔CH3，以将第二栅极电极G2与第一有源层A1连接。参照图4，第二连接电极BR2与第二栅极电极G2接触，并且同时还与第一有源层A1的漏极区域33接触。根据本公开内容的一个实施方式，第一有源层A1的漏极区域33用作第一漏极电极D1，并且与第一电容器电极C11重叠的一些部分用作第二电容器电极C12。因而，第二连接电极BR2设置成将第一薄膜晶体管TR1的漏极电极D1与第二栅极电极G2连接并且同时将第二电容器电极C12与第二栅极电极G2连接。
堤层750设置在第一电极711的边缘上。堤层750限定发光器件710的发光区域。
发光层712设置在第一电极711上。在此，发光层712是包括有机材料的有机发光层。第二电极713设置在发光层712上。因此，可完成显示器件710。
图4中所示的显示器件710对应于有机发光二极管(OLED)。因而，根据本公开内容一个实施方式的显示设备100对应于有机发光二极管(OLED)显示设备。
根据本公开内容的一个实施方式，薄膜晶体管TR1、TR2由有源层A1、A2和栅极电极G1、G2形成。薄膜晶体管TR1、TR2通过使用连接电极BR1、BR3与信号线PL、DL连接。
在第一薄膜晶体管TR1中，第一有源层A1的源极区域32成为源极电极S1，漏极区域33成为漏极电极D1。在第二薄膜晶体管TR2中，第二有源层A2的源极区域32成为源极电极S2，漏极区域33成为漏极电极D2。
如图2和图4中所示，第一薄膜晶体管TR1用作开关晶体管，开关晶体管配置成控制施加至像素驱动器PDC的数据电压Vdata。第二薄膜晶体管TR2用作驱动晶体管，驱动晶体管配置成控制施加至显示器件710的驱动电压Vdd。
根据本公开内容的一个实施方式，如图4中所示，有源层A1、A2设置在栅极电极G1、G2与基板210之间。如图4中所示，当基板210是底部时，其中栅极电极G1、G2设置在有源层A1、A2上方的薄膜晶体管的结构被称为顶栅结构。
另外，与顶栅结构相对，其中栅极电极G1、G2设置在有源层A1、A2下方的薄膜晶体管的结构被称为底栅结构。
在底栅结构的薄膜晶体管的情况下，在栅极电极与源极电极之间或者在栅极电极与漏极电极之间产生电容。因而，为了导通薄膜晶体管，与顶栅结构相比，必须对底栅结构施加相对高的电压，由此具有功耗较大的缺点。
另外，与底栅结构相比，顶栅结构的薄膜晶体管具有功耗相对较小的优点。然而，在顶栅结构的情况下，具有制造工序的多层结构和薄膜晶体管的尺寸较大的缺点。
然而，根据本公开内容的一个实施方式，有源层A1、A2可通过使用连接电极BR1、BR3与信号线PL、DL接触，而不用形成额外的源极电极和漏极电极。因此，根据本公开内容的一个实施方式，可减少用于形成薄膜晶体管的步骤数量，还可减少沉积的层数量，由此减少接触孔的数量，从而降低制造成本并减小薄膜晶体管的占据尺寸。
根据本公开内容的一个实施方式，可提高显示设备100的开口率。
图5是沿图3的线II-II’截取的剖面图。
参照图5，第一遮光层(LS1)通过使用第四连接电极BR4与第一栅极电极G1连接。设置第四接触孔CH4，以将第一遮光层LS1与第一栅极电极G1连接。
根据第一遮光层LS1与第一栅极电极G1连接，可防止第一遮光层LS1处于不稳定的浮置状态。此外，根据第一遮光层LS1与第一栅极电极G1连接，其可产生当在第一有源层A1的两侧设置栅极电极时发生的效果，由此可增加第一薄膜晶体管的导通电流。
图6是图解根据本公开内容另一个实施方式的显示设备200的像素的剖面图。
在图6所示的显示设备200中，有源层A1、A2具有多层结构。参照图6，有源层A1、A2包括缓冲层220上的第一氧化物半导体层A11、A21；以及第一氧化物半导体层A11、A21上的第二氧化物半导体层A12、A22。更详细地说，第一有源层A1包括缓冲层220上的第一氧化物半导体层A11、以及第一氧化物半导体层A11上的第二氧化物半导体层A12。第二有源层A2包括缓冲层220上的第一氧化物半导体层A21、以及第一氧化物半导体层A21上的第二氧化物半导体层A22。
根据本公开内容的一个实施方式，第一氧化物半导体层A11、A21用作配置成支撑第二氧化物半导体层A12、A22的支撑层，第二氧化物半导体层A12、A22用作沟道层。通常，有源层A1、A2的沟道设置在第二氧化物半导体层A12、A22中。
为了提高膜稳定性，用作支撑层的第一氧化物半导体层A11、A21可包括镓(Ga)，其中镓(Ga)与氧形成稳定键合，由此第一氧化物半导体层A11、A21具有优良的膜稳定性。根据本公开内容的一个实施方式，第一氧化物半导体层A11、A21可包括IGZO(InGaZnO)类氧化物半导体材料、IGO(InGaO)类氧化物半导体材料、IGTO(InGaSnO)类氧化物半导体材料、IGZTO(InGaZnSnO)类氧化物半导体材料、GZTO(GaZnSnO)类氧化物半导体材料、GZO(GaZnO)类氧化物半导体材料、和GO(GaO)类氧化物半导体材料之中的至少一种。然而，本公开内容的一个实施方式不限于上述材料。第一氧化物半导体层A11、A21可由本领域人员通常已知的其他氧化物半导体材料形成。
第二氧化物半导体层A12、A22可包括IZO(InZnO)类氧化物半导体、IGO(InGaO)类氧化物半导体、ITO(InSnO)类氧化物半导体、IGZO(InGaZnO)类氧化物半导体、IGZTO(InGaZnSnO)类氧化物半导体、GZTO(GaZnSnO)类氧化物半导体、GZO(GaZnO)类氧化物半导体、和ITZO(InSnZnO)类氧化物半导体之中的至少一种。然而，本公开内容的一个实施方式不限于上述材料。第二氧化物半导体层A12、A22可由本领域人员通常已知的其他氧化物半导体材料形成。
第二氧化物半导体层A12、A22具有比第一氧化物半导体层A11、A21大的电特性，并且第一氧化物半导体层A11、A21相较于第二氧化物半导体层A12、A22可具有更大的膜稳定性和对蚀刻更大的耐受性。
图7是图解根据本公开内容另一个实施方式的显示设备300的像素的剖面图。
与图4相比，图7的连接电极BR1、BR2、BR3不延伸至保护层250的上表面。详细地说，第一连接电极BR1将驱动电源线PL与第二有源层A2连接，然而，第一连接电极BR1不延伸至保护层250的上表面。第三连接电极BR3将数据线DL与第一有源层A1连接，然而，第三连接电极BR3不延伸至保护层250的上表面。第二连接电极BR2将第二栅极电极G2与第一有源层A1连接，然而，第二连接电极BR2不延伸至保护层250的上表面。
如图7中所示，连接电极BR1、BR2、BR3可形成为允许电连接功能的最小尺寸。在这种情况下，连接电极BR1、BR2、BR3的占据面积减小，使得用作像素电极的第一电极711的占据面积增加，由此提高显示设备300的开口率。
图8是图解根据本公开内容另一个实施方式的显示设备400的像素的平面图。图9是沿图8的线III-III’截取的剖面图。
参照图8和图9，数据线DL和第一遮光层LS1形成为一体。根据本公开内容的一个实施方式，信号线DL和遮光层LS可形成为一体。
参照图8和图9，当信号线和遮光层形成为一体时，可省略设置用来将信号线和遮光层彼此连接的连接电极(见图3和图5的“BR4”)和接触孔(见图3和图5的“CH5”)。
详细地说，与图3和图5相比，在图8和图9所示的显示设备400的情况下，可省略设置用来将第一栅极电极G1和第一遮光层LS1彼此连接的第四连接电极BR4和第五接触孔CH5。根据第一遮光层LS1与数据线DL形成为一体，可防止第一遮光层LS1处于不稳定的浮置状态。
图10是根据本公开内容另一个实施方式的显示设备500的任意一个像素的电路图。图10是有机发光显示设备的像素P的等效电路图。
图10中所示的显示设备500的像素P包括作为显示器件710的有机发光二极管(OLED)、和配置成驱动显示器件710的像素驱动器PDC。显示器件710与像素驱动器PDC连接。
在像素(P)中具有配置成给像素驱动器PDC提供信号的信号线DL、GL、PL、RL、SCL。
数据电压Vdata提供至数据线DL，扫描信号SS提供至栅极线GL，用于驱动像素的驱动电压Vdd提供至驱动电源线PL，基准电压Vref提供至基准线RL，并且感测控制信号SCS提供至感测控制线SCL。
参照图10，当第(n)个像素P的栅极线被称为“GLn”时，相邻第(n-1)个像素P的栅极线为“GLn-1”，对应于第(n-1)个像素P的栅极线的“GLn-1”用作第(n)个像素P的感测控制线SCL。
例如，如图10中所示，像素驱动器PDC包括：第一薄膜晶体管TR1(开关晶体管)，第一薄膜晶体管TR1与栅极线GL和数据线DL连接；第二薄膜晶体管TR2(驱动晶体管)，第二薄膜晶体管TR2配置成根据通过第一薄膜晶体管TR1传输的数据电压Vdata控制提供至显示器件710的电流的级别；和第三薄膜晶体管TR3(基准晶体管)，第三薄膜晶体管TR3配置成感测第二薄膜晶体管TR2的特性。
第一电容器C1位于显示器件710与第二薄膜晶体管TR2的栅极电极G2之间。第一电容器C1被称为存储电容器(Cst)。
随着第一薄膜晶体管TR1通过提供至栅极线GL的扫描信号SS导通，第一薄膜晶体管TR1将提供至数据线DL的数据电压Vdata传输至第二薄膜晶体管TR2的栅极电极G2。
第三薄膜晶体管TR3与基准线RL、以及在显示器件710与第二薄膜晶体管TR2之间的第一节点n1连接。第三薄膜晶体管TR3通过感测控制信号SCS导通或截止，并且第三薄膜晶体管TR3在感测时段感测对应于驱动晶体管的第二薄膜晶体管TR2的特性。
与第二薄膜晶体管TR2的栅极电极G2连接的第二节点n2与第一薄膜晶体管TR1连接。第一电容器C1形成在第二节点n2与第一节点n1之间。
当第一薄膜晶体管TR1导通时，通过数据线DL提供的数据电压Vdata被提供至第二薄膜晶体管TR2的栅极电极G2。形成在第二薄膜晶体管TR2的源极电极S2与栅极电极G2之间的第一电容器C1被充上数据电压Vdata。
当第二薄膜晶体管TR2导通时，利用驱动像素的驱动电压Vdd，电流通过第二薄膜晶体管TR2提供至显示器件710，由此从显示器件710发光。
图11是图解根据本公开内容另一个实施方式的显示设备600应用的像素P的电路图。
图11中所示的显示设备600的像素P包括对应于显示器件710的有机发光二极管(OLED)、和配置成驱动显示器件710的像素驱动器PDC。显示器件710与像素驱动器PDC连接。
像素驱动器PDC包括薄膜晶体管TR1、TR2、TR3、TR4。
在像素P中，具有配置成给像素驱动器PDC提供驱动信号的信号线DL、EL、GL、PL、SCL、RL。
与图10的像素P相比，图11的像素P进一步包括发光控制线EL。发光控制信号EM提供至发光控制线EL。
此外，与图10的像素驱动器PDC相比，图11的像素驱动器PDC进一步包括对应于发光控制晶体管的第四薄膜晶体管TR4，第四薄膜晶体管TR4控制第二薄膜晶体管TR2的发光时间点。
参照图11，当第(n)个像素P的栅极线被称为“GLn”时，相邻第(n-1)个像素P的栅极线为“GLn-1”，对应于第(n-1)个像素P的栅极线的“GLn-1”用作第(n)个像素P的感测控制线SCL。
第一电容器C1位于显示器件710与第二薄膜晶体管TR2的栅极电极G2之间。此外，第二电容器C2位于显示器件710的一个电极与第四薄膜晶体管TR4的端子之中的被提供驱动电压Vdd的端子之间。
随着第一薄膜晶体管TR1通过提供至栅极线GL的扫描信号SS导通，第一薄膜晶体管TR1将提供至数据线DL的数据电压Vdata传输至第二薄膜晶体管TR2的栅极电极G2。
第三薄膜晶体管TR3与基准线RL、以及在显示器件710与第二薄膜晶体管TR2之间的第一节点n1连接。第三薄膜晶体管TR3通过感测控制信号SCS导通或截止，并且第三薄膜晶体管TR3在感测时段感测对应于驱动晶体管的第二薄膜晶体管TR2的特性。
第四薄膜晶体管TR4根据发光控制信号EM将驱动电压Vdd传输至第二薄膜晶体管TR2，或者阻挡驱动电压Vdd。当第四薄膜晶体管TR4导通时，电流提供至第二薄膜晶体管TR2，由此从显示器件710发光。
除了上述结构以外，根据本公开内容另一个实施方式的像素驱动器PDC还可形成为各种结构。例如，像素驱动器PDC可包括五个或更多个薄膜晶体管。
图12是根据本公开内容另一个实施方式的显示设备700的任意一个像素的电路图。图13是图解图12的像素的平面图。图14是沿图13的线IV-IV’截取的剖面图。
图12是液晶显示设备的像素P的等效电路图，液晶显示设备包括用作显示器件的液晶(LC)。图12的显示设备700对应于液晶显示设备。
参照图12、图13和图14，根据本公开内容另一个实施方式的显示设备700包括基板310、基板310上的像素驱动器PDC、和与像素驱动器PDC连接的液晶电容器Clc。在此，液晶电容器Clc对应于显示器件。如图12中所示，液晶显示设备的像素P可包括像素驱动器PDC和对应于显示器件的液晶电容器Clc。
像素驱动器PDC包括与栅极线GL和数据线DL连接的薄膜晶体管TR1c、和连接在薄膜晶体管TR1c与显示器件的第二电极372之间的存储电容器Cst。液晶电容器Clc与存储电容器Cst并联连接在薄膜晶体管TR1c与第二电极372之间。
对应于显示器件的液晶电容器Clc被充上数据信号与公共电压Vcom之间的差电压，并且通过根据充上的电压驱动液晶来控制光透射的量，数据信号通过薄膜晶体管TR1c提供至对应于像素电极的第一电极371，公共电压Vcom提供至对应于公共电极的第二电极372。存储电容器Cst稳定地保持充在液晶电容器Clc中的电压。
参照图14，根据本公开内容另一个实施方式的显示设备700包括基板310、基板310上的遮光层LS和信号线DL、遮光层LS和信号线DL上的缓冲层320、缓冲层320上的有源层A、有源层A上的栅极绝缘膜330、栅极绝缘膜330上的栅极电极G、以及栅极电极G上的像素电极(第一电极)371。
基板310可由玻璃或塑料形成。基板310可由具有柔性的塑料，例如聚酰亚胺(PI)形成。
遮光层LS和对应于信号线的数据线DL设置在基板310上。
遮光层LS防止外部提供的入射光并且保护有源层A。
根据图14中所示的实施方式，信号线可包括数据线DL。参照图14，数据线DL与遮光层LS设置在同一层。
遮光层LS由与对应于信号线的数据线DL相同的材料形成，并且遮光层LS和数据线DL可通过同一工序制造。
在图14中，遮光层LS与对应于信号线的数据线DL分隔开，然而，不限于该结构。例如，遮光层LS可与数据线DL连接。
缓冲层320设置在遮光层LS和对应于信号线的数据线DL上。缓冲层320由绝缘材料形成，并且缓冲层320保护有源层A免受外部提供的湿气或氧气影响。缓冲层320可由绝缘材料，例如氧化硅或氮化硅形成。
薄膜晶体管TR1c的有源层A设置在缓冲层320上。薄膜晶体管TR1c的有源层A的至少一些部分可与遮光层LS重叠。
根据本公开内容的一个实施方式，有源层A可包括氧化物半导体材料。例如，有源层A可包括IZO(InZnO)类氧化物半导体、IGO(InGaO)类氧化物半导体、GO(GaO)类氧化物半导体、ITO(InSnO)类氧化物半导体、IGZO(InGaZnO)类氧化物半导体、IGTO(InGaSnO)类氧化物半导体、IGZTO(InGaZnSnO)类氧化物半导体、GZTO(GaZnSnO)类氧化物半导体、GZO(GaZnO)类氧化物半导体、和ITZO(InSnZnO)类氧化物半导体之中的至少一种。然而，本公开内容的一个实施方式不限于上述材料。有源层A可由本领域人员通常已知的其他氧化物半导体材料形成。
然而，本公开内容的一个实施方式不限于上述内容。有源层A可具有多层结构。以与图6相同的方式，有源层A可包括缓冲层320上的第一氧化物半导体层和第一氧化物半导体层上的第二氧化物半导体层。第一氧化物半导体层用作配置成支撑第二氧化物半导体层的支撑层，第二氧化物半导体层用作沟道层。在这种情况下，通常，有源层A的沟道设置在第二氧化物半导体层中。
用作支撑层的第一氧化物半导体层可包括IGZO(InGaZnO)类氧化物半导体材料、IGO(InGaO)类氧化物半导体材料、IGTO(InGaSnO)类氧化物半导体材料、IGZTO(InGaZnSnO)类氧化物半导体材料、GZTO(GaZnSnO)类氧化物半导体材料、GZO(GaZnO)类氧化物半导体材料、和GO(GaO)类氧化物半导体材料之中的至少一种。第二氧化物半导体层可包括IZO(InZnO)类氧化物半导体、IGO(InGaO)类氧化物半导体、ITO(InSnO)类氧化物半导体、IGZO(InGaZnO)类氧化物半导体、IGZTO(InGaZnSnO)类氧化物半导体、GZTO(GaZnSnO)类氧化物半导体、GZO(GaZnO)类氧化物半导体、和ITZO(InSnZnO)类氧化物半导体之中的至少一种。
参照图14，栅极绝缘膜330设置在有源层A上。栅极绝缘膜330具有绝缘特性。栅极绝缘膜330可与栅极电极G一起被图案化，或者不被图案化。
根据本公开内容的一个实施方式，如图14中所示，栅极绝缘膜330可设置在包括有源层A的上表面在内的基板310的整个上表面上。在这种情况下，栅极绝缘膜330不被图案化。
栅极电极G设置在栅极绝缘膜330上。栅极电极G可以是从栅极线GL延伸的部分，或者可以是栅极线GL的一些部分。栅极电极G可包括诸如铝或铝合金之类的铝类金属、诸如银(Ag)或银合金之类的银类金属、诸如铜(Cu)或铜合金之类的铜类金属、诸如钼或钼合金之类的钼类金属、铬(Cr)、钽(Ta)、钕(Nd)和钛(Ti)之中的至少一种。栅极电极G可具有多层结构，多层结构包括具有不同物理特性的至少两层。
通过使用栅极电极G作为掩模的选择性导电化工序，有源层A的部分区域被提供导电性，因而成为导电区域。
有源层A的与栅极电极G重叠的区域未被提供导电性，因而不会成为导电区域，而是成为沟道区域31。有源层A的不与栅极电极G重叠的一些区域被提供导电性，因而成为导电区域32和33。通常，导电区域32和33相对于沟道区域31形成在两侧。
根据本公开内容的一个实施方式，可通过使用掺杂剂的掺杂工序给有源层A的一些区域提供导电性，因而成为导电区域。在这种情况下，被掺杂的区域成为导电区域。掺杂剂可穿过栅极绝缘膜330并且被掺杂到有源层A的一些区域。因而，尽管有源层A未从栅极绝缘膜330暴露到外部，但对有源层A的选择性掺杂也是可能的。根据本公开内容的一个实施方式，可不将栅极绝缘膜330图案化。
导电区域32和33中的任意一个成为源极区域32，另一个成为漏极区域33。源极区域32用作与源极电极S连接的源极连接区域，或者源极区域32本身用作源极电极S。漏极区域33用作与漏极电极D连接的漏极连接区域，或者漏极区域33本身用作漏极电极D。
为了便于说明，图14中所示的源极区域32和漏极区域33彼此区分开。然而，源极区域32和漏极区域33可互换地使用。根据电压，源极区域32可成为漏极区域33，漏极区域33可成为源极区域32。此外，源极区域32可成为源极电极S或漏极电极D，漏极区域33可成为漏极电极D或源极电极S。
为了便于说明，在图14中，源极区域32被称为源极电极S，漏极区域33被称为漏极电极D。
参照图14，钝化层340设置在栅极电极G上。钝化层340保护有源层A和栅极电极G。
根据本公开内容的另一个实施方式，在钝化层340上未设置额外的源极电极和漏极电极。因而，根据本公开内容的另一个实施方式，可省略用于形成源极电极和漏极电极的图案化工序。结果，可简化显示设备700的制造工序。
保护层350设置在钝化层340上。保护层350设置成将栅极电极G的上表面平坦化，并且保护像素驱动器PDC，由此保护层350可被称为平坦化层。
参照图14，显示器件的第二电极372设置在保护层350上。公共电压施加至第二电极372。因而，第二电极372可被称为公共电极。
层间绝缘层360设置在第二电极372上，并且显示器件Clc的第一电极371设置在层间绝缘层360上。
第一电极371和第二电极372在位置上可互换。在图12至图14所示的本公开内容的另一个实施方式中，液晶电容器Clc用作显示设备700的显示器件，并且显示器件包括对应于像素电极的第一电极371、对应于公共电极的第二电极372、和液晶层(LC)。
此外，参照图13和图14，第一电极371具有线状电极型，第二电极372具有面状电极型，但不限于这些类型。例如，第一电极371可具有面状电极型，第二电极372可具有线状电极型。以其他的方式，第一电极371和第二电极372二者可具有线状电极型，或者第一电极371和第二电极372二者可具有面状电极型。
参照图14，第一电极371经由接触孔CH2与有源层A连接。详细地说，第一电极371经由形成在层间绝缘层360、保护层350、钝化层340和栅极绝缘膜330中的接触孔CH2与有源层A直接连接。
连接电极BRL1设置在层间绝缘层360上。
连接电极BRL1由与对应于像素电极的第一电极371相同的材料形成，并且连接电极BRL1可与第一电极371设置在同一层。连接电极BRL1和第一电极371可使用同一材料通过同一工序一起制造。
连接电极BRL1将有源层A与对应于信号线的数据线DL连接。参照图14，设置接触孔CHL1，以便将数据线DL和有源层A彼此连接。
液晶层(LC)设置在第一电极371上。详细地说，液晶层(LC)设置在基板310和其对向基板410之间。
参照图14，滤色器421设置在对向基板410上，并且黑矩阵430设置在每个滤色器421之间。黑矩阵430设置成分开每个像素区域。
在图14中，滤色器421设置在对向基板410上，但不限于该结构。例如，滤色器421可设置在基板310上。
根据本公开内容的一个实施方式，薄膜晶体管TR1c由有源层A和栅极电极G形成。在薄膜晶体管TR1c中，有源层A的源极区域32成为源极电极S，漏极区域33成为漏极电极D。
在图14所示的薄膜晶体管TR1c中，有源层A设置在栅极电极G与基板310之间。如图14中所示，当基板310是底部时，其中栅极电极G设置在有源层A上方的薄膜晶体管的结构被称为顶栅结构。
与底栅结构相比，顶栅结构的薄膜晶体管具有功耗相对较小的优点。此外，在根据本公开内容另一个实施方式的薄膜晶体管的情况下，不需要用于形成源极电极和漏极电极的额外工序。因此，即使在本公开内容的另一个实施方式中采用顶栅结构，也可减少用于形成薄膜晶体管TR1c的步骤数量，还可减少沉积的层数量，由此减少接触孔的数量，从而降低制造成本并减小薄膜晶体管的占据尺寸。
根据本公开内容的另一个实施方式，即使采用顶栅结构，也可提高显示设备700的开口率。
图15是沿图13的线V-V’截取的剖面图。
参照图15，遮光层LS通过使用连接电极BRL2与栅极电极G连接。设置接触孔CHL3，以将遮光层LS与栅极电极G连接。
根据遮光层LS与栅极电极G连接，可防止遮光层LS处于不稳定的浮置状态。此外，根据遮光层LS与栅极电极G连接，其可产生当在有源层A的两侧设置栅极电极时发生的效果，由此可增加薄膜晶体管TR1c的导通电流。
图16是图解根据本公开内容另一个实施方式的显示设备800的像素的平面图。图17是沿图16的线VI-VI’截取的剖面图。
参照图16和图17，对应于像素电极的第一电极371设置在保护层350上，层间绝缘层360设置在第一电极371上，并且显示器件的第二电极372可设置在层间绝缘层360上。
下文中，将参照图18A至图18G描述制造根据本公开内容一个实施方式的显示设备100的方法
图18A至图18G是图解制造根据本公开内容一个实施方式的显示设备的方法的剖面图。
首先，参照图18A，在基板310上设置遮光层LS1、LS2和信号线DL、PL。第二遮光层LS2的一些部分可用作第一电容器的第一电容器电极C11。可使用同一材料通过同一工序一起制造遮光层LS1、LS2和信号线DL、PL。在这种情况下，可执行使用光学掩模的掩模工序。
参照图18B，在遮光层LS1、LS2和信号线DL、PL上设置缓冲层220，并且在缓冲层220上设置有源层A1、A2。有源层A1、A2包括氧化物半导体材料。执行用于形成有源层A1、A2的掩模工序。
参照图18C，在有源层A1、A2上形成栅极绝缘膜230，并且在栅极绝缘膜230上形成栅极电极G1、G2。
栅极绝缘膜230设置在包括有源层A1、A2的上表面在内的基板210的整个上表面上。栅极绝缘膜230不被图案化。
执行用于形成栅极电极G1、G2的掩模工序。
参照图18C，通过使用栅极电极G1、G2作为掩模的掺杂工序给有源层A1、A2选择性地提供导电性，因而选择性地成为导电区域。有源层A1、A2的与栅极电极G1、G2重叠的部分未被提供导电性，因而成为沟道区域31。有源层A1、A2的不与栅极电极G1、G2重叠的一些部分成为导电区域32和33。
参照图18D，在栅极电极G1、G2上形成钝化层240，并且在钝化层240上形成保护层250。在保护层250中形成接触孔CH1、CH2、CH3、CH4。接触孔CH1、CH2、CH3、CH4可穿透保护层250，并且可穿透钝化层240、栅极绝缘膜230和缓冲层220之中的至少一个。
执行用于形成接触孔CH1、CH2、CH3、CH4的掩模工序。
根据本公开内容的一个实施方式，可省略用于在钝化层240上形成源极电极和漏极电极的工序。因而，根据本公开内容的一个实施方式，可省略用于形成源极电极和漏极电极的至少一个掩模工序。结果，可更加简化制造显示设备100的工序。
参照图18E，在保护层250上形成显示器件710的第一电极711。可同时制造连接电极BR1、BR2、BR3和显示器件710的第一电极711。
连接电极BR1、BR2、BR3和第一电极711可由同一材料形成，并且可设置在同一层。可通过同一工序制造连接电极BR1、BR2、BR3和第一电极711。执行用于形成连接电极BR1、BR2、BR3和显示器件710的第一电极711的掩模工序。
可通过使用连接电极BR1、BR3将信号线DL、PL和有源层A1、A2彼此连接。
参照图18D和图18E，连接电极可形成在穿透保护层250、栅极绝缘膜230和缓冲层220的一些部分的接触孔的至少一些部分中。
更详细地说，形成穿透保护层250、钝化层240、栅极绝缘膜230和缓冲层220的每一个的一些部分的第一接触孔CH1，以暴露驱动电源线PL和第二有源层A2的至少一些部分，并且在第一接触孔CH1的至少一些部分中设置与显示器件710的第一电极711相同材料的导电膜，由此形成第一连接电极BR1，第一连接电极BR1配置成将驱动电源线PL和第二有源层A2彼此连接。
形成穿透保护层250、钝化层240、栅极绝缘膜230和缓冲层220的每一个的一些部分的第四接触孔CH4，以暴露数据线DL和第一有源层A1的至少一些部分，并且在第四接触孔CH4的至少一些部分中设置与第一电极711相同材料的导电膜，由此形成第三连接电极BR3，第三连接电极BR3配置成将数据线DL和第一有源层A1彼此连接。
第一电极711延伸到穿透保护层250、栅极绝缘膜230和缓冲层220的第二接触孔CH2的至少一部分，然后第一电极711可与遮光层LS2和有源层A2直接连接。
更详细地说，形成穿透保护层250、钝化层240、栅极绝缘膜230和缓冲层220的每一个的一部分的第二接触孔CH2，以暴露第二遮光层LS2的至少一部分和第二有源层A2的至少一部分，并且第一电极711延伸到第二接触孔CH2，由此第一电极711可与第二遮光层LS2和第二有源层A2直接连接。
参照图18F，在第一电极711的边缘上设置堤层750。执行用于形成堤层750的掩模工序。
参照图18G，在第一电极711上顺序地设置发光层712和第二电极713，由此形成显示器件710。
在根据本公开内容一个实施方式的显示设备中，遮光层和信号线设置在同一层，并且通过同一工序制造。因而，对于显示设备的制造工序来说，不必提供用于形成遮光层的额外掩模工序。
此外，根据本公开内容的一个实施方式，可通过使用由用于形成显示器件的第一电极的工序形成的连接电极将信号线和薄膜晶体管的有源层连接。因而，在显示设备的制造工序中，不必执行用于形成薄膜晶体管的源极电极和漏极电极的额外掩模工序。
因而，根据本公开内容的实施方式，可提供具有简化结构的显示设备，以及利用简化的工序制造显示设备的方法。
对于本领域技术人员来说显而易见的是，上述本公开内容不受上述实施方式和附图限制，并且在不背离本公开内容的精神或范围的情况下，可在本公开内容中进行各种替换、修改和变化。因而，本公开内容的范围由所附权利要求限定，并且从权利要求的含义、范围和等同概念得出的所有变化或修改落入本公开内容的范围内。

Claims (19)

1.一种显示设备，包括：
基板；
所述基板上的遮光层和信号线；
所述遮光层和所述信号线上的缓冲层；
所述缓冲层上的有源层；
所述有源层上的栅极绝缘膜；
所述栅极绝缘膜上的栅极电极；
所述栅极电极上的保护层；
所述保护层上的显示器件的第一电极；和
配置成将所述信号线和所述有源层彼此连接的连接电极，
其中所述遮光层和所述信号线设置在同一层，并且
所述连接电极和所述第一电极由同一材料形成。
2.根据权利要求1所述的显示设备，其中所述连接电极与所述第一电极设置在同一层。
3.根据权利要求2所述的显示设备，其中所述遮光层由与所述信号线相同的材料形成。
4.根据权利要求1所述的显示设备，其中所述信号线包括数据线和驱动电源线中至少之一。
5.根据权利要求1所述的显示设备，其中所述遮光层与所述信号线连接。
6.根据权利要求1所述的显示设备，其中所述遮光层和所述信号线形成为一体。
7.根据权利要求1所述的显示设备，其中所述栅极绝缘膜设置在包括所述有源层的上表面在内的所述基板的上表面上。
8.根据权利要求1所述的显示设备，其中所述有源层设置在所述栅极电极与所述基板之间。
9.根据权利要求1所述的显示设备，其中所述有源层包括氧化物半导体材料。
10.根据权利要求1所述的显示设备，其中所述有源层包括：
所述缓冲层上的第一氧化物半导体层；和
所述第一氧化物半导体层上的第二氧化物半导体层。
11.根据权利要求1所述的显示设备，进一步包括设置在所述第一电极上的发光层。
12.根据权利要求11所述的显示设备，进一步包括与所述第一电极连接的电容器，其中所述电容器的任意一个电极与所述遮光层形成为一体。
13.根据权利要求12所述的显示设备，其中所述第一电极与所述遮光层和所述有源层直接连接。
14.根据权利要求1所述的显示设备，进一步包括设置在所述第一电极上的液晶层。
15.根据权利要求7所述的显示设备，其中所述栅极绝缘膜设置在包括所述有源层的上表面在内的所述基板的整个上表面上。
16.一种制造显示设备的方法，包括：
在基板上形成遮光层和信号线；
在所述遮光层和所述信号线上形成缓冲层；
在所述缓冲层上形成有源层；
在所述有源层上形成栅极绝缘膜；
在所述栅极绝缘膜上形成栅极电极；
通过使用所述栅极电极作为掩模给所述有源层选择性地提供导电性，以在所述有源层中选择性地实现导电区域；
在所述栅极电极上形成保护层；
在所述保护层上形成显示器件的第一电极；和
形成连接电极，所述连接电极配置成将所述信号线和所述有源层彼此连接，
其中使用同一材料通过同一工序制造所述遮光层和所述信号线，并且
使用同一材料通过同一工序制造所述连接电极和所述第一电极。
17.根据权利要求16所述的方法，其中通过掺杂工序执行在所述有源层中选择性地实现导电区域的步骤。
18.根据权利要求16所述的方法，其中所述连接电极形成在穿透所述保护层、所述栅极绝缘膜和所述缓冲层的每一个的一些部分的接触孔的至少一些部分中。
19.根据权利要求16所述的方法，其中所述第一电极延伸到穿透所述保护层、所述栅极绝缘膜和所述缓冲层的每一个的一些部分的接触孔的至少一些部分，并且所述第一电极与所述遮光层和所述有源层直接连接。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332477A (zh) * 2014-11-14 2015-02-04 京东方科技集团股份有限公司 薄膜晶体管组件、阵列基板及其制作方法、和显示装置
US20170322471A1 (en) * 2016-05-04 2017-11-09 Samsung Display Co., Ltd. Display panel including light shielding line, display device having the same and method of manufacturing the same
CN108206010A (zh) * 2016-12-16 2018-06-26 乐金显示有限公司 薄膜晶体管基板及包括薄膜晶体管基板的显示装置
CN109887952A (zh) * 2017-12-06 2019-06-14 乐金显示有限公司 显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102349595B1 (ko) 2014-02-24 2022-01-12 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시장치
KR101920770B1 (ko) 2016-10-31 2018-11-22 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102461572B1 (ko) * 2017-12-08 2022-10-31 엘지디스플레이 주식회사 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치
CN108461529A (zh) * 2018-03-29 2018-08-28 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
KR102652572B1 (ko) * 2018-12-03 2024-03-28 엘지디스플레이 주식회사 플렉서블 전계 발광 표시장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332477A (zh) * 2014-11-14 2015-02-04 京东方科技集团股份有限公司 薄膜晶体管组件、阵列基板及其制作方法、和显示装置
US20170322471A1 (en) * 2016-05-04 2017-11-09 Samsung Display Co., Ltd. Display panel including light shielding line, display device having the same and method of manufacturing the same
CN108206010A (zh) * 2016-12-16 2018-06-26 乐金显示有限公司 薄膜晶体管基板及包括薄膜晶体管基板的显示装置
CN109887952A (zh) * 2017-12-06 2019-06-14 乐金显示有限公司 显示装置

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